UPS产品“走向哪？”

大数据发展如火如茶、4G牌照已然发放、智慧城市建设不断提速，UPS作为其中必不可少的基础设备，市场前景看起来光明一片，其产品为迎合市场需求的快速发展也在不断的发展变化之中，其未来将不断向大功率以及“绿色、节能、     

我国有线电视发展新趋势对音像资讯工作的基本要求

我国有线电视发展新趋势对音像资讯工作的基本要求王谨世界科学技术发展异常迅速，各种尖端技术有了新的突破，如微电子技术、光纤通讯技术、新型材料技术、激光技术、宇航技术，生物工程等等，逐渐形成了一场波澜壮阔的新技术革命。新型的传播媒介不断出现，如卫星电视、...     

点铜成金的VoDSL技术

在过去的两三年内，DSL业务发展十分迅速，其主要应用就是高速数据接人，如高速Internet接人和远程LAN接入等，其速率、价格等对中小型企业而言是很理想的数据解决方案。北美的DSL业务发展如表l所示。     

新概念：生活文化广场LIFESTYLE SHOPPING CENTER

LIFESTYLE SHOPPING CENTER是市场合理竞争的产物 成都一直是我国西部地区的商业中心，也是西南地区重要的商品物资集散地。从古至今，商业在成都经济发展中占有重要地位。近年来，随着城市经济和城市规划的速快发展，商业发展也逐步进入多元化阶段，成都的商业模式也一直在不断的发展和演变：从第一代的步行街区（如春熙路、红星路步行街），到第二代的百货、商场（如太平洋、王府井百货），再到第三代的区域购物中心（如百联天府、万达广场）。     

数字电视的发展：技术及经济分析和通用方程

数字电视，如高清电视、网络电视和移动电视的发展如雨后春笋般势不可挡。现在广播从业者面临着新的机遇和商业风险，投资回报是一个最主要考虑的问题。经济是科技发展的核心支持力量。本文着重从经济方面考虑，研究影响科技发展的各种因素。     

广电数据业务分析及发展策略

1广电数据业务发展分析 目前，数据通信市场的前景诱人，但有众多实力强大的竞争，如中国电信、中国移动、中国网通、中国联通，他们在数据通信市场已经耕耘多年，而且越来越多的新兴运营商也加入到这个市场中，如中国铁通、长城宽带等。在如此激烈的竞争环境下，业务的开拓与发展，是广电数据业务网络运营成功的关键。     

诚信经营塑造绿色文化

移动信息服务行业经过近几年来快速、有序的发展，移动信息内容服务如短信、手机铃声、WAP等已经成为一种文化现象，深刻影响着人们的生活。但随着这些业务发展提速，一些不健康的内容也逐渐增加，如垃圾广告短信、甚至是违法信息、扰民乃至危害社会的信息等。为此，信息产业部发出了“阳光绿色网络工程”的号召，推动绿色、健康、文明、高尚的手机文化建设。     

军用光电侦察设备发展综述

军用光电侦察设备包括激光侦察设备（如激光测距机、激光雷达和激光水下探测设备）和军用夜视设备（如微光夜视器材和红外热像仪）等。近３０年来，军用光电设备的发展令人瞩目，本文综述了其发展现状。     

网络会议：改变市场的游戏规则

一、当前的视频通信市场情况。视频通信从诞生以来，直到2003年才得到急剧发展，推动这个市场快速发展的因素有软件和价格趋势。从1995年开始在很长一段时间，视频会议的增长率在20％左右。但是由于全球经济衰退，视频会议市场也受到了一定的影响。视频会议市场呈现出上下波动的发展态势，如图1所示。另外，从收益情况看，如图2所示，视频系统的价格在不断下降。     

用串行接口为外围设备供电

功能强大的串行接口，如USB和IEEE-1394等为个人电脑的发展带来了革命性的变化。它们提供了简便的互连方式，可连接各种不同的外围设备：从比较简单的产品如无线鼠标和键盘，到便携式CD／RW播放机、无线局域网接入点、电缆和DSL调制解调器以及复杂的数字式电子消费产品，如数字相机和摄像机等。从消费者的角度看，这些工业标准接口的主     

Design issues of a low power wideband frequency doubler implementation in 0.18 μm CMOS

This paper presents design issues of a wideband, low power implementation of a frequency doubler (FD) in a commercial 0.18 μm CMOS process. The FD consists of two identical unbalanced source-coupled pairs with different width-to-length (W/L) ratios, whose inputs are connected in parallel and its output is taken single-ended. Amplitude and phase mismatch at the differential input are considered and it is shown that there is minimal effect on the output amplitude of the 2nd harmonic for a 5 dB difference in input amplitude and a 45° difference in phase. Under matched conditions, the implemented frequency doubler can be operated at a supply voltage as low as 1 V, which corresponded to a power consumption of less than 1 mW, has a 3 dB output bandwidth of 4 GHz and a conversion gain of 2.5 dB. At a supply voltage of 1.2 V, the frequency doubler consumed 1.32 mW, has a 3 dB output bandwidth of 3 GHz and a conversion gain of 5 dB. The phase niose degradation is 6 dB in both cases.     

Characterization of dark current non-uniformities in charge-coupled devices

Thermally generated dark current non-uniformities are electrically characterized, using gate controlled diodes and charge-coupled devices in the integration mode. The generation current in the space charge layer under the electrode of a gated-diode and in a CCD-cell, containing a lot of crystallographic defects, varies non-linearly with the depletion layer width. The leakage current in a charge-coupled device was measured as a function of temperature and had a smaller temperature dependence than n_i has at room temperature or lower. At higher temperatures a normal n_i-dependence is found. These experiments suggest that the enhanced generation at the location of a crystallographic defect is partly due to an increased concentration of generation-recombination centers in the vicinity of a defect and partly due to a field enhanced emission, caused by the high electric fields near the defects.     

Measuring the through-plane elastic modulus of thin polymer films in situ

Due to the ongoing increase of the transistor density on a chip, industry has replaced the silicon oxide dielectric layers, traditionally used in the back-end interconnect stack, by low-K polymer films with a thickness down to several hundred nanometers. The use of these polymer dielectric films has introduced new failure modes. To have a better understanding of these failures, knowledge of the mechanical properties is necessary. Due to surface effects, the material properties of thin films may differ in the in-plane and trough-plane direction. Most techniques available for measuring these properties are only capable of obtaining the in-plane modulus. To have an in situ measurement of the through-plane modulus, a parallel plate capacitor (PPC) under hydrostatic pressure is used in combination with an interdigitated electrode (IDE) to capture the change in dielectric constant. Since it is believed to be mechanical isotropic, a benzocyclobutene (BCB) film is used to provide a reference measurement. The through-plane elastic modulus and change in permittivity for a 1 μm thick film sandwiched by two aluminum electrodes on a silicon wafer are reported. Two circular PPCs and four IDEs were tested at a pressure of 0, 5, 7.5 and 10 MPa. An initial relative dielectric constant of the film of 2.66 ± 0.05 was obtained. This yields a change in constant equal to 1.241 × 10⁻⁴ ± 2.1 × 10⁻⁵ per MPa pressure at room temperature. The through-plane modulus showed a linear elastic behavior equal to 4.73 ± 0.46, 4.11 ± 0.39 and 3.64 ± 0.31 GPa for 20°, 50° and 75 °C, respectively. The modulus at room temperature is in good agreement with the values found in literature.     

A delay-dependent approach to robust generalized H2 filtering for uncertain continuous-time systems with interval delay

This paper is interested in the problem of robust generalized H₂ (GH₂) filtering for uncertain continuous-time systems with a delay in the state and polytopic uncertainty in system matrices. The delay is assumed to vary in an interval with a nonzero lower bound. Based on a new Lyapunov-Krasovskii functional (LKF), by virtue of free-weighting matrix method and the projection lemma, a new sufficient condition for analyzing the robust GH₂ performance of the filtering error system is first derived, and then by employing a simple linearization procedure, a new design method is proposed in terms of a set of linear matrix inequalities. Since no useful term is neglected in estimating the upper bound of the derivative of the LKF and the lower bound of the delay is included in the obtained conditions, the results in the paper are much less conservative than the open ones, which is finally illustrated by a numerical example.     

The Coverage Problem in a Wireless Sensor Network

One of the fundamental issues in sensor networks is the coverage problem, which reflects how well a sensor network is monitored or tracked by sensors. In this paper, we formulate this problem as a decision problem, whose goal is to determine whether every point in the service area of the sensor network is covered by at least k sensors, where k is a given parameter. The sensing ranges of sensors can be unit disks or non-unit disks. We present polynomial-time algorithms, in terms of the number of sensors, that can be easily translated to distributed protocols. The result is a generalization of some earlier results where only k = 1 is assumed. Applications of the result include determining insufficiently covered areas in a sensor network, enhancing fault-tolerant capability in hostile regions, and conserving energies of redundant sensors in a randomly deployed network. Our solutions can be easily translated to distributed protocols to solve the coverage problem.A preliminary version of this paper has appeared in the Workshop on Wireless Sensor Networks and Applications, 2003, San Diego, CA, USA. Chi-Fu Huang received his B.S. and M.S. degrees both in Computer Science and Information Engineering from the Feng-Chia University and the National Central University in 1999 and 2001, respectively. He obtained his Ph.D. in the Department of Computer Science and Information Engineering from the National Chiao-Tung University in September of 2004. He is currently a Research Assistant Professor at the Department of Computer Science and Information Engineering, National Chiao-Tung University, Taiwan. His research interests include wireless communication and mobile computing, especially in ad hoc and sensor networks. Yu-Chee Tseng received his B.S. and M.S. degrees in Computer Science from the National Taiwan University and the National Tsing-Hua University in 1985 and 1987, respectively. He worked for the D-LINK Inc. as an engineer in 1990. He obtained his Ph.D. in Computer and Information Science from the Ohio State University in January of 1994. He was an Associate Professor at the Chung-Hua University (1994–1996) and at the National Central University (1996–1999), and a Full Professor at the National Central University (1999–2000). Since 2000, he has been a Full Professor at the Department of Computer Science and Information Engineering, National Chiao-Tung University, Taiwan. Dr. Tseng served as a Program Chair in the Wireless Networks and Mobile Computing Workshop, 2000 and 2001, as a Vice Program Chair in the Int’l Conf. on Distributed Computing Systems (ICDCS), 2004, as a Vice Program Chair in the IEEE Int’l Conf. on Mobile Ad-hoc and Sensor Systems (MASS), 2004, as an Associate Editor for The Computer Journal, as a Guest Editor for ACM Wireless Networks special issue on “Advances in Mobile and Wireless Systems”, as a Guest Editor for IEEE Transactions on Computers special on “Wireless Internet”, as a Guest Editor for Journal of Internet Technology special issue on “Wireless Internet: Applications and Systems”, as a Guest Editor for Wireless Communications and Mobile Computing special issue on “Research in Ad Hoc Networking, Smart Sensing, and Pervasive Computing”, as an Editor for Journal of Information Science and Engineering, as a Guest Editor for Telecommunication Systems special issue on “Wireless Sensor Networks”, and as a Guest Editor for Journal of Information Science and Engineering special issue on “Mobile Computing”. He is a two-time recipient of the Outstanding Research Award, National Science Council, ROC, in 2001–2002 and 2003–2005, and a recipient of the Best Paper Award in Int’l Conf. on Parallel Processing, 2003. Several of his papers have been chosen as Selected/Distinguished Papers in international conferences. He has guided students to participate in several national programming contests and received several awards. His research interests include mobile computing, wireless communication, network security, and parallel and distributed computing. Dr. Tseng is a member of ACM and a Senior Member of IEEE.This revised version was published online in August 2005 with a corrected cover date.     

The nature of electrical interaction of Schottky contacts

Electrical interaction between metal-semiconductor contacts combined in a diode matrix with a Schottky barrier manifests itself in an appreciable variation in their surface potentials and static current-volt-characteristics. The necessary condition for appearance of electrical interaction between such contacts consists in the presence of a peripheral electric field (a halo) around them; this field propagates to a fairly large distances (<30 μm). The sufficient condition is the presence of regions where the above halos overlap. It has been shown that variation in the surface potential and the current-voltage characteristics of contacts occurs under the effect of the intrinsic electric field of the contact’s periphery and also under the effect of an electric field at matrix periphery; the latter field is formed as a result of superposition of electric fields of halos which form its contacts. The degree of the corresponding effect is governed by the distance between contacts and by the total charge of the space charge regions for all contacts of the matrix: their number, sizes (diameter D _{i, j} ), concentration of doping impurities in the semiconductor N _D , and physical nature of a metal-semiconductor system with a Schottky barrier (with the barrier height φ _b ). It is established that bringing the contacts closer leads to a relative decrease in the threshold value of the “dead” zone in the forward current-voltage characteristics, an increase in the effective height of the barrier, and an insignificant increase in the nonideality factor. An increase in the total area of contacts (a total electric charge in the space charge region) in the matrix brings about an increase in the threshold value of the “dead” zone, a relative decrease in the effective barrier height, and an insignificant increase in the ideality factor.     

Spectrophotometric characterization of organic memristive devices

Realizing element able to mimic some features of the human brain is a challenging perspective. The concept of organic devices, based on conductive polymers, is attracting significant interest being generally bio-compatible, able to work in liquid phase, with low bias voltage ranges. Organic memri-stive devices have demonstrated the capability of mimicking some properties of biological synapsis. Moreover, memristive devices based on polyaniline (PANI) have been used as artificial synapsis in the hardware of a single layer perceptron. In the perspective of a multi-layered perceptron, a fundamental step is the knowledge of the conductive state of each single memristor. The electrochromicity of PANI endows us to developed a non-invasive and precise method to solve this problem; in fact, PANI memristor's state (induced by the voltage biasing) can be monitored measuring its optical features variation by means of a spectrophotometer. The latter, thanks to its high accuracy, allows distinguishing minimal color variation at a micrometric distance and, without lowering its precision, can measure areas of 7 × 60 cm² in a single scan and reach, in several scans, a total area of 120 × 140 cm². Therefore, in future works we will extend the here proposed method in order to get, in a single scan, contact-less measurement and information about the state of each single PANI memristor belonging to a multi-layered perceptron.     

A Reconfigurable Low-Noise Amplifier Using a Tunable Active Inductor for Multistandard Receivers

A reconfigurable low-noise amplifier (LNA) based on a high-value active inductor (AI) is presented in this paper. Instead of using a passive on-chip inductor, a high-value on-chip inductor with a wide tuning range is used in this circuit and results in a decrease in the physical silicon area when compared to a passive inductor-based implementation. The LNA is a common source cascade amplifier with RC feedback. A tunable active inductor is used as the amplifier output load, and for input and output impedance matching, a source follower with an RC network is used to provide a 50 Ω impedance. The amplifier circuit has been designed in 0.18 µm CMOS process and simulated using the Cadence Spectra circuit simulator. The simulation results show a reconfigurable frequency from 0.8 to 2.5 GHz, and tuning of the frequency band is achieved by using a CMOS voltage controlled variable resistor. For a selected 1.5 GHz frequency band, simulation results show S ₂₁ (Gain) of 22 dB, S ₁₁ of ?18 dB, S ₂₂ of ?16 dB, NF of 3.02 dB, and a minimum NF (NFmin) of 1.7 dB. Power dissipation is 19.6 mW using a 1.8 V dc power supply. The total LNA physical silicon area is (200×150) µm².     

ESD protection for thin gate oxides in 65 nm

Unexpected functional failures were found in the core of an IC, processed in a 65 nm technology with 1.8 nm gate oxide, after Machine Model (MM) testing, although a comprehensive rail-based protection scheme was applied. Failure analysis was performed including Obirch, backside de-processing, and SEM analysis to locate the failure in the gate oxide of several core NMOS transistors. Careful Transmission Line Pulse (TLP) measurements on NMOSTs with 1.8 nm oxides yields a mean BVox = 6.06 V and standard deviation of 0.18 V, after correction for MM test conditions. Comparison with a mean Vt1 = 5.35 V and a standard deviation of 0.15 V for ggNMOSTs shows that the tails of the BVox and Vt1 distributions overlap. This implies that connecting a gate to a drain diffusion does not guarantee adequate protection for a 1.8 nm gate oxide in a 65 nm technology.