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1.
GaAs MMIC可靠性研究与进展   总被引:1,自引:0,他引:1  
介绍了GaAs器件及MMIC的可靠性研究现状 ,给出了GaAs器件的几种失效模式和失效机理  相似文献   

2.
电磁脉冲对GaAs LNA损伤及其分析   总被引:1,自引:0,他引:1  
介绍了电磁脉冲对GaAs低噪声放大器(LNA)损伤机理和损伤模式.利用特定电磁脉冲信号对其进行损伤,通过开帽内部目检、扫描电镜等失效手段和方法,针对该低噪声放大器在电磁脉冲实验中损伤机理及损伤模式进行了分析与讨论.实验表明,GaAs低噪声放大器的可靠性问题主要表现为有源器件、无源器件和环境因素等引入损伤退化,主要失效部位表现为有源器件,指出了对GaAs器件加固的一些措施,对器件设计者和使用者具有一定的参考意义.  相似文献   

3.
提出了一种快速评价GaAs FET可靠性寿命的新方法.利用GaAs FET失效敏感参数的温度特性和在一定电应力下的退化特性,及温度斜坡法在线快速提取器件失效敏感参数的退化量与温度的关系,从而进一步求出器件的失效激活能等相关的可靠性物理参数.  相似文献   

4.
单片微波集成电路(MMIC)是通过在共用半绝缘衬底(现用GaAs)上装配无源和有源元件制成的。今天,GaAs MMIC因其集成度高、电路功能多、频带宽度极大而进入微波通信和高频测量系统市场。GaAs MMIC遗留下来的关键问题之一是可靠性与器件性能的关系、电路的温度稳定性、互连以及引线键合、封装等等。当然,电路的有源和无源元件的可靠性一直是头等重要的。 MMIC的典型有源元件是砷化镓金属半导体场效应晶体管(GaAs MESFET)和高电子迁移率晶体管(HEMT)。对有源元件的可靠性曾通过在dc或RF偏压和高温条件下的寿命试验作过调查。共同报导的在dc偏压条件下的退化是:1)漏—源电流I_(dss)减小,2)夹断电压V_P下降,3)栅极漏电流增大。当施加RF偏压时,元件会因增益下降而有退化倾向。并伴随着噪声系数加大。此外,还发现金属栅极和接点间形成极间金属通道,结果造成元件因短路而失效。按适当规定的失效判据(通常是I_(dss)或增益变小的一定百分率),就可确定其寿命时间。失效分布假定为对数正态分布,在中等沟道温度范围(130~200℃)内已获得10~7~10~8h MT-TF。各种仪器检测方法,包括扫描光学显微镜、俄歇、能量弥散χ射线光谱学分析(EDXA)和二次离子质谱学分析,都已用来识别上述失效原因。现在可以相信,GaAs FET  相似文献   

5.
归纳了GaAs PHEMT器件的几种常见失效模式,并从6个方面分析了PHEMT器件的失效机理:热电子应力退化、氢效应、2DEG结构退化、欧姆接触退化、肖特基接触退化和电迁移.  相似文献   

6.
单片微波功率放大器的极限评估试验研究   总被引:2,自引:0,他引:2  
研究了极限评估试验技术,选用国内某款GaAs MMIC功率放大器芯片,分析了器件的详细规范、关键参数、极限判据等信息,设计了高温极限评估试验和电压应力极限评估试验的试验剖面,考察器件在热、电应力下的极限能力和失效模式,并对极限评估试验的技术手段进行了实验验证。实验结果表明,极限评估试验技术能有效评价两组试验器件的各类极限,通过试验可以获得器件的失效模式,以及器件的可靠性裕度,为改进元器件设计、材料和工艺提供依据。  相似文献   

7.
GaAs微波单片集成电路(MMIC)的可靠性研究   总被引:7,自引:0,他引:7  
黄云 《微电子技术》2003,31(1):49-52
本文介绍了GaAs MMIC的可靠性研究与进展,重点介绍了工艺表征工具(TCV)、工艺控制监测(PCM)和统计工艺控制(SPC)等实现产品高质量、高可靠性和可重复性的可靠性保障技术,为国内GaAs MMIC可靠性研究提供了新的思路。  相似文献   

8.
阐述了塑封GaAs MMIC的主要失效模式和失效机理,根据40余例实际案例,得出了其使用中的失效机理分布,并给出几例典型的失效分析案例.  相似文献   

9.
主要阐述了GaAs系高频器件及其MMIC在民品中的应用实例 ,以及GaAsMMIC的民品市场探讨。  相似文献   

10.
C波段功率GaAs MESFET的可靠性   总被引:1,自引:0,他引:1  
本文通过功率GaAs MESFET的筛选与环境、寿命试验阐述了器件的早期失效模式模型,估计了可靠性水平,指出了主要失效因素,并用实验方法讨论了突变烧毁失效,分析了失效原因,探讨了提高可靠性的途径。  相似文献   

11.
GaAs器件及MMIC的可靠性研究进展   总被引:2,自引:0,他引:2  
介绍了国外GaAs微波器件及MMIC的可靠性研究进展情况,给出GaAsMESFET、HEMT和MMIC的主要失效模式和失效机理以及在典型沟道温度下的平均寿命代表值。  相似文献   

12.
Future communications satellites are likely to use gallium arsenide (GaAs) monolithic microwave integrated-circuit (MMIC) technology in most, if not all, communications payload subsystems. Multiple- scanning beam antenna systems are expected to use GaAs MMIC's to increase functional capability, to reduce volume, weight, and cost, and to greatly improve system reliability. RF and IF matrix switch technology based on GaAs MMIC's is also being developed for these reasons. MMIC technology, including gigabit-rate GaAs digital integrated circuits, offers substantial advantages in power consumption and weight over silicon technologies for high-throughput, on-board baseband processor systems. In this paper, current developments in GaAs MMIC technology are described,and the status and prospects of the technology are assessed.  相似文献   

13.
用人体静电放电模拟器对以GaAs MESFET为主要有源器件的MMIC的静电敏感度进行研究,叙述了在MMIC设计、工艺制作等环节防静电和提高MMIC抗静电能力的措施,采用这些措施后,低噪声MMIC静电损伤阈值达到500~800 V。  相似文献   

14.
This paper reports the present status of GaAs based-heterojunction bipolar transistor (HBT) under development at Thales. We have developed a complete GaInP/GaAs-based technological process from material studies to discrete devices and microwave monolithic integrated circuits (MMIC) realisations. This know-how has been transferred recently to Thales/United monolithic semi-conductors. Discrete devices with output power over 1 W and power added efficiency (PAE) over 50% have been obtained at 10 GHz in CW. 8 W MMIC amplifiers have been fabricated using the same unit cells. The first reliability results are promising: more than 6000 h without failure for devices stressed up to 210°C and 40 kA cm−2. However, it seems that these results can still be improved. Some physical properties of the GaInP/GaAs HBT structures are suspected to have a major impact on the device reliability. The role of key parameters such as hydrogen incorporation in the GaAs base layer or residual strain in the GaInP/GaAs HBT structure has been investigated and its effects on the device characteristics identified. However, the major reliability improvement came from a novel way to passivate the extrinsic base surface. A comparison of the obtained results (device performance and reliability) with some of the best reported values in the literature (HP, TI, Daimler-Benz, etc.) is presented.  相似文献   

15.
GaAs MMIC的MIM电容Si_3N_4介质的TDDB评价   总被引:1,自引:1,他引:0  
运用TDDB理论,研究分析了G aA s MM IC的M IM氮化硅电容的导电特性和击穿特性,设计制作了三种对比分析的G aA s MM IC的M IM氮化硅电容结构,通过不同斜率的斜坡电压对氮化硅介质进行了可靠性评价,S i3N4M IM电容的可靠性与其面积和周长密切相关,介质缺陷是导致电容失效的主要因素。通过不同斜率的斜坡电压获得电场加速因子(γ)预计了10 V工作电压下的S i3N4介质层的寿命。  相似文献   

16.
The outstanding development of compound semiconductor technology led to the commercial availability of GaAs MESFETs and, more recently, of MMICs and HEMTs. The most promising applications of these devices have been found in fields where high reliability is imperative, namely the military, aerospace and telecommunications area. Although MESFET failure mechanisms have been carefully investigated, many doubts are still to be removed as far as MMIC and HEMT technologies are concerned. Moreover, the design and realization of a suitable test set-up is required to safely life-test active microwave devices, due to their potential instability both during electrical characterization and life tests with bias applied and to the high temperature at which these tests are usually carried out.  相似文献   

17.
Gallium arsenide monolithic microwave integrated circuits (GaAs MMICs) are a means of utilising the high-mobility, high-frequency aspects of the GaAs MESFET together with the semi-insulating properties of gallium arsenide to form a low-loss integrated circuit with active elements. Novel semiconductor growth structures allow devices with cut-off frequencies well into the millimetre wave ranges to be fabricated, with dramatic improvements in gain and noise figure. Multilevel structures also permit very high circuit densities, so complete receivers and phased-array radar multifunction circuits can be made with high repeatability in a few square millimetres. The authors discuss various aspects of the production process including process control and reliability. The materials used for GaAs MMICs and the fabrication technology used are discussed as are their applications. Future MMIC technology developments are also discussed  相似文献   

18.
A single-stage MMIC feedback amplifier fabricated on GaAs epitaxially grown on high-resistivity Si (6 × 103Ω.cm) will be described. The GaAs active and buffer layers were grown on 4°-off-  相似文献   

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