硅片直接键合迅速发展

硅片直接键合技术 (ＳＤＢ)就是把二片抛光硅片经表面清洁处理 ,在室温下预键合 ,再经高温键合而成为一个整体的技术。ＳＤＢ技术主要分两种 :一种是无氧化膜的硅片之间的键合 (即ＳＤＢ) ,一种是有氧化膜的硅片之间的键合 ,即用ＳＤＢ技术制作的ＳＯＩ,用ＳＯＢ/ＳＯＩ来表示。世界上有很多公司生产ＳＤＢ片和ＳＤＢ/ＳＯＩ片 ,如美国的Ｍｏｔｏｒｏｌａ、Ｈａｒｒｉｓ、ＨＰ、ＩＲ、Ｓｉｂｏｎｄ、ＩＢＭ、ＴＩ、Ｉｂｒｉｓ,日本的东芝、信越、ＮＴＴ、三菱、佳能 ,韩国的三星 ,法国的Ｓｏｉｔｅｃ等公司。法国的Ｓｏｉｔｅｃ公司年产 2 0…     

低温硅片直接键合和界面行为

描述了低温硅片直接键合（ＬＴＳＤＢ）的实现和质量评价。通过高分辨率电子显微（ＨＲＥＭ）和表面电离质谱分析（ＳＩＭＳ）的方法对键合界面特性进行了研究。用ＨＲＥＭ图象了诸如位错和ＳｉＯ２的随机分布等界面结构，ＳＩＭＳ结果表明了靠近键合界面的分布情况和Ｓｉ－Ｈ原子团的其他特性，提出了一种新的两步ＬＴＳＤＢ机理。     

低温硅片直接键合和界面行为

描述了低温硅片直接键合（ＬＴＳＤＢ）的实现和质量评价。通过高分辨率电子显微镜（ＨＲＥＭ）和表面电离质谱分析（ＳＩＭＳ）的方法对键合界面特性进行了研究。用ＨＲＥＭ图象观察了诸如位错和ＳｉＯ２的随机分布等界面结构，ＳＩＭＳ结果表明了靠近键合界面的分布情况和Ｓｉ－Ｈ原子团的其他特性。提出了一种新的两步ＬＴＳＤＢ机理     

低温SDB技术研究及硅表面吸附态的影响

研究了低温（５００℃以下）硅一硅直接键合（ＳＤＢ）技术，在低至１２０℃条件下获得了优良的键合结果，其键合强度可达到１０ＭＰａ以上．结合现有ＳＩＭＳ和ＴＤＳ测试结果，研究了硅表面吸附态对ＳＤＢ的影响，并对低温ＳＤＢ的可能机制进行了讨论．     

CF4等离子处理在低温硅片直接键合中的应用

键合前用CF4等离子体对硅片表面进行处理,经亲水处理后,完成对硅片的预键合.再在N2保护下进行40h 300℃退火,获得硅片的低温直接键合.硅片键合强度达到了体硅的强度.实验表明,CF4对硅片的处理不仅可以激活表面,而且可以对硅片表面进行有效的抛光,大大加强了预键合的效果.     

φ76mm智能剥离SOI材料的制备及其表面缺陷的分析

结合硅片低温键合和中等剂量的氢离子注入,用智能剥离技术成功地制备了φ７６ｍｍ的ＳＯＩ材料,用原子力显微镜（ＡＦＭ）测得表面粗糙度约为７ｎｍ,比普通的抛光硅片约大一个数量级。ＳＯＩ上层硅膜存在表面缺陷,包括未转移区和气泡等,这是由剥离前硅片键合界面存在的空洞引起。通过改进低温键合工艺,提高键合质量,可得到基本无宏观表面缺陷的ＳＯＩ材料。     

O76mm智能剥离SOI材料的制备及其表面缺陷的分析

结合硅片低温键合和中等剂量的氢离子注入,用智能剥离技术（Ｓｍａｒｔ－ｃｕｔ○Ｒ）成功地制备了７６ｍｍ的ＳＯＩ材料．用原子力显微镜（ＡＦＭ）测得表面粗糙度约为７ｎｍ,比普通的抛光硅片约大一个数量级．ＳＯＩ上层硅膜存在表面缺陷,包括未转移区和气泡等,这是由剥离前硅片键合界面存在的空洞引起．通过改进低温键合工艺,提高键合质量,可得到基本无宏观表面缺陷的ＳＯＩ材料．     

硅片直接键合制作SOI结构的工艺研究

硅片直接键合制作ＳＯＩ结构的工艺研究＝［刊，俄］１９９４，２３（６）．－４６～５４本文研究了硅片热压键合前化学处理原始硅表面对低温下表面半粘附键合质量和ＳＯＩ结构质量的影响。采用二次离子质谱方法分析硅片直接键合形成的ＳＯＩ结构中的杂质分布剖面表明，在...     

SDB／MCT新型功率器件的研究

本文探讨了新型功率器件ＭＣＴ（ＭＯＳ控制晶闸管）的电参数设计和工艺设计，通过计算机模拟，采用ＳＤＢ（硅片直接键合）材料，在实验室制成了ＮＭＣＴ样品。测试结果表明，在－１２Ｖ的栅偏压下能在５μｓ内关断４２Ａ／ｃｍ＾２的阳极电流。     

基于氧等离子体活化的硅硅直接键合工艺研究

基于氧等离子体活化的硅硅直接键合是一种新型的低温直接键合技术。为了优化工艺参数,得到高质量的键合硅片,选用正交试验法,研究了氧等离子体活化时间、活化功率、氧气流量三个重要的工艺参数对键合的影响,并采用键合率评估键合质量。研究结果表明,活化功率对键合率的影响最大,氧气流量次之,活化时间对结果影响最小,据此结论,在上述工艺中需重点关注活化功率和氧气流量的参数选择。     

Study of Temperature Parameter in Au–Ag Wire Bonding

The effect of the temperature on bondability and bonding process for wire bonding are investigated. Bondability is characterized by shear bonding strength and bonding process is represented by input and output power of ultrasonic transducer. A laser Doppler vibrometer and Labview software were used to record the velocity, voltage and current of transducer at different temperature settings. A K-type thermocouple sensor was used to measure the bonding temperature. Experimental results show that unsuccessful bonding happens at low temperature, and over bonding appears if the temperature is too high. Only when the temperature is at appropriate settings, can a stable and satisfied bondability be attained. The reason for this experimental observation is analyzed. By using a high resolution transmission electron microscope, the atom diffusion depth of Au-Ag bonding interface was measured and the result is about 200 nm. By using joint time-frequency analysis, the instantaneous characteristics of bonding process were observed completely and clearly. It is found that input and output ultrasonic power vs. time-frequency in a bonding process, including resonance frequency, harmonic components and amplitude of ultrasonic energy, vary along with the change of temperature settings.      

无压力辅助硅/玻璃激光局部键合

提出了一种新的无需外压力作用的硅/玻璃激光局部键合方法,通过对晶圆进行表面活化处理,选择合适的激光参数及加工环境,成功地实现了无压力辅助硅/玻璃激光键合.同时研究了该键合工艺参数如激光功率、激光扫描速度、底板材料等的影响.实验表明,激光功率越大,扫描速度越小,键合线的宽度就越大.实验结果显示,该方法能有效减少键合片的残余应力,控制键合线宽,并能得到较好的键合强度.该工艺可为MEMS器件的封装与制造提供简洁、快速、键合区可选择的新型键合方法.     

硅-硅直接键合的亲水处理及界面电特性

研究了基于亲水处理的微观机理分析和不同清洗剂亲水处理的过程及效果，提出了一种独特的三步亲水处理法。这一方法既能顺利完成室温预缝合，又能减少界面上非定形大尺寸ＳｉＯｘ体的生成，避免了界面对电输运的势垒障碍，获得了理想的键合界面。     

High-isolation bonding pad design for silicon RFIC up to 20 GHz

A simple depletion-insulation (DI) bonding pad structure is presented for silicon radio frequency integrated circuits (RFIC). Experimental results show that DI bonding pads can achieve a 3 to 7 dB improvement in cross-talk isolation compared with an ordinary bonding pad at all measured frequencies. An improvement of up to 90% in the Q-factor is also achieved by the DI pad indicating a significantly reduced high-frequency substrate loss. When compared with a ground-shield (GS) bonding pad, the isolation and the Q-factor of the DI bonding pad is inferior. However, the DI pad has a 40% smaller pad capacitance compared with the GS pad. The DI structure can be used in interconnect optimization to achieve high cross-talk isolation and low substrate loss, with minimal increase in parasitic capacitance.     

基于硼酸溶液处理的GaAs/InP低温晶片键合技术

提出了一种基于硼酸溶液的GaAs/InP低温晶片键合技术,实现了GaAs/InP基材料间简单、无毒性的高质量、低温(290℃)晶片键合。GaAs/InP键合晶片解理截面的扫描电子显微镜(SEM)图显示,键合界面整齐,没有裂缝和气泡。通过键合过程,InP上的In0.53Ga0.47As/InP多量子阱结构转移到了GaAs基底上。X射线衍射及荧光谱显示,键合后的多量子阱晶体质量未变。二次离子质谱(SIMS)和Raman光谱图显示,GaAs/InP键合晶片的中间层厚度约为17 nm,界面处B元素有较高的浓度,键合晶片的中间层很薄,因此可以得到较好的电学、光学特性。     

Localized bonding processes for assembly and packaging of polymeric MEMS

Localized bonding schemes for the assembly and packaging of polymer-based microelectromechanical systems (MEMS) devices have been successfully demonstrated. These include three bonding systems of plastics-to-silicon, plastics-to-glass, and plastics-to-plastics combinations based on two bonding processes of localized resistive heating: 1) built-in resistive heaters and 2) reusable resistive heaters. In the prototype demonstrations, aluminum thin films are deposited and patterned as resistive heaters and plastic materials are locally melted and solidified for bonding. A typical contact pressure of 0.4 MPa is applied to assure intimate contact of the two bonding substrates and the localized bonding process is completed within less than 0.25 s of heating. It is estimated that the local temperature at the bonding interface can reach above 150/spl deg/C while the substrate temperature away from the heaters can be controlled to be under 40/spl deg/C during the bonding process. The approach of localized heating for bonding of plastic materials while maintaining low temperature globally enables direct sealing of polymer-based MEMS without dispensing additional adhesives or damaging preexisting, temperature-sensitive substances. Furthermore, water encapsulation by plastics-to-plastics bonding is successfully performed to demonstrate the capability of low temperature processing. As such, this technique can be applied broadly in plastic assembly, packaging, and liquid encapsulation for microsystems, including microfluidic devices.     

Polymer-Protected Cu-Ag Mixed NPs for Low-Temperature Bonding Application

A simple method has been proposed to prepare polymer-protected Cu-Ag mixed nanoparticles (NPs), which are suitable for use as low-temperature bonding materials. The polymer coated on the Cu-Ag mixed NPs can protect them from oxidation effectively when heated in air at temperature lower than 280°C. The low-temperature bonding process utilizing Cu-Ag mixed NPs as the bonding material is investigated. The bonding experiments show that robust joints are formed using Cu-Ag mixed NPs at 160°C in air. The shear test shows that addition of copper to silver is helpful for improving joint strength. This novel sintering-bonding technology using Cu-Ag mixed NPs as an interconnection material has potential for application in the electronics packaging industry.     

硅片直接键合界面的存在对器件性能的影响

利用电子透射显微镜(TEM)和俄歇分析仪(AES)观察硅片直接键合界面结构,在界面存在一个小于2nm厚的非晶区-硅氧化物。此界面具有良好的吸杂效应,在同一退火温度下,退火时间愈长,吸杂现象愈明显。因此键合界面的存在改善了晶体管的性能。     

用于高亮LED的Si键合研究

在Si和外延层之间使用一层薄金属层作为高效反射镜的所谓"镜面衬底",不但有助于提高芯片的出光效率,同时把键合温度降低到300℃以下。利用Au/In合金的方法,来实现用于高亮LED的Si片与AlGaInP四元外延片的键合。实验表明,在温度为250℃时,利用Au/In作为焊料,Si片与AlGaInP四元外延片可以实现比较好的键合,键合面可以达到60%。通过研磨减薄、X-ray测试和扫描电镜(SEM)测试得出键合面的界面特性,通过能谱分析得出键合面的物质分别为AuIn2和AuIn,实验测试得出此时Au的原子数占33.31%,In的原子数占36.64%。     

导电胶粘接可伐载板工艺的仿真与优化

导电胶是一种很有潜力的互连材料,其粘接可靠性是制约其应用的主要因素。基于对某混频模块粘接失效的分析,探索温度试验条件及载板尺寸对可伐载板粘接可靠性的影响。通过仿真和试验设计,研究不同温度试验条件下不同尺寸载板在粘接界面处的应力分布情况,并优化了可伐载板粘接工艺。结果表明,温度试验条件越严苛,载板尺寸越大,可伐载板粘接可靠性越差,可采取环氧绝缘胶加固或柔性导电胶粘接的方式对其粘接工艺进行优化。