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1.
《红外与毫米波学报》2015,(4)
报道了一种基于InGaAs/InP雪崩光电二极管、1.25GHz正弦波门控及贝塞尔低通滤波器的1.25GHz高速短波红外单光子探测器.通过调整比较电路的鉴别电平,实验研究了单光子探测器雪崩信号幅度随反向直流偏压的变化.随着鉴别电平的提高,单光子探测器的探测效率及暗计数率均呈指数衰减,而后脉冲概率先增大到一个峰值,然后减小.研究表明,为获得更高的性能,需要尽量降低单光子探测器的鉴别电平. 相似文献
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用于高速量子密码系统的1.25 GHz InGaAs/InP单光子探测器的研制 总被引:1,自引:0,他引:1
随着量子密码领域的快速发展,近红外单光子探测器的研究已经成为该领域的研究重点和技术制高点。报道了一种基于正弦门控与滤波技术的InGaAs/InP雪崩光电二极管(APD)高速单光子探测器,门控频率达到1.25GHz。在探测效率为10.3%时,暗计数概率为1.3×10-6/gate,后脉冲概率为5.6×10-5/ns。这种高速单光子探测器将大幅度提升量子密码系统的两个关键指标——密钥率和传输距离,为下一代高速量子密码系统的实用化应用奠定了基础。 相似文献
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雪崩光电二极管(APD)是一种高灵敏度光电器件。按照工作电压的不同可分为线性APD和盖革APD。其中,盖革APD的工作电压高于击穿电压,利用半导体材料内部载流子的高雪崩增益可实现单光子级信号探测,也被称为单光子雪崩光电二极管(SPAD)。InGaAs材料SPAD在0.9~1.7 μm光谱范围内有高量子效率,是1.06、1.55 μm主动激光探测的理想探测器。通过将高效率InGaAs SPAD阵列芯片与CMOS计时/计数读出电路芯片集成封装,制备的雪崩焦平面探测器可对光子信号进行时间量化,在三维激光雷达、远距离激光通信、稀疏光子探测等领域有广泛应用。介绍了InGaAs单光子雪崩焦平面的器件结构及基本原理,在此基础上回顾了国内外雪崩焦平面技术的研究进展,并对未来发展方向进行了展望。 相似文献
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分析了一种工作波长为1550 nm,利用铌酸锂周期极化波导和硅雪崩二极管构成的升频单光子探测器的性能,给出了应用这种探测器的理想通信系统的结构组成,讨论了升频单光子探测器主要参数:量子效率和暗记数及其与泵浦功率的关系.通过比较得出升频探测器优于传统的InGaAs/InP雪崩二极管单光子探测器,能很好地改善量子通信系统的性能. 相似文献
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对InGaAsP/InP单光子雪崩探测器(SPADs)进行了总剂量为10 krad(Si)和20 krad(Si)的γ辐照,并进行了原位和移位测试。辐照后,暗电流和暗计数率有轻微的下降,而探测效率和后脉冲概率基本不变。经过一定时间的室温退火后,这些退化基本恢复,这表明瞬态电离损伤在γ辐照对InGaAsP/InP单光子雪崩探测器的损伤中占主导地位。 相似文献
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Okazaki H. Nakagawa T. Muraguchi M. Fukuyama H. Maezawa K. Yamamoto M. 《Very Large Scale Integration (VLSI) Systems, IEEE Transactions on》1998,6(1):39-42
A novel sampling phase detector (SPD) using a resonant-tunneling high electron mobility transistor (RTHEMT), which features strong nonlinear characteristics, is proposed and demonstrated as a means of achieving a simple, low-power-consumption SPD. We confirmed promising performance for an RTHEMT as a simple pulse generator in an SPD with low power consumption, even for a low reference-signal input level. An 11-GHz phase-locked oscillator is constructed along with the present SPD, and successfully phase-locked signals are obtained with it. These results clearly show the potential of constructing high-performance analog RF circuits based on RTHEMTs 相似文献
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A new 94-GHz six-port collision-avoidance radar sensor 总被引:2,自引:0,他引:2
Moldovan E. Tatu S.-O. Gaman T. Ke Wu Bosisio R.G. 《Microwave Theory and Techniques》2004,52(3):751-759
A new 94-GHz collision avoidance radar sensor is proposed. The receiver front-end module is based on a six-port phase/frequency discriminator (SPD). The SPD, composed of four 90/spl deg/ hybrid couplers, is manufactured in a metal block of brass using a computer numerically controlled milling machine. Simulation and measurement S-parameters of the SPD are presented in the frequency band. New SPD computer models are generated and used in the system simulations. Preliminary measurements and system simulations performed to obtain the relative velocity of the target and its distance are presented. Statistical evaluations show an acceptable measurement error of this radar sensor. 相似文献
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External Synchronization of 160-GHz Optical Beat Signal by Optical Phase-Locked Loop Technique 总被引:1,自引:0,他引:1
We have synchronized a 160-GHz optical beat signal with a 40-GHz reference optical pulse train by using an optical phase-locked loop (OPLL). The OPLL consists of an optical beat signal source, comprising a pair of three-electrode distributed feedback laser diodes that works as a voltage controlled oscillator, and an all-optical phase detector based on the two-photon absorption in a silicon avalanche photodiode. Phase-locking operation is confirmed through phase-error measurement and cross-correlation trace measurement. The residual timing jitter of the 160-GHz optical beat signal relative to the reference pulse train, in the bandwidth of 80 MHz, is measured to be as small as 126 fs 相似文献
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《Solid-State Circuits, IEEE Journal of》1968,3(3):231-233
Some experimental results with an IMPATT diode operating in the 50-GHz region are presented, including 200-megabit- pulsed avalanche oscillation, injection locking, frequency spectra of the free running oscillation and the locked oscillation, and the noise spectra around the avalanche oscillation. 相似文献
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A 35-GHz solid-state injection-locked oscillator giving 38 W peak power with 30% duty cycle is described. The power source utilizes a total of ten GaAs IMPATT (impact avalanche and transit time) diodes grouped in two stages. The performance of the source as well as the systematic design and measurement procedures used to develop the multidiode cavities used are discussed 相似文献
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Power level and phase difference of two linearly polarized, wanted and unwanted, 30-GHz signals transmitted by ATS-6 during its European campaign are measured. The analysis of a cross-polar discrimination (XPD) event reveals the possibility of improving XPD by a simple rotation of the feed systmn. The procedure applied could be self-adaptive where the phase difference between both components could serve as the variable criterion. 相似文献
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《Photonics Technology Letters, IEEE》2009,21(7):462-464
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《Proceedings of the IEEE. Institute of Electrical and Electronics Engineers》1967,55(12):2165-2165
Transmission-type amplifiers in the 50-GHz band were constructed with Ge silver-bonded varactor diodes biased in the avalanche condition. A transmission gain of 4 to 6 dB was stably obtained. The bandwidth was about 230 MHz. 相似文献
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《Electron Devices, IEEE Transactions on》1971,18(3):141-146
Metal-semiconductor contact injection on the junction side of diffused-mesa avalanche diodes has been found to have a significant effect on the performance of these diodes as oscillators. A minority carrier injection ratio of 6 percent reduces the efficiency of what would be 9 percent efficient diodes to less than 1 percent and increases the FM noise by a factor of 2 as tested in a 6-GHz oscillator circuit. The dependence of the minority carrier injection ratio of the metal-semiconductor barrier upon current density has been measured and quantitatively modeled. Calculated values of diode admittance, including the effects of injection at the contact, are shown to be in agreement with measured values of both small-signal diode admittance versus frequency and large-signal diode admittance versus RF voltage. Germanium avalanche diodes with low-minority carrier injection contacts have demonstrated CW oscillation efficiencies greater than 9 percent at 6 GHz. The realization of low-injection contacts is shown to be a requirement for achievement of high-efficiency avalanche oscillation. 相似文献
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The low-frequency open circuit noise spectral density S(f) of an ion-implanted 60-GHz double-drift-region IMPATT diode was measured as a function of the dc avalanche current I0 . Over an intermediate current range the noise follows an S(f)=a2VB0 2/I0 relationship where VB0 is the reverse breakdown voltage and a2≃4.5 × 10-20A/Hz. 相似文献