Numerical Simulation of the Base Impedance of Long Wire Whisker Antennas

With increasing frequencies the whisker structures used to contact honeycomb Schottky diodes remain no longer thin compared to wavelength. Whereas the finite thickness and the detailed tip shape do not influence the antenna pattern very much the antenna base impedance depends on these parameters to a great extent. A good impedance matching between Schottky diode and whisker antenna is necessary to optimise mixer or detector performance and can only be achieved if the antenna impedance is known. Antenna base impedances have been simulated numerically and checked by means of scaled model measurements for several whisker shapes. The influence of further parts of the antenna environment, as for example reflectors, has also been investigated. Simulation results have been discussed and compared to theory. Simulation has been found out to be a reliable tool for the determination of base impedances of almost arbitrarily shaped whisker antennas.     

WIDE RANGE DETECTOR USING PARABOLIC CYLINDRICAL MIRROR FOR THz APPLICATIONS

A new, wide-band, high-speed and high-sensitivity THz detector has been developed. The prototype detector consists of a parabolic cylindrical mirror, a long wire antenna and a Schottky barrier diode. Direct detection measurements have shown a stable sensitivity of 150 ± 50 V/W for 1–2 THz without any adjustments. The long wire antenna was fixed at the focus of parabolic cylindrical mirror then it has been realized less operation steps, easy coupling to the external THz signals and a dramatic enhancement in the practicality of this system. The optically polished mirror and frosted surface one showed comparable sensitivities, thus easy polishing and less cost mirror fabrication can be applied for this system. The radiation pattern showed a maximum radiation angle of approximately 23° with its dominant main lobe, which was attributed to the wire antenna character and confirmed good agreements with classical antenna theory.     

Tunnel diode integrated rectangular patch antenna for millimetre range

Theoretical investigations conducted for the Ge tunnel diode integrated rectangular patch antenna reveals that such an antenna exhibits frequency tunability with bias voltage. The Ge tunnel diode loaded patch can be operated in the millimetre range (53.517–56.4615GHz). The range of frequency obtainable for operation is 2944.5MHz. The radiation pattern shows variation with the bias voltage, and radiated power beamwidth and directivity vary inversely with bias voltage. Thus, the Ge tunnel diode loaded patch can be used to achieve electronic tuning (BW = 5.355%) with the bias voltage.     

Fast Microwave Detectors Based on the Interaction of Holes with Phonons

Experimental results and a proposed model are discussed in this paper on a new microwave detector which has subnanosecond response times and a pulsed power measuring capability between 0.5 W and >10 kW for a frequency band larger than 0-50 GHz. Our model suggests that electromagnetic energy is absorbed by holes in p-type germanium (Ge). This absorption increases the mobile hole temperature above the lattice temperature. The absorbed energy is determined by measuring the change in average mobility of the holes in the nonequilbrium state. We experimentally observed greater than > 50-V output pulses for kilowatt microwave input pulses to the detector and a bias current of 1 A. The detector exhibited a linear response between 0.5 W and 1 kW. We propose that the voltage pulses in the p-type Ge detector are caused by nonequilibrium holes exchanging energy with the phonons in the crystal lattice. This energy exchange modulates the hole mobility.     

一种高集成高空间分辨率220 GHz检波器

本文设计了一种高集成检波器,其包含贴片天线、匹配电路、肖特基二极管和透镜。在中芯国际130nm工艺下将天线、匹配电路、肖特基二极管集成到一个芯片上,检波器的集成度相比于分离式有了明显的提高。为增强片上天线的方向性,进行了带有空气腔的尼龙透镜的设计和优化。透镜上的空气腔不但提供了组装空间而且减小了透镜体积。通过测试,天线在220 GHz辐射增益为22 dB,其中透镜贡献约为20dB。检波器测试得到的响应率可达到130-150V/W,对应的等效噪声功率（NEP）估算为400-460 。     

Millimeter-wave double-dipole antennas for high-gain integratedreflector illumination

A double-dipole antenna backed by a ground plane has been fabricated for submillimeter wavelengths. The double-dipole antenna is integrated on a thin dielectric membrane with a planar detector at its center. Measured feed patterns at 246 GHz agree well with theory and demonstrate a rotationally symmetric pattern with high coupling efficiency to Gaussian beams. The input impedance is around 50 Ω and will match well to a Schottky diode or SIS detector. The double-dipole antenna served as the feed for a small machined parabolic reflector. The integrated reflector had a measured gain of 37 dB at 119 μm. This makes the double-dipole antenna ideally suited as a feed for high-resolution tracking or for long-focal-length Cassegrain antenna systems     

Resonant tunnelling structures with very thin contact layers using nonalloyed Ge/Pd contacts

A resonant tunnelling diode with a 10 nm top contact layer has been fabricated using a nonalloyed Ge/Pd ohmic contact. Resonant tunnelling behaviour is still observed. This metallisation scheme is useful for device applications where ohmic contacts to very thin layers are required.<>     

Low frequency characteristics of a quasioptical Schottky diode detector part II: Experimental results

A detailed experimental study of the low frequency (video) response of a quasioptical Schottky diode detector over the microwave and FIR wavelength range is presented. An optimization of the responsivity versus the bias current is proposed and a generalized curve of the saturation power versus the FIR wavelength is given. This curve defines for any antenna point-contact Schottky diode detector, suitable for FIR detection, the power range for a linear detector response. A simple method is also described to calculate the coupling efficiency of the laser radiation into the antenna reception pattern.     

Novel optical FSK heterodyne single filter detection system using a directly modulated DFB-laser diode

A novel optical FSK heterodyne single filter detection system, which can use direct modulation and can tolerate the relatively large spectral width of a laser diode, is proposed. The receiver sensitivity improvement, as much as 8 dB over direct detection using a Ge APD, has been achieved after 105 km transmission at 100 Mbit/s.     

Nb/GaAs super-Schottky diode

A super-Schottky contact diode made of Nb on heavily doped p-GaAs has been fabricated by electron-beam deposition under high vacuum, resulting in a rugged device having very reliable characteristics with detector current sensitivity S ≃ 1500 V^-1and estimated NEP ≃ 1.2 × 10^-15W/√HZ at 4.2 K under the optimum bias conditions.     

（英）一种基于透镜天线的宽带太赫兹准光检波器

设计了一种能够工作在140~325 GHz频带的宽带准光检波器,由一颗高阻硅透镜和单片集成检波芯片组成.设计并加工出双缝天线,在天线馈电端集成了肖特基二极管,该紧凑结构使其能够接收空间中的太赫兹辐射并转换为基带信号.为增强片上天线的方向性,利用MLFMM算法进行了扩展半球硅透镜的设计和优化,实现了良好的辐射特性.通过测试,天线在220 GHz和324 GHz处的辐射增益分别为26 dB和28 dB.在140~325 GHz,检波器测试得到的响应率可达到1 000~4 000 V/W,对应的等效噪声功率(NEP)估算为0.68~273 pW/Hz.     

Tunnel diode-loaded rectangular microstrip antenna for millimeter range

Theoretical investigations conducted for Ge tunnel diode-integrated rectangular patch antenna reveals that such an antenna exhibits frequency tunability with the bias voltage. The Ge tunnel diode-loaded patch can be operated in the millimeter range (51.042-54.013 GHz). The range of frequency obtainable for operation is 2971 MHz. The radiation pattern shows variation with the bias voltage and the radiated power, the beamwidth and the directivity vary inversely with the bias voltage. Thus, the Ge tunnel diode-loaded patch can be used to achieve electronic tuning (BW=5.66%) with the bias voltage.     

Zero bias resonant tunnel Schottky contact diode for wide-band direct detection

A Schottky-collector resonant tunnel diode detector has been fabricated and characterized at zero bias up to 400 GHz. General device structure and fabrication are discussed, and small-signal equivalent models are presented for different diode areas. Over the measured range of 200 to 400 GHz using a monolithic antenna structure, noise equivalent power values between 3-8 pW/Hz/sup 1/2/ are achieved. The current-voltage characteristics of the diode show weak temperature dependence over a measured range of 213-323 K.     

Optimum coupling of a Gaussian beam to a corner reflector with a four-wavelength antenna

The coupling of a Gaussian radiation beam to a corner reflector with a four-wavelength long wire antenna was studied theoretically and experimentally. The antenna configuration in conjunction with a Schottky barrier diode is recently used widely as a fast submillimeter wave detector. The optimum angle focusing the radiation to the antenna has been obtained and is 11° (half-width at the 8.7dB points).     

A Novel Single-Feed Circular Microstrip Antenna With Reconfigurable Polarization Capability

A single-feed circular microstrip antenna with reconfigurable polarization capability is proposed. This antenna has a simple structure, which consists of a radiating circular patch, five switches (PIN diode), three matching stubs, and a 50 microstrip feed line. It can be switched between 4 different states: two states (low-frequency and high-frequency) for linear polarization (LP), one state for left hand circular polarization (LHCP) and one for right hand circular polarization (RHCP) by controlling the bias voltage of two PIN diodes. At the same time, three switchable matching stubs are used for matching every polarization state. Simulation results and experimental results show that the proposed antenna demonstrates a low cross polarization level, good impedance bandwidth, and a very good axial ratio in the circularly polarized states.     

Modeling of the Substrate Influence on Multielement THz Detector Operation

The development of THz multielement uncooled imagers based on focal plane arrays (FPAs) requires an optimization of the system parameters to achieve a homogeneous sensitivity of the array elements. Results of numerical simulation of the eight-element linear array of planar antennas with detecting elements, on a substrate of finite dimensions are presented. We establish how the substrate thickness h and the relative permittivity ε _r influence antenna pattern and antenna-detector matching for each element. We show that the antenna pattern depends on the detector position more than the antenna – detector impedance matching. The gain of array elements, the antenna-detector matching, and the homogeneity of the detector sensitivity can be simultaneously optimized by the proper choice of the substrate thickness h and the relative permittivity ε _r . We show that multielement systems with large substrate thickness and high relative permittivity are not suitable for the imaging system implementation. To achieve uniform multielement system sensitivity, substrates with low permittivity (ε _r <5) and/or low thickness (h< 60 μm for the Si substrate) should be used. Finally, we investigate the operation of the detector array with optimally chosen substrate parameters together with the focusing lens, and show that the system is able to work as FPA without significant image corruption.     

Gain and bandwidth of fast near-infrared photodetectors: A comparison of diodes, phototransistors, and photoconductive devices

Different materials and different types of detectors are used for optical data communication in the wavelength range oflambda sim 0.8µmlambda sim 1.7µm. In this paper the behavior of p-n diodes, Mn and Mp Schottky diodes is evaluated as well as that of bipolar transistors, n-p-n and p-n-p, and of photoconductive detectors using n-type or p-type material. The different behavior of lateral and coaxial versions is shown taking into account contact and surface recombination. The gain, the bandwidth, the gain bandwidth product, and the rise time of all these types of fast detectors are given in terms of material and technological data, including the discussion of the different rise and fall times of some detector versions. Finally, a theoretical comparison is made between the detectors showing their different behavior and ultimate performance limit. For practical GaAs planar devices as a photoconductive detector, a p-n diode, a heterojunction n-p-n and a lateral n-p-n transistor, a Mn Schottky diode, and a totally depleted MnM structure (symmetrical Mott barrier) experimental data are given. They verify the theoretical prediction that with all types of detectors rise times of <100 ps can be achieved.     

The design and performance of a 2.5-GHz telecommand link forwireless biomedical monitoring

This paper details the implementation and operational performance of a minimum-power 2.45-GHz pulse receiver and a companion on-off keyed transmitter for use in a semi-active, duplex RF biomedical transponder. A 50-Ω microstrip stub-matched zero-bias diode detector forms the heart of a body-worn receiver that has a CMOS baseband amplifier consuming 20 μA from +3 V and achieves a tangential sensitivity of -53 dBm. The base transmitter generates 0.5 W of peak RF output power into 50 Ω. Both linear and right-hand circularly polarized Tx-Rx antenna sets were employed in system reliability trials carried out in a hospital coronary care unit. For transmitting antenna heights between 0.3 and 2.2 m above floor level, transponder interrogations were 95% reliable within the 67-m² area of the ward, falling to an average of 46% in the surrounding rooms and corridors. Overall, the circular antenna set gave the higher reliability and lower propagation power decay index     

Long-Range Lateral Dopant Diffusion in Tungsten Silicide Layers

Novel diode test structures have been manufactured to characterize long-range dopant diffusion in tungsten silicide layers. A tungsten silicide to p-type silicon contact has been characterized as a Schottky barrier rectifying contact with a silicide work function of 4.8 eV. Long-range diffusion of boron for an anneal at 900 $^circ$ C for 30 min has been shown to alter this contact to become ohmic. Long-range diffusion of phosphorus with a similar anneal alters the contact to become a bipolar n-p diode. Bipolar diode action is demonstrated experimentally for anneal schedules of 30 min at 900 $^circ$ C, indicating long-range diffusion of phosphorus ( ${sim} {hbox{38}} mu$m). SIMS analysis shows dopant redistribution is adversely affected by segregation to the silicide/oxide interface. The concept of conduit diffusion has been demonstrated experimentally for application in advanced bipolar transistor technology.      

Detection and Mixing Properties of an InSb Metal-Semiconductor Point Contact Diode

We present preliminary data on the performance of a new fast photodetector based on a W–InSb metal-insulator-semiconductor point contact diode operating at room temperature and with no bias voltage. The device can work either as a video detector or as harmonic mixer for radiation from far–infrared (FIR) to visible. In the FIR region, for wavelengths from 200 to 400 μm, the W–InSb point contact diode showed a sensitivity comparable to that of Golay cells. In the visible region the device showed a video and heterodyne detection responsivity much higher with respect to standard M.I.M. point contact diodes. Owing to its ruggedness, low cost and wide band of operation, the W–InSb point contact diode may be very attractive as a general purpose optical sensor.