MSTP技术的新应用

介绍MSTP技术的特点及优势，并通过分析MSTP在大客户、NGN以及5G等业务的承载方式和作用，总结出MSTP的技术优势，进而对今后MSTP的发展方向进行了预测。     

MSTP技术推动城域网优化建设

基于SDH发展而来的MSTP技术在提供传统语音业务的同时,能可靠、有效地承载各种数据业务,可以构建多业务、可扩展的高可靠城域传输统一平台.本文简要介绍MSTP技术的特点和优势,在研究MSTP技术发展的基础上,主要探讨MSTP技术在城域网优化建设中的应用.     

MSTP技术在大客户专线组网中的应用

MSTP技术一直在持续发展,吸取和结合其他技术(如MPLS、RPR等),使MSTP的内涵不断得以扩展,能适应市场需求的变化。因此为满足大客户专线接入业务的需求,引入MSTP技术是一个比较好的选择。本文阐述了MSTP的技术特点,组网优势以及在大客户专线接入业务中的解决方案。     

MSTP技术在大客户专线接入组网中的应用

MSTP技术一直在持续发展,吸取和结合其他技术(如MPLS、RPR等),使MSTP的内涵不断得以扩展,能适应市场需求的变化.因此为满足大客户专线接入业务的需求,引入MSTP技术是一个比较好的选择.本文阐述了MSTP的技术特点,组网优势以及在大客户专线接入业务中的解决方案.     

MSTP技术在大客户专线组网中的应用简

MSTP技术一直在持续发展，吸取和结合其他技术（如MPLS、RPR等），使MSTP的内涵不断得以扩展，能适应市场需求的变化。因此为满足大客户专线接入业务的需求，引入MSTP技术是一个比较好的选择。本文阐述了MSTP的技术牦最，组网优势以及在大客户专线接入业务中的解决方案。     

MSTP技术在大客户专线接入中的应用

对大客户专线接入的种类、业务流向、实现技术等进行分析,结合MSTP技术的特点及主要技术优势提出合适的应用范围,并对MSTP的实际组网应用进行了举例。     

广电网络中心MSTP城域网设计要点分析

在这个广播电视网络信息快速革新的时代,MSTP技术之所以在城域网中得到运用,原因在于它是目前最适合城域网的网络技术。MSTP技术对于传统的本地网来说,具有很大的优势,可以说它是各种网络的综合和进化,MSTP技术的出现给城域网带来极大的便利,更加适用于城域网业务的传输运行。MSTP技术支持多种宽带业务,它在城域网中发挥着关键性作用。     

内嵌MPLS的MSTP技术实现及优势分析

2004年以来,多协议标签交换(MPLS)技术在多业务传送平台(MSTP)中的应用受到越来越多的关注,目前已经形成热潮。本文着重分析了MPLS内嵌MSTP的技术实现和技术优势。     

内嵌RPR技术分析及应用

弹性分组环(RPR)是一种在环形结构上优化数据业务传送的新型MAC层协议,为优化环网上数据包的传输而提出.基于MSTP的RPR实现方案实际上是在MSTP环网宽带中划分出独立的通道米支持RPR技术.内嵌RPR的MSTP技术与传统MSTP技术相比,提高了带宽利用率.在组建城域网以及3G传输网中,内嵌RPR技术都将发挥出极人的优势.     

MSTP在光纤接入网中的优势

介绍了光纤接入网的基本组成,FTTH(光纤到户)市场现状,SDH技术的特点和基于SDH的MSTP(多业务传送平台)的功能和优势,说明MSTP是适合新一代光纤接入网发展的核心技术.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Call for Papers

正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its