中继网络中不准确信道状态信息下抗多窃听者的物理层安全方案

该文研究存在多个相互勾结的单天线窃听者的多中继传输系统中,采用零空间人工噪声和放大转发的中继波束赋形的物理层安全传输方案。在中继窃听端的信道状态信息不准确的情况下,基于半定规划理论,对中继的波束赋形加权矩阵和人工噪声协方差矩阵进行联合优化,有效减少相互勾结的多个窃听者所获得的信息量,显著提高系统保密容量,是一种具有良好鲁棒性的物理层安全传输方案。仿真结果显示方案具有良好的性能。     

有限字符输入下AF中继系统安全互信息量分析及功率控制策略

本文针对有限字符输入下多中继通信系统,推导了源和中继节点总功率受限条件下的安全互信息量。在已知理想信道状态信息的条件下,给出了一种基于对窃听节点迫零的波束赋形方案,并设计了一种提高安全互信息量的功率控制策略。针对所提功率控制策略,研究了该策略下目的节点和窃听节点的平均误符号率性能,分析表明该策略在高信噪比下存在误码平层。针对误码平层缺陷,本文提出了一种高信噪比下适当增大源节点发射功率的改进方案。改进方案虽然损失了部分安全互信息量,但换来误符号率的明显改善,消除了功率控制方案的误码平层问题。      

全双工主动窃听非正交多址接入系统智能超表面辅助物理层安全传输技术

针对全双工被动窃听和主动干扰攻击下的多用户非正交多址接入(NOMA)系统,该文提出一种智能超表面(RIS)辅助的鲁棒波束赋形方案以实现物理层安全通信。考虑在仅已知窃听者统计信道状态信息的条件下,以系统传输中断概率和保密中断概率作为约束,通过联合优化基站发射波束赋形、RIS相移矩阵、传输速率和冗余速率,来最大化系统的保密速率。为解决上述多变量耦合非凸优化问题,提出一种有效的交替优化算法得到联合优化问题的次优解。仿真结果表明,所提方案可实现较高的保密速率,且通过增加RIS反射单元数,系统保密性能更佳。     

物理层安全中的最优中继选择及协同干扰策略

本文提出了一种以协同干扰为基础,结合了最优中继选择和功率分配的物理层安全方案.该方案针对分布式天线的场景,从中间节点中选择一个最佳的节点作为中继,剩余的其他节点作为协同干扰节点.中继节点使用放大转发策略.本文同时提出了协同干扰节点的波束成形算法.另外,我们还推导出了中继节点和协同干扰节点之间的功率分配的闭式解.最后,本文还给出了相关的仿真结果,证实了新提出的方案比传统方案能获得更高的安全容量.     

利用人工噪声提高合法接收者性能的物理层安全方案

该文研究在采用波束赋形和人工噪声的物理层安全方案中利用人工噪声提高合法接收端性能。发送端根据发送符号和信道系数,判断人工噪声是否对合法接收端的信号检测有益,并针对有益噪声和无益噪声分别设计不同的噪声波束赋形矢量。通过利用有益噪声,在不改变窃听端接收信噪比的条件下,合法接收端的信噪比有较明显的提高。对误比特率和保密容量进行理论分析和仿真,结果显示,与传统的人工噪声方案相比,所提方案可提高合法接收端的性能,改善保密容量。     

多用户间干扰下IRS辅助毫米波波束赋形研究

为解决IRS辅助毫米波通信系统中的干扰问题，提出了一种基于最大化系统总传输速率的联合波束赋形方案。该方案采用分数规划和二次型变换等技术，通过交替优化算法进行连续相移的联合波束赋形设计。针对实际硬件实现中的反射相移离散问题，进一步提出了一种离散相移的交替优化算法。仿真结果表明，该算法能够有效提高系统总传输速率，并且离散相移方案的总传输速率与连续相移方案趋近。     

射频能量采集非可信中继网络中物理层安全传输

射频能量采集技术为能量受限无线通信系统提供了一种有效的能量供给方式.假设能量受限中继节点具有射频能量采集能力,本文设计了中继非可信情况下的物理层安全传输方案,配置多天线的源节点采用发送天线选择策略来增强中继节点的能量采集性能,目的节点发送人工干扰来抑制非可信中继对保密信息的窃听.在瑞利块衰落信道条件下研究了所提方案的物理层安全性能,推导了系统安全中断概率、连接中断概率和安全吞吐量的闭式表达式.计算机仿真验证了理论推导的正确性,揭示了各系统参数对物理层安全性能的影响关系.     

协作网络中基于中继选择的协作波束赋形算法

针对多中继网络中所有中继节点都参与协作的协作波束赋形方法,提出了一种基于选择的协作波束赋形算法。该方法将最小化系统中断概率作为目标,得到一个次优的中继节点选择门限,小于门限的中继节点被逐一剔除,从而保证了网络中的资源只分配给有用的中继节点,获得了分集增益。该选择方法需搜索次数和中继节点的个数相等,因此大幅降低了选择过程的复杂度。蒙特卡洛仿真表明,选择波束赋形算法可有效提高系统中断概率性能和网络能量效率。     

Underlay协同频谱共享系统中基于SDF-DZFB的物理层安全传输

协同中继传输不仅能改善认知用户的传输可靠性,而且也能增强认知用户物理层安全性。针对Underlay模式下多中继协同频谱共享认知无线网络,本文设计了基于选择译码转发和分布式迫零波束成形（SDF-DZFB）的物理层安全传输方案,其中,假设存在单个被动窃听节点窃听中继节点的发送信号,在认知用户发送端同时考虑峰值干扰温度约束和最大发射功率约束,中继和认知用户目的端都受到主用户干扰。在此情况下,分析了认知用户发送端分别到目的端（称为主链路）和到窃听节点（称为窃听链路）的等效信干噪比的统计特性,进而推导出系统安全中断概率性能的闭式表达式。为了揭示所提物理层安全传输方案的安全分集度性能,本文进一步分析了高信噪比条件下安全中断概率的渐近表达式。计算机仿真验证了本文的理论分析结果。      

CDMA系统中联合功率控制、波束赋形与多用户检测

应用功率控制、波束赋形和多用户检测可以有效地消除和减少CDMA系统中的干扰。本文结合波束赋形和多用户检测的特性，提出一种应用波束赋形增益和多用户相关矩阵的解相关算法。基于算法的复杂性，提出一种区分聚集用户进行多用户检测的的算法。由于波束赋形能够消减主瓣波束之外的多用户干扰，对聚集移动台采用解相关检测达到减少运算量和消除多用户干扰的目的。对算法进行了仿真分析，证明了本算法的优越性。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.