CMOS工艺兼容的热电堆红外探测器

提出了一种CMOS工艺兼容的、并采用XeF2气体干法刻蚀工艺释放的热电堆红外探测器.探测器包括硅基体、框架、热电堆、支撑臂、红外吸收层、刻蚀开口等.作为红外吸收层的氧化硅/氮化硅复合介质膜具有多种形状的腐蚀开口,使用各向同性的干法刻蚀从正面刻蚀衬底释放器件.探测器尺寸为2 mm×2 mm,由20对多晶硅-铝热电偶组成,串联电阻16～18 kΩ.释放后的器件特性响应率13～15 V/W,探测率(1.85～2.15)×107 cmHz1/2/W,时间常数20～25ms.     

一种与CMOS工艺兼容的热电堆红外探测器

报道了一种与CMOS工艺兼容的微机械热电堆红外探测器。提出了具有一对热电偶的两层悬浮结构,其占空因子达到80%以上,并采用P/N多晶硅作为热电偶材料,黑硅作为吸收层材料。给出了器件的工作原理,对性能优化与制作的工艺流程进行了分析,结合所选材料的基本参数,得到了优化后的结构尺寸。通过理论计算,可以获得响应率大于1000 V/W,探测率大于1×108cmHz1/2W-1,时间常数小于40ms,噪声等效温差小于30mK的性能优良的热电堆红外探测器。该器件的吸收层位于结构中的顶层,金属布线位于底层,便于与后续电路集成。单元大小为25 m×25 m,有利于制作非制冷红外焦平面阵列。     

单片集成CMOS电阻真空传感器

设计了一种工作在恒电压模式的、微热板结构的单片集成电阻真空传感器芯片.提出了一种以CMOS集成电路中的介质层与钝化层为结构层、栅多晶硅为牺牲层、第二层多晶硅为加热电阻的微传感器单芯片集成工艺模式,制定了相应的工艺流程.采用0.6μm CMOS数模混合集成电路工艺,结合牺牲层腐蚀技术实现了单片集成真空传感器的加工,测试结果显示该芯片能够测量2～105Pa范围内的气压大小,且输出电压范围可调,验证了单片集成工艺的可行性.     

单片集成CMOS电阻真空传感器

设计了一种工作在恒电压模式的、微热板结构的单片集成电阻真空传感器芯片.提出了一种以CMOS集成电路中的介质层与钝化层为结构层、栅多晶硅为牺牲层、第二层多晶硅为加热电阻的微传感器单芯片集成工艺模式,制定了相应的工艺流程.采用0.6μm CMOS数模混合集成电路工艺,结合牺牲层腐蚀技术实现了单片集成真空传感器的加工,测试结果显示该芯片能够测量2～10^5Pa范围内的气压大小,且输出电压范围可调,验证了单片集成工艺的可行性.     

一种用于生物检测的半导体电场效应传感器

设计了一种简化的铝栅MOS半导体器件制作工艺流程,用6张掩模版成功制作出了基于表面电场效应原理的生物检测硅芯片传感器,采用SiO2-Si3N4复合栅介质层及耗尽型器件结构,以增强器件的识别与检测灵敏度。该传感器与常规铝栅MOS晶体管相比,去除了介质层表面的栅极导电层,代之以自组装技术制作生物薄膜并辅以栅参考电极作为控制栅极。用所制作的硅芯片传感器检测了相关生物蛋白质的电流响应,给出了该电流响应与器件沟道长度和沟道电阻及生物蛋白浓度等参数的关系,得到了较为满意的检测数据,达到了预期的基于表面电场效应的硅传感器制作和生物检测的目的。     

硅热电堆探测器件及制作

针对实现红外技术在夜间和一些死角方面应用的视觉辅助系统,把微机械加工技术和制作微细红外吸收膜的工艺应用到CMOS技术中,使热电堆实现了高性能化.利用运用PSG替代层的分离法制作用低压真空蒸镀法成膜的金黑膜,使吸收膜实现了微细化.制作出三种160 μm见方的原型传感器,它们在大气中的灵敏度分别达到300 V/W、149 V/W、60 V/W,响应时间常数达2 ms、0.46 ms、0.27 ms.还利用原型传感器制成了64×32像元焦平面列阵传感器(FPA).     

高深宽比深隔离槽的刻蚀技术研究

体硅集成MEMS器件中的一个非常重要的技术就是微结构与电路部分的电隔离和互连.由于体硅工艺与传统CMOS工艺不兼容,所以形成高深宽比的深隔离槽(宽约3 μm,深20～100 μm)是体硅集成中急待解决的工艺难题.本文采用MEMS微加工的DRIE(Deep Reactive Ion Etching)技术、热氧化技术和多晶硅填充技术,形成了高深宽比的深电隔离槽(宽3.6 μm,深85 μm).还提出了一种改变深槽形状的方法,使深槽的开口变大,以利于多晶硅的填充,避免了空洞的产生.     

CMOS兼容的微机械热电堆红外探测器的设计

提出了一种与CMOS工艺兼容、高响应率、低噪声的微机械热电堆红外探测器。该结构热电偶数目为两对,材料为P/N型多晶硅,吸收层材料为TiN。采用较少热电偶对的方式来降低噪声,引入共振谐振腔结构来提高红外吸收率。阐述了探测器的基本工作原理,通过仿真得到其重要的性能参数,并给出了器件具体的工艺流程,对器件尺寸进行了优化。理论上,其响应率大于1000 V/W,探测率大于2×108cmHz1/2W-1,噪声等效温差小于20mK,时间常数小于10ms,电阻值小于20k。     

一种GMOS SnO2气体微传感器的设计

采用TSMC 0.6 μm 1P3M标准CMOS工艺设计了一种检测O2浓度的SnO2气体微传感器.传感器材料是由实验分析及CMOS工艺共同确定,其多晶硅加热电阻温度系数小、功耗低,而SnO2敏感薄膜灵敏度高且稳定性良好,通过软件对器件进行热学模拟仿真并确定了传感器的结构及设计参数.芯片测试结果表明:所设计的MHP悬空结构的传感器反应速度快、抗干扰能力强、具有较高的灵敏度及稳定性,检测O2含量的浓度范围为15%～70%,满足了工艺要求.     

纳米多晶硅薄膜压力传感器制作及特性

给出一种纳米多品硅薄膜压力传感器,采用LPCVD法在衬底温度620℃时制备纳米多晶硅薄膜,基于MEMS技术在方形硅膜不同位置制作由4个薄膜厚度为63.0nm的掺硼纳米多晶硅薄膜电阻构成惠斯通电桥结构,实现对外加压力的检测.实验结果表明.当硅膜厚度75μm时,纳米多晶硅薄膜压力传感器在恒压源5.0V供电时,满量程(160kPa)输出为24.235mV,灵敏度为0.151mV/kPa,精度为0.59%F.S,零点温度系数和灵敏度温度系数分别为-0.124%/℃和-0.108%/℃.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

Complete approach to automatic identification and sub-pixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

A Versatile Mixed-Signal Pin Approach for Cost-Effective Test of Automotive ICs

Integrated circuits (ICs) intended for increasingly sophisticated automotive applications bring unique test demands. Advanced ICs for applications such as highly integrated automatic braking system (ABS) and airbag controllers combine high voltage digital channels, significant VI demands and precise timing capability. Along with continued missioncritical reliability concerns, the trend toward higher voltage operation and increased device integration requires specialized test capabilities able to extend across the wide operating ranges found in automotive applications. Among these capabilities, automotive test requirements increasingly dictate a need for a cost-effective versatile mixed-signal pin electronics with very high data rates reaching up to 50MHz with a voltage swing of-2 V to +28 V.     

Optical vibration and deviation measurement of rotating machine parts

It is of interest to get appropriate information about the dynamic behaviour of rotating machinery parts in service. This paper presents an approach of optical vibration and deviation measurement of such parts. Essential of this method is an image derotator combined with a high speed camera or a laser doppler vibrometer （LDV）.     

社长序言（英文）

正Happy New Year!As we step into a new year,we take a look back at the key feature topics covered in China Communications over the past 12 months and set out our expecta-     

Call for Papers

正Introduction Jointly sponsored by the China Institute of Communications(CIC)and the IEEE Communications Society(IEEE ComSoc)since the year 2013,China Communications,currently,is aiming to gradually realise the transition from journal to magazine content and style.     

INTEGRATION OF OPTICAL AND WIRELESS NETWORKS

正For a long time,optical and wireless systems/net-works are developed in separate communities witha few attempts for in-depth convergence.In fact,it prom-ises many advantages to combine the optical and wire-less technologies in the levels of systems and networks.Recently,both academia and industry have made manyefforts to enter a new phase of development to take op-tical and wireless systems as fully integrated networks.To provide high bandwidth and reliable service for bothfixed and mobile users,a well-designed network must     

Call for Papers—Feature Topic,Vol.12,No.3,2015

正Smart Grid Communications The electric power industry is undergoing profound changes as the industry aims to capture the promise of a smart grid for a sustainable energy future.Enabled by the advanced sensing devices such as Phasor Measurement Units(PMUs),increasingly powerful