共查询到20条相似文献,搜索用时 62 毫秒
1.
适合于低波段宽带多注速调管的四耦合槽π模强耦合双间隙输出腔的设计和讨论 总被引:4,自引:1,他引:3
该文设计了一种适合应用于低波段宽带多注速调管的四耦合槽π模强耦合双间隙输出腔,并对其独特的优点做了详细的分析和讨论。 相似文献
2.
3.
4.
5.
本文根据微波网络理论,建立了双间隙双耦合口输出回路间隙阻抗频率特性的冷测模拟计算方法。运用该方法,计算分析了某S波段双间隙双耦合口输出腔的间隙阻抗频率特性。结果显示,本方法与采用场分析法得到的结果符合良好。 相似文献
6.
π-TM610模同轴双间隙腔耦合同轴线输出电路 总被引:1,自引:0,他引:1
该文提出一种适合于X波段多注速调管的π-TM610模双间隙同轴腔的同轴线输出电路,并详细分析了其带宽和输出功率容限等重要性能,结果表明:π-TM610模双间隙同轴腔耦合同轴线之后,输出腔中各个电子注孔的特性阻抗仍然很均匀;但由于输出腔外观品质因数太大而且无法使其降低,导致输出频带较窄;输出功率容限则为1MW左右。因此它比较适合作为高射频段的高功率窄带多注速调管的输出电路。 相似文献
7.
提出了一种强耦合式带状注速调管多间隙输出腔, 并将之应用于Ka波段带状注速调管输出腔的设计. 此设计可以获得更好的输出耦合特性和理想的场形. 更重要的是, 这种结构的漂移管允许被设计为对工作频率的截止状态, 从而可以获得更理想的电场场形以利于注波互作用. 从表面电流的角度分析了这种设计的理论依据. 通过使用粒子模拟软件进行仿真, 在中心频率获得了稳定的功率输出, 互作用效率达到50%以上, 3dB带宽约75MHz. 相似文献
8.
9.
10.
速调管耦合双间隙腔输出回路的绝对稳定性判据 总被引:3,自引:1,他引:2
通过解析推导和适当的简化处理得到了速调管耦合双间隙腔输出回路的绝对稳定性判据,并对不同类型的耦合双间隙腔输出回路的稳定性进行比较和讨论. 相似文献
11.
A new technique to compute the coupling, as a function of frequency, between nonidentical resonators is presented in this paper. The structure is separated by introducing electric and magnetic wall boundary conditions on the plane of separation, and coupling coefficient is computed directly from the eigenvalues of the four individual structures. The proposed technique has been used to compute the coupling between coaxial combline resonators. It is found to be computationally much faster than the iterative technique. The computed results are in good agreement with the measured results. 相似文献
12.
A. M. Barnyakov A. E. Levichev D. A. Nikiforov 《Journal of Communications Technology and Electronics》2016,61(7):783-788
The coupling coefficient of two cavity resonators taking very small values is considered. A technique for measuring the coupling coefficient via loaded Q factors and coefficients of coupling with external lines is proposed. The dependence of the intercavity coupling coefficient on dimensions of the aperture of the diaphragm between the cavities is determined. The data obtained are compared with the values obtained using a technique based on finding the system resonance frequencies corresponding to phase angles 0 and π of intercavity oscillations. 相似文献
13.
Temperature dependence of composite microwave cavities 总被引:3,自引:0,他引:3
Kajfez D. Chebolu S. Kishk A.A. Abdul-Gaffoor M.R. 《Microwave Theory and Techniques》2001,49(1):80-85
Composite microwave resonant cavities contain several regions of different dielectric materials. The variation of the resonant frequency with temperature is described in terms of a linear model. One part of the frequency variation is caused by the physical expansion of material parts, and the other by the change in the relative dielectric constant. The frequency sensitivity coefficients for both types of variation are obtained with the use of a computer code for numerical analysis of the electromagnetic field inside bodies of revolution 相似文献
14.
15.
O. O. Drobakhin P. I. Zabolotnyy Ye. N. Privalov 《Radioelectronics and Communications Systems》2013,56(3):127-132
Simplified expressions are obtained for the calculation of the eigenfrequencies of a biconical cavity with large apex angles with the use of two symmetrical points at the boundaries of overlapping partial regions in the form of a spherical sector. Using these expressions, the dependence of the cavity eigenfrequencies on the apex angles of the conical elements is studied, and the results are compared with those obtained by the classical finite-element method. The applicability range of the simplified expressions is identified, and recommendations on their use are given. 相似文献
16.
非共轴腔之间的模式匹配特性 总被引:1,自引:0,他引:1
本文从腔体的模式理论出发,给出了基横模到基横模、一阶、二阶、三阶、四阶横模的模式耦合及功率耦合系数作为光束半径失配,相前曲率失配,及非共轴失配的函数的解析表达式,并进行了分析讨论,指出了在非共轴失配存在时,奇、偶、模之间的耦合系数不为零的结论。 相似文献
17.
D V Land 《The Journal of microwave power and electromagnetic energy》2006,40(2):119-128
Cavity-type coupling structures can be used for industrial microwave radiometric temperature measurement in lossy dielectrics. The cavity properties which determine the measured radiometric signal are defined and applied, and a simple technique for measuring these properties is described. 相似文献
18.
A study on the damage effect of a GaAs pseudomorphic high-electron-mobility transistor (pHEMT) low-noise amplifier (LNA) induced by a Ku-band microwave is presented in this paper based on an experiment and simulation study. The experimental results suggest that the burn-out in the first stage is responsible for the LNA damage. Scanning electron microscopy (SEM) and energy-dispersive x-ray spectroscopy (EDS) were used to observe the damage situation and compare the element composition before and after the high power microwave (HPM) injection. It is found that the gate metal is melted as a result of heat generation. The location beneath the gate near the source side is badly burned and splashes out. A detail simulation is performed by establishing a two-dimensional electric-thermal model considering several physical models and thermal parameters using the simulator Sentaurus-TCAD. The results show that the burn-out location is consistent with the experiment findings. Meanwhile, a temperature elevation occurs in both the positive and negative half cycles. Moreover, the damage to pHEMT shows the working voltage dependence, and the burn-out time increases with the increase in drain voltage. 相似文献
19.
Resonant frequency and unloaded Q factor of composite microwave cavities are computed using surface integral equations for axisymmetric objects. The equivalence principle is used to formulate the problem so that the unbounded space Green's function can be utilized. The numerical results are verified experimentally for many samples of conducting cavities and dielectric resonators inside conducting cavities. Also, cases with a sector of the rotational cavity are considered by introducing a conducting corner. The method allows the computation of the stored energy in each dielectric region and the unloaded Q factor. 相似文献