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常规IIR宽带波束形成器可以获得比FIR宽带波束形成器更好的性能,但其需要多极点的自适应调整过程,存在稳定性无法保证,计算复杂度较高等问题.本文提出一种新的基于IIR滤波器的宽带波束形成算法.该算法基于高阶Laguerre宽带波束形成器,利用双线性变换和函数束方法设计相应的低阶等价IIR宽带波束形成器.仿真实验及理论分析表明,该方法无需常规IIR宽带波束形成器的多极点自适应调整过程,在保证算法稳定性的同时,减少了计算复杂度,并提高了输出信干噪比(SINR). 相似文献
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针对宽带空时自适应波束形成中,增加抽头延迟线(TDL)数目导致空时维度增大从而计算量增加的问题,提出了一种改进的宽带自适应波束形成器。此改进结构基于Frost空时自适应处理的线性约束最小方差(LCMV)准则,抽头数目为空时Frost结构的一半,将阵列分为两类通道,奇通道和偶通道,奇通道选择抽头奇数阶时延间隔,偶通道选择抽头偶数阶时延间隔,在保证具有相同干扰性能基础上可大大降低空时维度与运算量。在理论上进行了干扰抑制性能分析,证明了改进结构与Frost空时结构干扰抑制之后的输出期望功率相同,亦证明了在阵元数目满足大于等于4的偶数时,其抗宽带噪声干扰后干扰剩余功率也与Frost空时结构的相同,影响两种结构输出信干噪比(SINR)的只有噪声部分。最后对比仿真证实了此改进结构的性能与理论分析的正确性与一致性。此结构可应用于宽带空时自适应处理中,具有一定的高效性。 相似文献
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提出了一种适合于近场宽带传声器阵列处理的空时子带波束形成新方法。该方法通过将一个空域子带阵列和时域子带多速率滤波器组合并来同时获得空域和时域两种子带系统的优点。计算机仿真比较了其与全带自适应波束形成方法的性能,结果表明该方法对干扰有较强的抑制能力,改善了宽带波束形成频域不一致问题,并且能够并行处理,为实际语音通信系统的应用提供了一种有利途径。 相似文献
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基于Frost 结构的Laguerre 宽带波束形成器可以获得比FIR 宽带波束形成器和IIR 宽带波束形成器更好的性能,但其需要单极点的最优求解过程,存在计算复杂度较高及收敛速度较慢等问题.该文提出一种基于广义旁瓣对消器(Generalized Sidelobe Canceller, GSC)的Laguerre 滤波器宽带波束形成算法.该算法首先建立基于GSC结构的Laguerre 宽带波束形成器模型,然后利用最小二乘方法给出一种低复杂度的极点求解方法,最后利用归一化最小均方根误差方法实现宽带波束形成.仿真实验及理论分析表明,该方法无需基于Frost 结构的Laguerre 宽带波束形成器单极点最优求解过程,在保证算法较高的输出信干噪比的同时,减少了计算复杂度,提高了收敛速度. 相似文献
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一种稳健的自适应波束形成器 总被引:8,自引:1,他引:7
当信号噪声比超过一定的门限时,线性约束自适应波束形成器对天线的幅相误差有很高的敏感度,即使在误差很小的情况下,期望信号也会如同干扰一样被抑制掉。该文通过对广义旁瓣相消器的阻塞矩阵加以改进,提出了一种对阵列天线误差有良好稳健性的自适应波束形成器。该方法基于广义旁瓣相消器结构,可方便地进行部分自适应,降低运算量。 相似文献
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在干扰方向和功率稳定的情况下,传统的自适应数字波束形成器能有效抑制干扰、提高信干噪比,但在干扰功率起伏的环境下,自适应数字波束形成器不能持续可靠地抑制干扰。针对这一问题,给出了一种增强信号中的干扰分量,再进行自适应波束形成的处理方法。该方法能根据需要对自适应数字波束形成器的自适应零点的零深进行调整,提高系统的抗干扰性能。理论分析和仿真实验验证了该方法的可行性。 相似文献
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High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET > PDMAT > TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center. 相似文献
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In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal (200) (2d = 0.4027 nm) is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line(w), the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line(x), the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines(y), the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line(z) in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line(q) in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution(λ/△ 2) is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy. 相似文献
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This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors. 相似文献
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YUXiao-hua XIANGYu-qun 《半导体技术》2005,30(2):30-32,37
An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB. 相似文献
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The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO>6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs. 相似文献
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We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network. 相似文献
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Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources' evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping (266 nm) at power densities of 25-153 kW/cm^2. The full width half maximum (FWHM) of the lasing mode is 0.67 nm 相似文献
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TANG Bin JIANG Xing-fang LIU Zhi-min 《光电子快报》2008,4(1):78-80
By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly. 相似文献
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Tian-hua Xu Feng Tang Wen-cai Jing Hong-xia Zhang Da-gong Ji Chang-song Yu Ge Zhou Yi-mo Zhang 《光电子快报》2008,4(4):292-294
Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited. 相似文献
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《中国通信》2014,(9)
正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its 相似文献