光敏开关器件微波传输特性的研究与分析

高性能的光敏开关器件是实现直接光控有源频率选择表面(AFSS)的关键。文中阐述了硫化镉光敏 薄膜的优点和长引脚硫化镉光敏电阻器件的劣势,对四款不同的贴片硫化镉光敏电阻直流特性与微波特性进行了 研究与分析。对加载有环保光敏电阻的圆环缝隙频率选择表面(FSS)进行实验验证,确定了单缝型微带线光控开关 作为直接光控AFSS 基础模型的有效性。同时,对直接光控AFSS 中常用半导体硅和同族体锗进行了微波微带开关 测试,表明锗并不适用于光控微波开关。最后对潜在可用于直接光控的新型半导体材料进行了展望。     

光敏器件

<正> 光敏器件包括光敏电阻、光敏二极管及光敏三极管等。光敏器件可以用来以可见光或红外光的形式控制报警器、测试仪、自动开关、继电器等多种装置或执行机构。因此光敏器件在自动化技术中起着极其重要的作用。 光敏电阻受光照后,其阻值会变小。光敏电阻的符号如图1所示,用来制作光敏电阻的典型材料有硫化镉(CdS)及硒化镉(CdSe)两种。光敏电阻的CdS或CdSe沉积膜面积越大,其受光照后的阻值变化也越大,故通常将沉积膜做成“弓”字形,以增大其面积。光敏电阻工作时的响应速度较慢,如CdSe光敏电阻的响应时间约为10ms,CdS的响应时间约为100ms。因此,光敏电阻通常都工作于直流或低频状态下。     

聚酰亚胺涂料在微细加工中的应用

阐述了聚酰亚胺涂料不同与常规材料的物理及化学特性,并利用其独特的性质将其应用在红外焦平面器件中的铟柱制备及微型金属杜瓦瓶用薄膜电缆制作中,通过实验解决了工艺中的难题,取得很好的效果.     

谈谈几种常用的光敏器件

光敏器件又称光电元件,是一种能将光信号变换成电信号的半导体器件。1.光敏电阻光敏电阻是根据半导体的光电效应制成的。所用的材料主要有硒、硫化镉、硫化铝、硒化镉、硒化镓、硅等。其中对可见光最为敏感的是硫化镉光敏电阻。它的     

谈谈几种常用的光敏器件

光敏器件又称光电元件,是一种能将光信号变换成电信号的半导体器件。1.光敏电阻光敏电阻是根据半导体的光电效应制成的。所用的材料主要有硒、硫化镉、硫化铝、硒化镉、硒化镓、硅等。其中对可见光最为敏感的是硫化镉光敏电阻。它的     

准分子激光刻蚀聚合物微图形制作研究

主要描述了紫外准分子激光刻蚀聚酰亚胺(polyimide,PI)制作微图案实验。通过这种刻蚀方法,成功地在PI上制作了微米量级线宽和亚微米量级深度的图案。     

新型强光敏性特种光纤的研究

本文研究了各种新型的强光敏性特种光纤,并结合我们的制作经验从光纤结构和制作过程上给予了详细的讨论。同时文章出给出了我们研制的Ｂ／Ｇｅ光敏光纤的结构剖面及其写入紫外光纤光栅的实验结果。     

LB膜及其应用

本文介绍一种新型超薄有机膜的制备技术以及该薄膜在光电器件方面的应用。报导了光敏管的制作工艺和其主要特性。     

多畴液晶显示器定向层表面预倾角的紫外调整

报道了两种由紫外光感生调整定向层表面预倾角的技术，紫外调整可使聚酰亚胺薄膜液晶的表面预倾角在小面积内作选择性的改变。基于聚酰亚胺的ＬＣ表面预倾角的这种选择性改变，提出了两种制造双畴液晶显示器的结构。三维模拟所得结果表明，对于所提结构，每个象素发为两个畴。利用这种方法在和了双畴扭曲向列试验屏与薄膜晶体管寻址双畴ＴＮ屏。本文叙述了紫外调整和其他制作以畴液晶显示器的方法不同，不需要采用通常的光敏抗蚀技术     

正性光敏聚酰亚胺研究与应用进展（二）

正性光敏聚酰亚胺（p—PSPI）是一类重要的集成电路（IC）封装材料,广泛用于IC器件的应力缓冲、表面钝化以及层间绝缘。与传统的负性光敏聚酰亚胺（n-PSPI）相比,p-PSPI无论在光刻精度还是环境友好性方面均表现出了更为优良的品质。文章综述了国内外p-PSPI电子封装材料的最新研究与应用进展状况。系统阐述了p-PSPI的光化学机理。对目前商业化p-PSPI产品的特性、在微电子以及光电子领域的应用和未来发展趋势进行了介绍。最后对国内高性能p-PSPI电子材料的研发工作提出了建议。     

CdS紫外探测器的研究

针对制导等应用领域对紫外探测器的需求,介绍了一种CdS半导体紫外探测器研制过程及取得的进展,叙述了器件的工作原理和制作工艺,并针对器件的响应率及量子效率等性能进行了测试,测试结果表明,该器件在探测波长410 nm的光线时,量子效率最高达到了44.5%。     

Planar multilevel interconnection technology employing a polyimide

A planar multilevel interconnection technology, called planar metallization with polymer (PMP), has been developed, which utilizes a polyimide known as PIQ (polyimide isoindroquinazoline-dione) as an interlevel dielectric. The PIQ is highly resistant to heat and is mechanically flexible. Its low impurity concentrations also make it very stable in semiconductors. The PMP processing techniques have been refined to the stage where ICs can be fabricated commercially. A PIQ film etchant forms fine via-holes up to 3/spl times/3 /spl mu/m/SUP 2/, and chip size can be reduced by placing bonding pads on the active region of the device. Highly reliable linear and 256-bit bipolar memory ICs have been realized through this technology.     

High‐Performance Ferroelectric Polymer Side‐Gated CdS Nanowire Ultraviolet Photodetectors

An efficient ferroelectric‐enhanced side‐gated single CdS nanowire (NW) ultraviolet (UV) photodetector at room temperature is demonstrated. With the ultrahigh electrostatic field from polarization of ferroelectric polymer, the depletion of the intrinsic carriers in the CdS NW channel is achieved, which significantly reduces the dark current and increases the sensitivity of the UV photodetector even after the gate voltage is removed. Meanwhile, the low frequency noise current power of the device reaches as low as 4.6 × 10^?28 A² at a source‐drain voltage V_ds = 1 V. The single CdS NW UV photodetector exhibits high photoconductive gain of 8.6 × 10⁵, responsivity of 2.6 × 10⁵ A W^?1, and specific detectivity (D*) of 2.3 × 10¹⁶ Jones at a low power density of 0.01 mW cm^?2 for λ = 375 nm. In addition, the spatially resolved scanning photocurrent mapping across the device shows strong photocurrent signals near the metal contacts. This is promising for the design of a controllable, high‐performance, and low power consumption ultraviolet photodetector.     

A new structure of the CdS-based surface-barrier ultraviolet sensor

High-resistivity CdS or ZnSe layers were grown in the CdS surface region during sensor fabrication. The results of comparative investigations are presented for known CdS ultraviolet sensors and Cu_1.8S-CdS junctions with interlayers. The layers incorporated in the space-charge regions reduce the tunnel diode currents by more than three orders of magnitude, with the high quantum efficiency of the structures being retained in the ultraviolet spectral region.     

（英）磁控溅射制备纳米晶GZO/CdS双层膜及GZO/CdS/p-Si异质结光伏器件的研究

本文中,采用磁控溅射制备Ga掺杂ZnO (GZO)/CdS双层膜在p型晶硅衬底上以形成GZO/CdS/p-Si异质结器件。纳米晶GZO/CdS双层膜的微结构、光学及电学特性,通过XRD、SEM、XPS、紫外-可见光分光光度计和霍尔效应测试系统表征。GZO/CdS/p-Si异质结J-V曲线显示良好的整流特性。在±3V时,整流比IF/IR(IF和IR分别表示正向和反向电流)已达到21。结果表明纳米晶GZO/CdS/p-Si异质结具有好的二极管特性,在反向偏压下获得高光电流密度。纳米晶GZO/CdS/p-Si异质结显示明显的光伏特性。由于CdS晶格常数在GZO和晶Si之间,它能作为一个介于GZO和晶Si之间的缓冲层,能有效地减少GZO和p-Si之间的界面态。因此,我们获得了GZO/CdS/p-Si异质结明显光伏特性。     

真空紫外辐射的模拟及其对聚合物材料的影响

介绍真空紫外线的模拟和射流式真空紫外辐射模拟设备(VUV)的工作原理、技术参数及特点,几种航天器用聚合物材料在真空紫外线作用下的损伤结果表明:VUV导致有机基体材料MoS2涂层寿命减小,无机基体材料MoS2涂层寿命增加。VUV对 CF/EP的纤维和基体表面有明显的破损,导致力学性能下降。VUV与温度交变对聚酰亚胺吸光涂层的力学性能有明显影响。VUV引起聚乙烯和橡胶材料不同的附加变形。     

GaAs microwave power FET with polyimide overlay interconnection

An overlay interconnection technology has been developed for GaAs microwave power FETs, using polyimide as an insulator. An output power of 1017 mW at 4.3 dB gain was achieved at 8 GHz with 27° power added efficiency from a device with a gate width of 1.2 mm. Comparison with devices without overlay interconnection and having a narrower gate width revealed no evidence for degradation in device performance attributable to the interconnection technology.     

Synthesis of Au–CdS Core–Shell Hetero‐Nanorods with Efficient Exciton–Plasmon Interactions

The synthesis of large lattice mismatch metal‐semiconductor core–shell hetero‐nanostructures remains challenging, and thus the corresponding optical properties are seldom discussed. Here, we report the gold‐nanorod‐seeded growth of Au–CdS core–shell hetero‐nanorods by employing Ag₂S as an interim layer that favors CdS shell formation through a cation‐exchange process, and the subsequent CdS growth, which can form complete core–shell structures with controllable shell thickness. Exciton–plasmon interactions observed in the Au–CdS nanorods induce shell thickness‐tailored and red‐shifted longitudinal surface plasmon resonance and quenched CdS luminescence under ultraviolet light excitation. Furthermore, the Au–CdS nanorods demonstrate an enhanced and plasmon‐governed two‐photon luminescence under near‐infrared pulsed laser excitation. The approach has potential for the preparation of other metal‐semiconductor hetero‐nanomaterials with complete core–shell structures, and these Au–CdS nanorods may open up intriguing new possibilities at the interface of optics and electronics.     

CdS薄层对有机电致发光器件性能的影响

将光电材料硫化镉(CdS)薄层插入到结构为ITO/NPB/Rubrene/NPB/DPVBi/Alq3/LiF/Al的白光有机发光器件(OLED)的Alq3和LiF之间,研究了CdS对OLED性能的影响。结果表明,0.1nm厚的CdS插入Alq3和LiF之间的器件性能最好。器件电压从7 V变化到14 V时,色度均在白光的中心区域;当电压为7V时,器件的最大电流效率为9.09cd/A;当电压为14V时,器件的最大亮度为16 370cd/m2。不加CdS时,当电压为8V时,器件的最大效率为5.16cd/A;当电压为14V时,最大亮度为6 669cd/m2。加CdS的器件比不加CdS的器件最大效率提高了1.76倍,最大亮度提高了2.42倍。     

A model for the CdS solar cell

The CdS solar cell is a photovoltaic device made from a thin-evaporated film of CdS and a chemically formed layer of copper sulfide. A model is presented which describes the formation of the p-type copper-sulfide layer into the n-type CdS material and the resulting p-n junction. The model explains the physical, electrical, and electrooptical properties of the device and its mode of operation.