有偏压光伏光折变晶体中低振幅非相干耦合孤子对

从理论上研究了有偏压的光伏光折变晶体中低振幅屏蔽光伏孤子对的特性，给出了明一明、暗一暗屏蔽光伏孤子对的单孤子解。它们起源于对外电场的非均匀空间屏蔽和光伏效应，不同于起源于对外电场非均匀空间屏蔽孤子和起源于光伏效应的光伏孤子，具有有趣的特性。当光伏效应可忽略时，它们的非线性波动方程就转化为低振幅屏蔽孤子对的非线性波动方程，它们就转化为低振幅屏蔽孤子对；当外偏压为零时，它们的非线性波动方程就转化为低振幅闭路和开路光伏孤子对的非线性波动方程，它们就转化为低振幅闭路和开路光伏孤子对。如果载体光束具有相同的偏振和波长以及互不相干时，这些孤子对就能得到，相关的例子在光伏光折变晶体铌酸锂(LiNbO3)中给出。     

Alkali Metal Cations as Charge-Transfer Bridge for Polarization Promoted Solar-to-H2 Conversion

Utilization of spontaneous polarization electric field of ferroelectric materials to realize the spatial separation and fast transfer of photogenerated charges has been regarded as a promising strategy to fabricate highly efficient photocatalysts. Herein, a novel heterostructure is constructed by coupling potassium poly(heptazine imide) (K-PHI) with ferroelectric Ba_xSr_1-xTiO₃ (B_xST) through a facile electrostatic self-assembly strategy. The ionic species of K-PHI can neutralize the polarized charges in B_xST to form intimate interfacial contact, substantially boosting the internal electric field. Notably, K⁺ cations intercalated into K-PHI act as charge-transfer bridge to promote migration and separation of photogenerated charge carriers. As a result, a significantly improved H₂-evolution rate of 1087.4 µmol h⁻¹ g⁻¹ with an apparent quantum yield (AQY) of 8.05% at 420 nm is achieved over 5% K-PHI/B_0.8ST, standing among the best polymeric carbon nitride-based photocatalysts reported up to date. Moreover, the extreme stability of the catalysts is evidenced by remaining outstanding catalytic performance even after storage for half a year. This strategy can be extended to other alkali metal (Na⁺ and Cs⁺) modified polymeric materials, highlighting the key role of the bridging ions in constructing polarized heterostructure, which sheds light on the design of ferroelectric-assisted photocatalysts.     

外场对InPBi量子阱中激子结合能的影响

在有效质量近似下运用变分法计算了InAlAs/InPBi/InAlAs量子阱中的激子结合能随阱宽、Al组分、Bi组分的变化情况,分析了外加电场和磁场对激子结合能的影响。结果表明：激子结合能随阱宽增大呈现先增大后减小的趋势;随Al、Bi组分的增大,激子结合能也逐渐增大;外加电场较小时对激子结合能的影响很小,外加电场较大时破坏了激子效应;激子结合能随外加磁场增大呈现单调增大的趋势。计算结果对InAlAs/InPBi/InAlAs量子阱在光电子器件方面的应用有一定指导意义。     

双光子光折变介质中屏蔽光伏空间孤子

为了得到更完善的双光子屏蔽光伏孤子理论,采用光束的空间宽度不是远小于晶体宽度的条件,对有偏压的双光子光伏光折变介质中空间光孤子理论进行了修正,得出了明孤子和暗孤子数值积分解。结果表明,双光子屏蔽光伏孤子源于对外加电场的非均匀空间屏蔽和光伏效应,不同于起源于对外电场非均匀屏蔽的屏蔽孤子和起源于光伏效应的光伏孤子。当光伏效应被忽略时,屏蔽光伏孤子退化成屏蔽孤子,空间电荷场就是屏蔽孤子的空间电荷场;当外加电场为0时,屏蔽光伏孤子退化成开路或闭路的光伏孤子,空间电荷场就是晶体中的光伏场。     

Study on the internal conversion dynamics following different electron transfer at a donor/acceptor polymer heterointerface

By constructing a donor/acceptor (D/A) polymer heterointerface, we theoretically study the internal conversion (IC) dynamics following different electron transfer at the D/A interface in the framework of a tight-binding model combined with a nonadiabatic evolution method. We find that different higher-lying charge-transfer (CT) states can form at the D/A interface with the natures determined by the transferred electron energy. As compared with the lowest-lying CT state, these higher-lying CT states are spatially more delocalized and energetically more prone to separate into free charges. By simulating the IC relaxation dynamics of these higher-lying CT states, we find that their timescales are closely related to the transferred electron energy, as well as the D/A interfacial electronic structure. In addition, considering that the IC relaxation dynamics is vibrationally assisted, effect of the vibrational damping on the process is discussed. These researches should be of crucial importance for further understanding the photovoltaic process at a D/A polymer heterointerface, especially the “hot CT mechanism” experimentally suggested to explain the highly efficient charge separation in high-performing D/A polymer solar cells.     

Device modeling of ferroelectric memory field-effect transistor (FeMFET)

A numerical analysis of the electrical characteristics for the ferroelectric memory field-effect transistors (FeMFETs) is presented. Two important structures such as the metal-ferroelectric-insulator-semiconductor field-effect transistor (MFISFET) and metal-ferroelectric-metal-insulator-semiconductor field-effect transistor (MFMISFET) are considered. A new analytic expression for the relation of polarization versus electric field (P-E) is proposed to describe the nonsaturated hysteresis loop of the ferroelectric material. In order to provide a more accurate simulation, we incorporate the combined effects of the nonsaturated polarization of ferroelectric layers and the nonuniform distributions of electric field and charge along the channel. We also discuss the possible nonideal effects due to the fixed charges, charge injection, and short channel. The present theoretical work provides some new design rules for improving the performance of FeMFETs.     

Electric field penetration and perturbation problems of anonuniform cylindrical cavity with a slot

In bipolar coordinates, a nonuniform conducting cylindrical cavity with a slot in a uniform electric field E₀ is analyzed. The authors investigate the electric field penetration of a slotted cylindrical cavity through the slot and the electric field perturbation of an incomplete conducting cylinder. A family of objects are included by changing the structural parameters of the nonuniform cylindrical cavity with a slot. Both analytical expressions and numerical results of some special structures are given     

Electro‐Optics of Colloidal Quantum Dot Solids for Thin‐Film Solar Cells

The electro‐optics of thin‐film stacks within photovoltaic devices plays a critical role for the exciton and charge generation and therefore the photovoltaic performance. The complex refractive indexes of each layer in heterojunction colloidal quantum dot (CQD) solar cells are measured and the optical electric field is simulated using the transfer matrix formalism. The exciton generation rate and the photocurrent density as a function of the quantum dot solid thickness are calculated and the results from the simulations are found to agree well with the experimentally determined results. It can therefore be concluded that a quantum dot solid may be modeled with this approach, which is of general interest for this type of materials. Optimization of the CQD solar cell is performed by using the optical simulations and a maximum solar energy conversion efficiency of 6.5% is reached for a CQD solid thickness of 300 nm.     

Exciton‐Charge Annihilation in Organic Semiconductor Films

Time‐resolved optical spectroscopy is used to investigate exciton‐charge annihilation reactions in blended films of organic semiconductors. In donor–acceptor blends where charges are photogenerated via excitons, pulsed optical excitation can deliver a sufficient density of temporally overlapping excitons and charges for them to interact. Transient absorption spectroscopy measurements demonstrate clear signatures of exciton‐charge annihilation reactions at excitation densities of ≈10¹⁸ cm^?3. The strength of exciton‐charge annihilation is consistent with a resonant energy transfer mechanism between fluorescent excitons and resonantly absorbing charges, which is shown to generally be strong in organic semiconductors. The extent of exciton‐charge annihilation is very sensitive not only to fluence but also to blend morphology, becoming notably strong in donor–acceptor blends with nanomorphologies optimized for photovoltaic operation. The results highlight both the value of transient optical spectroscopy to interrogate exciton‐charge annihilation reactions and the need to recognize and account for annihilation reactions in other transient optical investigations of organic semiconductors.     

Study of multiple photovoltaic processes in stacked organic active layers

By using optical electric-field-induced second-harmonic generation (EFISHG) measurement, we studied multiple photovoltaic (PV) effects which exist in multi-layer devices consisting of multiple pentacene and C₆₀ layers stacked together in various sequence. Results verified that the photovoltaic effects happen on every donor–acceptor (DA) interface and induce multiple electric fields inside the devices. Meanwhile, the light degradation in film thickness direction changes the intensity and the relaxation time of the established internal electric fields. For the multi-layer devices with more than one DA interface, the internal electric fields with opposite directions always co-exist, which leads to suppress the total photovoltaic effect. Finally, we showed that the interaction between different internal electric fields is inhibited by decreasing the charge accumulation inside the organic active layer and thus the total PV effect of the device can be enhanced.     

Merocyanine/C60 Planar Heterojunction Solar Cells: Effect of Dye Orientation on Exciton Dissociation and Solar Cell Performance

In this study the charge dissociation at the donor/acceptor heterointerface of thermally evaporated planar heterojunction merocyanine/C₆₀ organic solar cells is investigated. Deposition of the donor material on a heated substrate as well as post‐annealing of the complete devices at temperatures above the glass transition temperature of the donor material results in a twofold increase of the fill factor. An analytical model employing an electric‐field‐dependent exciton dissociation mechanism reveals that geminate recombination is limiting the performance of as‐deposited cells. Fourier‐transform infrared ellipsometry shows that, at temperatures above the glass transition temperature of the donor material, the orientation of the dye molecules in the donor films undergoes changes upon annealing. Based on this finding, the influence of the dye molecules’ orientations on the charge‐transfer state energies is calculated by quantum mechanical/molecular mechanics methods. The results of these detailed studies provide new insight into the exciton dissociation process in organic photovoltaic devices, and thus valuable guidelines for designing new donor materials.     

双光子光折变晶体中宽光束的调制不稳定性

为了得到稳态情况下一维宽光束在有偏压双光子光伏光折变晶体中的调制不稳定性的结果,通过空间电荷场的非局域性处理得到得了一维调制不稳定性的增长率.采用数值分析的方法对一维调制不稳定性的增长率的特性进行了理论分析.结果表明:在入射光束强度一定的情况下,外加电场为正值时,调制不稳定性增长率随电场的增加而增大,当外加电场为负值时...     

Cd1-xMnxTe/CdTe抛物量子阱内激子结合能的研究

在有效质量近似下采用变分法计算了Cd1-xMnxTe/CdTe抛物量子阱内不同Mn组分下激子的结合能,给出了结合能在不同Mn组分下随阱宽、垒宽、外加电场的变化情况。 结果表明:激子结合能是阱宽的一个非单调函数，随阱宽的变化呈现先增加后减小的趋势，而且随着Mn组分增大, 激子结合能达到最大值的阱宽相应变小, 这与材料的带隙改变有关;激子结合能随垒宽逐渐增大然后趋于稳定值，这与波函数向垒中的渗透有关；在一定范围内电场对激子结合能的影响很小,而且Mn组分越大对激子结合能影响越小，但电场强度较大时会破坏激子效应。计算结果可以对基于半导体抛物形量子阱发光器件设计制作提供一些理论依据。     

On the wide-band CW illumination of large-scale systems. II. Therhombic illuminator

The Phillips Laboratory has designed and constructed a continuous wave illuminator for studying the responses of large-scale systems subject to vertically or horizontally polarized electromagnetic stresses incident from the horizontal. The illuminator is developed by a nonuniform two-wire transmission line oriented over the system under test. When the wires are driven from a common mode voltage with respect to the ground a vertically polarized electric field is generated and when the wires are driven from equal but opposite voltages a horizontally polarized electric field is developed. The structure is called the rhombic illuminator since the wire configuration is very similar to the rhombic antenna. In order to illustrate the use of the illuminator, data are presented for the illumination field and for the response of an illuminated aircraft recorded at the Phillips Laboratory     

Charge Photogeneration in Few‐Layer MoS2

The 2D semiconductor MoS₂ in its mono‐ and few‐layer form is expected to have a significant exciton binding energy of several 100 meV, suggesting excitons as the primary photoexcited species. Nevertheless, even single layers show a strong photovoltaic effect and work as the active material in high sensitivity photodetectors, thus indicating efficient charge carrier photogeneration. Here, modulation spectroscopy in the sub‐ps and ms time scales is used to study the photoexcitation dynamics in few‐layer MoS₂. The results suggest that the primary photoexcitations are excitons that efficiently dissociate into charges with a characteristic time of 700 fs. Based on these findings, simple suggestions for the design of efficient MoS₂ photovoltaic and photodetector devices are made.     

具有p型埋层PSOI结构的耐压分析

提出了一种具有p型埋层的PSOI器件耐压新结构,称为埋层PSOI(BPSOI).其耐压机理是,通过p型埋层电荷产生的附加电场调制作用,导致表面电场分布中产生新的峰而使击穿电压提高;p型埋层的电中性作用增加了漂移区优化的浓度而使比导通电阻降低.借助二维MEDICI数值分析软件,获得此结构较一般PSOI的击穿电压提高52%～58%、比导通电阻降低45%～48%.     

光伏电场对大容量体全息存储的影响与抑制

Fe∶LiNbO3 晶体有很强的光伏效应。通过理论分析和实验验证 ,在全息存储过程中 ,光伏效应会在晶体表面产生非均匀的光伏直流电场 ,它不仅降低了材料的动态范围 ,并且引起了Bragg失配 ,使得再现图像失真。消除光伏直流电场的方法是使用电解质溶液短路晶体表面电荷。采用这种方法 ,在晶体一个公共区域内 ,可存储 1 0 0 0幅能够清晰再现的全息图像     

CuPc/C60 heterojunction thin film optoelectronic devices

The optoelectronic properties of heterojunction thin film devices with ITO/CuPc/C60/A1 structure have been investigated by analyzing their current-voltage characteristics,optical absorption and photocurrent.In this organic photovoltaic device,CuPc acts as an optically active layer,C60 as an electron-transporting layer and ITO and A1 as electrodes.It is observed that,under illumination,excitons are formed,which subsequently drift towards the interface with C60,where an internal electric field is present.The excitons that reach the interface are subsequently dissociated into free charge carriers due to the electric field present at the interface.The experimental results show that in this device the total current density is a function of injected carriers at the electrode-organic semiconductor surface,the leakage current through the organic layer and collected photogenerated current that results from the effective dissociation of excitons.     

Enhancement of the Stark effect in coupled quantum wells foroptical switching devices

Significant enhancement of the Stark effect on the electronic state and the optical dipole moments of coupled quantum wells is shown theoretically. The multiband effective mass theory (k&oarr;-p&oarr;), which takes into account coupling between heavy- and light-hole states of the coupled quantum wells is used. Mixing of states in the coupled quantum wells leads to the splitting of subband energy levels. An applied electric field causes repulsion between the split levels as well as the spin-splitting of the valence-subband structure. Comparison with the single quantum well shows that the optical dipole moment is substantially more reduced for the coupled quantum wells at the same electric field because of enhanced charge separation in this structure. A variational method is used to solve the exciton problem in coupled quantum wells. Calculated exciton peak positions versus electric field show very good agreement with recent experiments. Calculated exciton absorption spectra for the ground state show the quenching of the exciton peak at F=30 kV/cm at 5 K. These results may have interesting applications to low-voltage optoelectronic switching devices based on the quantum-confined Stark effect     

耦合GaN/AlxGa1-xN量子点的非线性光学性质

在有效质量和偶极矩近似下,考虑了由于压电极化和自发极化所引起的内建电场和量子点的三维约束效应,对纤锌矿对称Al_xGa_(1-x)N/GaN/Al_xGa_(1-x)N/GaN/Al_xGa_(1-x)N圆柱型应变耦合量子点中激子非线性光学性质进行了研究。计算结果表明,内建电场使吸收光谱向低能方向移动,发生红移现象,并且使吸收峰强度大大减小。量子限制效应使光吸收峰强度随着量子点尺寸的减小而增强,并且随着量子点尺寸的减小,吸收光谱发生蓝移现象。