基于SIMULINK的扫描电机控制系统仿真

在建立扫描电机电磁模型的基础上，通过对电机需完成的特定运动功能进行数学分析，应用SIMULINK模块进行扫描电机的控制系统仿真设计，综合设计一套控制系统，以满足扫描电机实现特定运动功能的要求，最后利用试验验证了控制系统仿真的正确性。     

基于多场耦合的电机暂态温度场研究

针对复杂工况下电机不稳定发热引起的温度场暂态计算问题,根据不稳定发热的规律建立电磁场与温度场的二维耦合模型。文中依据小型式异步电机的结构特点,进行电磁场-热场二维模型的结构参数、边界条件参数、材料的电、热物理参数的计算、等效及配置;依据复杂工况下发热变化的规律,进行耦合频率、热源耦合方式的设计及相关参数计算配置,实现不稳定负载下电机的暂态温度场计算并考察电机各部分的实际最高温度分布状况。基于实验平台的方案设计和搭建,进行温升实验。通过对比分析电机暂态温度场的仿真和实验数据,验证了二维模型参数等效的合理性和多场耦合法能够准确地计算复杂工况下电机全暂态温度场。     

铁磁性基体与金属线阵列复合体系的双负材料特性

基于铁磁性基体与金属线阵列复合结构等效电磁参数的长波近似模型,设计了一种应用铁磁性基体的二维双负材料。根据带有介质包裹层的金属线的散射特性,采取多重散射方法计算了铁磁性基体与金属线阵列复合结构的传输谱;还通过全波仿真提取了单元结构的等效电磁参数。这些数值结果与长波近似模型的理论结果取得了很好的一致,确认了该模型的正确性。通过仿真周期复合体系中的电磁场分布,在所设计的双负频带内观察到了反向波现象,进一步验证了所设计的复合体系的双负特性。     

直线振动电机非线性电磁特性有限元仿真研究

对动铁式直线振动电机进行研究,采用有限元仿真和实验测试相结合的方法,对直线电机的电磁力-位移特性进行分析研究.实验结果表明仿真的正确性.创新点在于该电机为非线性电磁出力特性,特别适于压缩机等非线性负载应用场合,且无永磁电机失磁弱点.电磁分析为动态电磁力特性研究和结构优化设计提供了基础.     

基于解析模型的永磁同步电机优化设计

永磁同步电机的电磁转矩和涡流损耗是两个重要指标,在体积等限制条件下,有效提高电磁转矩并降低转子涡流损耗是电机设计的关键。针对这个问题,文中采用解析法,分别计算电磁转矩和涡流损耗,并采用粒子群优化算法,对电机尺寸参数进行优化设计。解析模型包括电枢反应磁场和空载磁场模型。在计算涡流损耗时考虑涡流反应、永磁体周向分段等,优化算法的目标函数并使用权值将多目标转换成单目标。通过解析解与时步有限元数值解的对比可看出,解析解的误差在2%左右。参数影响分析的响应面显示,在定子绕组节距为25°时,电磁转矩和涡流损耗相关性一致。优化迭代结果显示,优化设计降低了76%的平均涡流损耗、22%的平均电磁转矩和68%的电磁转矩波动。     

高温超导发电讥的结构优化

为了降低高温超导发电机气隙磁密的谐波幅值,提高超导电机的稳定性。本文在Ansys基础上通过有限元电磁场计算并结合遗传算法对高温超导发电机屏蔽和励磁绕组的结构参数进行了优化,结果发现气隙磁密各次谐波幅值明显降低,气隙磁密波形得到明显改善。为了验证优化效果,本文利用时步有限元对优化前后电机模型进行空载电动势计算,发现空载谐波电动势幅值明显降低。最后本文分析了优化后励磁绕组磁场强度,进而分析了励磁绕组稳定性。     

基于ANSYS的惯性平台电磁场分析

对惯性平台系统中陀螺电机和力矩电机进行了电磁场分析,陀螺电机的磁场强度较小,所以以力矩电机为磁场源进行了平台电磁场分析,分析结果为以后进行平台电磁兼容性设计提供了依据。     

自动门用直线感应电机设计与仿真

直线感应电机传动结构在自动门中的应用越来越广泛。本文设计出一种自动门用的直线感应电机,并进行了有限元软件的电磁场仿真和运动仿真,将电磁设计结果与仿真结果进行比较,两者相吻合。从而验证,该直线电机电磁设计具有可行性。     

高温超导直线感应电机的设计和电磁分析

本文介绍了高温超导直线感应电机的设计和电磁分析方法。首先,使用遗传算法得到一组优化的电机参数;然后,为了确定电机参数的准确性需要用有限元方法对得到的电机参数建模仿真;垂直穿过高温超导绕组的磁场(垂直磁场)对电机的临界电流影响很大,为了增加电机的临界电流,穿过电机初级超导绕组的垂直磁场应该尽可能地小。最后,要对建立的电机模型进行详细的电磁分析,以保证各项性能指标满足要求。     

新型建模及优化方法在BSRM中的应用

针对电机参数优化设计问题,引入多支持向量机与混沌优化算法,优化设计磁悬浮开关磁阻电机的结构参数。采用有限元仿真建立样本空间,采用多支持向量机构建磁悬浮开关磁阻电机的非参数模型,基于该模型,以满足额定电磁转矩为条件,优化电机参数,优化目标为最大的悬浮力、最小的转矩脉动、最小的绕组间互感,最优的电机结构参数通过混沌优化算法得到。仿真结果表明,BSRM利用多支持向量机所建立的非参数模型高效且准确,采用此优化方法设计的BSRM转矩脉动小、悬浮力大、绕组间互感小。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its