双委夜蛾触角感器的扫描电镜观察

本研究采用扫描电子显微技术,对双委夜蛾Athetis dissimilis成虫触角及感器类型进行详细观察。结果表明:双委夜蛾雌雄成虫触角感器类型和特征差异不显著,二者均为丝状,分布有8种类型的感器,分别为毛形感器、刺形感器、锥形感器、栓锥形感器、腔锥形感器、鳞形感器、耳形感器和B9hm氏鬃毛。其中6种类型的感器(毛形感器、刺形感器、锥形感器、栓锥形感器、腔锥形感器、耳形感器)表面具有单孔和多孔,表明它们的主要功能是嗅觉。锥形感器和栓锥形感器又分为不同的亚型,锥形感器分为两个亚型(SbaⅠ和Ⅱ),栓锥形感器分为三个亚型(SstⅠ,Ⅱ和Ⅲ)。栓锥形感器Ⅰ和Ⅱ在数量上较少。在雌雄蛾触角上毛形感器数量最多,而且雄蛾毛形感器数量明显多于而且长于雌蛾。     

花布灯蛾触角感器扫描电镜观察

利用扫描电子显微镜观察花布灯蛾成虫触角感器的类型、数量和分布.结果表明:在花布灯蛾雌雄成虫触角上均存在8种感器,包括鳞形感器、毛形感器(3个亚型)、刺形感器、锥形感器、耳形感器、栓锥形感器、腔锥形感器和B?hm氏鬃毛.结合各种感器的形态、分布和显微结构对其可能具有的功能进行了推断分析.     

栎黄枯叶蛾触角感器的扫描电镜观察

利用扫描电镜对栎黄枯叶蛾成虫（ Trabala vishnou gigantina）触角进行了观察。结果表明：栎黄枯叶蛾雌雄蛾触角上均含有5种感器：毛形感器、刺形感器、鳞形感器、栓锥形感器和Bohm氏鬃毛,其中毛形感器最发达。各种感器在雌、雄蛾触角上类型和分布大体相同,只是在数量上有所不同。该结果可为进一步研究信息素对栎黄枯叶蛾的行为功能提供依据。     

5种稻田突眼隐翅虫触角感器的超微结构研究

本文利用扫描电镜对小黑突眼隐翅虫Stenus melanarius、瘦突眼隐翅虫S.tenuipes、黑胫足突眼隐翅虫S.macies、虎突眼隐翅虫S.cicindeloides和阑氏突眼隐翅虫S.lewisius等5种稻田突眼隐翅虫雌、雄成虫的触角感器进行了观察和比较研究.结果表明,5种突眼隐翅虫的触角感器类型基本相同,均有5种感器,其中毛形感器和锥形感器又分为3个亚型:即B?hm氏鬃毛、毛形感器(毛形感器1、毛形感器2、毛形感器3)、刺形感器、锥形感器(锥形感器1、锥形感器2、锥形感器3)和栓锥形感器,同种感器形态相似;各种感器在触角上的分布相对稳定,具有一定规律;感器的分布、数量在种间及雌、雄两性间无显著差异.因此,触角感器可能不宜作为突眼隐翅虫种类鉴定的依据之一.     

两种苔蛾触角感器扫描电镜观察

应用扫描电子显微镜观察了美苔蛾Miltochrista miniata和之美苔蛾M.ziczac的触角,发现5种触角感器:毛形感器(3个亚型)、刺形感器、腔锥形感器(2个亚型)、栓锥形感器和B?hm氏鬃毛(2个亚型).触角感器数量最多的是毛形感器,其次为B?hm氏鬃毛,栓锥形感器的数量最少,其余两种感器数量居中;之美苔蛾的触角感器的总数多于美苔蛾;两种苔蛾雄性个体触角感器的总数均多于雌性个体触角感器的总数.本文对两种苔蛾触角各感器的形态、分布进行描述,对种间、种内差异进行讨论.     

黑水虻成虫体表超微感器(Ⅰ):触角和下颚须

运用扫描电镜对重要的有机废物处理昆虫黑水虻(Hermetia illucens L.)成虫触角和下颚须的感器进行了观察和描述。主要发现5种感器,分别为毛形感器、腔锥形感器、刺形感器、锥形感器和B9hm氏鬃毛。其中触角分布有毛形感器、腔锥形感器、刺形感器和B9hm氏鬃毛,下颚须5种感器均有分布。结合各种感器的形态、分布和显微结构对其可能具有的功能进行了讨论分析。     

雪峰虫草寄主巨疖蝙蛾成虫触角感器扫描电镜观察

利用扫描电镜对雪峰虫草(Ophiocordyceps xuefengensis)重要寄主巨疖蝙蛾(Endoclita davidi)成虫触角上的感器进行了观察和描述.结果表明,巨疖蝙蛾雌雄成虫触角均为丝状,分布有毛形感器、刺形感器、锥形感器、腔锥形感器、板形感器、鳞形感器和B(o)hm氏鬃毛7种感器.其中,刺形感器、锥形感器、腔锥形感器和板形感器只分布于鞭节;毛形感器在柄节和鞭节均有分布;B(o)hm氏鬃毛分布于雌、雄的柄节和梗节的基部;鳞形感器在各节均有分布,尤其在鞭节的种类和数量最多.雌、雄个体间触角感器类型及分布未见明显差异.     

沙柳木蠹蛾性信息素通讯系统的扫描电镜观察

沙柳木蠹蛾(Holcocerus arenicola staudinger)是危害沙柳的一种钻蛀性害虫,在其求偶、交配过程中,性信息素起着关键作用。作者对沙柳木蠹蛾雌蛾腹末第VIII节、第IX节、第VIII～IX节节间膜及产卵器表面的化学物质采用溶剂提取并进行气相色谱分析,根据性信息素主成分的保留时间和含量确定性信息素分泌腺体的分布部位。同时对雌蛾性信息素分泌腺体和雄蛾触角进行了扫描电镜观察。结果表明:沙柳木蠹蛾的性信息素分泌腺体主要分布于雌蛾腹末第8～9节的节间膜上,表面密集分布着大量的刺状锥形突出体;雄蛾触角中分布有6种感器,分别为毛形感受器、刺形感受器、腔锥形感受器、芽形感受器、柱形感受器和锥形感受器,其中以毛形感受器最多。雄蛾触角上毛形感受器的分布明显比雌蛾触角上的数量多且密集。     

野蚕黑卵蜂成虫触角化学感器的超微结构和功能

对野蚕黑卵蜂成虫触角上多侧孔感器和端孔坛形感器超微结构的透射电镜观察表明：在多侧孔感器上，微孔分布于感器的外侧面（迎风面），感器内部具典型的嗅觉感器结构；端孔坛形感器上，微孔分布于感器的顶端，内部神经细胞丰富，具典型的味觉感器（接触化学感器）结构。野蚕黑卵蜂雌蜂触角不同程度切除试验表明：多侧孔感器与寻找寄主栖境（桑树）有关，端孔坛形感器则与对其寄主卵的识别和接受有关。     

麻点豹天牛成虫感器的扫描电镜研究

麻点豹天牛 (ＣｏｓｉｎｅｓｔｈｅｓｓａｌｉｃｉｓＧｒｅｓｓｉｔｔ)是危害杨 (Ｐｏｐｕｌｕｓｓｐｐ .)柳 (Ｓａｌｉｘｓｐｐ .)等多种树木枝干的钻蛀性害虫 ,受其危害的树木往往千疮百孔 ,轻则造成断枝 ,重则折干甚至枯死 ,严重影响树木的正常生长和自然景观。感器是昆虫感受外界信息的接收器 ,是在昆虫感觉器官 (如触角 )上的一个特化区域 ,由毛原细胞、感觉神经细胞所形成的一种表皮特化的薄壁构造。为了探索利用信息素防治的新途径 ,对该虫的主要感觉器官———触角、下唇须、下颚须表面的感器类型进行扫描观察 ,以期通过对感器微观…     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its