具有更宽安全工作区的IGBT元胞的研究与设计

研究了一种新的IGBT发射极元胞,并给出其设计方法.该元胞在不影响单位面积有效沟道宽度的情况下,将源衬底的P+区与源N+区并排垂直于沟道一侧放置,以缩短空穴路径.与采用深P+注入抗闩锁的传统方法相比,经过优化设计的新结构的闩锁电流增大了约8倍;在Vce为1.5 V时,单位面积电流密度增加3倍;元胞静态阻断电压也有20%的增加,从而扩展了IGBT的安全工作区,而且工艺更简单.     

深槽对0.35 μm CMOS管抗闩锁性能的影响研究

相比于P+衬底CMOS工艺,P-衬底0.35 μm BiCMOS工艺中CMOS管的抗闩锁性能更差。为了提高CMOS管的抗闩锁性能,利用光触发方式,基于Medici器件,仿真研究了BiCMOS工艺中深槽对CMOS管闩锁性能的影响。结果表明,深槽可以提高CMOS管的抗闩锁性能。在光触发脉冲宽度为50 ns,深槽深度为3、5、7 μm时,深槽BiCMOS工艺中CMOS管的闩锁触发电流分别是无深槽BiCMOS工艺中CMOS管的3.13,6.88,11.12倍。     

CMOS IC抗闩锁能力的提高及闩锁能力的恒定

本文提出CMOS IC闩锁模式,较为详细地讨论了出现闩锁现象的整个过程,并以此提出改进方法以及如何恒定CMOS IC的抗闩锁能力,其结论为:注入电流在30～50mA以上时,CMOS电路一般不会出现闩锁现象.     

紫外光改性银阳极对绿光OLED器件性能的影响

为提升OLED器件(结构为Ag/NPB/Alq3/LiF/Al)的性能,采用紫外光(UV)对银(Ag)阳极进行改性,探究阳极改性对器件性能的影响.研究结果表明:UV改性Ag阳极的时长为50 s时,器件性能最佳,启亮电压从20 V降低到6V,最大亮度从101.6 cd/m2提高到5 609.2 cd/m2,电流效率得到很大提升,且改性前后其发光峰的位置没有改变.UV改性使Ag阳极表面氧化生成氧化物,该氧化物薄层可作为空穴注入层,能够有效提高界面功函数,大大降低空穴注入势垒,提高了载流子注入能力,使绿光OLED器件的发光性能得到改善.这种利用UV改性Ag阳极的方法工艺简单,能有效降低空穴注入势垒,对提高该类柔性OLED器件的性能具有一定应用价值.     

一种高维持电压的新型闩锁免疫双向可控硅

传统DDSCR器件过低的维持电压容易造成闩锁效应。提出了一种新型DDSCR,在传统器件阳极与阴极之间加入了浮空高掺杂的N+与P+有源区,通过P+有源区复合阱内的电子,N+有源区将电流通过器件深处电阻较低SCR路径泄放的方式来解决传统器件维持电压过低的问题,提高器件抗闩锁能力。基于TCAD的仿真结果表明,与传统DDSCR相比,新型器件的维持电压从2.9 V提高到10.5 V,通过拉长关键尺寸D7,可将器件维持电压进一步提高到13.7 V。该器件适用于I/O端口存在正负两种电压的芯片防护。     

空穴注入控制型横向绝缘栅双极晶体管

提出了空穴注入控制型横向绝缘栅双极晶体管（ＣＩ－ＬＩＧＢＴ）,它可以有效地控制高压下阳极区穴穴注入,提高器件的闭锁电压。通过对阳极区反偏ｐ＾＋ｎ＾＋结 穿电压ＢＶＺ、取样电阻ＲＡ和阳极区结深的优化,提高了ＣＩ－ＬＩＧＢＴ的抗闭锁能力,降低了其导通压卫,并获得了初步实验结果。     

SOI LIGBT抗闩锁效应的研究与进展

概述了绝缘层上硅横向绝缘栅双极晶体管(SOI LIGBT)抗闩锁结构的改进历程,介绍了从早期改进的p阱深p+欧姆接触SOI LIGBT结构到后来的中间阴极SOI LIGBT、埋栅SOILIGBT、双沟道SOI LIGBT、槽栅阳极短路射频SOI LIGBT等改进结构;阐述了一些结构在抗闩锁方面的改善情况,总结指出抑制闩锁效应发生的根本出发点是通过降低p基区电阻的阻值或减小流过p基区电阻的电流来削弱或者切断寄生双极晶体管之间的正反馈耦合。     

以ZnO为空穴缓冲层的高效率有机电致发光器件

研制了在传统双层有机电致发光器件(OLED) ITO/NPB/AlQ/Al的阳极与空穴传输层间加入ZnO缓冲层的新型器件.研究了加入缓冲层后对OLED性能的影响,并比较了新型与传统OLED的性能,结果表明,新型器件比传统器件的耐压能力有了显著提高;当电压达到7 V时,发光效率提高了35%.分析认为,ZnO缓冲层的加入,改善了界面, 减少了漏电流,并且阻碍了空穴的注入,有利于改善空穴和电子的注入平衡,提高复合效率.     

不同γ脉冲宽度下CMOS电路闩锁阈值的数值模拟

采用MEDICI软件,用电流注入和X射线辐照两种方法,对瞬态辐照引起的CMOS电路的闩锁特性进行模拟,研究了闩锁阈值与脉冲宽度的关系;将计算结果与实验测量结果进行比较,结果表明:随着脉冲宽度的增加,辐射损伤的剂量率阈值随之降低,而辐射损伤的总剂量阈值随之增加,CMOS电路的剂量率闩锁阈值与脉冲宽度的倒数成正比.     

提高CMOS电路抗闩锁能力的阱源结构设计

提出了一种较好的抗闩锁CMOS结构——阶源结构.对阶源结构和常规结构的CMOS反相器进行了电触发闩锁特性和激光器辐照实验研究,就实验结果进行了分析讨论.     

A new high-performance lateral insulated gate bipolar transistorformed on Quasi-SOI

In the proposed LIGBT/Quasi-SOI, the buried oxide layer of the Quasi-SOI is partially removed at the bottom of the channel region and this channel region is directly connected to the low-resistivity p-type substrate. This structure significantly reduces the base resistance of the parasitic npn-bipolar transistor and significantly increases its latch up current. Simulation of the electrical characteristics of the proposed LIGBT/Quasi-SOI showed that, at a substrate resistivity of 20 mΩ·cm, latch up free operation can be obtained     

A new gradual hole injection dual-gate LIGBT

A new shorted-anode lateral insulated gate bipolar transistor (SA-LIGBT), entitled gradual hole injection dual gate LIGBT (GHI-LIGBT), is proposed and fabricated. The new device employs a dual gate and p⁺ injector in order to initiate the hole injection gradually from the anode electrode into the drift region so that the negative differential resistance (NDR) regime may be eliminated. The experimental results show that the NDR regime, which may cause undesirable device characteristics, is completely eliminated in the GHI-LIGBT, and the forward voltage drop is reduced by 1 V at the current density of 200 A/cm² in comparison with the conventional SA-LIGBT     

The influence of an LIGBT on CMOS latch up in power integrated circuit

The latch up characteristics of a CMOS adjacent to a high voltage lateral insulated gate bipolar transistor (LIGBT) have been experimentally investigated. While it has been found that the holding voltage and holding current of the CMOS do not strongly depend on the power device operation, the triggering voltage has been found to be critical to the power device operation.<>     

低能量He离子注入局域寿命控制LIGBT的实验研究

提出了一种采用低能量大剂量He离子注入局域寿命控制的高速LIGBT,并对其进行了实验研究.粒子辐照实验结果显示与常规的LIGBT相比较,该器件的关断时间和正向压降的折中关系得到了改善.同时研究了当局域寿命控制区位于p+-n结附近,甚至在p+阳极内时,该器件的正向压降和关断时间.结果显示当局域寿命控制区在p+阳极内时,仍然对关断时间和正向压降有影响.     

Lateral insulated-gate bipolar transistor (LIGBT) with a segmentedanode structure

A novel lateral insulated-gate bipolar transistor (LIGBT) structure, called the segmented anode LIGBT, is presented. In this structure, the anode, which is responsible for the injection of minority carriers for conductivity modulation, is implemented using segments of p ⁺ and n⁺ diffusions along the device width. This segmented design of the anode structure results in higher switching speed and reduction in device size. Depending on the value of the specific ON resistance, experimental results show that the segmented anode LIGBT has from 20% to 250% reduction in turn-off time as compared to the shorted anode LIGBT     

Conductivity modulation enhanced lateral IGBT with SiO2 shielded layer anode by SIMOX technology on SOI substrate

A new lateral insulated-gate bipolar transistor (LIGBT) with a SiO2 shielded layer anode on SOI substrate is proposed and discussed.Compared to the conventional LIGBT,the proposed device offers an enhanced conductivity modulation effect due to the SiO2 shielded layer anode structure which can be formed by SIMOX technology.Simulation results show that,for the proposed LIGBT,during the conducting state,the electron-hole plasma concentrations in the n-drift region are several times larger than those of the conventional LIGBT; the conducting current is up to 37% larger than that of the conventional one.The enhanced conductivity modulation effect by SiO2 shielded layer anode does not sacrifice other characteristics of the device,such as breakdown and switching,but is compatible with other optimized technologies.     

一种具有载流子存储层的500 V高速SOI-LIGBT

为了改善LIGBT的关断特性,已有一种采用PMOS管来控制LIGBT阳极空穴注入的方法。在此基础上,提出了一种具有载流子存储效应的高速SOI-LIGBT结构。采用二维仿真软件MEDICI,对器件P-top区的剂量、载流子存储层的长度、掺杂浓度等参数进行优化设计。结果表明,SOI-LIGBT的击穿电压为553 V,正向压降为1.73 V。关断时,引入的PMOS管可以阻止LIGBT阳极向漂移区注入空穴,使器件的关断时间下降到13 ns,相比传统结构下降了87.6%。     

Novel lateral IGBT with n-region controlled anode on SOI substrate

A new lateral insulated-gate bipolar transistor (LIGBT) structure on SOI substrate, called an n-region controlled anode LIGBT (NCA-LIGBT), is proposed and discussed. The n-region controlled anode concept results in fast switch speeds, efficient area usage and effective suppression NDR in forward I-V characteristics. Simulation results of the key parameters (n-region doping concentration, length, thickness and p-base doping concentration) show that the NCA-LIGBT has a good tradeoff between turn-off time and on-state voltage drop. The proposed LIGBT is a novel device for power ICs such as PDP scan driver ICs.     

Analysis and characterization of the segmented anode LIGBT

A LIGBT (lateral insulated gate bipolar transistor) structure, called the segmented-anode LIGBT, is presented and analyzed. The anode structure responsible for the injection of minority carriers for conductivity modulation is implemented using segments of p⁺ and n⁺ diffusion along the device width. This minimizes the forward bias of the p⁺ injector during device turn-off, resulting in higher switching speed compared to the shorted-anode LIGBT. Since the n⁺ region required for electron extraction is implemented along the device width and consumes only a small amount of area, a reduction in device size is also achieved. The switching speed and reduced device size result in better tradeoff between on-resistance and turn-off time compared with other LIGBTs. Two-dimensional numerical simulations are carried out to demonstrate the operation and characteristics of the structure, and the experimental inductive and resistive switching characteristics of the structure are discussed