A 980 nm pseudomorphic single quantum well laser for pumpingerbium-doped optical fiber amplifiers

The authors have fabricated ridge waveguide pseudomorphic InGaAs/GaAs/AlGaAs GRIN-SCH SQW (graded-index separate-confinement-heterostructure single-quantum-well) lasers, emitting at 980 nm, with a maximum output power of 240 mW from one facet and a 22% coupling efficiency into as 1.55-μm single-mode optical fiber. These lasers satisfy the requirements on efficient and compact pump sources for Er³⁺-doped fiber amplifiers     

High-power operation of a ridge-waveguide AlGaAs/GaAs distributed feedback laser

We report high-power continuous-wave operation of a ridge-waveguide AlGaAs/GaAs distributed feedback laser as high as 40 mW. It was realised by an appropriate design of a ridge structure and by facet coatings.     

High-gain superfluorescent neodymium-doped single-mode fiber source

High-brightness, low-coherence sources are required in a number of optical sensor applications, particularly the fiber-optic gyro. An efficient superfluorescent, neodymium-doped phosphate glass fiber source has been developed which fulfils this requirement. The fiber shows a high-gain efficiency at 1.053 μm of 1 dB/mW pump power and this permits pumping with an 810 nm single-stripe AlGaAs laser diode to obtain >5 mW CW output power at a wavelength of 1.053 μm for only 45 mW of pump power     

空间生长GaAs单晶做衬底的GaAs/AlGaAs DH激光器

我们首次用在中国返地卫星上生长的Si-GaAs单晶做衬底,成功地研制出室温CW工作的GaAs/AlGaAs质子轰击条形DH激光器,DH外延片是用LPE法生长的。激光器的最低阈电流20mA,激射波长857nm,输出功率可达30mW。     

Nonlinear frequency conversion in a double vertical-cavity surface-emitting laser

Optical characteristics of a double vertical-cavity surface-emitting laser using the lattice nonlinearity of a GaAs/AlGaAs structure for emission in the mid-IR region are analyzed in detail. The conditions for continuous-wave lasing with a power of ∼0.1 mW at 13 μm at a pump current density of 5 kA/cm² are determined. __________ Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 38, No. 11, 2004, pp. 1392–1398. Original Russian Text Copyright ? 2004 by Morozov, Nefedov, Aleshkin.     

OC-48 capable InGaAsN vertical cavity lasers

A selectively oxidised InGaAsN/GaAs three quantum well vertical cavity laser (VCSEL) demonstrated continuous wave (CW) lasing with a single-mode output power of 0.749 mW at 1266 nm. This is the first reported InGaAsN VCSEL capable of meeting the power and wavelength requirements for both OC-48 SR and OC-48 IR-1 compliant links. The VCSEL uses two low absorption n-type GaAs/AlGaAs distributed Brag reflectors and a tunnel junction to achieve current injection into the active region. A multimode version of the VCSEL had a output power of 1.43 mW at 1.26 μm. CW lasing continued up to temperatures as high as 107°C. The VCSEL material was grown by solid source molecular beam epitaxy with an RF nitrogen plasma source     

Operation of diode laser pumped Tm3+ ZBLAN upconversionfiber laser at 482 nm

Lasing at 482 nm is observed in Tm³⁺-doped ZBLAN glass fiber pumped with single-mode InP semiconductor diode lasers. Up to 5 mW of 482 nm light is obtained with <40 mW of absorbed pump power from a single 1135 nm pump diode laser. The optimum pump wavelength is measured to be 1135-1340 nm. More efficient laser operation is observed in fiber with 2500 ppm Tm³⁺ compared to 1000 ppm Tm³⁺ because of the reduced length of the fiber laser cavity possible with increased doping. Improved slope efficiencies are also demonstrated when the fiber laser is co-pumped with up to 5 mW from a 1220 nm diode laser. The relative intensity noise (RIN) of the fiber laser displays a maximum of -90 dB/Hz at relaxation oscillation frequencies of a few tens of kHz. The measurement of RIN is limited by shot-noise of -152 dB/Hz above 2 MHz. At higher frequencies, self mode-locking was observed in the fiber laser, which may indicate the existence of saturable absorbers in the fiber core. The presence of such bleachable absorbers is indicated by the observed increase in threshold after upconversion lasing at 482 mm     

Near-IR dye laser for diode-pumped operation

A dye laser pumped by AlGaInP laser diodes produced efficient, low threshold operation at wavelengths between 740 and 800 nm. Rhodamine 700, oxazine 750, DOTCI and oxazine 1 dyes were demonstrated. Optical conversion efficiencies approaching 50% and output power as high as 361 mW were obtained when pumping with a DCM-based dye laser. Parametric variations of the pump power and wavelength were performed over the range of 615 nm to 690 nm to provide a more complete characterization of the dye laser     

Improving performance of AlGaAs/GaAs monolithic laser/FET by GRIN-SCH quantum-well laser

An AlGaAs/GaAs graded-index-waveguide separate-confinement-heterostructure (GRIN-SCH) single-quantum-well (SQW) laser has been monolithically integrated with a couple of field-effect-transistor drivers on a semi-insulating GaAs substrate. The adoption of the GRIN-SCH SQW laser has enabled an improvement in the laser/FET performance, exhibiting a low laser threshold current (12 mA) and a high sensitivity of the output light power to the input gate voltage (7.5 mW/facet/V).     

High-power 783 nm distributed-feedback laser

A ridge-waveguide GaAsP/AlGaAs laser, emitting an optical power of up to 200 mW in a single lateral and longitudinal mode at a wavelength of 783 nm, is presented. The distributed feedback is provided by a second-order grating, formed into an InGaP/GaAsP/InGaP multilayer structure. The laser is well suited as a light source for Raman spectroscopy.     

Ultrashort laser: Lasing in MBE GaAs layer with perpendicular-to-film optical excitation and emission

Lasing was observed in a 4.5 μm thick GaAs MBE-grown heterostructure (0.2 μm Al0.42Ga0.58As, 4.1 μm GaAs, 0.21 μm AlGaAs). The laser was driven by pulses from a mode-locked Ar laser (514.5 nm) with a maximum of 20 W peak power in 100 ps long pulses focused to 25 μm. The lasing occured along the pump axis within a cavity defined by the coated AlGaAs surfaces.     

High-power InAlGaAs/GaAs and AlGaAs/GaAs semiconductor laser arrays emitting at 808 nm

Molecular beam epitaxy (MBE) growth, device fabrication, and reliable operation of high-power InAlGaAs/GaAs and GaAlAs/GaAs laser arrays are described. Both InAlGaAs/GaAs and AlGaAs/GaAs laser arrays reached maximum continuous wave output powers of 40 W at room temperature. The external quantum efficiency was 50% and 45% for the InAlGaAs/GaAs and AlGaAs/GaAs laser arrays, respectively. Threshold current density for InAlGaAs/GaAs and AlGaAs/GaAs lasers was 303 A/cm/sup 2/ and 379 A/cm/sup 2/, respectively. While the current of AlGaAs laser arrays went up significantly after 1000 h of operation at a constant power of 40 W, InAlGaAs laser arrays had an increase in the injection current of less than 4% after 3000 h at 40 W.     

GaAs/AlGaAs grating surface-emitting diode lasers on Si substrates

A monolithic grating surface-emitting, GaAs/AlGaAs, separate-confinement-heterostructure, single-quantum-well diode laser has been fabricated on a Si substrate using a single-step metalorganic chemical vapour deposition process. An output power of 30 mW has been obtained under pulsed operation with a peak emission wavelength of 885 nm.<>     

垂直外腔面发射半导体激光器的热管理方法研究

垂直外腔面发射半导体激光器在高功率运转的同时可以保持良好的光束质量,近年来一直成为研究的热点。本文介绍了垂直外腔面发射半导体激光器的结构及运行原理。由于热管理是其高功率运行的主要限制因素之一,分析了垂直外腔面发射半导体激光器的热管理方法。使用反向生长的外延片通过化学湿法腐蚀去掉砷化镓衬底,得到了约6μm左右的外延片,最后利用808nm的泵浦光进行抽运获得了200mW的连续激光输出。     

LD泵浦和频593 nm黄光激光器

报道了一种单LD泵浦Nd:YVO4双晶体腔内和频实现黄光激光的有效方法,并对其进行了理论分析、实验装置的设计和实验验证。该装置由半导体激光器、光学耦合系统(CO)、Nd:YVO4镀膜晶体、镀高反膜的平凹镜、镀增透膜的LBO、镀高透膜的全反镜组成。实验采用V型谐振腔,在中心波长为808.7 nm、5 W抽运功率下,利用Ⅰ类临界相位匹配LBO作为和频晶体,获得了244 mW、593 nm的黄光输出,光-光转换率为4.9%,激光不稳定度为5%。实验结果表明:采用V型谐振腔进行腔内和频,可以获得593 nm的黄光激光,并且结构紧凑、转换效率高,可以应用到很多种和频激光器中。     

High-performance integrated erbium/sup +3/-ytterbium/sup +3/ codoped glass waveguide laser

We report the design and characterization of an efficient erbium/sup +3/-ytterbium/sup +3/ codoped ion exchanged glass distributed Bragg reflector (DBR) laser pumped by a 980-nm pigtailed laser source. Laser oscillation at 1536 nm is demonstrated with a pump threshold of 35 mW and a slope efficiency of 10.6%. The dependence of lasing performance on pump wavelength detuning is examined for different cavity designs.     

Operation of erbium-doped fiber amplifiers and lasers pumped withfrequency-doubled Nd:YAG lasers

An optical amplifier consisting of an erbium-doped germanosilicate fiber optically pumped at 532 nm is described. Negligible excited-state absorption at 532 nm allows efficient pumping, enabling a gain of 34 dB at 1536 nm to be obtained for only 25 mW of pump power. The pulsed pump source produces negligible noise on the small signal if the pump repetition rate is above 10 kHz. Pulsed laser operation is achieved by pumping a Fabry-Perot erbium-doped fiber laser with a frequency-doubled Q-switched Nd:YAG laser. Pulses of 0.9-W peak power and 280-ns duration at 1.538-μm were obtained     

Picosecond pulses (2 ps) from hybrid mode-locked AlGaAs QW lasers with integrated active waveguide cavities

Single ultrashort optical pulses (2 ps with 17.6 GHz repetition rate) have been generated with hybrid mode-locked monolithic GaAs/AlGaAs lasers at lambda =856 nm. Instead of an external cavity, long active waveguides were used as resonators with a roundtrip frequency of 5.9 GHz. Increasing the pump current in the waveguide far above transparency led to 10 ps pulses with a high peak power of 110 mW.<>     

+21 dBm erbium power amplifier pumped by a diode-pumped Nd:YAGlaser

Efficient energy transfer has been demonstrated in an Er/Yb codoped phosphorus-doped silica fiber for the first time. This has indirectly allowed the use of reliable, high-power AlGaAs diode laser arrays as the semiconductor pump source through the use of a diode-pumped Nd:YAG laser (DPL) operating at 1064 nm. Small signal gains of 42 dB and output powers of 71 mW (+18.5 dBm) have been observed with a single DPL. Bidirectional pumping with two DPLs has yielded an output power of 130 mW (+21 dBm)     

High-power and highly reliable 780 nm band AlGaAs laser diodes withrectangular ridge structure

A record light output power of 240 mW has been achieved for the 780 nm band AlGaAs laser diodes by using a rectangular ridge structure. The laser diodes have been operated for >1000 h at 60°C under 150 mW pulsed operation