一种可吸收垂直入射光的管状量子阱红外探测器

基于传统的光刻和化学湿法腐蚀工艺,通过卷曲技术,提出一种三维管状量子阱红外探测器.该管状器件相比于未卷曲的平面器件,在垂直入射光照下,展现了优良的暗电流、黑体响应和光电流响应率特性曲线.当工作温度60 K、偏置电压0.45 V时,管状器件峰值响应率为20.6 mA/W,峰值波长3.62μm,最大量子效率2.3%.从几何光学的角度分析了管状器件的垂直光吸收原理,进而揭示了一种特殊的光耦合方式.测试了不同角度入射光照射下的光电流响应率谱.由于微管的近似圆形对称性,器件具有很宽的视角,有助于红外探测系统的设计.     

三维掩膜硅各向异性腐蚀工艺释放微悬空结构

提出了一种新颖的基于三维掩膜的硅各向异性腐蚀工艺,即利用深反应离子刻蚀、湿法腐蚀等常规体硅刻蚀工艺和氧化、化学气相沉积(CVD)等薄膜工艺制作出具有三维结构的氧化硅(SiO2)或氮化硅(Si3N4)薄膜,以该三维薄膜作为掩膜进行各向异性腐蚀,该工艺可以应用于MEMS微悬空结构的制作。利用该工艺成功地在单片n-Si(100)衬底上完成了一种十字梁结构的释放,并对腐蚀的过程和工艺参数进行了研究。     

MEMS器件牺牲层腐蚀释放技术研究

以非制冷红外焦平面阵列和热剪切应力传感器为代表,分析了这两种典型的薄膜悬浮结构和带空腔结构的MEMS器件在进行二氧化硅牺牲层的腐蚀和最终结构释放过程中的各种问题。根据二氧化硅的腐蚀机理,指导了对腐蚀孔(槽)的设计,通过测量不同条件下的腐蚀速度,得出升温、超声、适时更换腐蚀液是加快腐蚀速度的方法,基于粘连现象中拉起长度的概念,提出基于硅衬底下突点制作及释放牺牲层的方法,并获得了成功释放。     

掺杂浓度对多晶硅纳米薄膜应变系数的影响

为有效利用多晶硅纳米薄膜研制MEMS压阻器件,本文对LPCVD多晶硅纳米薄膜应变系数与掺硼浓度的关系进行了研究,并利用扫描电镜和X射线衍射实验分析了薄膜的结构特点.结果表明:在重掺杂情况下,纳米薄膜的应变系数明显大于相同掺杂浓度下单晶硅的应变系数,而且掺杂浓度在2.5×1020cm-3左右时,应变系数具有随掺杂浓度升高而增大的趋势.对这种实验结果依据隧道效应原理进行了理论解释,提出了多晶硅压阻特性的修正模型.     

掺杂浓度对多晶硅纳米薄膜应变系数的影响

为有效利用多晶硅纳米薄膜研制MEMS压阻器件,本文对LPCVD多晶硅纳米薄膜应变系数与掺硼浓度的关系进行了研究,并利用扫描电镜和X射线衍射实验分析了薄膜的结构特点.结果表明:在重掺杂情况下,纳米薄膜的应变系数明显大于相同掺杂浓度下单晶硅的应变系数,而且掺杂浓度在2.5×1020cm-3左右时,应变系数具有随掺杂浓度升高而增大的趋势.对这种实验结果依据隧道效应原理进行了理论解释,提出了多晶硅压阻特性的修正模型.     

卷曲量子阱红外探测器应力变化及对探测性能的影响

研究了卷曲量子阱红外探测器的应力状态变化及对光电性能的影响,发现拉应力使导带能级上移,压应力则使其下移,且双量子阱结构的卷曲薄膜的能带移动取决于两个量子阱的合应力变化;卷管薄膜可以有效将应力变化转变为应变,从而减小环境温度变化对能带移动的影响,提高红外器件温度稳定性;褶皱薄膜相比于卷管薄膜的量子阱具有较大的压应力,导致其光响应率较低;相同外加偏压下,卷管器件比褶皱器件的电压响应率提高约2.5倍。     

基于胶体球掩模板法制备图形化蓝宝石衬底

制备并研究了纳米级图形化蓝宝石衬底.采用磁控溅射技术在蓝宝石衬底上沉积 SiO2薄膜,利用自组装方法在SiO2薄膜上制备单层聚苯乙烯(PS)胶体球阵列,利用感应耦合等离子体干法刻蚀将周期性PS胶体球的图形转移到SiO2薄膜上,通过湿法腐蚀制备了纳米级图形化蓝宝石衬底.利用扫描电子显微镜对胶体球掩膜、SiO2纳米柱掩膜和图形化蓝宝石衬底结构进行了观察,研究了湿法腐蚀蓝宝石衬底的中间产物对刻蚀的影响,分析了腐蚀温度和腐蚀时间对蓝宝石衬底的影响.结果表明,湿法腐蚀的中间产物会降低蓝宝石衬底的刻蚀速率.蓝宝石衬底的腐蚀速率随着腐蚀温度的升高而加快;在同一腐蚀温度下,随着腐蚀时间的增加,图形尺寸进一步减小.     

单晶纳米硅薄膜的制备及其场发射特性

用小电流、特殊配比溶液的电化学阳极腐蚀法在p型、〈100〉晶向、0.01Ω·cm电阻率的硅片制备了大面积纳米硅薄膜.通过SEM,TEM,XRD和Raman光谱技术分析薄膜颗粒的微细结构.实验结果表明该纳米硅薄膜由直径为10～20nm,晶向一致的颗粒紧密排列而成,具有很好的物理化学稳定性.系统研究了薄膜结构特征和溶液配比、腐蚀时间、腐蚀电流密度的关系.成功观察到该薄膜具有很好的场发射特性,在0.1μA/cm2电流密度下,其开启电场为3V/μm,接近碳纳米管的1.1V/μm.     

单晶纳米硅薄膜的制备及其场发射特性

用小电流、特殊配比溶液的电化学阳极腐蚀法在p型、〈100〉晶向、0.01Ω·cm电阻率的硅片制备了大面积纳米硅薄膜.通过SEM,TEM,XRD和Raman光谱技术分析薄膜颗粒的微细结构.实验结果表明该纳米硅薄膜由直径为10～20nm,晶向一致的颗粒紧密排列而成,具有很好的物理化学稳定性.系统研究了薄膜结构特征和溶液配比、腐蚀时间、腐蚀电流密度的关系.成功观察到该薄膜具有很好的场发射特性,在0.1μA/cm2电流密度下,其开启电场为3V/μm,接近碳纳米管的1.1V/μm.     

Au/SiO_2纳米复合膜的形貌及发光特性

采用磁控溅射和退火法在Si(111)衬底上制备Au/SiO2纳米复合薄膜,并在两种实验模式下进行退火处理。模式A:不同的退火温度,退火20min;模式B:退火温度1 000℃,不同的退火时间。用扫描电子显微镜(SEM)、X射线衍射方法(XRD)和光致发光(PL)等测试手段对退火后的Au/SiO2纳米复合薄膜的表面形貌、微观结构和发光特性进行了分析。SEM结果表明,在模式A情况下,随着温度的增加,Au纳米颗粒的大小先增加后减小,这与XRD测试结果相吻合。PL结果表明,在模式B情况下,随着退火时间的增加,发光峰强度先增加后减小。在325nm波长下激发,440nm的发光峰与Au颗粒的大小和数量有关,而523nm的发光峰与纳米复合膜的结构有关,这与SEM平面图相吻合。实验结果表明,Au/SiO2纳米复合薄膜的表面形貌、微观结构和发光特性与退火温度及退火时间有很强的依赖关系。     

The Fabrication,Fluorescence Dynamics,and Whispering Gallery Modes of Aluminosilicate Microtube Resonators

In this paper a novel technique for the production of aluminosilicate microtubes, which are shown to act as optical cylindrical microresonators, is described. The free‐standing microtubes are fabricated by using vacuum‐assisted wetting and filtration of silica gel through a microchannel glass matrix. The microtubes are studied using scanning electron microscopy, micro‐photoluminescence spectroscopy, and fluorescence lifetime imaging confocal microscopy. In the emission spectra of the microresonators we find very narrow periodic peaks corresponding to the whispering gallery modes of two orthogonal polarizations with quality factors up to 3200. A strong enhancement in photoluminescence decay rates at high excitation power demonstrates the occurrence of amplified spontaneous emission from a single microtube. These microtubes show a large evanescent field extending many micrometers beyond the tube radius. Applications for these novel microresonators will be in the areas of microlasers and microsensors and quantum information processing.     

热处理对ZnO六棱微管结构及发光特性的影响(英文)

采用水热法在p-Si(111)衬底上生长出六棱ZnO微管,在空气中进行了300～600℃不同温度的热处理,并用XRD、XPS、PL谱研究了热处理对ZnO微管的结构、发光性能的影响。结果表明经过热处理后,ZnO微管的晶体质量显著改善。室温下的光致发光测试显示,在可见发射几乎消失的情况下,近带边发射的强度显著增大。与原位生长的ZnO微管相比,在泵浦密度为28kW/cm2时,热处理400℃的样品在近紫外区产生一个新的发射峰P。通过验证发射峰A与P之间的相对能量位置,认为新发射峰P可能是由激子-激子碰撞引起的。     

Fabrication of porous ZnO via electrochemical etching using 10 wt% potassium hydroxide solution

We described the fabrication of porous ZnO using the electrochemical etching method. ZnO thin films deposited by radiofrequency sputtering were etched electrochemically using 10 wt% KOH solution as an etching medium to obtain porous ZnO surface structure. A constant voltage of 15 V was applied to enhance the etching process. The etched samples were then characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and photoluminescence (PL) spectroscopy to examine their structural and optical properties. XRD spectra showed that by performing the electrochemical etching process, porous ZnO could be obtained without severely deteriorating the crystallinity of the samples. Moreover, SEM characterization revealed that hillock-type porous ZnO was fabricated successfully. In addition, the cross-sectional SEM images revealed that there were only minimal changes in the layer thickness after the ZnO had been etched for various lengths of time. This finding shows the dominance of the vertical etching process. Notably, the intensity of PL spectra increased and the PL excitation peak exhibited a red shift trend as the etching time increased. These observations are due to the increase of the surface to volume ratio of the ZnO surface and the strain relaxation along the dislocation and grain boundary.     

含缺陷碳纳米管的力学性质研究

本文采用全电子密度泛函理论，研究了带有不同拓扑缺陷的碳纳米管在单轴拉伸下的力学性质。计算结果表明：带有7元环和8元环拓扑缺陷的碳纳米管力学性质很接近。两端施加给定轴向应变，二者的能量曲线几乎都在应变约为6．5％时与完好管的能量曲线相交。这表明在拉伸荷载作用下，触发8环和7环拓扑缺陷的临界应变几乎相同。但对于含有9元环拓扑缺陷的碳纳米管，在所考虑的拉伸范围内其能量远高于相应的完好管。这表明此种缺陷形式很难被拉伸加载方式所触发。     

Lateral polarity control of Ⅲ-nitride thin film and application in GaN Schottky barrier diode

N-polar and Ⅲ-polar GaN and AIN epitaxial thin films grown side by side on single sapphire substrate was reported.Surface morphology,wet etching susceptibility and bi-axial strain conditions were investigated and the polarity control scheme was utilized in the fabrication of Schottky barrier diode where ohmic contact and Schottky contact were deposited on N-polar domains and Ga-polar domains,respectively.The influence of N-polarity on on-state resistivity and I-V characteristic was discussed,demonstrating that lateral polarity structure of GaN and A1N can be widely used in new designs of optoelectronic and electronic devices.     

Mode characteristics of semiconductor equilateral triangle microcavities with side length of 5-20 /spl mu/m

Semiconductor equilateral triangle microresonators (ETRs) with side length of 5, 10, and 20 /spl mu/m are fabricated by the two-step inductively coupled plasma (ICP) etching technique. The mode properties of fabricated InGaAsP ETRs are investigated experimentally by photoluminescence (PL) with the pumping source of a 980-nm semiconductor laser and distinct peaks are observed in the measured PL spectra. The wavelength spacings of the distinct peaks agree very well with the theoretical longitudinal mode intervals of the fundamental transverse modes in the ETRs, which verifies that the distinct peaks are corresponding to the enhancement of resonant modes. The mode quality factors are calculated from the width of the resonant peaks of the PL spectra, which are about 100 for the ETR with side length of 20 /spl mu/m.     

Photoluminescent Arrays of Nanopatterned Monolayer MoS2

Monolayer 2D MoS₂ grown by chemical vapor deposition is nanopatterned into nanodots, nanorods, and hexagonal nanomesh using block copolymer (BCP) lithography. The detailed atomic structure and nanoscale geometry of the nanopatterned MoS₂ show features down to 4 nm with nonfaceted etching profiles defined by the BCP mask. Atomic resolution annular dark field scanning transmission electron microscopy reveals the nanopatterned MoS₂ has minimal large‐scale crystalline defects and enables the edge density to be measured for each nanoscale pattern geometry. Photoluminescence spectroscopy of nanodots, nanorods, and nanomesh areas shows strain‐dependent spectral shifts up to 15 nm, as well as reduction in the PL efficiency as the edge density increases. Raman spectroscopy shows mode stiffening, confirming the release of strain when it is nanopatterned by BCP lithography. These results show that small nanodots (≈19 nm) of MoS₂ 2D monolayers still exhibit strong direct band gap photoluminescence (PL), but have PL quenching compared to pristine material from the edge states. This information provides important insights into the structure–PL property correlations of sub‐20 nm MoS₂ structures that have potential in future applications of 2D electronics, optoelectronics, and photonics.     

Structure and properties of porous silicon obtained by photoanodization

The results of an investigation of layers of porous silicon (PS), which was obtained by electrochemical etching of p-Si under different illumination conditions — natural light, incandescent light, and light from a mercury lamp with and without a filter — are reported. The structure of the layers was studied by double-crystal x-ray diffractometry, the composition was monitored by means of the IR absorption spectra, and the radiative properties were monitored according to the photoluminescence (PL) spectra. It was established that electrochemical etching under illumination produces PS with a higher porosity and more intense PL whose maximum is shifted into the short-wavelength region. These changes are accompanied by a large disordering of the structure and an increase in the oxygen content in the layer. It is concluded that illumination accelerates the chemical interaction of PS with the electrolyte due to oxidation. High-porosity porous silicon stored in air exhibits quenching of PL. Conversely, PL is excited in layers with a lower porosity. Aging of PS is characterized by an increase in the microdeformation of the layers, a decrease in the crystallite sizes with a partial loss of coherence between the crystallites and the substrate, and an increase in the fraction of the amorphous phase. Fiz. Tekh. Poluprovodn. 31, 1261–1268 (October 1997)     

多孔硅PL谱的影响因素分析

通过阳极氧化电化学方法制备了多孔硅,并在室温下对不同条件下制得的多孔硅光致发光谱(PL谱)进行系统的分析.结果表明,随着阳极电流密度、阳极化溶液浓度和时间的增大,多孔硅的PL谱峰将发生"蓝移",并且PL峰强也显著增加,但过大的电流密度、阳极化溶液浓度和时间将导致PL峰强下降.另外,还发现PL谱存在多峰结构,而多孔硅在空气中放置时间的延长将引起其PL的短波峰"蓝移"和强度下降,但对长波峰只引起强度减弱,并不影响其峰位.PL谱的多峰结构可以认为是由于样品中同时存在"树枝"状和"海绵"状两种微观结构所产生的,在这个假设下,用多孔硅氧化后发光中心从硅表面移到二氧化硅层及量子限制模型能够解释上述现象.     

Application of Wet Chemical Etching in Fabrication Process of GaAs/AlGaAs Quantum Dot Arrays

Two types of GaAs/AlGaAs quantum dot arrays with different dot size are fabricated by dry etching and dry-wet etching. PL spectra of the quantum dot arrays at low temperature show the blue shifts due to the quantization confinement effects, and the blue-shift increases with the decrease of the dot size. It is also found that wet chemical etching can reduce the surface damage caused by high-energy ion etching and improve the optical characteristics of the quantum dot arrays.