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1.
用器件模拟的方法,设计了一种与常规CMOS 工艺兼容的硅高速光电探测器,该探测器可与CMOS接收机电路单片集成,对该探测器进行了器件模拟研究,给出了该探测器的电路模型.通过MOSIS(MOS implementation support project) 0.35μm COMS工艺制做了该探测器,实际测试了该器件的频率响应和波长响应,探测器频率响应在1GHz以上,峰值波长响应在0.69μm.  相似文献   

2.
设计了一种新型的与MS/RF CMOS工艺全兼容、带深n阱(DNW)、浅沟槽隔离(STI)的双光电探测器,分析了其工作机理,用器件模拟软件ATLAS对其暗电流、响应电流、光调制频率响应和波长响应进行了模拟。采用TSMC 0.18μm MS/RF CMOS工艺进行了流片,对芯片进行了暗电流和响应度的测试。模拟和测试结果均表明。该探测器与常规双光电探测器相比,具有较低的暗电流和较高的响应度。  相似文献   

3.
设计了与CMOS工艺兼容的光电单片接收机电路,其中包括光电探测器、前置放大器和主放大器.它采用0.6μm CMOS工艺,可在自备的高阻外延片上使用MPW(multi-project wafer)进行流水.其中光电探测器的工作波长为850nm,响应度为0.2A/W,接收灵敏度为-16dBm,带宽为800MHz,因此适用于VSR(very short reach)系统.前置放大器采用电流模反馈放大器,主放大器输出为LVDS(low voltage differential signals)电平.通过器件模拟与电路模拟统一的方法将光电探测器与接收机放大电路进行统一模拟,分析了电路的限制因素,并提出了相应的改进方法.  相似文献   

4.
标准CMOS工艺下Si光电探测器的模拟与设计   总被引:1,自引:0,他引:1  
卞剑涛  陈朝 《半导体光电》2006,27(2):128-132
设计了与标准CMOS工艺兼容的硅双光电探测器,并从理论上计算和分析了其绝对光谱响应.0.5μm CMOS工艺条件数值模拟结果显示,在无抗反射膜情况下该探测器在400~900nm波长范围内响应度都在0.2A/W以上,尤其是在短波长处效果比一般的探测器要好.还就反向偏压以及CMOS工艺中介质与钝化层等因素对探测器响应度的影响进行了讨论.  相似文献   

5.
CMOS兼容光电单片接收机的模拟与设计   总被引:2,自引:0,他引:2  
设计了与CMOS工艺兼容的光电单片接收机电路,其中包括光电探测器、前置放大器和主放大器.它采用0 6μmCMOS工艺,可在自备的高阻外延片上使用MPW(multi project wafer)进行流水.其中光电探测器的工作波长为850nm ,响应度为0 2A/W ,接收灵敏度为- 1 6dBm ,带宽为80 0MHz ,因此适用于VSR(very short reach)系统.前置放大器采用电流模反馈放大器,主放大器输出为LVDS(low voltage differential signals)电平.通过器件模拟与电路模拟统一的方法将光电探测器与接收机放大电路进行统一模拟,分析了电路的限制因素,并提出了相应的改进方法.  相似文献   

6.
设计了一种与标准CMOS工艺完全兼容的高速光电探测器和宽带光电集成接收机,并采用0.6μm标准CMOS工艺流片. 测试结果表明,该光电集成接收机的性能已接近实用要求. 探测器的频率响应带宽为1.11GHz,光电集成接收机的3dB带宽为733MHz;在误码率为10-12条件下,对波长为850nm的输入光信号,灵敏度达到-9dBm.  相似文献   

7.
设计了一种与标准CMOS工艺完全兼容的高速光电探测器和宽带光电集成接收机,并采用0.6μm标准CMOS工艺流片. 测试结果表明,该光电集成接收机的性能已接近实用要求. 探测器的频率响应带宽为1.11GHz,光电集成接收机的3dB带宽为733MHz;在误码率为10-12条件下,对波长为850nm的输入光信号,灵敏度达到-9dBm.  相似文献   

8.
在Synopsys TCAD软件环境下,模拟实现了与0.5μm标准CMOS工艺兼容的高压CMOS器件,其中NMOS耐压达到108V,PMOS耐压达到-69V.在标准CMOS工艺的基础上添加三块掩膜版和五次离子注入即可完成高压CMOS器件,从而实现高、低压CMOS器件的集成.此高压兼容工艺适用于制作带高压接口的复杂信号处理电路.  相似文献   

9.
《红外》2001,(11):36-37
法国SOFRADIR公司最近推出一种基于非晶硅(a-Si)技术的非制冷微热辐射计红外探测器.该探测器包括一个间距为45μm、占空因子高于80%的320×240元红外焦平面列阵,其工作波长为7μm~14μm.与该非晶硅温度计相联的CMOS读出电路是一种标准的0.5 μm CMOS部件.它允许探测器以脉冲偏压模式工作,因而可以提高像元的热响应率并使红外焦平面列阵免受焦平面温度变化的影响.在30℃时,探测器的功耗低于200mW.  相似文献   

10.
硫化铅探测器具有短波红外高灵敏度、低俄歇噪声等优点,其中化学水浴法合成的硫化铅薄膜可与CMOS半导体工艺兼容,有利于实现低成本高性能的面阵探测器。然而,目前对化学水浴法合成硫化铅探测器的研究主要集中在较大尺寸的单元探测器。本文基于化学水浴法合成硫化铅薄膜,利用离子束刻蚀工艺,制备了10~200μm尺寸的硫化铅光电探测器,研究了器件光电性能随电阻、长宽比、线宽等参数的变化。结果表明,随着尺寸的减小,硫化铅光电探测器的响应度逐渐增加,在1550 nm短波红外光的照射下,10μm级器件的响应度达到了51.68 A/W,约为200μm级器件的123倍,且在可见光和2.7μm红外波长下也具有良好的宽波段光电响应。本文研究的微米尺寸探测器件可为硫化铅探测器研究提供一定的支撑。  相似文献   

11.
DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.  相似文献   

12.
The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.  相似文献   

13.
Today, micro-system technology and the development of new MEMS (Micro-Electro-Mechanical Systems) are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.  相似文献   

14.
The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.  相似文献   

15.
From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.  相似文献   

16.
This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel's.  相似文献   

17.
Waveguide multilayer optical card (WMOC) is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling & processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic (VB) language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.  相似文献   

18.
It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output(MIMO) communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.  相似文献   

19.
In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal (200) (2d = 0.4027 nm) is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line(w), the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line(x), the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines(y), the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line(z) in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line(q) in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution(λ/△ 2) is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.  相似文献   

20.
High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET > PDMAT > TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.  相似文献   

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