共查询到20条相似文献,搜索用时 251 毫秒
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本文总结了气体传感器中微加热器的材料、结构及热特性,列举了常见的几种微加热器,对Pt加热器和多晶Si加热器进行比较,并在此基础上简要介绍了传感器阵列中微加热器的制作及器阵列的气敏特性。 相似文献
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微小光学与异形孔径微透镜阵列研究 总被引:1,自引:1,他引:0
讨论了微小光学的发展和异形孔径(正方形和六角形)微透镜阵列的制作。自聚焦透镜的制作加速了微小光学的产生,微透镜阵列器件的应用,促使微小光学迅猛发展,异形孔径微透镜阵列的研制,开创了微小光学新的研究领域。重点对异形自聚焦透镜和异形孔径微透镜阵列的理论和实验研究工作进行讨论,给出了有益的结果。 相似文献
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介绍了一种基于标准硅工艺的微悬臂梁非致冷红外探测器的设计和制作.由于氮化硅和铝的热膨胀系数相差很大,用这两种材料的薄膜做成的双材料微悬臂梁在红外辐射下温度升高并发生弯曲,微悬臂梁和衬底形成一个可变电容,通过检测电容的变化来反映微悬臂梁的弯曲,从而可以探测红外辐射的情况.利用外部测试设备对单元探测器进行测试表明,该微悬臂梁对红外辐射有很高的响应. 相似文献
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介绍了一种基于标准硅工艺的电容读出式微悬臂梁非制冷红外探测器的设计、制作以及集成读出电路的设计。该探测器用于探测室温下物体的红外辐射,其响应波长为8~12 μm 。由于氮化硅和铝的热膨胀系数相差很大,用这两种材料的薄膜做成的双材料微悬臂梁在红外辐射下会发生弯曲,微悬臂梁和衬底形成一个可变电容,通过检测电容的变化来反映微悬臂梁的弯曲,从而可以探测红外辐射的情况。采用和探测器集成的CMOS读出电路对探测器信号进行读取,微悬臂梁的电容灵敏度可达2.5 fF/K,温度分辨率为0.1 K。 相似文献
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一种新型非致冷红外探测器 总被引:2,自引:0,他引:2
介绍一种基于标准硅工艺、采用电容读出方式微悬臂梁非制冷红外探测器的设计、制作及性能测试。用这两种热膨胀系数相差很大材料(氮化硅和铝)的薄膜做成的双材料微悬臂梁在红外辐射下,温度升高并发生弯曲。通过检测微悬臂梁和衬底形成的一个可变电容变化可以得知微悬臂梁的弯曲情况,从而可以探测红外辐射的信息。利用外部测试设备对单元探测器进行测试表明微悬臂梁对红外辐射有很高的响应。 相似文献
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An optical readout uncooled infrared (IR) imaging detector of bimaterial cantilever array using knife-edge filter operation (KEFO) is demonstrated. The angle change of each cantilever in a focal plane array (FPA) can be simultaneously detected with a resolution of 10-5 degree. A deformation magnifying substrate-free micro-cantilever unit with multi-fold interval metallized legs is specially designed and modeled. A FPA with 160×160 pixels is fabricated and thermal images with noise equivalent temperature difference (NETD) of 400 mK are obtained by this imaging detector. 相似文献
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The application of a mask-level butting technique to the design and fabrication of a very long, monolithic silicide infrared (IR) charge-coupled device (CCD) line array is described. This technique gives a continuous line of 896 IR sensing elements. The number of IR detectors (the length of the array) can be varied as required at the device dicing and packaging stages. The maximum array length is limited only by the silicon wafer size and the processing yield 相似文献
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S. Velicu T. S. Lee C. H. Grein P. Boieriu Y. P. Chen N. K. Dhar J. Dinan D. Lianos 《Journal of Electronic Materials》2005,34(6):820-831
The cost and performance of hybrid HgCdTe infrared (IR) focal plane arrays are constrained by the necessity of fabricating
the detector arrays on a CdZnTe substrate. These substrates are expensive, fragile, available only in small rectangular formats,
and are not a good thermal expansion match to the silicon readout integrated circuit. We discuss in this paper an IR sensor
technology based on monolithically integrated IR focal plane arrays that could replace the conventional hybrid focal plane
array technology. We have investigated the critical issues related to the growth of HgCdTe on Si read-out integrated circuits
and the fabrication of monolithic focal plane arrays: (1) the design of Si read-out integrated circuits and focal plane array
layouts; (2) the low-temperature cleaning of Si(001) wafers; (3) the growth of CdTe and HgCdTe layers on read-out integrated
circuits; (4) diode creation, delineation, electrical, and interconnection; and (4) demonstration of high yield photovoltaic
operation without limitation from earlier preprocessing such as substrate cleaning, molecular beam epitaxy (MBE) growth, and
device fabrication. Crystallographic, optical, and electrical properties of the grown layers will be presented. Electrical
properties for diodes fabricated on misoriented Si and readout integrated circuit (ROIC) substrates will be discussed. The
fabrication of arrays with demonstrated I–V properties show that monolithic integration of HgCdTe-based IR focal plane arrays
on Si read-out integrated circuits is feasible and could be implemented in the third generation of IR systems. 相似文献
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Changhong Chen Xinjian Yi Jing Zhang Bifeng Xiong 《Journal of Infrared, Millimeter and Terahertz Waves》2001,22(1):53-58
Mixed vanadium oxide thin films, as VO2 for the main composition are materials for uncooled microbolometer due to their high temperature coefficient of resistance (TCR) at room temperature. This paper describes the design and fabrication of 8-element linear array IR uncooled microbolometers using the films and micromachining technology. The characteristics of the array is investigated in the spectral region of 8–12 μm. The fabricated detectors exhibit responsivity of up to 10 KV/W, typical detectivity of 1.89×108 cmHz1/2/W, and thermal time constant of 11 ms, at 296 K and at a frequency of 30 Hz. Furthermore, The uncorrected response uniformity of the linear array bolometers is less than 20%. 相似文献
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红外焦平面阵列在各类红外成像系统中发挥着巨大的作用。为提升红外焦平面的工作温度、量子效率和灵敏度,通常使用微透镜阵列作为红外焦平面的聚光器。当前微透镜阵列的制作材料通常与红外探测器材料不同,因此在集成装配时需要额外的工艺手段,工艺难度较大且效率较低。利用微纳光学超表面技术体系,可以在红外探测器衬底材料上直接制作平面式的固体浸没型微透镜阵列,实现前置微透镜与红外焦平面的单片集成。文中以红外探测领域最有潜力的锑化物Ⅱ类超晶格红外探测器为应用目标,设计了一种基于GaSb衬底的固体浸没式红外超表面透镜。设计的超表面透镜在中波红外波段工作,能适用于所有入射偏振。器件设计焦距为100 μm,理论上在目标波长下的最高聚焦效率达到70.7%,数值孔径(NA)达到1.15。该设计可以推动微透镜阵列向扁平、超薄、轻量的方向发展,简化微透镜阵列与红外焦平面阵列的集成工艺,有望提升红外焦平面的探测效率,并降低制造成本。 相似文献