等离激元共振增强多晶硅薄膜太阳电池性能研究

采用磁控溅射方法,在多晶硅薄膜太阳电池表面沉积了不同粒径大小的Au纳米粒子,利用粒径大小可调控的Au纳米粒子的局域表面等离激元共振增强效应(LSPR),对入射光中的可见光区域实现“光俘获”;采用UV-vis吸收光谱对LSPR进行了研究,结果表明,LSPR能够有效拓展Au纳米粒子的光谱响应范围(400～800 nm),并且,随着Au纳米粒子粒径的增大,LSPR共振吸收峰呈现出明显“红移”;同时,通过SERS表征,证实LSPR能够有效增强Au纳米粒子周围的局域电磁场强度;最后,多晶硅太阳电池的J-V特性曲线表明,当Au纳米粒子溅射时间为50 s时,多晶硅太阳电池光电转换效率(η)最高为14.8％,比未修饰Au纳米粒子的电池η提高了42.3％.     

纳米颗粒局域表面等离激元共振的光谱特性研究进展

LSPR与以往的SPR相比,具有独特的光学特性,在紫外-可见光区域表现强吸收作用的光学响应,且在温度,生物以及化学等传感器领域做出了比较独特的研究。通过对LSPR在传感器领域已有成果的论述,将这些内容呈现给读者。     

复合结构的等离激元模式耦合关系及光学特性研究

提出一种以Au为材料的正方形框和中空圆柱嵌套的亚波长周期性复合结构,采用时域有限差分算法对复合结构进行数值模拟研究.研究发现,波长在400～900 nm的线偏振平面波垂直入射情况下,最小的透过率能达到7.46％,最小的半峰全宽能达到7.25 nm,最大的反射率为87.61％,最大吸收率达到38.00％,且表现出透射光谱...     

基于表面等离激元耦合调控石墨烯点阵结构

由于石墨烯的无带隙线性能级结构,使得石墨烯等离激元具有能量局域强,响应频段宽,传播距离长,并可由偏置电压动态调控等优良特性。文章利用不受光信号的入射角和偏振方向影响的石墨烯点阵结构,结合石墨烯之间的表面等离激元耦合,通过改变底层石墨烯的费米能级,实现了石墨烯点阵结构谐振频率的调控。     

等离激元纳米杯的研究进展

等离激元纳米杯因其结构的非对称分布,显示出独特的电场磁场分布调制、光弯曲、强光散射和高光热转换效率等特性,其制备方法和多领域应用都获得了广泛研究。综述了等离激元纳米杯特别是金纳米杯的制备方法,包括基于微纳加工的物理制备方法和湿化学合成方法,分析对比了各种制备方法的优缺点及适用领域。介绍了等离激元纳米杯的光物理学特性,包括等离激元共振模式、吸收散射光谱特性和电场磁场特性,着重展示了纳米杯参数调谐特性。总结了等离激元纳米杯在光电器件和生物医学等领域的重要应用。最后对等离激元纳米杯的发展趋势与挑战进行了展望。     

金属表面等离激元增强聚合物太阳电池

研究了Au纳米颗粒表面等离激元增强聚噻吩(P3HT)与富勒烯衍生物(PCBM)共混体系聚合物太阳电池的光电转换效率。Au纳米颗粒表面由双十烷基二甲基溴化铵(DDAB)修饰,能够均匀分散在活性层中。研究了Au纳米颗粒的质量分数对电池性能的影响,发现质量分数为1.2%时,电池性能最佳,转换效率高达3.76%,较未掺杂的参比电池相对提高约20%。掺入Au纳米颗粒后P3HT和PCBM共混膜光吸收显著增强,从而使电池外量子效率大大增加。电池效率的提升主要归结于Au纳米颗粒表面等离激元激发所引起的近场增强。     

基于表面等离激元波导相位反转的可调Fano共振研究

表面等离激元是金属界面的自由电子俘获入射光波,在界面形成的一种混合激发态。表面等离激元能够突破光的衍射极限,将能量局域在金属-介质界面,基于表面等离激元原理的波导器件可以真正实现亚波长尺寸,被认为是最理想的纳米集成光路的信息载体。而Fano共振的产生,源于原子系统中一个分立的激发态能级与一个连续的激发态能级相互重叠,两个激发态之间出现了量子干涉。文章提出了基于亚波长非线性表面等离激元波导侧双齿双腔MIM(金属—介质—金属)结构。波导及齿状结构提供了一个连续态模式,而双侧腔提供了分离态模式,这两种模式发生干涉,产生了Fano共振现象。通过调节光强的大小对非线性腔进行调节,该系统实现了Fano线性发生了反转及相位反转的全关调制。     

基于表面等离激元热载流子效应的光解水研究进展

近年来,二氧化钛、氧化锌等半导体材料被广泛应用于光解水研究中.金属纳米结构激发的表面等离激元(SPP)热载流子效应能够有效地俘获入射光,进一步增强光能与化学能之间的转换效率,是提高半导体光解水性能的一种可行方法.合理地将金属纳米结构与半导体材料相结合,可以制备出高性能的光解水器件.首先介绍了半导体光解水以及SPP热载流子效应的基本原理,并以此为基础介绍了SPP增强型半导体光解水反应的物理机理.随后,依据半导体的形貌不同,总结了SPP热载流子效应用于不同纳米结构的研究进展.最后,对基于SPP热载流子效应的半导体光解水研究的发展趋势与挑战进行了展望.     

基于人工局域表面等离激元的液晶微波介电常数测量传感器

液晶材料在微波频段具有良好的调制特性,在微波可调谐器件领域具有巨大的应用潜力。本文针对液晶材料微波介电常数的测量需求,提出了一种基于人工局域表面等离激元谐振的传感器。通过设计环形谐振器结构,在sub-6 GHz频段形成局域表面等离激元窄带谐振峰。通过给液晶施加外加电场,能够实现对液晶介电常数的调控。通过谐振频点位置的拟合,能够得到对应的液晶的介电常数大小,从而实现液晶材料在微波频段的介电常数的测量。本文研究了不同液晶层厚度、不同液晶介电常数对人工局域表面等离激元谐振频点的影响。随着液晶层厚度增加或者液晶介电常数的减小,谐振频点f₁和f₂都逐渐增大。当液晶层厚度大于或等于0.5 mm时,谐振频点f₁和f₂随介电常数的变化具有良好的线性度,且具有高灵敏度(>400 MHz/Δε),远大于基于目前报道的其他形式介电常数传感器。同时,本传感器结构可以在液晶层上下施加电场,从而实现在不同外加电场作用下液晶材料微波介电常数的测量,在液晶微波特性研究领域具有应用潜力。     

晶体硅太阳电池表面钝化技术

介绍了晶体硅太阳电池表面钝化技术的发展历程,表面钝化膜在晶体硅太阳电池中所起的作用,以及晶体硅太阳电池中各种钝化膜和表面钝化技术。阐述了国内和国际对晶体硅太阳电池表面钝化技术的最新研究动态,重点论述了SiO2,SiNx,SiCx和Al2O3,以及这些钝化膜的叠层钝化技术的优缺点。在此基础上进一步指出SiO2/SiNx叠层钝化膜将成为今后工业化生产的研究重点,Al2O3及其叠层钝化膜将成为今后实验室的研究重点,由于表面钝化是提高晶体硅太阳电池转换效率最有效的手段之一,今后晶体硅太阳电池表面钝化技术仍将是国内和国际研究的热点问题之一。     

Phenylhydrazinium Iodide for Surface Passivation and Defects Suppression in Perovskite Solar Cells

In recent years, hybrid perovskite solar cells (HPSCs) have received considerable research attention due to their impressive photovoltaic performance and low‐temperature solution processing capability. However, there remain challenges related to defect passivation and enhancing the charge carrier dynamics of the perovskites, to further increase the power conversion efficiency of HPSCs. In this work, the use of a novel material, phenylhydrazinium iodide (PHAI), as an additive in MAPbI₃ perovskite for defect minimization and enhancement of the charge carrier dynamics of inverted HPSCs is reported. Incorporation of the PHAI in perovskite precursor solution facilitates controlled crystallization, higher carrier lifetime, as well as less recombination. In addition, PHAI additive treated HPSCs exhibit lower density of filled trap states (10¹⁰ cm^?2) in perovskite grain boundaries, higher charge carrier mobility (≈11 × 10^?4 cm² V^?1 s), and enhanced power conversion efficiency (≈18%) that corresponds to a ≈20% improvement in comparison to the pristine devices.     

Surface Reconstruction Engineering with Synergistic Effect of Mixed-Salt Passivation Treatment toward Efficient and Stable Perovskite Solar Cells

Surface passivation treatment is a widely used strategy to resolve trap-mediated nonradiative recombination toward high-efficiency metal-halide perovskite photovoltaics. However, a lack of passivation with mixture treatment has been investigated, as well as an in-depth understanding of its passivation mechanism. Here, a systematic study on a mixed-salt passivation strategy of formamidinium bromide (FABr) coupled with different F-substituted alkyl lengths of ammonium iodide is demonstrated. It is obtained better device performance with decreasing chain length of the F-substituted alkyl ammonium iodide in the presence of FABr. Moreover, they unraveled a synergistic passivation mechanism of the mixed-salt treatment through surface reconstruction engineering, where FABr dominates the reformation of the perovskite surface via reacting with the excess PbI₂. Meanwhile, ammonium iodide passivates the perovskite grain boundaries both on the surface and top perovskite bulk through penetration. This synergistic passivation engineer results in a high-quality perovskite surface with fewer defects and suppressed ion migration, leading to a champion efficiency of 23.5% with mixed-salt treatment. In addition, the introduction of the moisture resisted F-substituted groups presents a more hydrophobic perovskite surface, thus enabling the decorated devices with excellent long-term stability under a high humid atmosphere as well as operational conditions.     

硅系太阳电池表面钝化技术比较

通过对硅片的少数载流子有效寿命、硅太阳电池的反射损失和光谱响应这三个方面的研究,比较了目前主要的硅太阳电池表面钝化技术,对这些钝化技术的优缺点进行了分析和评价.从上述三个方面的比较可以看出,RTO/SiNx堆叠钝化技术在提高硅太阳电池性能上是最优的,具有良好的应用前景.     

Insights into Fullerene Passivation of SnO2 Electron Transport Layers in Perovskite Solar Cells

Interfaces between the photoactive and charge transport layers are crucial for the performance of perovskite solar cells. Surface passivation of SnO₂ as electron transport layer (ETL) by fullerene derivatives is known to improve the performance of n–i–p devices, yet organic passivation layers are susceptible to removal during perovskite deposition. Understanding the nature of the passivation is important for further optimization of SnO₂ ETLs. X‐ray photoelectron spectroscopy depth profiling is a convenient tool to monitor the fullerene concentration in passivation layers at a SnO₂ interface. Through a comparative study using [6,6]‐phenyl‐C₆₁‐butyric acid methyl ester (PCBM) and [6,6]‐phenyl‐C₆₁‐butyric acid (PCBA) passivation layers, a direct correlation is established between the formation of interfacial chemical bonds and the retention of passivating fullerene molecules at the SnO₂ interface that effectively reduces the number of defects and enhances electron mobility. Devices with only a PCBA‐monolayer‐passivated SnO₂ ETL exhibit significantly improved performance and reproducibility, achieving an efficiency of 18.8%. Investigating thick and solvent‐resistant C₆₀ and PCBM‐dimer layers demonstrates that the charge transport in the ETL is only improved by chemisorption of the fullerene at the SnO₂ surface.     

Double‐Sided Surface Passivation of 3D Perovskite Film for High‐Efficiency Mixed‐Dimensional Perovskite Solar Cells

Defect‐mediated carrier recombination at the interfaces between perovskite and neighboring charge transport layers limits the efficiency of most state‐of‐the‐art perovskite solar cells. Passivation of interfacial defects is thus essential for attaining cell efficiencies close to the theoretical limit. In this work, a novel double‐sided passivation of 3D perovskite films is demonstrated with thin surface layers of bulky organic cation–based halide compound forming 2D layered perovskite. Highly efficient (22.77%) mixed‐dimensional perovskite devices with a remarkable open‐circuit voltage of 1.2 V are reported for a perovskite film having an optical bandgap of ≈1.6 eV. Using a combination of experimental and numerical analyses, it is shown that the double‐sided surface layers provide effective defect passivation at both the electron and hole transport layer interfaces, suppressing surface recombination on both sides of the active layer. Despite the semi‐insulating nature of the passivation layers, an increase in the fill factor of optimized cells is observed. The efficient carrier extraction is explained by incomplete surface coverage of the 2D perovskite layer, allowing charge transport through localized unpassivated regions, similar to tunnel‐oxide passivation layers used in silicon photovoltaics. Optimization of the defect passivation properties of these films has the potential to further increase cell efficiencies.     

晶体硅太阳电池的双层结构钝化膜研究

针对目前基于p型硅片制备的单结太阳电池进一步提高表面钝化膜生产效率,利用氮化硅(SiNx)薄膜良好的钝化效果与价格低廉的二氧化钛(TiO2)膜,降低SiNx镀膜厚度减薄对少子寿命的影响。在单晶硅片表面先用PECVD法沉积SiNx薄膜,然后用热喷涂沉积TiO2薄膜。对比测试了热喷涂沉积TiO2薄膜前后电池的性能,结果表明在SiNx膜上增加TiO2膜层后少子寿命明显提高,这可能是TiO2膜结构内存在固定正电荷所致。这种双层结构封装后的太阳电池显示出了较好的光学与电学性能,对进一步改进太阳电池性能具有重要参考价值。     

基于高效体异质结的聚合物太阳电池研究

介绍了体异质结聚合物太阳电池的基本原理,并分析了限制体异质结有机太阳电池转化效率的因素。从提高激子的产生效率及其解离效率、电极对电荷的引出效率、电池的稳定性以及电池的光谱吸收范围四个方面,综述了提高体异质结聚合物太阳电池能量转化效率的方法。