数字家庭——传输与存储篇电力线传输与储存科技加持数位家庭逐渐成型

经过2004年的激情讨论后,表面上"数字家庭"这个名词似乎再也激不起产业界及分析师等权威人士的热情.然而情况却不然,随着网络的发展、生活习惯的改变及厂商推出的产品来观察,"数字家庭"这个名词正逐步转为动词,经过多年的酝酿,"数位家庭"终于逐渐成型.     

探询中国3G决策思维

2003年以后,全球3G市场进入新的阶段.跨国通信巨头们纷纷宣称,已经在WCDMA、cdma 2000两大标准方面取得了实质性进展,全面支持商用化.同时,集中开发WCDMA设备的欧洲厂商对于中国提出的TD-SCDMA也张开了怀抱,关于两大标准互补性的言论不绝于耳.香港和黄电讯在欧洲几国全面建设和运营3 G网络,中国的近邻日本、韩国3 G市场开始出现快速增长的迹象.这些经历无法代替一个关键性的角色,世界最大通信市场所在地的中国尚未吹响3G的号角.     

多名学者欲联名状告超星侵权网络盗版顽疾再刺业界神经

接连而至的官司,再次搅起版权领域的千层浪! 2007年4月17日,中国社科院研究员吴锐及其导师刘宝才的一纸诉状,将数字图书馆解决方案提供商北京世纪超星公司(下称"超星")推上了北京海淀区法院的被告席.     

告阿里巴巴商标侵权?这个玩笑开得太大了

一家国内最大的电子商务公司的商标被一家名不见经传的企业所拥有,听起来似乎很荒唐,然而细细深究,却更像是一个拙劣的玩笑. 11月6日,阿里巴巴网络有限公司(股份代号:1688)于香港联合交易所有限公司主板开始交易.开盘即达到30港元,较发行价13.5港元上涨122%,加上超额认购部分,融资17亿美元,市值超过200亿美元,创下中国互联网市值之最,同时也是全球最大互联网融资.     

iSCSI分析及其Linux驱动实现

iSCSI,是IETF制订的用于将SCSI数据块映射成以太网数据包的一项标准,是实现IP存储的重要技术之一。本文分析了iSCSI协议及其Linux系统中驱动的实现方法。     

IMS:在不断质疑中前进

IMS的出现为下一代网络的发展和业务的融合提供了一种思路和方式,但IMS本身依然还不是十分成熟,还存在着一些问题,如理解和评估困难、标准和产品脱节、商业模式不明确等,业界也有不同的声音.但尽管如此,IMS还是在一步步变成现实,这表现在标准化和运营商的网络部署和互操作性方面.     

IEC TC47半导体器件标准化最新动态

1 IEC TC47年会召开 2007年11月5～9日,在法国图卢兹召开了IEC TC47、SC47A、SC47E及相关工作组会议,来自英国、美国、德国、日本、韩国和中国国家委员会的数十名代表参加了会议.     

周忆,走向国际舞台的公关丽人

2007年3月9日,周五,晚.位于北京王府井大街旁的金宝大厦小南国餐厅内一派喜庆.50多位中国主流的IT媒体总编辑们相聚在这里,他们是来祝贺周忆女士荣升IBM亚太区副总裁的.这个职务在历史上(包括IBM在内的所有跨国公司),从来没有降临到任何亚裔人士的头上.周忆的进步,表明了中国本土公关人才开始走向国际舞台.     

支持多个SD卡的切换解决方案

市面上许多手机和便携设备(如数码相机)都能通过插入一块标准、小型或微型SD卡来增加内存.这一功能刺激了共享或扩展主机处理器SDIO(安全数字I,0)端口从而连接多个设备的需求.SD卡接口设计为一个6通道总线,其中1个通道用于时钟、一个用于命令,其余4个用于数据线路.     

得胜：从广东制造走向世界品牌——专访广东得胜电子有限公司总经理杨志豪

在第十七届中国国际专业音响、灯光、乐器及技术展览会的五号馆,有一个布置精致、宽敞明亮的展台,这就是著名的广东得胜电子有限公司展台.展区的外面,是得胜公司推出的"集成应用"系统方案的宣传画.进入展区,整洁的展台上按产品类别展示着得胜牌传声器、耳机、扩音器及科声产品.透明的玻璃演出间,乐队正在里面投入地演奏.展区中得胜公司的工作人员正在接待来参观的客人.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Call for Papers

正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its