周期极化GaAs晶体中差频产生太赫兹辐射的研究

传统的光学差频产生的太赫兹辐射转换效率低,不能获得高功率太赫兹辐射。本文对周期极化GaAs晶体中差频产生太赫兹辐射进行了理论计算,通过温度调谐实现了周期极化GaAs晶体中差频获得可调谐太赫兹波的输出。为了提高差频过程的增益和量子效率,在准相位匹配基础上引进了级联差频机理,并对最佳晶体长度和最佳泵浦频率进行了计算。结果表明,利用周期极化的GaAs晶体可以获得更高能量更高效率的太赫兹波辐射。     

基于非线性光学差频及参量效应的太赫兹源

基于非线性光学技术的THz源具有其独特的性能和优点,将基于非线性光学差频原理和光学参量效应,从理论上研究并分析THz波与抽运光、闲频光及相位匹配角之间的关系,得到THz波输出的条件和范围,并设计出宽波段连续可调的THz源。以调QNd∶YAG激光器和光学参量振荡器(OPO)作为抽运源,以GaSe和MgO∶LiNbO3晶体作为差频非线性晶体,根据相位匹配理论及光学参量效应,搭建两套THz波产生系统。其中,基于光学参量效应的THz辐射源有效地产生出THz信号。     

CO2激光差频GaSe晶体产生太赫兹波的数值计算

以可调谐CO2激光差频非线性GaSe晶体为例,在共线相位匹配方式下,计算了oe-e和oe-o两种相位匹配方式下的角度调谐特性、有效非线性系数、走离角和允许角。结果表明:GaSe晶体可产生73.84～3 000 m的太赫兹波,且有效非线性系数为41～54 pm/V;走离角在1.771～10.63之间;所允许的最大发散角为13.95～94.7 mrad,对入射光的方向性要求较高。对于500 m以上的太赫兹波,两种匹配方式除有效非线性系数外没有大的区别。模拟结果对于开展基于激光差频技术产生太赫兹的研究具有重要的指导意义。     

Continuous-Wave Frequency-Tunable Terahertz-Wave Generation From GaP

Continuous-wave (CW) single-frequency terahertz (THz) waves were generated using difference-frequency generation via excitation of phonon–polaritons in GaP. The two pump sources were an external cavity laser diode (LD) and an LD-pumped Nd : YAG laser. The power density of the latter beam was enhanced by using a ytterbium-doped fiber amplifier. The two incident beams were focused to near the wavelength of THz waves. This optical alignment enabled us to generate frequency-tunable CW THz waves in the 0.69–2.74 THz range. With a fixed angle between the pump beams, we obtained a frequency bandwidth as large as 600 GHz.     

Reflective terahertz tunable polarization controller

This paper proposes an optical device which can continuously change the polarization state of terahertz (THz) waves. The device consists of metal gate, anti-reflection coatings, liquid crystal and mirror. By changing the refractive index of liquid crystal in the interface between the metal gate and the mirror, the phase difference between two beams with orthogonal polarization is varied and a continuous phase shift is achieved. The phase shift of the device is calculated by using the finite difference time domain (FDTD) method, and the transmittance and reflectance are calculated by using the rigorous coupled wave analysis (RCWA) method. The results reveal that the structure can realize continuously tunable phase shift for THz wave at 1 THz.     

Theoretical analysis of stimulated polariton scattering from the A1-symmetry modes of KNbO3 crystal

Stimulated polariton scattering (SPS) based on noncollinear phase matching scheme from the A1-symmetry modes of KNbO3 crystal is investigated for generating terahertz (THz) wave. Frequency tuning characteristics of THz wave by varying the phase matching angle and pump wavelength are analyzed. The expression of the effective parametric gain length under the noncollinear phase matching condition is deduced. Parametric gain and absorption characteristics of THz wave in KNbO3 are theoretically simulated. The characteristics of KNbO3 for parametric oscillator (TPO) are compared with those of MgO:LiNbO3. The analysis results indicate that KNbO3 is an excellent optical crystal for TPO to enhance the output of THz wave.     

双周期渐变光子晶体结构及其纳米聚焦效应

利用3+3光束双锥干涉法设计了双周期渐变光子晶体结构阵列,并研究了它的纳米聚焦效应。通过调整内锥角和内外锥的增量角来改变光子晶体晶格的小周期及光子阵列的大周期,通过调整光束强度、偏振方向来实现渐变光子晶体晶格结构、形状等参数的改变。采用傅里叶变换的方法研究了光子晶体结构对光场的纳米聚焦效应。该结构对于提高发光二极管的提取效率、光显示、光耦合及光集成具有非常重要的意义。     

GaAs参量振荡产生太赫兹波的腔相位匹配研究

基于腔相位匹配的方法,研究了GaAs微片状晶体构成的光学微腔光参量振荡产生太赫兹波的条件与参数设计.计算了腔相位匹配下GaAs晶体的最优化腔长,通过调节GaAs晶体的温度研究了太赫兹波的输出情况,模拟了不同波长下最低的能量阈值.结果表明,在完全相位匹配很难实现的情况下,采用腔相位匹配能很容易地实现大范围的太赫兹波调谐输出.结果为小型化光学太赫兹源的实验与理论研究提供了参考.     

Design of GaAs/AlxGa1?xAs asymmetric quantum wells for THz-wave by difference frequency generation

The energy levels, wave functions and the second-order nonlinear susceptibilities are calculated in GaAs/Al0.2Ga0.8As/Al0.5Ga0.5As asymmetric quantum well (AQW) by using an asymmetric model based on the parabolic and non-parabolic band. The influence of non-parabolicity can not be neglected when analyzing the phenomena in narrow quantum wells and in higher lying subband edges in wider wells. The numerical results show that under double resonance (DR) conditions, the second-order difference frequency generation (DFG) and optical rectification (OR) generation susceptibilities in the AQW reach 2.5019 mm/V and 13.208 mm/V, respectively, which are much larger than those of the bulk GaAs. Besides, we calculate the absorption coefficient of AQW and find out the two pump wavelengths correspond to the maximum absorption, so appropriate pump beams must be selected to generate terahertz (THz) radiation by DFG.     

基于差频产生太赫兹的中远红外非线性光学晶体

文章介绍了ZnGeP2,GaSe,CdSe,GaAs,GaP,DAST等几种用于太赫兹辐射的中远红外非线性光学晶体的非线性性能,总结了利用它们通过非线性光学差频产生太赫兹方面的最近进展.最后给出了获得较高转换效率和能量的太赫兹波输出的非线性光学晶体应具备的条件.