非晶硅太阳能电池的新进展

对非晶硅材料的物理性能及工艺优势进行了阐述，其中介绍了一种新型的刻划成图工艺，即等离子CVM，简单回顾了非晶硅太阳池的历史发展，分析了非晶硅太阳电池当前所存在的问题，提出了其发展的方向，其中，主要论述了叠层非晶硅太阳电池，并介绍了几种新型的非晶硅电池，最后，概括了非晶硅太阳电池的应用现状及前景。     

频道多了，节目也要跟上

频道多了，节目也要跟上吴为忠文年岁渐长，早已过了不惑之年，到了这样的年龄，晚上如果没有公务缠身就懒得外出，看电视似乎成了我业余生活的一个主要内容。但是，电视看得多了，总忍不住要说三道四，这也许是一种职业病。我的住处已经装上了闭路电视，又与有线电视台联...     

“掘金”网络优化市场——移动通信网络优化服务特点及其发展策略

移动通信网络优化服务由于借助了设备厂商和专业第三方优化服务公司的技术优势，很好地提升了现有网络运行的质量，弥补了网络运营商技术人员的缺口，培养了运行维护人员的专业技能，积极发挥了现有网络资源的利用率，有效地降低了网络的维护成本，提高了客户的满意度和运营效益，     

价格决定一切——Konica Minolta Dynax5D/α-5 DIGITAL

现在数码单反相机的价格已经越来越低了，甚至还出现了5000元左右的产品。当然，相机有了，除了镜头之外，剩下的最重要的东西就是存储卡了，对于那些喜欢疯狂拍片的摄友来讲，这款4GB的高速CF卡成了他们的最佳选择，有了它，你再也不用担心使用数码伴侣会意外丢失数据了。而且从何种上来讲，也会方便100倍！     

用于成像引信图像识别的局部特性提取技术

根据成像引信的扫描成像机理，在详细分析了引信目标图像特性的基础上，论述了四种适用于引信目标图像的局部特征：角点，轮廓曲线段形状特征，线矩和弯曲能量，并提出了一种子块特征的提取算法。最后，分析了在应用局部特征进行了识别时遇到的问题并指出了解决方法，本文的研究对于其他不完整图像识别问题，如工件识别，机器人视觉，场景分析，医学图像的解释，飞行器的识别等，同样很有意义。     

IT人士群聚喝酒的讲究

大家喝的啤酒，这时你入座了…… 你给自己倒了杯可乐，这叫低配置。 你给自已倒了杯啤酒，这叫标准配置。 你给自己倒了杯茶水，这茶的颜色还跟啤酒一样，这叫木马。 你给自己倒了杯可乐，还滴了几滴醋，不仅颜色跟啤酒一样，而且不冒热气还有泡泡，这叫超级木马。 你的同事给你倒了杯白酒，这叫推荐配置。     

发射站固定的双站合成孔径声纳成像研究

本文建立了发射站固定的双站合成孔径声纳模型，在分析了“停-走-停”假设引起相位误差的基础上，提出了对误差补偿的方法，研究了双站SAR距离-多普勒算法，并提出了基于该算法的双站SAR成像方案，最后给出了有关计算机仿真结果，实现了双站SAR对点目标的成像，     

河北直播卫星公共服务试点工作进展顺利

作为广电总局直播卫星广播电视公共服务试点地区，河北广电局按照中央领导指示和总局的安排部署，明确思路，统筹协调、多方合作，积极筹资、提供保障，成立了直播卫星公共服务工作领导小组，制定了《直播星公共服务试点方案》，明确了试点工作目标和工作职责，规范了运作流程，为工作的顺利开展提供了坚实保障。     

同步攻击在格式化文本水印攻击中的研究

针对目前没有基于word的同步攻击分类方法，分析了同步攻击的基本原理，结合word特有的属性，提出了word特有的同步攻击分类方法，用来完善现有的同步攻击的分类方法。同时，针对word的格式特征，提出了word的攻击范围选择。结合攻击方法分类，完善了攻击强度。运用新的攻击强度，对word进行了同步攻击测试实验，分析了实验结果，阐述了同步攻击在不同强度下对数字水印算法的不同影响。     

多媒体技术对民族民间音乐的推动与保护作用--以中国民族民间音乐为例

民间音乐是我国古老文化中的一颗璀璨夺目的明珠，文章从民族民间音乐的定义和地位出发，重点分析了民族音乐的具体特征。现代互联网技术，将这些特征进行更好的发扬，在保证了传统民间音乐的精华的同时，给民间音乐注入了更多新的活力，目前，多媒体技术，将民族音乐带入了课堂、带入了影视行业，为我们民族音乐的更好发展提供了更为宽广的途径。     

石英音叉陀螺等效参数的测量与分析

分析了石英音叉陀螺连接电路中采样电阻的等效电容(电容特性)对测试的影响,求出了陀螺等效参数,找出了理想工作点.根据陀螺连接电路,针对考虑和不考虑采样电阻的等效电容两种情况进行建模,利用基于初等反射阵(Householder矩阵)变换的最小二乘法求出陀螺两组等效参数,通过仿真对比说明了采样电阻的等效电阻对测试结果有影响,测试中必须考虑.通过求得的参数进行仿真研究,说明了陀螺的真实串联谐振频点为陀螺的理想工作点.     

Multi-emitter Si/GexSi1-x heterojunctionbipolar transistor with no base contact and enhanced logic functionality

We demonstrate multi-emitter Si/Ge_xSi_1-x n-p-n heterojunction bipolar transistors (HBT's) which require no base contact for transistor operation. The base current is supplied by the additional emitter contact under reverse bias due to the heavy doping of the emitter-base junction. Large-area HBT test structures exhibit good transistor characteristics, with current gain β≈400 regardless of whether the base current is supplied by a test base electrode or one of the emitter contacts. These devices have enhanced logic functionality because of emitter contact symmetry. Since device fabrication does not require base electrode formation, the number of processing steps can be reduced without significant penalty to HBT performance     

Theory of cylindrically symmetric unijunction transistors

A general theory for near-intrinsic homogenous semiconductor material is extended to the base region of an ideal cylindrical-geometry unijunction transistor. The theory predicts static emitter characteristics for planar geometries with cylindrical symmetry. These predicted characteristics include the effects of drift, diffusion, and simple recombination, and qualitatively agree with experimental data at high injection.     

The influence of heavy doping on the emitter efficiency of a bipolar transistor

The emitter efficiency current gain βγis calculated taking into account the effect of the bandgap decrease caused by heavy doping of the emitter. It is found that this effect reduces the emitter efficiency and explains experimental results on the temperature dependence of the current gain. It also predicts an optimum emitter doping for a given base doping.     

A new emitter design of InGaP/GaAs HBTs for high-frequencyapplications

An HBT (heterojunction bipolar transistor) structure using an AlGaAs-InGaP emitter is proposed. The AlGaAs-InGaP configuration introduces an electron launcher in the emitter and makes use of the velocity overshoot effect. This enhances the emitter transport and reduces the electron accumulation in the emitter. Simulations show that, by using the AlGaAs-InGaP structure, the emitter charging time can be greatly reduced compared to the conventional AlGaAs emitter design. As a result, the cutoff frequency can be substantially increased. A cutoff frequency of 235 GHz has been predicted     

Simulation and design of field emitter array

Some simulation results about potential, field strength, and emitting current density of cone-shaped emitter arrays are presented. Several important design features about the field emitter array are discussed. The most striking feature is that if one wants to obtain more current from the field emitter array in a given device area, there is a limit to the density of the emitter array due to the emitter tip field strength lowering effect, which is a result of the interaction from nearby surrounding tips. If one reduces the tip radius to increase the field strength a higher current density is compensated by a reduced effective emitting area; therefore, to obtain the highest emitter current for a certain set of designed emitter array geometric parameters a corresponding optimal tip radius needs to be determined     

低温高注入硅双极晶体管电流增益的定量模拟

本文考虑了基区复合电流，发射结空间电荷区复合电流，基区高注入引起的禁带变窄效应，Ｅａｒｌｙ效应，基区和发射区电导调制效应，有效基区展宽效应以及发射区电流集边效应，定量地模拟了硅双极晶体管电流增益在７７Ｋ和３００Ｋ时与集电极电流的关系，并且与实验结果相吻合，计算还表明在低温７７Ｋ时，电流增益的大注入效应由基区电导调制效应和发射区电流集边效应决定，而在３００Ｋ时则由有效基区展宽效应决定。     

Exciton management by co-doping of blue triplet emitter as a lifetime improving method of blue thermally activated delayed fluorescent devices

Co-doping of a blue phosphorescent emitter in a thermally activated delayed fluorescent (TADF) emitter based emitting layer was developed as an approach to extend the lifetime of blue TADF devices by managing excitons and polarons in the emitting layer. The blue phosphorescent emitter was doped at a very low doping concentration below 1 wt% to suppress triplet-triplet and triplet-polaron quenching effect in the TADF emitting layer. The doping of the blue phosphorescent emitter led to great extension of the lifetime of the TADF devices by hole trapping effect of the blue triplet emitter which widened exciton formation zone in the TADF emitting layer. More than twice extension of the operational lifetime of the device was demonstrated by the co-doping approach irrespective of the doping concentration of the TADF emitter in the emitting layer.     

Effect of emitter contact materials on high-performance verticalp-n-p transistors

Ion-implant doped polysilicon, in situ doped polysilicon, and in situ doped ultrahigh vacuum chemical vapor deposition (UHV/CVD) low-temperature epitaxial silicon emitter contacts were used to fabricate shallow junction vertical p-n-p transistors. The effect of these materials on emitter junction depth and on device characteristics is reported. A DC current gain as high as 45 was measured on polysilicon emitter devices. Regardless of emitter contact material, all devices showed sufficiently high breakdown voltages for circuit applications. However, only for ion-implant doped polysilicon emitter devices was the narrow-emitter effect observed through the emitter-collector punchthrough voltage, emitter resistance, and current gain measurements     

Optimization of emitter cap growth conditions for InGaP/GaAs HBTs with high current gain by LP-MOCVD

The effect of emitter cap growth conditions on the common-emitter current gain of InGaP/GaAs HBTs, grown by LP-MOCVD, has been studied. This work shows that the material quality of a carbon-doped base is highly dependent on the emitter cap growth. The emitter cap growth effectively serves as a source of thermal stress. This stress on the base during the emitter and cap growth causes the formation of carbon-related defects in the base that increase the base recombination and reduces the current gain. Atomic force microscopy is used to identify these carbon-related defects. Gain improvements of about 40% have been achieved by optimizing the emitter cap growth conditions to reduce the thermal stress.