高速光接收组件同轴结构封装关键技术研究

在接入网中,低成本、小尺寸的同轴结构封装10 Gb/s光接收组件起着非常重要的作用。在微波频段,封装器件引入的寄生参数已经成为制约其高频特性的主要因素之一。基于传输线理论,建立了包含芯片、金丝、管座的小信号等效电路模型。等效电路元件与实际封装器件有对应的关系。组件高频特性随元件参数值变化而变化。仿真结果表明金丝对其高频特性影响很严重。为了减小金丝电感,提出一种优化方案。并结合实际工艺条件,制作了样品,实验结果表明该样品的传输速率达到10 Gb/s,满足10 Gb/s光网络传输的要求。     

NHNOP20光通信平台

由Broadcom（博通）公司新推出的10Gb／s以太网物理层器件BCM8706 10GbE（SFP＋至XAUI）收发器，该器件采用了Broadcom久经考验的数字信号处理（DSP）技术，为从1-10Gb／s以太网升级提供了一条途径，可帮助客户保护在已有多模和单模光纤基础设施上的投资。     

喇曼光纤放大器的新进展

随着10Gb／s DWDM长距离传输系统的大量应用和40Gb／s技术的日趋成熟，喇曼光纤放大器的重要性日渐显露，并逐步进入商用。光器件制造商竞相研制出了性能优良的喇曼光纤放大器，主要是希望利用喇曼光纤放大器特有的分布式放大，可降低非线性影响、噪声特性好等特点，进一步推动高速，大容量，长距离光纤传输系统的发展。     

高速大容量密集波分复用光纤传输实验系统

介绍863计划光电子主题建立的光电子器件试验床（Testbed）的概况及其最近的实验结果，包括4×622Mb／s、3级EDFA级联、320km光纤传输实验，使用LiNbO_3外调制器的2．5Gb/s光纤传输实验和270Mb／s数字分量电视的光纤传输实验等，实验结果显示了国产光电子器件的突破性进展和应用开发的潜力。     

色散补偿用啁啾光纤光栅

随着单信道传输速率的提高（10Gb/s、40Gb/s系统)和信号传输带宽的增加，光纤传输系统中的色散问题日益显著，目前的10Gb/s光传输系统中，主要采用色散补偿光纤（DCF）进行色散补偿。DCF具备能实现宽带补偿的优点，但也存在突出的缺点：非线性效应显著；损耗大（为补偿80km的光纤色散需增加8到10dB的附加损耗)，长度随不同的色     

基于STM-64的甚短距离并行光传输系统

研究了STM-64数据帧的转换映射技术，利用垂直腔面发射激光器（VCSEL）列阵光源和PIN列阵探测器成功研制出10Gb／s的甚短距离12信道SDH并行光传输系统，该系统结构紧凑，具有检错和纠错功能。跟传统的10Gb/s串行光传输系统相比，本系统降低了对单路器件传输性能的要求。经SDH传输测试仪测试，系统能实现无误传输。     

利用光子晶体光纤实现10 Gb/s光传输系统宽带色散补偿

利用光子晶体光纤（PCF）,在10Gb／s光传输系统中、20nm宽带范围内完成了色散补偿传输实验,得到了很好的色散补偿效果。实验中,10Gb／s光脉冲序列经过2．163km普通单模光纤被展宽后,用26mPCF对其进行色散补偿,此光纤在C波段20nm波长范围内对普通单模光纤能够实现较好的色散斜率补偿。实验结果表明,PCF在色散补偿方面具有很大的潜力,在未来光通信系统中将发挥重要作用。     

利用光子晶体光纤实现10 Gb/s光传输系统的色散补偿

利用光子晶体光纤（PCF）在10Gb/s光传输系统中对普通单模光纤中传输的光脉冲进行了色散补偿，获得了很好的补偿效果。实验中，10Gb／s光脉冲序列经过2.163km普通单模光纤被展宽后．利用26m长光子晶体光纤对其进行色散补偿．补偿后脉冲基本恢复到了初始形状。进一步的理论计算表明，此光纤在C波段20nm波长范围内对普通单模光纤能够实现较好的色散斜率补偿，补偿后剩余色散小于5ps／nm。理论与实验结果表明光子晶体光纤在色散补偿方面具有很大的潜力．在未来光通信系统中将发挥重要作用。     

半速率时钟10Gb／s光纤传输用2：1复接器设计

介绍了使用0．2μm GaAsHEMT工艺设计的一个10Gb／s以上的光纤传输用2：1复接器。该复接器使用了半速率时钟的结构。为了减小功耗，设计时使用了3．3V的电源，并对每个单元进行了优化。整个芯片的功耗约为460mW。测试结果显示，该电路可以工作在10Gb／s以上的数据速率。     

取样啁啾光纤光栅传输特性的研究

运用传输矩阵理论，对一种新型色散补偿光纤光栅——取样啁啾光纤光栅的传输特性进行了模拟研究。研究了光栅反射谱特性随光栅参数的变化规律。作为应用实例，本文给出了适合于对10Gb／s WDM系统进行色散补偿的8通道取样啁啾光栅的相关参数。     

40 Gb/s Traveling‐Wave Electroabsorption Modulator‐Integrated DFB Lasers Fabricated Using Selective Area Growth

In this paper, we present the fabrication of 40 Gb/s traveling‐wave electroabsorption modulator‐integrated laser (TW‐EML) modules. A selective area growth method is first employed in 40 Gb/s EML fabrication to simultaneously provide active layers for lasers and modulators. The 3 dB bandwidth of a TW‐EML module is measured to be 34 GHz, which is wider than that of a lumped EML module. The 40 Gb/s non‐return‐to‐zero eye diagram shows clear openings with an average output power of +0.5 dBm.     

Fabrication and Packaging of 40-Gb/s AlGaInAs Multiple-Quantum-Well Electroabsorption Modulated Lasers Based on Identical Epitaxial Layer Scheme

High-speed AlGaInAs multiple-quantum-well (MQW) electroabsorption modulated lasers (EMLs) based on an identical epitaxial layer (IEL) integration scheme are developed for 40-Gb/s optical fiber communication systems. A self-aligned planarization technique has been adopted to reduce the capacitance of the electroabsorption modulator (EAM). The IEL structure EML chips exhibit a small signal modulation bandwidth around 40 GHz. The influence of residual reflection at the modulator facet on the small signal modulation response is investigated. Submount containing a grounded coplanar waveguide (GCPW) transmission line is used for packaging the EML chips into transmitter modules. The optimization of the GCPW structure to suppress resonances in frequency response due to parallel-plate modes is presented. Clear eye opening under 40-Gb/s nonreturn-to-zero (NRZ) modulation has been demonstrated for the packaged EML module.     

Fabrication and Characteristics of 40-Gb/s Traveling-Wave Electroabsorption Modulator-Integrated DFB Laser Modules

We have developed 40-Gb/s traveling-wave electroabsorption-modulator-integrated distributed feedback laser (TW-EML) modules using several advanced technologies. First, we have adopted a selective area growth (SAG) method in the fabrication of the 40-Gb/s EML device to provide active layers for the laser and the electroabsorption modulators (EAMs) simultaneously. The fabricated device shows that the measured 3-dB bandwidth of electrical-to-optical (E/O) response reaches about 45 GHz and the return loss (S₁₁) is kept below -10 dB up to 50 GHz. For the module design of the device, we mainly considered electrical and optical factors. The measured S₁₁ of the fabricated 40 Gb/s TW-EML module is below -10 dB up to about 30 GHz and the 3-dB bandwidth of the E/O response reaches over 35 GHz. We also have developed two types of coplanar waveguide (CPW) for the application of the driver amplifier integrated 40 Gb/s TW-EML module, which is a system-on-package (SoP) composed of an EML device and a driver amplifier device in a module. The measured S₁₁ of the two-step-bent CPW is below -10 dB up to 35 GHz and the measured S₁₁ of the parallel type CPW is below -10 dB up to 39 GHz.     

High-performance and low-consumption 10 Gb/s GaAs PHEMT driver for external modulation transmitter

This letter describes the realization of a high-performance GaAs PHEMT driver for 10 Gb/s transmitter with external coding in long haul optical transmission systems. It is shown that with an appropriate design for both IC and packaging, gain up to 14 dB, 2.5 Vp-p output drive-voltage and 1.5 W power consumption can be achieved, with adequate switching times for bit rates up to 12.5 Gb/s. The module has been successfully tested with a 18 GHz bandwidth polarization-independant pigtailed MQW electroabsorption modulator.     

10Gb/s EML-TOSA及其在中长距离光通信中的应用

介绍了10Gb/s EML-TOSA的工作原理、主要结构和性能;通过调测和比较,给出了EAM的“1”码电平和峰-峰调制电压最佳条件;分析、讨论了10Gb/s EML-TOSA的动态谱宽、眼图、色散容限和阻抗匹配等问题;指出了10Gb/s EML-TOSA具有动态谱宽较小,色散代价较小的特点,在中、长距离实用化光通信中将有广泛的应用.     

ETDM Transmitter Module for 100-Gb/s Ethernet

Performance of a packaged distributed-feedback travelling-wave electroabsorption modulator module for data transmission at 100 Gb/s is presented for the first time. Clearly open eye diagrams at 80 Gb/s with an extinction ratio (ER) of 4.9 dB and 100 Gb/s with ER 4.2 dB (limited by measurement setup) are demonstrated together with data transmission over 100-m-long standard single-mode fiber and over dispersion-compensated 10-km fiber link.      

低波长漂移的电吸收调制DFB激光器

采用端面有效反射率法,从理论上计算了单片集成电吸收调制DFB激光器（Electroabsorption Modulated DFB Laser,EML）的腔面反射率、耦合强度（κL）对其波长漂移的影响.同时在实验中通过改变腔面的反射率来验证计算结果.理论与实验的结果表明：为提高EML的模式稳定性,必须减小调制器一端的反射率,同时增加DFB激光器的κL.最终我们采用选择区域生长（Selective Area Growth,SAG）的方法,制作了低光反馈出光面的单脊条形EML,在2.5Gb/s的非归零(NRZ)码调制下,经过280km的标准光纤传输后,没有发现色散代价.     

Direct current to 34.1-Gb/s, 19-Gb/s/cm/sup 3/ low-jitter parallel optical interconnecting module for high-speed memory test systems

A protocol-free parallel optical interconnecting module is introduced as a solution to solve memory test system transmission bottlenecks. The optical transmission system flexibly suited for a memory test system is reviewed and discussed. A parallel optical module capable of transmitting from dc to 34.1Gb/s (4.267 Gb/s /spl times/8 ch) has been developed. A data transmission throughput density per unit volume of 19 Gb/s/cm/sup 3/ is achieved. A random jitter of less than 3-ps root-mean-square is also achieved. Furthermore, high-density optical connector, high-density optical fiber cable, fiber guides, and cable management/reinforcement members suited for mechanical requirements of the memory test system have been developed.     

Design and Fabrication of 1.25-Gb/s Full-Triplex Transceiver Module With PLC on a Lossy Si Substrate for G/E-PONs

1.25 Gb/s optoelectronic full-triplex transceiver module with planar-lightwave-circuits was designed and fabricated for the fiber-to-the-home services according to G/E-PONs standards. A low electrical crosstalk of the critical characteristics for the reliable operation of the 1.25 Gb/s full-triplex transceiver module is intensively investigated because the electrical crosstalk on a resistive silicon substrate is more serious than that on a dielectric substrate. It is observed that the performances of the transmitter and receiver satisfy the transmitter and receiver specifications defined in the standards. From this proposed module layout, a design convenience as well as a great reduction of the silicon substrate size by about 50% was completely achieved. Consequently, the 1.25 Gb/s full-triplex transceiver module was fabricated with electrical and mechanical packaging technologies such of a low crosstalk design and a passive alignment method.     

基于同一外延层结构的10Gb/s单片集成光发射模块

利用同一外延层集成工艺方法制作了10Gb/s电吸收调制器/分布反馈(DFB)半导体激光器单片集成光发射模块.在器件中引入增益耦合机制以提高单模成品率,并采用感应耦合等离子体干法刻蚀技术以降低调制器电容.集成器件阈值电流为12mA,在-2V偏置时的消光比为15dB,器件的小信号调制带宽超过10GHz.在10Gb/s调制速率下经过35km单模光纤传输后,误码率为10-12时的功率代价小于1dB.