热蒸镀法与溶胶-凝胶法制备的WO3薄膜

采用真空热蒸发沉积技术在衬底上沉积了WO3薄膜；以金属W粉为无机原料，溶胶—凝胶技术结合浸渍镀膜方法制备出WO3薄膜，借助SEM、可见光分光光度计、椭偏仪等仪器测量了薄膜的特性。实验表明：热处理使两种方法制得的薄膜致密，折射率增大，WO3颗粒增大；在热处理条件相同的情况下，溶胶—凝胶法制备的WO3薄膜折射率比热蒸镀法制备的WO3薄膜折射率小。     

用脉冲激光沉积法制备类金刚石膜及金刚石薄膜

简要评述了用脉冲激光沉积技术制备类金刚石膜及金刚石薄膜的研究进展，总结了激光脉冲沉积制备薄膜的基本原理及其特点，分析了激光波长，能量，衬底温度等对薄膜质量的影响。     

太阳能光伏电池及其气相沉积技术研究进展

对太阳能光伏电池的发展现状进行了综述，重点论述了气相沉积技术及其在非晶硅、CIGS等薄膜太阳电池薄膜制备中的应用，并对气相沉积技术及太阳能光伏电池的发展前景进行了展望。     

功能梯度薄膜的脉冲激光沉积研究进展

介绍了功能梯度薄膜材料的特点和应用 ;比较了功能梯度薄膜常用制备方法 ;概括了功能梯度薄膜制备中的掺杂技术并给出了脉冲激光沉积功能梯度薄膜的模型 ;论述了脉冲激光沉积技术在制备功能梯度薄膜材料方面的应用与最新进展     

脉冲激光沉积高性能薄膜制备及其应用研究进展

随着脉冲激光器的飞速发展和成本下降,利用脉冲激光沉积制备高性能薄膜逐渐成为近年来的一个研究热点,被广泛应用于多个领域。本文首先概述了脉冲激光沉积的基本原理和特点;然后从材料体系的角度系统地综述了近年来脉冲激光沉积高性能薄膜的研究现状,详细地介绍了脉冲激光沉积制备的金属薄膜、合金薄膜、碳薄膜、化合物薄膜以及复合薄膜的工艺、结构、形貌和性能特点,继而对薄膜沉积技术在光电、新能源、生物、超导、电子封装等重点和新兴领域的应用现状进行介绍;最后对脉冲激光技术制备高性能薄膜进行了总结和展望。     

石墨烯薄膜的制备及其在电子材料中的应用

阐述石墨烯薄膜制备技术的特点，包括微机械剥离、金属表面沉积、液相剥离、化学气相沉积技术，探讨石墨烯薄膜在高频电子器件、集成电路、光电探测器、光调制器、透明导电材料中的应用。     

脉冲激光沉积工艺参数对生物活性薄膜的影响

脉冲激光沉积是近年来出现的一项制备薄膜的新技术,在制备生物活性薄膜方面显示出独特的优越性。介绍了脉冲激光沉积技术的原理及特点,详细综述了反应气氛、衬底温度、激光波长、能量密度、靶材性能、沉积速率及薄膜厚度等工艺参数对羟基磷灰石及生物玻璃薄膜组织及性能的影响,展望了该项技术的应用前景。     

用金属有机化合物制备铁电薄膜：工艺及进展

本文概述了以金属有机化合物为原料制备铁电薄膜的工艺过程、特点，以及最新研究进展；着重介绍了金属有机物化学气相沉积，金属有机物热分解，以及溶胶一凝胶三种制备技术在铁电薄膜制备领域中的应用。     

p型微晶硅薄膜的沉积及其在微晶硅薄膜太阳电池中的应用

采用等离子体化学气相沉积（PECVD）方法制备了硼掺杂微晶硅薄膜和微晶硅薄膜太阳电池.研究了乙硼烷含量、p型膜厚度及沉积温度对硼掺杂薄膜生长特性和高沉积速率的电池性能的影响.通过对p型微晶硅薄膜沉积参数的优化，在本征层沉积速率为0.78nm/s的高沉积速率下，制备了效率为5.5%的单结微晶硅薄膜太阳电池.另外，对p型微晶硅薄膜的载流子疏输运机理进行了讨论.     

脉冲激光沉积法制备二氧化钒薄膜的研究进展

主要阐述了脉冲激光沉积(PLD)技术在制备金属氧化物方面的物理过程和技术特点,详细介绍了脉冲激光沉积制备二氧化钒(VO2)薄膜的工艺参数和同内外研究进展,并与几种常规制备方法进行了对比,给出了脉冲激光沉积掺杂对VO2溥膜特性的影响,以及脉冲激光沉积制备VO2纳米材料,讨论了脉冲激光沉积制备VO2薄膜存在的问题和发展方向.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its