S波段20W脉冲耿氏振荡器

本文描述了脉冲耿氏二极管、微波电路、脉冲调制器的结构和设计原则;给出了脉冲耿氏振荡器研制结果:在3—4GHz范围内,最大脉冲功率为20W,最大效率为5%,工作比≤1%。     

X波段脉冲耿氏振荡器

文章描述了X波段脉冲耿氏二极管、微波电路、脉冲调制器结构和设计原理以及脉冲耿振荡器的研制结果:在9～10GHz范围内,脉冲功率一般值为5～9W,最佳值10.8W,最大效率为5.5%,最大工作比为1%.     

GaAs激光器的微微秒脉码调制

贝耳实验室已研制成一种使激光二极管以十分之几亳微秒的间隔发射脉冲的新技术。据说使一个双稳态耿氏效应开关与一个GaAs双异质结激光器相串接,当激光高能态与低能态之间出现脉冲编码开关作用时,获得的激光强度上升时间下降到200微微秒,下降时间下降到400微微秒。     

基于耿氏效应的太赫兹器件的研究进展

介绍基于耿氏效应的器件在太赫兹领域的研究,详细地阐述耿氏二级管的原理、工艺流程、关键技术的解决和耿氏二极管频率和功率的提高等.重点介绍耿氏二极管的封装工艺和耿氏二极管腔体的具体结构.系统论述通过制备腔体需要的关键尺寸,如腔体内部尺寸、波导型号,从而提取基波与谐波,并提出其提高频率和功率的途径.     

GaAs／A1As异质谷间转移电子器件微波振荡特性的研究

本文介绍了应用直接带隙ＧａＡｓ和间接带隙ＡｌＡｓ构成的量子阱产生异质谷间转移电子效应来制作新毫米波振荡器件－异质谷间转移电子器件。概述了器件的结构和基本的微波工作特性，器件已在８ｍｍ波段输出３２０ｍＷ连续波功率，最高振荡效率８％，脉冲工作时输出功率达２Ｗ，效率１０％，然后着重介绍该器件的振荡频率，输出功率随偏压的变化关系，突出它与常规耿氏器件之间的差异，最后简要描述器件计算机模拟中求出的器件内的电     

晶向的各向异性对InN耿氏二极管的影响

由于InN材料具有各向异性的特性,其电子迁移率沿c轴(Γ-A方向)和底面(Γ-M方向)不同,同时,其负微分电阻率在不同晶向上也不同。利用Farahmand Modified Caughey Thomas(FMCT)迁移率模型描述了InN材料在不同晶向上的电子输运特性,利用文中提出的参数提取方法分别提取了InN在不同晶向上的FMCT模型参数。为了将InN材料的各向异性特性应用于耿氏(Gunn)二极管的制作,使用Silvaco-atlas半导体仿真软件对纤锌矿InN n⁺ⁿⁿ⁺和n⁺ⁿ-nn⁺两种结构的耿氏二极管进行数值仿真,对沿两个晶向上制作的InN耿氏二极管的输出特性进行了比较。结果表明:InN耿氏二极管沿Γ-A方向比沿Γ-M方向获得的频率和转化效率更高。InN材料沿Γ-A方向更适合制作耿氏二极管,该研究为制作InN耿氏二极管提供了参考。     

半导体器件

Y90-62009-407 0003760耿氏二极管的基本原理与制造=The Gunn-diode:fun-damentals and fabrication[会,英]/van Zyl,R.& Per-old,W.//Proceedings of the 1998 South African Sympo-sium on Communications and Signal Processing(COM-SIG’98).—407～412(PC)简单介绍了耿氏二极管。讨论了耿氏振荡的基本原理,并通过相关模拟予以说明。给出了典型的空腔耿氏二极管模拟。介绍了低功率耿氏二极管制造过程。参6N2000-06366 0003761电子情报通信学会技术研究报告:硅材料与器件SDM98-210～222(信学技报,Vol.98,No.652)[汇,日]/日本电子情报通信学会.—1999.03.—89P.(L)本文集为 MOS 器件技术、SOI 衬底与器件技术专     

C波段20W脉冲耿振荡器

完整的脉冲耿振荡器包括脉冲耿二极管、微波电路及脉冲调制器。本文主要描述了该振荡器的结构和设计原理,并给出了C波段脉冲耿振荡器的研制结果:在4～6GHz,得到的最大脉冲功率为22W,最佳效率为5％,最大工作比为1％。     

3.5GHz 65W硅脉冲大功率晶体管研制

介绍了采用梳状发射极自对准工艺研制的硅微波脉冲大功率晶体管的实验结果。在3．5GHz频率下,该晶体管脉冲输出功率65W,功率增益7dB,集电极效率35％（脉冲宽度100微秒,占空比5％）。     

集成在介质谐振器上的耿氏振荡器

集成在介质谐振器上的耿氏振荡器《ＭｉｃｒｏｗａｖｅＪｏｕｒｎａｌ））１９９４年（第３７卷）第２期报道了由介质部分填充的柱形腔在５．５ＧＨＺ时脉冲功率为３Ｗ的耿氏振荡器。以往的耿氏或雪崩振荡器是把Ｍ极管设计在腔体中，并由腔体控制振荡频率。为了减小尺寸，...     

Millimeter wave pulsed gunn oscillator for low chirp radar application at W-Band

Pulsed Gunn oscillator at 94 GHz has been developed using GaAs CW Gunn diode, by choosing a proper operating point and resonant circuit. Peak power output of 25 mw at 94 GHz with a pulse width of 2 microseconds and duty factor of 2% is achieved. Bias circuit oscillations are suppressed by rising the operating voltage alongwith other circuit considerations.     

Switching speed and power dissipation of planar-type Gunn diodes

The switching speed and power dissipation of planar-type Gunn diodes were investigated both by experiment and theoretical analysis. In the experiment, two-terminal planar-type Gunn diodes with various geometries were fabricated and their switching characteristics were measured under pulse and d.c. biased operations. Under pulse bias, a delay time of 60 psec and a power-delay product of 20 pJ were obtained with Gunn diodes having stick-type active region of 30 μm in length. Under d.c. bias, the geometry of the active region was carefully selected to optimize the trapezoid structure in order to achieve a stable operation, and a delay time of 80 psec and a power-delay product of 50 pJ were obtained. Theoretical analysis showed that the intrinsic delay time of the diodes is 15 psec and that by reducing the parasitic capacitance between the electrodes faster switching will be realized in the experiment.     

High-bit-rate pulse regeneration and modulation of injection lasers with a planar Gunn device

A simple circuit with a Schottky-barrier-gate Gunn device is presented, which works as a pulse regenerator and modulator for laser diodes. Modulation depth and bias voltages of both Gunn device and laser are separately adjustable, allowing quick adaption for different laser diodes. The circuit was tested with a p.c.m. word at 1.5 Gbit/s.     

Delay structures with planar Gunn devices

A pulse delay obtained with the aid of the domain travelling effect in Gunn devices is described. For this purpose, the planar Gunn devices contain, in addition to a trigger electrode, a capacitive electrode for coupling out the signal. Experimental results are given for the single component and a monolithic integrated cascade circuit. The devices are appropriate for constructing dynamic shift registers in the sub-nanosecond range.     

Thermally induced FM noise in Gunn oscillators and jitter in Gunn-effect digital devices

By considering the starting-time fluctuation of domain formation and the fluctuation of domain-formation time caused by thermal noise, the front-edge fluctuation of the output current pulse of a Gunn device is obtained. Taking the Fourier transform of the output current-pulse train with these front-edge fluctuations, we obtain the equivalent noise-current source due to the thermal noise of Gunn oscillators. Solving Kurokawa's oscillator equation including this equivalent noise-current source, an expression for thermally induced FM noise in Gunn oscillators is derived. The result is in good agreement with experimental data. These results are applied to estimate thermally induced jitter in Gunn-effect digital devices.     

Triggering times of Gunn diodes

Based on the operating-point trajectory theory, the build-up/ quenching time of triggered Gunn domains is examined by means of a digital computer. A simple relation is given between the amplitude and time of the trigger pulse.     

Domain width in a dielectrically loaded Gunn diode

The width of the travelling high-field domain in a Gunn diode has been determined for a device with one surface loaded by a dielectric material (LiNbO3). The domain width inferred from the shape of the acoustic pulse that is generated in the adjacent piezoelectric dielectric material.