通信行业发展对经济增长的贡献

随着信息技术以及信息网络的飞速发展,通信行业对国民经济的发展有不可替代的支撑作用.本文运用实证分析的方法,从直接贡献和间接贡献两个方面,从通信运营商、通信设备制造业、信息服务业三个维度,综合分析2005-2011年通信行业发展对经济增长贡献的变化趋势及主要原因.     

浅谈通信光缆线路常见故障及维护

随着我国科学技术的快速发展,通信行业也取得了快速的进步,然而在通信行业发展的过程中由于通信光缆线路受到损伤而影响到正常的通信传输,这不仅给通信行业的发展带来了巨大的影响,同时也给人们的生活以及国民经济的增长带来了巨大的打击,因此本文将对通信光缆线路中的常见故障进行分析,在此基础上探究有效的维护方法,促进通信行业的发展.     

我国通信行业可持续发展研究

在社会主义市场经济体制改革发展不断深入的时代背景下,进一步发挥通信行业在国民经济发展中的作用,推进我国通信行业的可持续发展对于全面建成小康社会、实现中华民族伟大复兴的"中国梦"有着重要意义。文章从我国通信行业发展现状出发,探讨推动通信行业可持续发展的途径。     

梳理邮电发展脉络 服务通信现代转型 通信行业发展历程与未来展望

中国通信业的发展和改革正在进行.并不断走向深入。思考过去可以更好地服务未来!时值改革开放30周年之际.通信行业再一次面临着全新的发展机遇,解读行业变迁的历程无疑将受益于企业今后的转型与发展2008年10月31日,由江苏省通信管理局主办,中国移动江苏公司承办.原信息产业部部长吴基传主讲的《通信行业的发展历程与未来展望》讲座在南京隆重举行。吴基传老部长以资深的电信人,从通信行业的发展历程到行业主管机构的更替,从通信行业改革到几大运营公司上市.将我国通信行业三十年来的发展历程进行了深入的阐述:在寄望通信行业未来的发展时,吴基传老部长希望江苏通信行业全体同仁牢牢把握通信行业的发展趋势,加快企业转型:各企业应加强合作,应对信息通信领域新挑战,构建和谐的行业发展环境,实现共赢。本次讲座为亲身经历通信行业巨大变革带来了珍贵的历史回忆,为投身通信行业建设发展的人们上了生动的一课。老部长希望业界员工深刻认识下一代信息通信发展的走向,把握通信业发展的主动权.不断解放思想,开拓创新,为推动工业与信息化融合发展作出新贡献。     

进一步推进我国通信行业可持续发展的思考

为更好地适应我国社会主义市场经济深入发展的需要,充分发挥通信行业在支撑国民经济社会发展中的基础性、先导性作用和实现我国通信行业的持续健康发展,当前需明确通信行业持续发展总体目标;进一步完善通信行业发展的外部环境;积极发挥通信行业协会的作用;多管其下,提升通信企业整体核心竞争力等。     

"试水"期国内运营商的国际化

为什么要组织“光华评论”这样的活动呢?我们认为,通信行业作为国民经济的支柱型产业,对国家的经济建设和发展起到重要作用,作为我国通信行业的主流媒体,我们希望通过我们的言论和行动,来影响我国通信行业的发展,为我国通信行业的健康有序发展献计献策。我们的立足点是想对业界一周内发生的重大事件进行分析和评论,我们将会邀请政府、运营商、厂商、咨询机构、媒体等行业的资深人士来共同参与研讨,共同推动我国通信行业的发展。欢迎业界同仁参加“光华评论”,我们可以在这里纵论产业发展的趋势,追寻业内新闻发展的蛛丝马迹;每周三下午,“光…     

推进我国通信行业持续发展的思考

为更好地适应我国社会主义市场经济深入发展的需要,充分发挥通信行业在支撑国民经济社会发展中的基础与先导的作用,实现我国通信行业的持续健康发展,需要明确通信行业持续发展的总体目标;进一步完善通信行业发展的外部环境;积极发挥通信行业协会的作用;多管齐下,提升通信企业整体核心竞争力.     

WAPI的产业化

为什么要组织“光华评论”这样的活动呢?我们认为,通信行业作为国民经济的支柱型产业,对国家的经济建设和发展起到重要作用,作为我国通信行业的主流媒体,我们希望通过我们的言论和行动,来促进我国通信行业的发展,为我国通信行业的健康有序发展献计献策。我们的立足点是想对业界一周内发生的重大事件进行分析和评论,我们将会邀请政府、运营商、厂商、咨询机构、媒体等各方面的资深人士来共同参与研讨,共同推动我国通信行业的发展。欢迎业界同仁参加“光华评论”,我们可以在这里纵论产业发展的趋势,追寻业内新闻发展的蛛丝马迹;每周三晚18:00点,“光华评论”期待你的光临。     

"合作,创新,共赢"——2007移动通信终端产业高峰论坛精彩观点

国产手机已占全球产量近半 本次论坛上,信息产业部副部长奚国华表示,目前,通信行业的发展表现出了两大特征:一是通信的发展不仅仅是国民经济的增长,也是社会的发展;二是通信信息业的技术和业务的发展日新月异.     

资本角力下运营商“成长的烦恼”

为什么要组织“光华评论”这样的活动呢?我们认为,通信行业作为国民经济的支柱型产业,对国家的经济建设和发展起到重要作用,作为我国通信行业的主流媒体,我们希望通过我们的言论和行动,来影响我国通信行业的发展,为我国通信行业的健康有序发展献计献策。我们的立足点是想对业界一周内发生的重大事件进行分析和评论,我们将会邀请政府、运营商、厂商、咨询机构、媒体等行业的资深人士来共同参与研讨,共同推动我国通信行业的发展。欢迎业界同仁参加“光华评论”,我们可以在这里纵论产业发展的趋势,追寻业内新闻发展的蛛丝马迹;每周三下午,“光华评论”期待你的光临。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Call for Papers

正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its