双忆阻Shinriki振荡器的超级多稳态和反单调性分析

本文通过在Shinriki振荡器中引入一个有源荷控忆阻,并且利用一个含绝对值项的磁控忆阻代替原电路中的串并联二极管回路,提出了一种含双忆阻器的Shinriki振荡器.根据电路拓扑结构图建立了忆阻振荡器的数学模型,开展了振荡器随电路元件参数变化时的共存分岔、周期-混沌状态转移等动力学特性分析.结果表明,双忆阻Shinriki振荡器对忆阻的参数值和初始条件有极大的依赖性,随着忆阻参数值和初始条件在特定域内变化,振荡器将呈现出共存反单调现象、不完全对称行为、超级多稳态等非线性动力学行为.此外,基于FPGA开发板完成了双忆阻Shinriki振荡器的数字电路仿真,在示波器上捕捉实验波形,验证了动力学分析的正确性.     

基于文氏振荡器的忆阻混沌电路

该文采用文氏桥振荡器和磁通控制的分段线性忆阻器,设计了一种新的单一参数控制的混沌电路。通过调节控制参数,该系统在忆阻器的非线性作用下,通过倍周期分岔产生了混沌和超混沌现象。利用常规的动力学分析手段研究了电路参数变化时系统的动力学特性,例如平衡点稳定性分析,李雅普诺夫指数谱和分岔图。为了验证电路的正确性,该文采用集成运放和压控开关实现了一个分段线性磁控忆阻器的模拟等效电路,并将该系统应用于提出的混沌电路,Pspice仿真结果与理论分析完全吻合。     

忆阻高通滤波电路准周期与混沌环面簇发振荡及慢通道效应

该文提出了一种忆阻高通滤波电路,它是由有源高通RC滤波器与二极管桥级联LC振荡器的忆阻模拟器并联耦合组成的。该文建立了电路方程与系统模型。基于分岔图、相平面图、庞加莱映射等数值仿真,开展了以反馈增益为可调参数的分岔分析,揭示了忆阻高通滤波电路中存在的准周期、混沌环面、混沌和多周期等簇发振荡行为。进一步地,通过快慢分析法,导出了快子系统的Hopf分岔集,并进而阐述了忆阻高通滤波电路慢通道效应的形成机理。最后,基于Multisim电路仿真验证了数值仿真结果。     

简洁无电感忆阻混沌电路及其特性

采用非理想有源电压控制忆阻器和磁通控制型光滑3次非线性忆阻器,该文设计了一种不含电感的简单(只含5个电子元器件)双忆阻混沌电路。采用常规的非线性分析手段详细研究了电路参数变化时系统的基本动力学行为,例如平衡点稳定性分析,相轨图以及李雅普诺夫指数谱和分岔图等。通过调节系统控制参数,该系统可产生多涡卷、多翼以及暂态混沌等十分丰富的动力学现象。此外,还研究了系统依赖于忆阻器初始状态的多稳态,得到了一些有意义的结果。为验证电路的可行性及稳定性,通过对忆阻器的模拟等效电路的搭建,并将该等效电路应用于所提出的混沌电路中,硬件电路实验结果以及Multisim电路仿真结果与理论分析一致。     

基于忆阻器的低通滤波器设计

忆阻器是一种新型的非线性二端无源器件,具有电阻、电容和电感所不具备的记忆特性.使用忆阻器和由忆阻器构成的忆容等效电路设计了二阶无源低通滤波电路和有源低通滤波电路.SPICE仿真实验结果证实了设计的可行性.所设计的低通滤波电路在电路参数调整和稳定性方面相比于传统的低通滤波电路具有较大的优势.     

磁控二氧化钛忆阻混沌系统及其电路设计

忆阻器是一种非线性电子元件,可以作为混沌系统的非线性部分,为了提高混沌系统的信号随机性和复杂度,构建了一个磁控二氧化钛忆阻混沌系统。从系统的对称性、耗散度、平衡点稳定性、Lyapunov指数谱和维数、功率谱、庞加莱截面等方面来研究该混沌系统的内在动力学特性。采用双参数影响下的混沌图和复杂度分析方法得到了系统的最优参数范围,同时搭建了基于Multisim的忆阻混沌电路,采用改进型模块化设计来产生混沌信号。实验仿真结果表明,该忆阻混沌系统在最优参数范围下的多稳态共存特性显著,具有丰富的动力学行为,模拟电路验证了该忆阻混沌系统的可实现性,为进一步研究忆阻器混沌系统在图像、音频、文本保密处理中的应用提供了实验基础。     

忆阻器混沌电路的仿真

本文介绍了HP忆阻器的基本概念及数学模型,该模型可以较好地表示HP忆阻器的非线性掺杂漂移性质,将忆阻器用于蔡氏电路,可以得到基于忆阻器的混沌电路。笔者使用Matlab进行系统级仿真,并简要地进行了动力学分析。建立了忆阻器的Orcad模型,对其进行了仿真实验,其结果与HP实验室相同。我们用Orcad进行器件级仿真,为实际的混沌电路提供基础。该数值仿真和电路仿真结果一致,表明该混沌电路是可行的。     

基于忆阻元件的五阶混沌电路研究

采用一个有源磁控忆阻器替换四阶蔡氏振荡器中的蔡氏二极管,导出了一个基于忆阻元件的五阶混沌电路,建立了相应电路状态变量的微分方程组.理论分析表明该忆阻混沌电路具有一个平衡点集,其稳定性随忆阻器初始状态变化而变化.采用常规的动力学分析手段研究了忆阻器初始状态发生变化时电路的动力学特性.数值仿真结果验证了理论分析的正确性.     

频率负阻效应与复合振荡器

本文利用转动变换推导出五种典型放大电路的负阻条件;利用负阻效应特有的复合振荡现象取得了扩展振荡频带、增强振幅的效果;从而表明,在反馈振荡器与负阻振荡器之间存在可供实用的第三种振荡形式。     

互耦合张弛振荡器的“同步尖角”模型

本文提出了称为“同步尖角”的模型，首次用来研究互耦合张弛振荡器的特性，把本来复杂的动力学计算问题变成了简单的几何计算问题，成功地分析了这种非线性动力学系统的同步现象。利用双向负阻晶体管的外部控制特性，实现了强控制同步互耦合张地振荡实验电路，实验结果与分析符合甚好，表明这种分析方法是正确有效的。     

Third-order RLCM-four-elements-based chaotic circuit and its coexisting bubbles

This paper presents a new third-order RLCM-four-elements-based chaotic circuit, in which the memristor element is equivalently implemented by a diode-bridge cascaded with an inductor. Mathematical model is established and its equilibrium stability is analyzed. The dynamical properties of the memristive chaotic circuit are disposed by MATLAB numerical simulations and confirmed by breadboard experimental measurements. In particular, the antimonotonicity phenomena of coexisting periodic and chaotic bubbles are observed under some specified control system parameters and the evolutions of coexisting bubbles are exhibited with the variations of two control system parameters. The presented memristive chaotic circuit is very simple and only third-order but can emerge complex dynamics with chaos, period, coexisting bifurcation modes, and coexisting bubbles.     

On the generalization of composite memristive network structures for computational analog/digital circuits and systems

The unique adaptive properties of memory resistors (memristors) are ideal for use in computational architectures. Multiple interconnected memristors demonstrate complicated overall behavior which significantly improves the efficiency of logic operations via massive parallelism. Nowadays, within an ever-growing variety of memristive systems, most of the research has so far focused on the properties of the individual devices; little is known about the extraordinary features of complex memristive networks and their application prospects. The composite characteristics of regular and irregular memristive networks are explored in this work. A generalized concept for the construction of composite memristive systems, efficiently built out of individual memristive devices, is presented. A new type of threshold-dependent programmable memristive switches, presenting different electrical characteristics from their structural elements, is proposed. As an example of the introduced approach, a SPICE simulation-based evaluation of several programmable analog circuits is presented. The proposed circuit design approach constitutes a step forward towards novel memristor-based nanoelectronic computational systems and architectures.     

Exploring Multifunctionality in MgO-Based Magnetic Tunnel Junctions with Coexisting Magnetoresistance and Memristive Properties

Magnetic tunnel junctions (MTJs) and memristors are two key emerging nanotechnologies that attracted significant interest for potential applications at the forefront of the digital revolution, including sensing, data storage, and non-conventional computation. The co-integration of these phenomena into a single multifunctional device is an important step toward harnessing the re-programmability of memristive systems with the high yield and varied functionality of MTJs. This study demonstrates the co-existence of magnetoresistance and memristive properties on MgO-based MTJs. These devices show a magnetoresistance with a linear response as a function of a magnetic field and no hysteresis, which are the requirements for good magnetic field sensors, as well as demonstrating a non-volatile and quasi-analogue memristive behavior as a function of an applied electrical field down to nanosecond pulses. Furthermore, by doping the oxide barrier, the memristive power consumption is lowered by 20% giving the multi-functionality of the devices a promising scalability potential. This study also shows that, memristive switching can be reversibly used to completely suppress and recover the spintronic functionalities. These results can pave the way for a seamless co-integration of memristors and spintronic devices in complex reprogrammable circuits addressing applications such as reprogrammable multifunctional field sensor arrays and neuromorphic computing.     

Design of a DTCTGAL circuit and its application

By research on the switch-signal theory for multiple-valued logic circuits, the theory of three essential elements and the principle of adiabatic circuits, a design scheme for a double power clock ternary clocked transmission gate adiabatic logic (DTCTGAL) circuit is presented. The energy injection and recovery can be conducted by the bootstrapped NMOSFET, which makes the circuit maintain the characteristics of energy recovery as well as multiple-valued input and output. An XOR/XNOR circuit based on DTCTGAL is also presented using this design scheme. Finally, using the parameters of a TSMC 0.25 μm CMOS device, PSPICE simulation results indicate that the proposed circuits have correct logic and significant low power characteristics.     

微分型单稳态触发器的Multisim分析

基于探索微分型单稳态触发器仿真实验技术的目的,采用Multisim10仿真软件对微分型单稳态触发器的工作波形进行了仿真实验测试,给出了Multisim仿真实验方案,分析了电路由稳态进入暂态、暂态期间电容C充电、暂态结束电容C放电恢复、返回稳态的工作过程,给出缩短恢复时间的改进设计方案。结论是仿真实验可直观形象地描述微分型单稳态触发器的工作特性,有利于系统地研究电路的构成及设计。     

New grounded passive elements-based external multiplier-less memelement emulator to realize the floating meminductor and memristor

A novel memelement emulator configuration has been reported in the presented work. This proposed configuration can be used to realize the function of a floating meminductor as well as the memristor element through proper selection of employed passive elements. The presented emulator circuit is based on MVDCC (modified VDCC) and OTA, which are CMOS implemented electronically tunable ABBs (Active Building Blocks). The designed circuit employs only two ABBs and three grounded passive elements. As per the knowledge of the authors, no such emulation configuration with a floating architecture has been reported so far, which can realize the behaviour of two mem-elements without the use of any external multiplier IC/circuitry, passive inductor or mutation through any externally employed memelement. It can be considered as a notable design feature along with its other advantages like electronically/resistively tunable emulated response and use of only grounded passive elements. Moreover, proposed circuit has been investigated for the consideration of non-idealities and different port parasitics of employed blocks. For the verification purpose, PSPICE simulation environment with CMOS 0.18 µm TSMC technology parameters, has been selected. The functioning of the realized meminductive and memristive behaviour has also been verified through the application example circuits designed using developed emulator circuit. Afterwards, the commercial IC based realization of the proposed emulator circuit has been shown and experimental results are discussed.

     

基于双曲正切忆阻器的Duffing系统中簇发、共存分析及其DSP实现

忆阻器作为第4种基本电路元件由蔡少棠首次提出,它的提出为混沌电路的设计和工程应用提供了新思路。该文通过在Homles型Duffing系统中引入一个双曲正切忆阻模型,得到了一个新忆阻Duffing非自治系统。利用转换相图、相图、Lyapunov指数等,揭示了该系统具有振荡尖峰数目可控簇发、非完全对称双边簇发、非完全对称的簇发共存、多种周期混沌共存等新颖动力学行为。并通过分岔图及平衡点分析,研究了其簇发产生机理。采用Multisim电路仿真与数字信号处理平台(DSP)对系统进行了硬件实现,与理论分析基本一致的实验结果证明该系统是可行的且是物理可实现的。     

Altium Designer15在电路设计的应用

在电路设计中,简单电路可以用手稿或一些办公室软件来实现,但对于复杂电路来说,则需要使用专业的EDA辅助设计软件来完成,如电路原理图(Sch)与印制电路板(PCB)文件的制作等设计工作。随着电子技术的不断创新,各种新型器件层见迭出,电路变得也越来越繁杂,传统设计方法已无法完成高密度设计要求。本文以FPGA实验教学开发板的电路进行设计为例,通过使用AltiumDesigner(以下简称AD)15这款辅助设计软件进行电路设计,不仅可以增加学生学习乐趣,还能提高动手能力,为毕业以后从事同专业工作夯实基础。     

Memristive retinomorphic grid architecture removing noise and preserving edge

In this paper, special memristor circuit and memristive retina network structure for analogue image processing have been presented. The new developments on memristor element have opened various possibilities due to its being in nano-scale and having nonlinear behavior. The proposed memristor emulator consists of only one Operational Transconductance Amplifier (OTA) and two MOS transistors which are operated in sub-threshold region. The memristor fuse structure is obtained by connecting two proposed memristor emulators. In the second section of our paper, we proposed a circuit block which is composed of 16 × 16 pixels retinomorphic memristive grid to maintain a smoothed and edges preserved image. All simulation results for both proposed memristor circuits and retinomorphic grid are obtained as expected.     

Design and implementation of monostable multivibrators employing differential voltage current conveyors

In this paper, two novel application circuits utilizing the differential voltage current conveyor (DVCC) are introduced and implemented. To the best knowledge of authors, this is the first reported monostable multivibrators employing DVCC device. Each presented circuit is constructed by single DVCC as the basic active building block together with a few passive components. Both of them can be operated via a positive-edge triggering signal to generate a pulse waveform with an adjustable width. The first one is a general monostable circuit. The second design is an improved construction, which shortens the recovery time for applying the consecutive triggering signals. The circuit operations are first described and then the non-ideal issues and design considerations of the proposed circuits are discussed. To demonstrate their feasibility, the presented circuits are simulated using circuit simulation program Is-Spice. Available commercial ICs and discrete components are used to implement the prototype circuits. Simulation and experimental results agree well with the theoretical analysis.