850nm氧化物限制型VCSEL的温度特性

采用热封闭系统对850nm氧化物限制型VCSEL的温度特性进行了研究．实验证实该器件在80℃仍能正常工作,在20～80℃的温度区间内,器件的斜率效率由0.3mW/mA降到0.2mW/mA．根据阈值电流的温度依赖性得出T0=350K,器件的基模红移为0.11nm/mW,实验确定其热阻为2.02℃/mW．     

850 nm氧化限制型VCSEL研究

通过对850nm氧化限制型垂直腔面发射激光器(VCSEL)结构的研究,研制出了满足实用要求的高性能的850nm氧化限制型VCSEL.激光器12μm和16μm氧化孔径25℃的阈值电流分别为1.2mA和1.8mA,斜效率为0.58mW/mA,微分串联电阻为35Ω和25Ω,激光器具有良好的温度特性和可靠性,可应用于1.25Gbit/s数据通信.     

高斜效率高功率850nm氧化限制型垂直腔面发射激光器

报道了MOCVD生长的高性能850nm氧化限制型垂直腔面发射激光器．研制出的氧化直径为9μm的激光器25℃时的斜效率和阈值电流分别为0．82mW／mA和2．59mA，激光器在23mA时输出16mW最大光功率．氧化直径为5μm的激光器25℃时的最小阈值电流为570μA，其最大饱和光功率为5．5mW．     

自绝缘氧化限制型850nm垂直腔面发射激光器

介绍了一种制作氧化限制型垂直腔面发射激光器的新途径,自绝缘工艺.采用该工艺制作了氧化限制型850 nm VCSELs.详细地介绍了自绝缘器件的工作原理和制作流程,并对侧氧化相关参数进行了实验研究.在此基础上,制备了不同出光孔径的850 nm VCSELs器件,测得出光孔径12μm的器件最大输出功率达到10 mW,微分量...     

高斜效率高功率850nm氧化限制型垂直腔面发射激光器

报道了MOCVD生长的高性能85 0 nm氧化限制型垂直腔面发射激光器.研制出的氧化直径为9μm的激光器2 5℃时的斜效率和阈值电流分别为0 .82 m W/m A和2 .5 9m A,激光器在2 3m A时输出16 m W最大光功率.氧化直径为5μm的激光器2 5℃时的最小阈值电流为5 70μA,其最大饱和光功率为5 .5 m W.     

高斜效率高功率850nm氧化限制型垂直腔面发射激光器

报道了MOCVD生长的高性能850nm氧化限制型垂直腔面发射激光器.研制出的氧化直径为9μm的激光器25℃时的斜效率和阈值电流分别为0.82mW/mA和2.59mA,激光器在23mA时输出16mW最大光功率.氧化直径为5μm的激光器25℃时的最小阈值电流为570μA,其最大饱和光功率为5.5mW.     

894 nm高温工作氧化限制型基横模VCSEL研究

针对芯片原子钟（铯）用激光光源系统对垂直腔面发射激光器（VCSEL）模式及工作温度的需求,研制出可以高温工作的氧化限制型基横模 894.6 nm VCSEL。通过缩小VCSEL氧化孔直径至3 μm,限制VCSEL高阶横模激射,保证器件基横模低阈值电流工作。通过常温下腔模与材料增益失谐12 nm 的结构设计,使器件能够在50~65 ℃ 高温时,激射波长对准原子能级且工作模式稳定。实验所制备的VCSEL在工作温度为55 ℃、注入电流1.8 mA 时,激射波长达到 894.6 nm,边模抑制比（SMSR）大于35 dB,基横模功率为0.75 mW,具有11.4°的远场发射角。当温度为65 ℃时,器件SMSR大于25 dB,基横模功率大于0.1 mW。该高温基横模工作的VCSEL在芯片原子钟中具有重要的应用前景。     

氧化限制型795 nm垂直腔面发射激光器

单模795 nm垂直腔面发射激光器作为铷原子钟的激光光源,一般采用氧化限制结构获得单模输出。对垂直腔面发射激光器外延结构以及氧化限制孔径进行了优化设计。基于有限元分析方法,利用光纤波导理论和热电耦合模型,对氧化孔径的光学和电学限制进行了模拟,计算分析了实现单模和良好热电特性所需的氧化孔径大小。实验制备了具有不同氧化孔径的器件,并进行了功率-电流以及光谱特性测试。当氧化孔径为1.9μm时,在3～7 mA注入电流下器件始终保持单模输出,边模抑制比大于35 dB;器件保持单模输出的最大氧化孔径为3.8μm,室温下阈值电流为1 mA,最大饱和输出功率为2 mW,斜率效率为0.3 W/A,3 mA注入电流下的出射波长为790 nm,边模抑制比大于30 dB。制备的室温下单模特性良好的790 nm垂直腔面发射激光器,为实现高温下795 nm偏振稳定单模输出提供了可能。     

钨丝掩模大角度倾斜离子注入850nm垂直腔面发射激光器及其高频调制特性

采用钨丝掩模技术,通过调整制作过程中的工艺参数,研制出批量器件阈值在2mA以内,最低阈值为1.25mA的850nm垂直腔面发射激光器.同时对TO封装的器件进行了高频特性测试,结果表明3dB带宽最高为4.0GHz,在应用于光通信收发模块的商品化同类器件中处于较好的水平,适合中、高速光通信应用.     

钨丝掩模大角度倾斜离子注入850nm垂直腔面发射激光器及其高频调制特性

采用钨丝掩模技术,通过调整制作过程中的工艺参数,研制出批量器件阈值在2 m A以内,最低阈值为1.2 5 m A的85 0 nm垂直腔面发射激光器.同时对TO封装的器件进行了高频特性测试,结果表明3d B带宽最高为4 .0 GHz,在应用于光通信收发模块的商品化同类器件中处于较好的水平,适合中、高速光通信应用     

850 nm Implant-confined VCSEL Temperature Characteristics

The temperature characteristics of VCSEL using proton implantation are described, compared with its edge-emitting counterpart. Implant-confined VCSEL operation has been realized up to 120℃. These records of high operating temperature are caused by high characteristic temperature. The relevant physical mechanisms including their dependence on temperature and carrier density are considered. The temperature sensitivity of the threshold current is not strongly increasing with higher temperature.     

Degradation Behavior of 850 nm AlGaAs/GaAs Oxide VCSELs Suffered from Electrostatic Discharge

The effect of forward and reverse electrostatic discharge (ESD) on the electro‐optical characteristics of oxide vertical‐cavity surface‐emitting lasers is investigated using a human body model for the purpose of understanding degradation behavior. Forward ESD‐induced degradation is complicated, showing three degradation phases depending on ESD voltage, while reverse ESD‐induced degradation is relatively simple, exhibiting two phases of degradation divided by a sudden distinctive change in electro‐optical characteristics. We demonstrate that the increase in the threshold current is mainly due to the increase in leakage current, nonradiative recombination current, and optical loss. The decrease in the slope efficiency is mainly due to the increase in optical loss.     

High-speed modulation of 850 nm InGaAsP/InGaP strain-compensated VCSELs

High performance 850 nm InGaAsP/InGaP strain-compensated vertical cavity surface emitting lasers (VCSELs) are demonstrated with superior output characteristics and modulation bandwidths up to 12.5 Gbit/s from 25 to 85/spl deg/C.     

A new process to improve the performance of 850 nm wavelength GaAs VCSELs

In this article, we propose a new process method to improve the light output power of GaAs vertical-cavity surface-emitting lasers (VCSELs). The VCSELs with filling Al metal into the ring trench will exhibit a higher quantum efficiency and have a light output power of 1.45 times higher than those without filling Al. In addition, the trench filled with Al metal can benefit in the bonding process and behavior as a mirror to reduce the output power loss. These VCSELs show good output characteristics and high-temperature operation.     

Oxide-confined 850 nm VCSELs operating at bit rates up to 40 Gbit/s

Oxide-confined 850 nm vertical-cavity surface-emitting lasers operating at 40 Gbit/s at current densities ~10 kA/cm² are realised. The deconvoluted rise time of the device is below 10 ps and remains hardly temperature sensitive up to 100degC.     

Large aperture 850 nm VCSELs operating at bit rates up to 25 Gbit/s

Small signal modulation bandwidths in excess of 20 GHz are demonstrated for a 9 m oxide aperture VCSEL emitting at 850 nm. Open eye diagrams are obtained under large signal modulation at bit rates up to 25 Gbit/s with a bias current density of only 10 kA/cm².     

Optimum thickness of GaAs top layer in AlGaAs-based 850 nm VCSELs for 56 Gb/s PAM-4 applications

We studied the influence of GaAs top-layer thickness on the small-signal modulation response and 56 Gb/s four-level pulse-amplitude modulation eye quality of 850 nm vertical-cavity surface-emitting lasers (VCSELs). We considered the proportionality of the gain-saturation coefficient to the photon lifetime. The simulation results that employed the transfer-matrix method and laser rate equations led to the conclusion that the proportionality should be considered for proper explanation of the experimental results. From the obtained optical eyes, we could determine an optimum thickness of the GaAs top layer that rendered the best eye quality of VCSEL. We also compared two results: one result with a fixed gain-saturation coefficient and the other that considered the proportionality. The former result with the constant gain-saturation coefficient demonstrated a better eye quality and a wider optimum range of the GaAs top-layer thickness because the resultant higher damping reduced the relaxation oscillation.