基于超图模型的多域ASON损伤感知组播路由算法

如何在缺乏全局信息的条件下构建安全可靠的组 播树,是智能光网络分域管理后引入的一个新问 题。针对此问题,通过建立新型的多域智能光网络超图模型,在考虑物理或攻击损伤的约束 条件下,利用 基于超路径的域间超树构建方法,结合K最短路径策略,提出了 一种基于超图模型的多域ASON损伤感知 组播路由算法,并进行了实例分析。本文算法在完成多域组播路由建立与波长分配的同时, 具有较低的时间复杂度。通过测量K值、组播规 模、波长数量及分配策略、域数量对网络平均连接阻塞率的影响,实验结果表明,本文算法 是有效的且取得了较好的阻塞性能,同时建议多域ASON组播规模大小应与域的数量保持一 定的比例均衡。     

基于非精确状态信息的QoS组播路由算法

提出了一种在非精确网络状态信息下满足时延和带宽约束的最小代价组播路由算法。基于非精确网络下门限更新策略，提出一种将安全性和组播树代价相结合的路径选择函数。模拟多组播业务的仿真结果表明．该算法所得组播树的代价最优，而且请求接受率较高，反映了该算法同时具有较好的QoS能力和负载均衡能力。     

WDM格型光网络中的动态组播共享保护算法

该文针对WDM格型网络中单链路失效的情况,提出了一种保护动态组播业务的基于路径的优化共享保护(PB-OSPM)算法。该算法在基于最优路径对的共享不相交路径(OPP-SDP)算法的基础上,通过引入保护波长使用情况矩阵和波长预留矩阵记录预留波长资源的使用情况,允许不发生冲突的不同组播的保护路径间共享预留波长资源。研究采用欧洲光网络(EON)的拓扑对PB-OSPM算法和OPP-SDP算法在增性网络负载情况下的网络冗余度和同波长资源配置和网络负载情况下动态网络负载的网络连接阻塞率做了仿真。结果表明,相同条件下,PB-OSPM算法比OPP-SDP算法有更低的连接阻塞率。组播业务间波长资源的共享是提高波长资源利用率的有效方法。     

一种非精确状态下满足多QoS约束的 动态组播路由算法

提出了一种非精确状态下满足多QoS约束的动态组播路由算法——DMIQ,该算法采用改进的BF算法作为路径搜索算法,WFQ作为分组调度机制,链路延迟不确定且服从均匀分布,能在非精确状态且满足带宽、延迟抖动和丢包率约束的前提下确定具有最小跳数和开销的动态组播路由.仿真实验表明,DMIQ能在非精确状态且满足多QoS约束的前提下建立动态组播路由,在路由请求平均成功率、平均延迟和平均跳数等衡量指标下表现出良好的性能.     

一种基于计算智能的组播路由算法

在通信网络中,多约束组播通信是提高网络运行效率和服务质量的重要途径。一些启发式的算法已经被用来解决多约束条件下的组播路由问题,如模拟退火算法,遗传算法,蚁群算法和粒子群优化算法等。然而,这些算法在求解多约束组播路由问题时存在收敛速度低和计算复杂度高的问题。萤火虫群优化(GSO)算法是一种近期在计算智能领域出现的卓越算法,它可以在一定程度上解决多约束组播树生成过程中收敛速度低和计算复杂度高的问题。提出了一种基于GSO的多约束组播树生成算法(GSO-MCM)。该算法可有效生成满足多约束要求的组播路由树。仿真结果表明提出的GSO-MCM算法在求解和收敛速度,以及网络规模适应性方面均有良好的性能。     

WSN低功耗低时延路径式协同计算方法

针对云计算应用于无线传感器网络(Wireless Sensor Network,WSN)时延敏感型业务时存在的高传输时延问题,提出了一种WSN低功耗低时延路径式协同计算方法。该方法基于一种云雾网络架构开展研究,该架构利用汇聚节点组成雾计算层;在数据传输过程中基于雾计算层的计算能力分步骤完成任务计算,降低任务处理时延;由于汇聚节点计算能力较弱,时延降低将导致能耗增加,WSN工作寿命减短,为此提出能耗约束下的任务映射策略,并利用离散二进制粒子群优化(Binary Particle Swarm Optimization,BPSO)算法解决能耗约束下的时延优化问题。仿真结果表明,在相同的能耗约束下,对比其他算法,基于BPSO算法得出的映射方案能有效降低业务处理时延,满足时延敏感型业务的需求。     

一种新的QoS组播路由算法

针对现有的求解多约束QoS组播路由中存在的问题,结合BP神经网络局部搜索的优势和蚁群算法全局搜索的优势的特点,进行QoS组播路由算法的设计,提出了一种新型的NNAC算法。该算法通过BP神经网络寻找路径的更优解,改善了QoS组播路由路径寻找的方法。通过实验仿真表明,NNAC算法得到最优组播树的总延时为35,总代价费用为21,在完成150个度约束组播路由路径时,NNAC算法在进行最优组播树的寻找成功率上高于AC算法,同时该算法还克服了AC算法易陷入局部最小点的不足。     

基于自适应蚁群的多约束QoS组播路由算法

结合多约束QoS组播路由的特点,应用一种自适应蚁群优化算法解决组播路由问题.考虑到实际通信中链路利用率对网络的影响,将网络中链路的带宽转化为链路的代价问题,并在蚁群算法中根据蚂蚁所选路径的代价进行信息素更新,增加了信息素调整的自适应性,同时加快了算法的收敛速度,使得组播路由算法在考虑网络QoS约束的基础上进一步贴合实际网络的需求.     

基于网络编码的双路径组播树生成算法

 为了将网络编码技术引入到全光组播网络中,提出了能够在多项式时间完成的基于网络编码的双路径组播树生成算法.该算法主要包括两大步骤:首先,从给定的组播网络中根据节点间度平衡的原则为源节点和每个目的节点之间确定一条有向路径,从而建立一棵传统有向树并保证有向树中任意节点的出度尽可能小,减少节点之间的关联性;其次,在所建立的传统有向树的基础上,从每一个目的节点到源节点根据冲突回溯原则建立源节点和每个目的节点之间的第二条路径,并保证源节点到任意目的节点间的两条路径为分离路径.算法中包含的约束原则能够保证所建立的双路径组播树包含最少的编码节点,从而使得所建立的组播树支持光域网络编码高效率实现,实现基于网络编码的全光组播并提升全光组播的性能.     

基于多物理层损伤限制的光网络RWA算法研究

在透明光网络中,如何在选路过程中自适应地规避物理层损伤进而实现高质量的传输服务是亟待解决的问题.提出了一种面向多物理损伤约束的RWA算法,改进原有损伤感知RWA算法考虑物理损伤单一不够全面的问题,尝试将多个物理损伤作为路径选择的多个约束条件,从而可以选择损伤最小的光路来完成光连接的请求,从而满足未来高传输质量的需求.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.