AIGaN／GaN HEMT器件的高温特性

研究了AIGaN／GaN HEMT器件在室温、100℃、200℃和300℃下的工作性能。当栅长为1μm时，器件的最大漏源电流和非本征跨导在室温下的数值为1．02A／mm和230mS／mm。温度升高到100℃时几乎没有变化，温度升高到300℃时．最大漏源电流和跨导分别下降到0．69A／mm和118．25mS／mm，下降的百分比分别为：67．6％和51.4％。     

高跨导AlGaN/GaN HFET器件研究

报道了蓝宝石衬底上AlGaN/GaNHFET的制备以及室温下器件的性能。器件栅长为0.8μm,源漏间距为3μm,得到器件的最大漏电流密度为0.7A/mm,最大跨导为242.4mS/mm,截止频率(fT)和最高振荡频率(fmax)分别为45GHz和100GHz。同时器件的脉冲测试结果显示,SiN钝化对大栅宽器件的电流崩塌效应不能彻底消除。     

AlGaN/GaN HEMT器件的研制

介绍了AlGaN/GaNHEMT器件的研制及室温下器件特性的测试.漏源欧姆接触采用Ti/Al/Pt/Au ,肖特基结金属为Pt/Au .器件栅长为1μm ,获得的最大跨导为12 0mS/mm ,最大的漏源饱和电流密度为0 95A/mm .     

AlGaN/GaN HEMT器件的研制

介绍了AlGaN/GaN HEMT器件的研制及室温下器件特性的测试.漏源欧姆接触采用Ti/Al/Pt/Au,肖特基结金属为Pt/Au.器件栅长为1μm,获得的最大跨导为120mS/mm,最大的漏源饱和电流密度为0.95A/mm.     

SiN钝化对W波段AlGaN/GaN HEMT射频性能的影响

在SiC衬底上制备了栅长为110 nm、漏源间距为2μm的W波段AlGaN/GaN高电子迁移率场效应晶体管(HEMT),分析了SiN钝化对器件直流和射频特性的影响.研究发现:100 nm SiN钝化可显著提升器件的漏源饱和电流及峰值跨导,漏源饱和电流从1.27 A/mm增加至1.45 A/mm (Vgs=1 V),器件峰值跨导从300 mS/mm提升至370 mS/mm,这是由于SiN钝化显著提高了AlGaN/GaN异质结材料沟道电子浓度.此外,SiN钝化可有效抑制器件电流崩塌,显著改善器件直流回扫特性.然而,由于沟道电子浓度增大,钝化后器件中短沟效应增强,器件夹断特性变差.此外,SiN钝化后W波段AlGaN/GaN HEMTs的射频特性得到显著改善,器件的电流增益截止频率从钝化前的33 GHz提升至107 GHz,最高振荡频率从钝化前的65 GHz提升至156 GHz.     

跨导为325mS/mm的AlGaN/GaN HFET器件

报道了使用国产GaN外延材料(蓝宝石衬底)的AlGaN/GaN HFET器件的制备以及室温下器件的性能.器件栅采用场板结构,其中栅长为0.3μm,场板长为0.37μm,源漏间距为3μm.器件的饱和电流密度为0.572A/mm,最大漏电流密度为0.921A/mm,最大跨导为325mS/mm,由S参数外推出截止频率和最高振荡频率分别为27.9GHz和33.1GHz.     

4H-SiC MESFET的特性研究

对4H-SiC MESFET的特性研究发现,在室温下4H-SiC MESFET饱和漏电流的值为0.75A/mm,随着温度的上升,器件的饱和漏电流和跨导一直下降;栅长越短,沟道层掺杂浓度越高,饱和漏电流就越大.300K时器件的击穿电压为209V,计算出来的最大功率密度可达19.22W/mm.这些结果显示了4H-SiC在高温、高压、大功率器件应用中的优势.     

跨导为325mS/mm的AlGaN/GaN HFET器件

报道了使用国产GaN外延材料（蓝宝石衬底）的AlGaN/GaN HFET器件的制备以及室温下器件的性能. 器件栅采用场板结构,其中栅长为0.3μm,场板长为0.37μm,源漏间距为3μm. 器件的饱和电流密度为0.572A/mm,最大漏电流密度为0.921A/mm,最大跨导为325mS/mm,由S参数外推出截止频率和最高振荡频率分别为27.9GHz和33.1GHz.     

GaN肖特基SIT的Monte Carlo模拟

用全带多粒子Monte Carlo模拟方法研究了GaN基肖特基势垒静电感应晶体管(SIT)的特性,给出了器件的电势、电场强度和电子浓度分布的Monte Carlo模拟结果。模拟得到的SIT输出特性曲线呈现非饱和特性,即类三极管特性。当VGS=0,VDS=35 V时,漏源电流为47 A/cm,跨导为300 mS/mm,电流截至频率为150 GHz。结果表明该器件具有大电流、高跨导和高频工作的潜力。     

跨导为220mS／mm的AIGaN／GaN HEMT

介绍了AIGaN／GaN HEMT器件的研制及室温下器件特性的测试。漏源欧姆接触采用Ti／Al／Pt／Au．肖特基结金属为Pt／Au。器件栅长为1μm，获得最大跨导220mS／mm，最大的漏源饱和电流密度0．72A／ram。由S参数测量推出器件的截止频率和最高振荡频率分别为12GHz和24GHz。     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

A Versatile Mixed-Signal Pin Approach for Cost-Effective Test of Automotive ICs

Integrated circuits (ICs) intended for increasingly sophisticated automotive applications bring unique test demands. Advanced ICs for applications such as highly integrated automatic braking system (ABS) and airbag controllers combine high voltage digital channels, significant VI demands and precise timing capability. Along with continued missioncritical reliability concerns, the trend toward higher voltage operation and increased device integration requires specialized test capabilities able to extend across the wide operating ranges found in automotive applications. Among these capabilities, automotive test requirements increasingly dictate a need for a cost-effective versatile mixed-signal pin electronics with very high data rates reaching up to 50MHz with a voltage swing of-2 V to +28 V.     

Optical vibration and deviation measurement of rotating machine parts

It is of interest to get appropriate information about the dynamic behaviour of rotating machinery parts in service. This paper presents an approach of optical vibration and deviation measurement of such parts. Essential of this method is an image derotator combined with a high speed camera or a laser doppler vibrometer （LDV）.     

INTEGRATION OF OPTICAL AND WIRELESS NETWORKS

正For a long time,optical and wireless systems/net-works are developed in separate communities witha few attempts for in-depth convergence.In fact,it prom-ises many advantages to combine the optical and wire-less technologies in the levels of systems and networks.Recently,both academia and industry have made manyefforts to enter a new phase of development to take op-tical and wireless systems as fully integrated networks.To provide high bandwidth and reliable service for bothfixed and mobile users,a well-designed network must     

社长序言（英文）

正Happy New Year!As we step into a new year,we take a look back at the key feature topics covered in China Communications over the past 12 months and set out our expecta-     

云计算专题（英文）

正Cloud computing is a novel computing paradigm that utilizes remote cloud resources to achieve a high-performance computation.Cloud provides infrastructure,platform and software as different on-demand services.China has made remarkable progress in cloudbased products and operating system technology.The government,enterprises and research institutions are all active in the development of cloud computing-related projects.Despite the progress,many important problems     

Call for Papers—Feature Topic,Vol.12,No.3,2015

正Smart Grid Communications The electric power industry is undergoing profound changes as the industry aims to capture the promise of a smart grid for a sustainable energy future.Enabled by the advanced sensing devices such as Phasor Measurement Units(PMUs),increasingly powerful