基于基片集成波导的W波段基波注入锁定谐波振荡器

研制了一种基于基片集成波导的W波段平面注入锁定谐波振荡器.为了获得大的注入功率, 注入锁定谐波振荡器采用基波端口强耦合结构, 利用谐波提取技术的频率倍频作用, 自由振荡输出频率在90.2 GHz附近.当基波注入信号在45.08 GHz附近时, 锁定带宽大于120 MHz, 输出功率大于6.5 dBm.将该平面集成的注入锁定谐波振荡器与低频参考信号同步, 能够产生稳定的W波段低相噪信号.     

一种毫米波宽锁定范围的注入锁定倍频器设计

为提高毫米波段倍频器在低功耗下的工作带宽,采用IHP130 nm SiGe BiCMOS 工艺,设计了一种采用双端注入技术的毫米波宽锁定范围注入(DEI)锁定倍频器。该注入锁定倍频器主要由谐波发生器和带有尾电流源的振荡器构成,由巴伦产生差分信号双端注入振荡器的形式提高三次谐波注入强度,使其在E、W 等波段输出宽锁定范围和良好相位噪声性能的三倍频信号。仿真结果表明,注入锁定倍频器在工作电压为1.2 V,输入信号功率为0 dBm时,其锁定范围在57~105 GHz 内。在相同工作电压和输入信号功率下,输入频率为32 GHz 时,一次、二次和四次谐波抑制大于20 dBc,功耗为9.1 mW。     

一种高性能体效应管电调振荡器

本文介绍了一种高性能W波段高频端Gunn振荡器.其基波和二次谐波共用一个波导振荡腔,基波频率低于W波段波导截止频率,机械调节频宽100～115GHz,输出功率大于5mW,最大可达18.5mW,线性电调范围大于250MHz.该振荡器用于三毫米锁相系统和大型毫米波望远境2.6mm波段的锁相本振系统.     

一种S波段基于注入锁定技术高效的MOSFET大功率微波源

本文提出了一种利用不平衡耦合谐振器的反馈电路,实现高效率的S波段基于注入锁定技术高效的MOSFET振荡器,在2.45GHz可以获得203 W的输出功率和54.18%的漏极效率,其注入信号为输出信号的1/1000,锁定带宽为2.0MHz。相对于传统的大功率微波源,基于注入锁定技术高效的MOSFET振荡器,工作电压低,相位和频率可控性有明显优势,更有利于实现微波化学实验中的均匀加热以及精确的温度控制。     

基于1um磷化铟DHBT工艺的W波段推推式单片二倍频器

设计了基于1um磷化铟双异质结晶体管工艺的W波段二倍频器单片电路. 采用有源巴伦将单端输入转化为差分输出. 在推推结构的输出口端接谐振网络, 提取二次谐波. 多级差分结构提高倍频增益, 抑制基波频率. 该单片电路集成了18个双异质结晶体管, 芯片面积为 0.55毫米×0.5 毫米. 测试表明在75GHz到80GHz频率范围内, 输出功率大于5.8dBm, 基波抑制大于16dBc, 倍频增益大于4.7dB.     

基波注入锁定谐波耿氏振荡器研究

本文基于同步振荡器的非线性模型，导出了基波注入锁定二次谐波耿氏振荡器的锁定带宽表达式，完成了三毫米波段第二次谐波振荡器的基波注入锁定实验，理论分析与实验结果吻合。     

基于CMOS工艺的太赫兹振荡器

在太赫兹频段,无源器件电容电感的品质因数低、电路的寄生参数以及MOS管的截止频率影响使太赫兹振荡器电路难以实现高功率输出。提出一种300 GHz可调谐振荡器,首先,采用改进的交叉耦合双推(Push-Push)振荡器结构,通过输出功率叠加的方法输出二次谐波300 GHz信号,增加了振荡器的输出功率并突破了MOS管截止频率,并通过增加栅极互连电感增加输出功率。其次,太赫兹振荡器摒弃传统片上可变电容调谐的方式,通过调节MOS管衬底电压改变MOS管的栅极寄生电容实现频率调谐,避免太赫兹频段引入低Q值电容,进一步增加了输出功率。提出的太赫兹振荡器采用台积电40 nm CMOS工艺,基波工作频率为154.5 GHz,输出二次谐波为 309.0 GHz,输出功率可达-3.0 dBm,相位噪声为-79.5 dBc/Hz@1 MHz,功耗为28.6 mW,频率调谐范围为303.5~315.4 GHz。     

3mm波相参脉冲发射组件的研究

根据3mm波段相参脉冲雷达对发射机的要求,本文拟定了基波注入锁定3mm波谐波源、3mm波连续波雪崩源和两级脉冲雪崩源级联注入锁定的放大链路方案,提出并实施了"脉间异频防泄漏技术",抑制了漏信号对系统工作的有害影响,最终实现当输入电平为2mW的6mm波信号时,3mm波输出脉冲峰值功率大于5W,脉宽约30ns.     

六毫米波段注入锁定振荡器

本文描述一种六毫米波段注入锁定振荡器.该振荡器由耿管振荡器、环行器、锁相参考源组成,耿管振荡器采用背腔式稳频和谐振帽电路结构,输出端经环行器与高稳定度锁相源连接.注锁振荡器的输出功率大于60mW,振荡频率为46.1GHz,偏离载频10kHz处,单边带(SSB)相位噪声≤-71.7dBc/Hz,杂波≤-40dB.     

17GHz双推式介质振荡器的设计

该文设计了一个基于双推式结构的介质振荡器,输出频率为17 GHz.该振荡器由两个独立的串联反馈式介质振荡器构成.该文介绍了串联反馈式介质振荡器的详细设计过程,并且应用了理论计算简化仿真过程,提高仿真精度.在振荡器的输出端口,用宽带威尔金森功率合成器同时实现了基波和二次谐波的合成,并应用λ/4开路微带线提高了基波抑制度.由仿真结果可得到17 GHz的输出功率为3 dBm,相位噪声达到了120.8 dBc/Hz@10 kHz,基波抑制度超过了50 dBc.     

SIW-Based W-Band Low Phase-Noise Injection-Locked Harmonic Oscillator

A W-band planar injection-locked harmonic oscillator (ILHO) based on substrate integrated waveguide (SIW) is implemented. This ILHO has a free-running output frequency around 94.6?GHz while the technique of harmonic extraction from diodes is used as a frequency multiplier. It has an output locking bandwidth of 300?MHz (from 94.45 to 94.75?GHz) as injecting a signal around 47.3?GHz with the fundamental injection-locked behavior, and the output power is more than 5.8 dBm. The combination of simple synchronization with a low-frequency reference signal allows the generation of stable and low phase-noise W-band signals with a fully integrated planar source.     

A W-band Frequency Source with Low Spurs and Low Phase Noise

A W-band millimeter wave frequency source is developed by frequency multiplier chain and injection locking. The referenced crystal oscillator (CO) signal 120 MHz is multiplied 400 times to output 48 GHz signal. Then, it is used as a referenced source of fundamental-wave injection-locked harmonic Gunn oscillator with output power more than 10 mW at 96 GHz and spurious output less than ?65 dBc. The measured phase noise is ?97 and ?105 dBc/Hz at 10 kHz and 200 kHz offset, respectively. At last, the influence of the flicker noise, provided by the frequency multipliers and amplifiers, is analyzed.     

基于InP HBT工艺的高功率高谐波抑制W波段宽带八倍频器MMIC

基于0.7μm InP HBT工艺,设计实现了一种高功率高谐波抑制比的W波段倍频器MMIC。电路二倍频单元采用有源推推结构,通过3个二倍频器单元级联形成八倍频链,并在链路的输出端加入输出缓冲放大器,进一步提高倍频输出功率。常温25℃状态下,当输入信号功率为0 dBm时,倍频器MMIC在78.4~96.0 GHz输出频率范围内,输出功率大于10 dBm,谐波抑制度大于50 dBc。芯片面积仅为2.22 mm²,采用单电源+5 V供电。     

V-band harmonic injection-locked frequency divider using cross-coupled FETs

A V-band 1/2 frequency divider is developed using harmonic injection-locked oscillator. The cross-coupled field effect transistors (FETs) and low quality-factor microstrip resonator are employed as a wide-band oscillator to extend the locking bandwidth. The second harmonic of free-running oscillation signal is injected to the gates of cross-coupled FETs for high-sensitivity superharmonic injection locking. The fabricated microwave monolithic integrated circuit frequency divider using 0.15-/spl mu/m GaAs pHEMT process showed a maximum locking range of 7.4 GHz (from 65.1 to 72.5 GHz) under a low power dissipation of 100 mW. The maximum single-ended output power was as high as -3 dBm.     

A Novel SIW-Based Planar W-Band GaAs Gunn Harmonic Oscillator

Based on the substrate integrated waveguide (SIW) technology, a novel W-band low phase noise GaAs Gunn planar harmonic oscillator is developed in this paper. The technique of harmonic extraction from Gunn diodes and SIW resonant cavity structures are discussed in detail. Due to the high quality factor and planar structure of the SIW cavity resonator, the oscillator is characterized by some advantages such as low phase noise, small size, low cost and planar integration. The measured phase noise is −108.56 dBc/Hz at 1 MHz offset and the output power is more than 9 dBm at 94.78 GHz. A 300 MHz of linear tuning range with power fluctuation less than 1.5 dB is observed when the Gunn diode is biased from 4 to 5.3 V.     

W-band divide-by-3 frequency divider using 0.1 /spl mu/m InAlAs/InGaAs metamorphic HEMT technology

A W-band divide-by-3 frequency divider with wide bandwidth and low power dissipation is presented using harmonic injection-locking technique. A cascode FET is employed for a self-oscillating second-harmonic mixer which is injection-locked by third-harmonic input to obtain the division order of three. The fabricated frequency divider using 0.1 /spl mu/m GaAs metamorphic HEMT technology shows superior performance such as large bandwidth of 6.1 GHz around 83.1 GHz (7.3%) under small DC power consumption of 12 mW.     

Frequency Sources in W-band Radar Front-end with Low Phase Noise

A W-band coherent stepped-frequency pulsed radar front-end is developed. It consists of a millimetre wave transmitting source, a mm-wave local source, a DDS with multi frequency points output and two microwave sources serving as local oscillators. All the sources are coherent with the 120 MHz referenced crystal oscillator. The mm-wave sources are realized by frequency multiplier chain, up-conversion and injection locking. The phase noise of fundamental-wave injection-locked W-band harmonic Gunn oscillator output signal achieves ?98 dBc/Hz at 10 kHz offset and the spurious output is less than ?50 dBc. The received intermediate frequency signal is also presented.