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1.
    
In this study, MAPbBr3 single crystal (MSC) p‐n perovskite homojunction photodiode and n‐p‐n phototriode are successfully fabricated through controlled incorporation of Bi3+ ions in solution. Optoelectronic analysis reveals that the photodiode shows typical photovoltaic behavior and the best photovoltaic performance can be achieved when the n‐type MSC is grown in 0.3% Bi3+ feed solution. The as‐assembled p‐n MSC photovoltaic detector displays obvious sensitivity to 520 nm illumination, with a high responsivity of up to 0.62 A W‐1 and a specific detectivity of 2.16 × 1012 Jones, which surpass many those of MSC photodetectors previously reported. Further performance optimization can be realized by constructing an n‐p‐n phototriode using the same growth method. The photocurrent magnification rate of the as‐fabricated n‐p‐n phototriode can reach a maximum value of 2.9 × 103. Meanwhile, a higher responsivity of 14.47 A W‐1, specific detectivity of 4.67 × 1013 Jones, and an external quantum efficiency of up to 3.46 × 103 are achieved under an emitter–collector bias of 8 V. These results confirm that the present p‐n and n‐p‐n MSC homojunctions are promising device configurations, which may find potential application in future optoelectronic devices and systems.  相似文献   

2.
    
Metal halide perovskite have shown great potential for applications in photovoltaics, light-emitting diodes and photon detectors, mainly owing to their superb optoelectronic properties, low-cost raw materials and facile fabrication process. Although, polycrystalline perovskite thin-films have been actively investigated for preparing various optoelectronic devices, the presence of detrimental defects at grain boundaries, serious ion migration and limited stability unfortunately hinder their device performance and practical application. As a contrast, perovskite single crystals (SCs) exhibit no grain boundaries, much lower trap density and much improved stability, hence providing a more attractive choice for not only optoelectronic device applications but also fundamental research. In this review, recent progress in the growth methods of perovskite SCs is summarized, followed by giving a detailed introduction of the intrinsic properties of perovskite SCs including optical properties, defects, charge carrier dynamics, ion migration and stability. On these base, the applications of perovskite SCs in various optoelectronic devices like solar cells, photodetectors, and radiation detectors are discussed, where the relationship between the composition, device architecture and device performance is highlighted. Finally, a tentative discussion on the current challenges and future opportunities in the development of perovskite SCs and optoelectronic devices is presented.  相似文献   

3.
    
Neuromorphic visual systems based on optoelectronic synaptic devices have been recently studied to simulate the retina and visual cortex of a human being. Now it is shown that an array of optoelectronic synaptic devices based on the two-terminal structure of Si/perovskite/Au may mimic the functionalities of lateral geniculate nucleus (LGN) cells. Benefiting from the photovoltaic effect, the devices can work under a self-powered mode. Diverse synaptic functionalities such as postsynaptic current, paired-pulse facilitation/depression, spike duration-dependent plasticity, spike number-dependent plasticity, and spike rate-dependent plasticity have been simulated. By modulating the electric bias of the devices in the array the simulation of the positional and orientational recognition of the LGN cells is demonstrated.  相似文献   

4.
钟志有 《半导体光电》2007,28(4):504-506,595
采用真空热蒸镀技术制备了NPB有机半导体薄膜和单层夹心结构器件,通过透射谱测量研究了薄膜的光学能隙、折射率和消光系数等光学性质,结果表明有机半导体薄膜具有直接带隙半导体的光学性质,并且其折射率色散性质遵循单振子模型.另外,通过分析器件的电流-电压特性研究了薄膜的电导率、载流子迁移率和载流子浓度等电学性质.这些实验结果对于有机光电子器件的结构设计具有一定的参考价值.  相似文献   

5.
    
Inorganic semiconductor arrays revolutionize many areas of electronics, optoelectronics with the properties of multifunctionality and large-scale integration. Metal halide perovskites are emerging as candidates for next-generation optoelectronic devices due to their excellent optoelectronic properties, ease of processing, and compatibility with flexible substrates. To date, a series of patterning technologies have been applied to perovskites to realize array configurations and nano/microstructured surfaces to further improve device performances. Herein, various construction methods for perovskite crystal or thin film arrays are summarized. The optoelectronic applications of the perovskite arrays are also discussed, in particular, for photodetectors, light-emitting diodes, lasers, and nanogratings.  相似文献   

6.
7.
无机钙钛矿材料CsPbX3(X=Cl,Br,I)具有光吸收系数高、发射谱线宽度窄、发光效率高等优异的光电性能,与目前在光伏领域大放异彩的有机-无机杂化钙钛矿材料相比,其在化学稳定性和热稳定性方面更胜一筹。文章就CsPbBr3晶体的低温制备方法及其在光电探测器、发光二极管、激光、高能射线探测等领域的应用研究进展进行了分析和总结。  相似文献   

8.
AIN膜及其在半导体光电器件中的应用   总被引:1,自引:1,他引:0  
本文报道溅射AlN膜及其应用于半导体光电器件的实验研究结果。测定了不同条件下溅射的AlN膜厚度、淀积速率、折射率和击穿电场强度。首次用AlN膜做器件的端面保护和减反射膜以及表面钝化膜均获得成功。几种常用介质膜的实验数据对比分析表明AlN膜在半导体光电器件领域将有广阔应用前景。  相似文献   

9.
    
Bismuth (Bi3+)-included lead-free metal halide (LFMH) materials attract much attention in lighting, display, photodetectors, X-ray detectors, and photovoltaic fields, due to the tunable luminescence and optoelectronic performance in response to crystal and electronic structure, morphology, and particle sizes. This review summarizes Bi3+-included LFMH materials about their preparation approach, crystal and electronic structure properties, luminescence performance, and emerging applications. Notably, Bi3+ ions not only can act as framework cation to construct stable LFMH structure, but can also incorporate into LFMH materials as activators or sensitizers to generate remarkable luminescence tuning and band engineering. The Bi3+ effect on the luminescence and optoelectronic properties of LFMH materials, including, promotion of exciton localization, enhancement of light absorption in near-ultraviolet region, action as sensitizer ions to transfer energy to rare earth or transition metal ions and emission of highly-efficient light is systematically summarized. The proposed structure-luminescence relationship offers guidance for the optimization of current Bi3+-included LFMH materials and the exploitation of new LFMH derivatives.  相似文献   

10.
硅光电负阻器件的构成原理与分类   总被引:1,自引:0,他引:1  
将三端负阻器件与硅光电探测器相结合 ,通过新的构思成功地提出并构成了一类新型光电器件——硅光电负阻器件。文中报道了该器件构成的一般性原理 ,以及依据此构成原理确定的分类方法  相似文献   

11.
近年来一些国际权威性的电信研究组织正着手研究下一代网络的发展计划、方案和策略。未来的信息网络将发生重大的变革。面对迅速发展的信息网络,整个光电子信息领域将面临新的发展机遇与挑战。文章在简要介绍下一代网络的基础上,论述了光电子器件的发展趋势。  相似文献   

12.
ICP刻蚀技术及其在光电子器件制作中的应用   总被引:14,自引:0,他引:14  
简单介绍了ICP(inductively coupled plasma)刻蚀设备的结构和刻蚀机理,报道了ICP刻蚀硅、二氧化硅和Ⅲ—Ⅴ族材料的一些最新进展,重点介绍ICP刻蚀技术在光电子器件制作方面的进展和应用前景。  相似文献   

13.
    
How to erase sensitive data stored on memory devices quickly in an emergency has become a critical issue that needs to be addressed. Using BP-BIBB as a key template for atom transfer radical polymerization, which is prepared by the reaction of p-hydroxyphenyl-functionalized black phosphorous nanosheets (C6H4OH-BP) with 2-bromoisobutyryl bromide (BIBB), a highly soluble poly[4-(4-(3,3,4,4,5,5-hexafluoro-2-(2-methyl-5-phenylthiophen-3-yl)cyclopent-1-en-1-yl)-5-methylthiophen-2-yl)phenyl methacrylate] (PHPM)-covalently grafted BP derivative, hereafter abbreviated as PHPM-g-BP, is synthesized in situ. PHPM is a typical photochromic polymer that emits blue light under UV irradiation, while showing pale yellow under visible light illumination. By using PHPM-g-BP as an active layer, an as-fabricated transient optoelectronic memory device exhibits a nonvolatile rewritable memory effect under UV irradiation, with an ON/OFF current ratio of 3.6 × 103, a turn-on voltage of 1.60 V, and a turn-off voltage of −1.41 V. Upon visible light illumination for 10 s, all the information stored in the device is erased quickly. The observed device current drops down from 10−3 to 10−8 A rapidly.  相似文献   

14.
A novelty dispersion ultra-flattened Bragg photonic crystal fiber (PCF) has been fabricated in this paper.The fiber is composed of compound cores and periodical claddings with 11 coaxial rings.It has flattened dispersion of 8.54±1.3 ps-(nm· km)-1 in the communication wavelength range of 1460-1625 nm.Its dispersion slope alters from -0.0428 to 0.0392ps·nm-2·km-1.The low attenuation of 0.52 dB/km and low bending loss of 0.09 dB at 1550 nm of the fiber are also achieved.The Bragg PCF has enormously potential application in the fields of dense wavelength division multiplexing systems because of its superior dispersion properties and easy splicing performances.  相似文献   

15.
作为未来新型光电子器件的有源区材料,采用能带工程形成的各种半导体量子点,以其所具有的许多独特光电特性而日益显示出潜在的重要应用。着重评述了量子点激光器、量子点红外光探测器和量子点单光子发射器件在近3至5年内取得的最新进展,并对存在的问题进行了分析和讨论。最后,提出了进一步改善器件性能的几种可能途径。  相似文献   

16.
超宽带光电子芯片是下一代无线通信、先进电子信息装备中光纤传输与信号处理的关键元器件,芯片中光子、电子、电磁场之间的相互作用是决定芯片性能的核心因素。文章通过介绍超宽带光电探测器芯片、电光调制器芯片等方面的研究进展,分享课题组在破解上述核心科学问题、提高芯片性能的关键技术方案。  相似文献   

17.
    
Graphene is emerging as one of the most useful electrode materials for various organic optoelectronic devices because of its outstanding properties such as high optical transparency, excellent mechanical flexibility, good electrical conductivity, and environmental stability. Numerous synthesis and transfer techniques used to obtain large‐area and high‐quality graphene materials are demonstrated, aiming at high‐performance graphene‐based organic optoelectronic devices such as solar cells, light‐emitting diodes, and field‐effect transistors. The properties, synthesis, and transfer processes of graphene are first introduced. Recent research progress on organic optoelectronic devices with graphene bottom, top, and full electrodes is then reviewed. Finally, graphene composite electrodes integrated with other conductive materials are also summarized. All these advanced works represent important steps in the evolution of graphene electrodes and indicate a bright future for their application in organic optoelectronic devices.  相似文献   

18.
氧化锌(ZnO)具有适合基于pn结的各种光电器件,例如紫外光子探测器、发光二极管和激光二极管等应用的理想性质。虽然多年来已可获得高质量的n型ZnO,但是由于本征缺陷的自补偿效应较强等原因,稳定低阻且为p型导电的ZnO薄膜一直难于制备。通过对部分有关文献的归纳分析,主要介绍了近年来在p型掺杂方面的进展,以及不同方法制备的p型ZnO薄膜的空穴浓度、迁移率及电阻率等性能参数。  相似文献   

19.
    
Surface defects are crucial to perovskite single crystals (SCs) for versatile optoelectronic applications, whereas suffers from the intricate post-treatments and unsatisfactory reproducibility within solution growth strategy due to the residue solvent corrosion and adsorbed precursors deposition. Here, an ionic liquid, 1-butyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide (BMITFSI) is demonstrated, assisted solution growth approach for fabricating high-quality self-cleaning perovskite single crystals with no need for any post-treatment. Benefiting from the in situ assembling in crystalline surface, BMITFSI can effectively decrease the crystallographic trap density by simultaneously introducing the self-cleaning effect and optimizing the crystalline growth process. Particularly, as fabricated MAPbI3 single crystal exhibits an impressive photodetection performance with a specific detectivity of 2.83 × 1012 Jones in visible-IR spectrum and a sensitivity of 7.24 × 104 µC Gyair−1 cm−2 in X-ray detection, which is as good as the conventionally fabricated crystal with elaborate post-treatments. Based on the chemical composition independent universality, this work paves an easy but efficient route to improve the current crystallization methodology toward high-quality perovskite SCs fabrication.  相似文献   

20.
    
The efficiency of perovskite solar cells has increased to a certified value of 25.2% in the past 10 years, benefiting from the superior properties of metal halide perovskite materials. Compared with the widely investigated polycrystalline thin films, single crystal perovskites without grain boundaries have better optoelectronic properties, showing great potential for photovoltaics with higher efficiency and stability. Additionally, single crystal perovskite solar cells are a fantastic model system for further investigating the working principles related to the surface and grain boundaries of perovskite materials. Unfortunately, only a handful of groups have participated in the development of single crystal perovskite solar cells; thus, the development of this area lags far behind that of its polycrystalline counterpart. Therefore, a review paper that discusses the recent developments and challenges of single crystal perovskite solar cells is urgently required to provide guidelines for this emerging field. In this progress report, the optical and electrical properties of single crystal and polycrystalline perovskite thin films are compared, followed by the recent developments in the growth of single crystal perovskite thin films and the photovoltaic applications of this material. Finally, the challenges and perspectives of single crystal perovskite solar cells are discussed in detail.  相似文献   

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