Orientation-Engineered Small-Molecule Semiconductors as Dopant-Free Hole Transporting Materials for Efficient and Stable Perovskite Solar Cells

Crystallized p-type small-molecule semiconductors have great potential as an efficient and stable hole transporting materials (HTMs) for perovskite solar cells (PSCs) due to their relatively high hole mobility, good stability, and tunable highest occupied molecular orbitals. Here, a thienoacene-based organic semiconductor, 2,9-diphenyldinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DPh-DNTT), is thermally evaporated and employed as the dopant-free HTM that can be scaled up for large-area fabrication. By controlling the deposition temperature, the molecular orientation is modulated into a dominant face-on orientation with π–π stacking direction perpendicular to the substrate surface, maximizing the out-of-plane carrier mobility. With an engineered face-on orientation, the DPh-DNTT film shows an improved out-of-plane mobility of 3.3 × 10⁻² cm² V⁻¹ s⁻¹, outperforming the HTMs reported so far. Such orientation-reinforced mobility contributes to a remarkable efficiency of 20.2% for CH₃NH₃PbI₃ inverted PSCs with enhanced stability. The results reported here provide insights into engineering the orientation of molecules for the dopant-free organic HTMs for PSCs.     

Efficient and Scalable Large-Area Organic Solar Cells by Asymmetric Nonfullerene Acceptors Based on 9H-Indeno[1,2-b]pyrazine-2,3,8-Tricarbonitrile

It remains challenging to fabricate efficient, scalable large-area organic solar cells (OSCs) owing to the unfavorable morphology of photoactive blend films. To address this challenge, two asymmetric nonfullerene acceptors (NFAs) IPC1CN-BBO-IC2F and IPC1CN-BBO-IC2Cl are synthesized, where 12,13-bis(2-butyloctyl)-3,9-diundecyl-12,13-dihydro-[1,2,5]thiadiazolo[3,4-e]thieno[2′“,3′”:4′,5′]thieno[2′,3′:4,5]pyrrolo[3,2-g]thieno[2′,3′:4,5]thieno-[3,2-b]indole (BBO) is the molecular core, and two types of end groups are appended to its ends, namely the 9H-indeno[1,2-b]pyrazine-2,3,8-tricarbonitrile (IPC1CN) end group and one of 2-(5,6-dihalo-3-oxo-2,3-dihydro-1H-inden-1-ylidene)malononitrile end groups (IC2F or IC2Cl). These NFAs facilitate effective tuning of light absorption and energy levels, offer high carrier mobilities, and allow for the formation of appropriate morphologies. Note that these benefits apply even to large-area devices, unlike typical Y6-based NFAs. In addition, a random copolymer PM6-PBDBT(55) is synthesized and its energy levels are optimally matched with those of the asymmetric NFAs. The blade-coated 1 cm²-area OSCs based on PM6-PBDBT(55):IPC1CN-BBO-IC2Cl exhibit a PCE of 14.12%, which is higher than that of PM6-PBDBT(55)-IPC1CN-BBO-IC2F-based OSCs. More importantly, the PM6-PBDBT(55):IPC1CN-BBO-IC2Cl-based large-area (58.50 cm²) modules yield an impressive PCE of 11.28% with a small cell-to-module loss in fill factor. These results suggest that a combination of the asymmetric molecular design using the IPC1CN group and the terpolymer strategy will pave a new path for fabricating highly efficient and scalable large-area OSCs.     

Synthesis,Characterization, and Field‐Effect Transistor Performance of Thieno[3,2‐b]thieno[2′,3′:4,5]thieno[2,3‐d]thiophene Derivatives

The synthesis, characterization, and field‐effect transistor (FET) properties of a new class of thieno[3,2‐b]thieno[2′,3′:4,5]thieno[2,3‐d]thiophene derivatives are described. The optical spectra of their films show the presence of stronger interactions between molecules in the solid state. Thermal analyses reveal that the three materials are thermally stable and have no phase transitions at low temperature. The crystal structures are determined, and show π‐stacked structures and intermolecular S···S contacts. These organic materials exhibit p‐type FET behavior with hole mobilities as high as 0.14 cm² V^?1 s^?1 and an on/off current ratio of 10⁶. These results indicate that thieno[3,2‐b]thieno [2′,3′:4,5]thieno[2,3‐d]thiophene, as a linear π‐conjugated system, is an effective building block for developing high‐performance organic semiconductors.     

Morphology optimization of organic solar cells enabled by interface engineering of zinc oxide layer with a conjugated organic material

A diphenylphosphine-oxide-based conjugated organic molecule, ((1,3,5-triazine-2,4,6-triyl)tris(benzene-3,1-diyl))tris(diphenylphosphine oxide) (PO-T2T), was doped into ZnO to improve the characteristics of the electron transport layer (ETL) in inverted organic solar cells (OSCs). A series of characterization techniques were carried out to demonstrate the function of PO-T2T in film aspect, including transmittance, atomic force microscopy (AFM), transmission electron microscopy (TEM), water contact angle and grazing incidence wide angle X-ray scattering (GIWAXS). Light dependent, space-charge-limited current, exciton dissociation possibility were aimed to explore the influence of PO-T2T for internal carrier behaviors based on PTB7-Th: PC₇₁BM system. It's found that the PO-T2T doped ETLs played a role in morphology optimization of ETL and undermined the trap-assistant recombination through filling the defects ZnO itself had, simultaneously. Besides, the electron mobility was also improved. With the optimized functionalities, the OSCs' efficiency based on fullerene system Poly[4,8- bis(5-(2-Ethylhexyl)thiophen-2-yl) benzo [1,2-b:4,5-b′] dithiophene-co-3-fluorothieno [3,4-b] thiophene-2-carboxylate] (PTB7-Th): [6,6]-Phenyl C71 butyric acid methyl ester (PC₇₁BM) was improved from 9.03% to 9.84%. Finally, when this strategy was applied into another hot-topic system, poly((2,6-(4,8-bis(5-(2-ethylhexyl-3- fluoro)thiophen-2-yl)-benzo[1,2-b:4,5-b′]dithiophene))-alt-(5,5- (1′,3′-di-2-thienyl)-5′,7′-bis(2-ethylhexyl)benzo[1′,2′-c:4′,5′-c′] dithiophene-4,8-dione)) (PBDB-TF):2,2′-((2Z,2′Z)-((12,13-bis(2- ethylhexyl)-3,9-diundecyl-12,13-dihydro-[1,2,5]thiadiazolo[3,4-e] thieno[2,″3″:4′,5′]thieno[2′,3′:4,5]pyrrolo[3,2-g]thieno[2′,3′:4,5] thieno[3,2-b]indole-2,10-diyl)bis(methanylylidene))bis(5,6-difluoro-3-oxo-2,3-dihydro-1H-indene-2,1-diylidene))dimalononitrile (Y6), a high PCE of 16.34% was obtained. These results demonstrated that the PO-T2T had a positive role in OSC performance improvement.     

Dithieno[3,2‐b:2′,3′‐d]pyrrol‐Cored Hole Transport Material Enabling Over 21% Efficiency Dopant‐Free Perovskite Solar Cells

Dopant‐free hole transport materials (HTMs) are essential for commercialization of perovskite solar cells (PSCs). However, power conversion efficiencies (PCEs) of the state‐of‐the‐art PSCs with small molecule dopant‐free HTMs are below 20%. Herein, a simple dithieno[3,2‐b:2′,3′‐d]pyrrol‐cored small molecule, DTP‐C6Th, is reported as a promising dopant‐free HTM. Compared with commonly used spiro‐OMeTAD, DTP‐C6Th exhibits a similar energy level, a better hole mobility of 4.18 × 10^?4 cm² V^?1 s^?1, and more efficient hole extraction, enabling efficient and stable PSCs with a dopant‐free HTM. With the addition of an ultrathin poly(methyl methacrylate) passivation layer and properly tuning the composition of the perovskite absorber layer, a champion PCE of 21.04% is achieved, which is the highest value for small molecule dopant‐free HTM based PSCs to date. Additionally, PSCs using the DTP‐C6Th HTM exhibit significantly improved long‐term stability compared with the conventional cells with the metal additive doped spiro‐OMeTAD HTM. Therefore, this work provides a new candidate and effective device engineering strategy for achieving high PCEs with dopant‐free HTMs.     

Hole Transport Materials Based on 6,12‐Dihydroindeno[1,2‐b]fluorine with Different Periphery Groups: A New Strategy for Dopant‐Free Perovskite Solar Cells

Although several hole‐transporting materials (HTMs) have been designed to obtain perovskite solar cells (PSCs) devices with high performance, the dopant‐free HTMs for efficient and stable PSCs remain rare. Herein, a rigid planar 6,12‐dihydroindeno[1,2‐b]fluorine (IDF) core with different numbers of bulky periphery groups to construct dopant‐free HTMs of IDF‐SFXPh, IDF‐DiDPA, and IDF‐TeDPA is modified. Thanks to the contributions of the planar IDF core and the twisted SFX periphery groups, the dopant‐free IDF‐SFXPh‐based PSCs device achieves a device performance of 17.6%, comparable to the doped 2,2′,7,7′‐tetrakis(N,N‐di‐p‐methoxyphenylamine)‐9,9′‐spirobifluorene (spiro‐OMeTAD)‐based device (17.6%), with much enhanced device stability under glovebox and ambient conditions.     

Efficient and Stable Mesoscopic Perovskite Solar Cells Using PDTITT as a New Hole Transporting Layer

Stability is the main challenge in the field of organic–inorganic perovskite solar cells (PSCs). Finding low‐cost and stable hole transporting layer (HTL) is an effective strategy to address this issue. Here, a new donor polymer, poly(5,5‐didecyl‐5H‐1,8‐dithia‐as‐indacenone‐alt‐thieno[3,2‐b]thiophene) (PDTITT), is synthesized and employed as an HTL in PSCs, which has a suitable band alignment with respect to the double‐A cation perovskite film. Using PDTITT, the hole extraction in PSCs is greatly improved as compared to commonly used HTLs such as 2,2′,7,7′‐tetrakis[N,N‐di(4‐methoxyphenyl)amino]‐9,9′‐spirobifluorene (spiro‐OMeTAD), addressing the hysteresis issue. After careful optimization, an efficient PSC is achieved based on mesoscopic TiO₂ electron transporting layer with a maximum power conversion efficiency (PCE) of 18.42% based on PDTITT HTL, which is comparable with spiro‐OMeTAD‐based PSC (19.21%). Since spiro‐based PSCs suffer from stability issue, the operational stability in the PSC with PDTITT HTL is studied. It is found that the device with PDTITT retains 88% of its initial PCE value after 200 h under illumination, which is better than the spiro‐based PSC (54%).     

Versatile α,ω‐Disubstituted Tetrathienoacene Semiconductors for High Performance Organic Thin‐Film Transistors

Facile one‐pot [1 + 1 + 2] and [2 + 1 + 1] syntheses of thieno[3,2‐b]thieno[2′,3′:4,5]thieno[2,3‐d]thiophene (tetrathienoacene; TTA) semiconductors are described which enable the efficient realization of a new TTA‐based series for organic thin‐film transistors (OTFTs). For the perfluorophenyl end‐functionalized derivative DFP‐TTA , the molecular structure is determined by single‐crystal X‐ray diffraction. This material exhibits n‐channel transport with a mobility as high as 0.30 cm²V^?1s^?1 and a high on‐off ratio of 1.8 × 10⁷. Thus, DFP‐TTA has one of the highest electron mobilities of any fused thiophene semiconductor yet discovered. For the phenyl‐substituted analogue, DP‐TTA , p‐channel transport is observed with a mobility as high as 0.21 cm²V^?1s^?1. For the 2‐benzothiazolyl (BS‐) containing derivative, DBS‐TTA , p‐channel transport is still exhibited with a hole mobility close to 2 × 10^?3 cm²V^?1s^?1. Within this family, carrier mobility magnitudes are strongly dependent on the semiconductor growth conditions and the gate dielectric surface treatment.     

Fused Thiophene Semiconductors: Crystal Structure–Film Microstructure Transistor Performance Correlations

The molecular packing motifs within crystalline domains should be a key determinant of charge transport in thin‐film transistors (TFTs) based on small organic molecules. Despite this implied importance, detailed information about molecular organization in polycrystalline thin films is not available for the vast majority of molecular organic semiconductors. Considering the potential of fused thiophenes as environmentally stable, high‐performance semiconductors, it is therefore of interest to investigate their thin film microstructures in relation to the single crystal molecular packing and OTFT performance. Here, the molecular packing motifs of several new benzo[d,d′]thieno[3,2‐b;4,5‐b′]dithiophene ( BTDT ) derivatives are studied both in bulk 3D crystals and as thin films by single crystal diffraction and grazing incidence wide angle X‐ray scattering (GIWAXS), respectively. The results show that the BTDT derivative thin films can have significantly different molecular packing from their bulk crystals. For phenylbenzo[d,d′]thieno[3,2‐b;4,5‐b′]dithiophene ( P‐BTDT ), 2‐biphenylbenzo[d,d′]thieno‐[3,2‐b;4,5‐b′]dithiophene ( Bp‐BTDT ), 2 ‐naphthalenyl benzo[d,d′]thieno[3,2‐b;4,5‐b′]dithiophene ( Np‐BTDT ), and bisbenzo[d,d′]thieno[3,2‐b;4,5‐b′]dithiophene ( BBTDT ), two lattices co‐exist, and are significantly strained versus their single crystal forms. For P‐BTDT , the dominance of the more strained lattice relative to the bulk‐like lattice likely explains the high carrier mobility. In contrast, poor crystallinity and surface coverage at the dielectric/substrate interface explains the marginal OTFT performance of seemingly similar PF‐BTDT films.     

Boosting the performance and stability of perovskite solar cells with phthalocyanine-based dopant-free hole transporting materials through core metal and peripheral groups engineering

Three novel dopant-free hole-transporting materials (HTMs) based on phthalocyanine core containing (4-methyl formate) phenoxy or (4-butyl formate) phenoxy as the peripheral groups with cupper or zinc as the core metals (CuPcNO₂-OMFPh, CuPcNO₂-OBFPh, ZnPcNO₂-OBFPh) were designed and synthesized. All of the phthalocyanine complexes show excellent thermal stabilities, appropriate energy levels and suitable hole mobilities. The potential of three HTMs were tested in perovskite solar cells (PSCs) and ZnPcNO₂-OBFPh based PSC obtained power conversion efficiency (PCE) of 15.74% under 100 mA cm⁻² standard AM 1.5G solar illumination. Most important of all, PSC based on ZnPcNO₂-OBFPh shows better stability than that of the other two phthalocyanines and Spiro-OMeTAD under continuous light irradiation at 60 °C and maximum power point tracking in ambient air without encapsulation after 500 h. The results show that the introduction of appropriate peripheral groups and core metals can improve the performance and stability of PSCs dramatically, which provides an alternative way to develop HTMs for efficient and stable PSCs.     

Sub-Band Filling and Hole Transport in Polythiophene-Based Electrolyte-Gated Transistors: Effect of Side-Chain Length and Density

The relationship between hole density and conductivity in electrochemically gated polythiophene films is examined. The films are  integrated into electrolyte-gated transistors (EGTs), so that hole accumulations can be electrochemically modulated up to ≈0.4 holes per thiophene ring (hpr). Polythiophenes include poly(3-alkylthiophenes) (P3ATs) with four different side chain lengths – butyl (P3BT), hexyl (P3HT), octyl (P3OT), or decyl (P3DT) – and poly[2,5-bis(3-dodecylthiophen-2-yl)thieno[3,2-b]thiophene] (PBTTT) and poly(3,3′′′-didodecyl[2,2′:5′,2′′:5′′,2′′′-quaterthiophene]-5,5′′′-diyl) (PQT). Analysis of the drain current – gate voltage (I_D–V_G) and gate current – gate voltage (I_G–V_G) characteristics of the EGTs reveals that all six polythiophene semiconductors exhibited reversible conductivity peaks at 0.12 – 0.15 hpr. Conductivity is suppressed beyond ≈0.4 hpr.The maximum carrier mobilities of the P3AT semiconductors increase, and hysteresis of the conductivity peaks decreases, with increasing alkyl side-chain length. PBTTT and PQT with reduced side chain densities exhibit the largest hysteresis but have higher hole mobilities. The results suggest that at ≈0.4 hpr, a polaronic sub-band is filled in all cases. Filling of the sub-band correlates with a collapse in the hole mobility. The side-chain dependence of the peak conductivity and hysteresis further suggests that Coulombic ion-carrier interactions are important in these systems. Tailoring ion-carrier correlations is likely important for further improvements in transport properties of electrochemically doped polythiophenes.     

High mobility ambipolar organic field-effect transistors with a nonplanar heterojunction structure

Ambipolar organic field-effect transistors (OFETs) based on a bilayer structure of highly crystalline small molecules, n-type α,ω-diperfluorohexylquaterthiophene (DFH-4T) and p-type dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT), are investigated. By employing DFH-4T/DNTT as the bottom/top layers and appropriate high work function (WF) electrodes in a bottom-gate, top-contact configuration, the superior ambipolar characteristics with matched electron and hole mobilities of 1–1.1 cm² V⁻¹ s⁻¹ are achieved. Intriguingly, this high-performance device exhibits a unique feature of an extremely rough, nonplanar heterojunction in the DFH-4T/DNTT combination and a large electron injection barrier from the high WF electrodes to DFH-4T, suggesting some underlying mechanisms for the effective charge transport and injection. The electrical and structural analyses reveal that the crystal packing of the bottom DFH-4T layer supports the growth of a high-quality DNTT crystal network for high-mobility hole transport upon the nonplanar heterojunction, and also enables the formation of an enlarged organic/metal contact surface for efficient electron injection from the high WF electrodes, as the key attributes leading to an overall excellent ambipolar behavior. The effect of intrinsic charge accumulation at the heterojunction interface on the ambipolar conduction is also discussed. Furthermore, a complementary-like inverter constructed with two DFH-4T/DNTT ambipolar OFETs is demonstrated, which shows a gain of 30.     

Novel D-A-D type small-molecular hole transport materials for stable inverted perovskite solar cells

Hole transport materials (HTMs), as a critical role in the hole extraction and transportation processes, highly influence the efficiency and stability of perovskite solar cells (PSCs). Despite that several efficient dopant-free HTMs have been reported, there is still no clear structure-property relationship that could give instructions for the rational molecular design of efficient HTMs. Thus, in this work, a series of donor–acceptor-donor (D–A–D) type carbazole-based small molecules, TM-1 to TM-4, have been carefully designed and synthesized. By varing the electron acceptor unit from benzene to pyridine, pyrazine and diazine, their packing structure in single crystals, optical and electronic properties have shown a great difference. While as dopant-free HTM in p-i-n type PSCs, TM-2 improved the device photovoltaic performance with a power conversion efficiency from 15.02% (based on PEDOT:PSS) to 16.13%. Moreover, the unencapsulated device based on TM-2 retains about 80% of its initial efficiency after 500 h storage in ambient environment, showing the superior stability.     

A new diketopyrrolopyrrole-based co-polymer for ambipolar field-effect transistors and solar cells

A new thieno[3,2-b]thiophenediketopyrrolopyrrole-benzo[1,2-b:4,5-b′]dithiophene based narrow optical gap co-polymer (PTTDPP-BDT) has been synthesized and characterized for field-effect transistors and solar cells. In field-effect transistors the polymer exhibited ambipolar charge transport behaviour with maximum hole and electron mobilities of 10⁻³ cm² V⁻¹ s⁻¹ and 10⁻⁵ cm² V⁻¹ s⁻¹, respectively. The respectable charge transporting properties of the polymer were consistent with X-ray diffraction measurements that showed close molecular packing in the solid state. The difference in hole and electron mobilities was explained by density functional theory calculations, which showed that the highest occupied molecular orbital was delocalized along the polymer backbone with the lowest unoccupied molecular orbital localized on the bis(thieno[3,2-b]thiophene)diketopyrrolopyrrole units. Bulk heterojunction photovoltaic devices with the fullerene acceptor PC₇₀BM were fabricated and delivered a maximum conversion efficiency of 3.3% under AM1.5G illumination.     

Improving performance of polymer solar cells based on PSBTBT/PC71BM via controlled solvent vapor annealing

Controlled solvent vapor annealing (C-SVA) is a powerful tool to control the morphology for high performance polymer solar cells (PSCs). In this work, the PSCs employed a blend of poly[(4,4′-bis(2-ethylhexyl)dithieno[3,2-b:2′,3′-d]silole)-2,6-diyl-alt-(2,1,3-benzothiadiazole)-4,7-diyl] (PSBTBT) and [6,6]-phenyl-C71-butyric acid methyl ester (PC₇₁BM) is used to show this case. The solar cells upon C-SVA give Power Conversion Efficiency (PCE) of 5.40%, in contrast to 4.14% for the pristine and 4.70% for the thermally annealed devices. The increased PSBTBT concentration on the bottom surface of the C-SVA treated film favors charge carriers transportation to the anode, which contributes to the increased hole mobility of the photoactive layer and thus the device performance.     

Fused Cyclopentadithienothiophene Acceptor Enables Ultrahigh Short‐Circuit Current and High Efficiency >11% in As‐Cast Organic Solar Cells

A new method to synthesize an electron‐rich building block cyclopentadithienothiophene (9H‐thieno‐[3,2‐b]thieno[2″,3″:4′,5′]thieno[2′,3′:3,4]cyclopenta[1,2‐d]thiophene, CDTT) via a facile aromatic extension strategy is reported. By combining CDTT with 1,1‐dicyanomethylene‐3‐indanone endgroups, a promising nonfullerene small molecule acceptor (CDTTIC) is prepared. As‐cast, single‐junction nonfullerene organic solar cells based on PFBDB‐T: CDTTIC blends exhibit very high short‐circuit currents up to 26.2 mA cm^?2 in combination with power conversion efficiencies over 11% without any additional processing treatments. The high photocurrent results from the near‐infrared absorption of the CDTTIC acceptor and the well‐intermixed blend morphology of polymer donor PFBDB‐T and CDTTIC. This work demonstrates a useful fused ring extension strategy and promising solar cell results, indicating the great potential of the CDTT derivatives as electron‐rich building blocks for constructing high‐performance small molecule acceptors in organic solar cells.     

Dopant Engineering for Spiro-OMeTAD Hole-Transporting Materials towards Efficient Perovskite Solar Cells

One of the most prominent hole-transporting material (HTM) for hybrid perovskite solar cells has been 2,2″,7,7″-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9′-spirobifluorene (spiro-OMeTAD), which is commonly doped with metal bis(trifluoromethylsulfonyl)imide (M(TFSI)_n) salts that contribute to generating the active radical cation HTM species. The underlying role of the metal cation, however, remains elusive. Here, the effect of metal cations (M = Li, Zn, Ca, Cu, and Sc) on doping spiro-OMeTAD is analyzed by a combination of techniques, including electron paramagnetic resonance spectroscopy and cyclic voltammetry, which is complemented by photovoltaic device and hole mobility analysis. As a result, the authors reveal the superiority of Zn(TFSI)₂ salts in device performances as compared to the others, including redox-active Cu(TFSI)₂. This analysis thereby unravels new design principles for dopant engineering in HTMs for hybrid perovskite photovoltaics.     

Highly Stable n–i–p Structured Formamidinium Tin Triiodide Solar Cells through the Stabilization of Surface Sn2+ Cations

Improving the performance, reproducibility, and stability of Sn-based perovskite solar cells (PSCs) with n–i–p structures is an important challenge. Spiro-OMeTAD [2,2′,7,7′-tetrakis(N,N-di-p-methoxyphenyl-amine)9,9′-spirobifluorene], a hole transporting material (HTM) with n–i–p structure, requires the oxygen exposure after addition of Li-TFSI [Lithium bis(trifluoromethanesulfonyl)imide] as a dopant to increase the hole concentration. In Sn-based PSC, Sn²⁺ is easily oxidized to Sn⁴⁺ under such a condition, resulting in a sharp decrease in efficiency. Herein, a formamidinium tin triiodide (FASnI₃)-based PSCs fabricated using DPI-TPFB [4-Isopropyl-4′-methyldiphenyliodonium tetrakis(pentafluorophenyl)borate] instead of Li-TFSI are reported as a dopant in Spiro-OMeTAD. The DPI-TPFB enables the fabrication of PSCs with an efficiency of up to 10.9%, the highest among FASnI₃-based PSCs with n–i–p structures. Moreover, ≈80% of the initial efficiency is maintained even after 1,597 h under maximum power point tracking conditions. In particular, the encapsulated device does not show any decrease in efficiency even after holding for 50 h in the 85 °C/85% RH condition. The high efficiency and excellent stability of PSCs prepared by doping with DPI-TPFB are attributed to not only increasing electrical conductivity by acting as a Lewis acid, but also stabilizing Sn²⁺ through coordination with Sn²⁺ on the surface of FASnI₃.     

Dopant‐Free Spiro‐Triphenylamine/Fluorene as Hole‐Transporting Material for Perovskite Solar Cells with Enhanced Efficiency and Stability

Chemical doping is often used to enhance electric conductivity of the conjugated molecule as hole‐transporting material (HTM) for the application in optoelectronics. However, chemical dopants can promote ion migration at the electrical field, which deteriorates the device efficiency as well as increases the fabrication cost. Here, two star HTMs, namely 2,2′,7,7′‐tetrakis(N,N‐di‐p‐methoxyphenyl‐amine) 9,9′‐spirobifluorene (Spiro‐OMeTAD) and poly(triarylamine) are subjeted to chemical combination to yield dopant‐free N2,N2,N2′,N2′,N7,N7,N7′,N7′‐octakis(4‐methoxyphenyl)‐10‐phenyl‐10H‐spiro[acridine‐9,9′‐fluorene]‐2,2′,7,7′‐tetraamine (SAF‐OMe). The power conversion efficiencies (PCEs) of 12.39% achieved by solar cells based on pristine, dopant‐free SAF‐OMe are among the highest reported for perovskite solar cells and are even comparable to devices based on chemically doped Spiro‐OMeTAD (14.84%). Moreover, using a HTM comprised of SAF‐OMe with an additional dopant results in a record PCE of 16.73%. Compared to Spiro‐OMeTAD‐based devices, SAF‐OMe significantly improves stability.     

An Electron Acceptor with Broad Visible–NIR Absorption and Unique Solid State Packing for As‐Cast High Performance Binary Organic Solar Cells

A novel acceptor–donor–acceptor (A–D–A) type electron acceptor 6TIC‐4F with terthieno[3,2‐b]thiophene (6T) as the core unit is rationally designed and synthesized, which exhibits an extraordinarily narrow bandgap (≈1.24 eV) and strong absorption between 650 and 1000 nm. X‐ray crystallographic analysis reveals that it has unique intermolecular π–π stacking. The solar cells based on the as‐cast poly[(2,6‐(4,8‐bis(5‐(2‐ethylhexyl)thiophen‐2‐yl)‐benzo[1,2‐b:4,5‐b′]dithiophene))‐alt‐(5,5‐(1′,3′‐di‐2‐thienyl‐5′,7′‐bis(2‐ethylhexyl)benzo[1′,2′‐c:4′,5′‐c′]dithiophene‐4,8‐dione))]) (PBDB‐T): 6TIC‐4F binary blends exhibit an excellent power conversion efficiency (PCE) of 11.14% with a high J_SC of 23.00 mA cm^?2, and a high fill factor of 0.67, which represents one of the best PCE values for low bandgap (E_g < 1.3 eV)–based organic solar cells.