Artificial Optoelectronic Synapses Based on TiNxO2–x/MoS2 Heterojunction for Neuromorphic Computing and Visual System

Being capable of dealing with both electrical signals and light, artificial optoelectronic synapses are of great importance for neuromorphic computing and are receiving a burgeoning amount of interest in visual information processing. In this work, an artificial optoelectronic synapse composed of Al/TiN_xO_2–x/MoS₂/ITO (H-OSD) is proposed and experimentally realized. The H-OSD can enable basic electrical voltage-induced synaptic functions such as the long/short-term plasticity and moreover the synaptic plasticity can be electrically adjusted. In response to the light stimuli, versatile advanced synaptic functions including long/short-term memory, and learning-forgetting-relearning are successfully demonstrated, which could enhance the information processing capability for neuromorphic computing. Most importantly, based on these light-induced salient features, a 4 × 4 synapse array is developed to show the potential application of the proposed H-OSD in constructing artificial visual system. It is shown that the perceiving and memorizing of the light information that are respectively relevant to the visual perception and visual memory functions, can be readily attained through tuning of the light intensity and the number of illuminations. As such, the proposed optoelectronic synapse shows great potentials in both neuromorphic computing and visual information processing and will facilitate the applications such as electronic eyes and light-driven neurorobotics.     

A Flexible Mott Synaptic Transistor for Nociceptor Simulation and Neuromorphic Computing

Designing transparent flexible electronics with multi-biological neuronal functions and superior flexibility is a key step to establish wearable artificial intelligence equipment. Here, a flexible ionic gel-gated VO₂ Mott transistor is developed to simulate the functions of the biological synapse. Short-term and long-term plasticity of the synapse are realized by the volatile electrostatic carrier accumulation and nonvolatile proton-doping modulation, respectively. With the achievement of multi-essential synaptic functions, an important sensory neuron, nociceptor, is perfectly simulated in our synaptic transistors with all key characteristics of threshold, relaxation, and sensitization. More importantly, this synaptic transistor exhibits high tolerance to the bending deformation, and the cycle-to-cycle variations of multi-conductance states in potentiation and depression properties are maintained within 4%. This superior stability further indicates that our flexible device is suitable for neuromorphic computing. Simulation results demonstrate that high recognition accuracy of handwritten digits (>95%) can be achieved in a convolution neural network built from these synaptic transistors. The transparent and flexible Mott transistor based on electrically-controlled VO₂ metal-insulator transition is believed to open up alternative approaches to developing highly stable synapses for future flexible neuromorphic systems.     

Electrolyte‐Gated Synaptic Transistor with Oxygen Ions

Artificial synaptic devices are the essential hardware of neuromorphic computing systems, which can simultaneously perform signal processing and information storage between two neighboring artificial neurons. Emerging electrolyte‐gated transistors have attracted much attention for efficient synaptic emulation by using an addition gate terminal. Here, an electrolyte‐gated synaptic device based on the SrCoO_x (SCO) films is proposed. It is demonstrated that the reversible modulation of SCO phase transforms the brownmillerite SrCoO_2.5 and perovskite SrCoO_3?δ , through controlling the insertion and extraction of oxygen ions with electrolyte gating. Nonvolatile multilevel conduction states can be realized in the SCO films following this route. The synaptic functions such as the long‐term potentiation and depression of synaptic weight, spike‐timing‐dependent plasticity, as well as spiking logic operations in the device are successfully mimicked. These results provide an alternative avenue for future neuromorphic devices via electrolyte‐gated transistors with oxygen ions.     

Artificial Synapse Based on Oxygen Vacancy Migration in Ferroelectric-Like C-Axis-Aligned Crystalline InGaSnO Semiconductor Thin-Film Transistors for Highly Integrated Neuromorphic Electronics

Artificial synapses are a key component of neuromorphic computing systems. To achieve high-performance neuromorphic computing ability, a huge number of artificial synapses should be integrated because the human brain has a huge number of synapses (≈10¹⁵). In this study, a coplanar synaptic, thin-film transistor (TFT) made of c-axis-aligned crystalline indium gallium tin oxide (CAAC–IGTO) is developed. The electrical characteristics of the biological synapses such as inhibitory postsynaptic current (IPSC), paired-pulse depression (PPD), short-term plasticity (STP), and long-term plasticity at V_DS = 0.1 V, are demonstrated. The measured synaptic behavior can be explained by the migration of positively charged oxygen vacancies (V_o⁺/V_o⁺⁺) in the CAAC–IGTO layer. The mechanism of implementing synaptic behavior is completely new, compared to previous reports using electrolytes or ferroelectric gate insulators. The advantage of this device is to use conventional gate insulators such as SiO₂ for synaptic behavior. Previous studies use chitosan, Ta₂O₃, SiO₂ nanoparticles , Gd₂O₃, and HfZrO_x for gate insulators, which cannot be used for high integration of synaptic devices. The metal–oxide TFTs, widely used in the display industry, can be applied to the synaptic transistors. Therefore, CAAC–IGTO synaptic TFT can be a good candidate for application as an artificial synapse for highly integrated neuromorphic chips.     

Bidirectionally Photoresponsive Optoelectronic Transistors with Dual Photogates for All-Optical-Configured Neuromorphic Vision

Bio-inspired neuromorphic vision sensors, integrating optical sensing, and processing functions have attracted significant attention for developing future low-power and high-efficiency imaging systems. However, the compulsory electrical signal modulation to achieve inhibitory behaviors in most reported neuromorphic vision sensors results in additional hardware and computational latency. Herein, bidirectional photoresponsive optoelectronic synapses based on In₂O₃/Al₂O₃/Y6 phototransistors are achieved, realizing all-optical-configured synaptic weight updates enabled by dual photogates. The inhibitory and excitatory photoresponses originate from the photogating effects provided by trapped photogenerated electrons in Al₂O₃ under near-infrared light and the ionized oxygen vacancies in In₂O₃ under ultra-violet light, respectively. The bidirectional phototransistor illustrates outstanding optoelectronic synaptic characteristics with low nonlinearity and asymmetry, demonstrating high efficiencies in both preprocessing and postprocessing tasks, such as noise reduction, contrast enhancement, and pattern recognition. The proposed dual-photogate optoelectronic synapses provide effective strategies to construct high-efficiency neuromorphic vision sensors and in-sensor computing systems.     

Ferroelectrics-Electret Synergetic Organic Artificial Synapses with Single-Polarity Driven Dynamic Reconfigurable Modulation

Most current studies of artificial synapses only mimic the static plasticity, which is far from achieving the complex behaviors of the human brain. The few reported dynamic reconfigurable synapses based on ambipolar transistors switch the operating states by voltages with opposite polarity, which impedes the development of highly efficient synaptic readout circuits. To improve the efficiency, flexibility, and biocompatibility of dynamic reconfigurable synapses, here a ferroelectrics-electret synergetic organic synaptic p-type transistor (FESOST) is devised. Owing to the synergetic action of ferroelectric polarization switching and charge capture, FESOST exhibits single-polarity driven dynamic reconfigurable operating states with different synaptic behaviors (potentiation and depression) in response to the same gate pulse in different modes (excitatory and inhibitory). In addition, various single-polarity driven synaptic behaviors including short-term/long-term plasticity, paired-pulse facilitation/depression, spike-rate-dependent plasticity, and spike-number-dependent plasticity are also simulated. Finally, the reconfigurable artificial temperature perception system is simulated for the complex emotions of humans in response to different weather stimuli for people of different constitutions. The novel device architecture represents a major step forward in the development of dynamic, reconfigurable, high-efficiency, organic synapses.     

Low Power MoS2/Nb2O5 Memtransistor Device with Highly Reliable Heterosynaptic Plasticity

Artificial synapses based on 2D MoS₂ memtransistors have recently attracted considerable attention as a promising device architecture for complex neuromorphic systems. However, previous memtransistor devices occasionally cause uncontrollable analog switching and unreliable synaptic plasticity due to random variations in the field-induced defect migration. Herein, a highly reliable 2D MoS₂/Nb₂O₅ heterostructure memtransistor device is demonstrated, in which the Nb₂O₅ interlayer thickness is a critical material parameter to induce and tune analog switching characteristics of the 2D MoS₂. Ultraviolet photoelectron spectroscopy and photoluminescence analyses reveal that the Schottky barrier height at the 2D channel–electrode junction of the MoS₂/Nb₂O₅ heterostructure films is increased, leading to more effective contact barrier modulation and allowing more reliable resistive switching. The 2D/oxide memtransistors attain dual-terminal (drain and gate) stimulated heterosynaptic plasticity and highly precise multi-states. In addition, the memtransistor devices show an extremely low power consumption of ≈6 pJ and reliable potentiation/depression endurance characteristics over 2000 pulses. A high pattern recognition accuracy of ≈94.2% is finally achieved from the synaptic plasticity modulated by the drain pulse configuration using an image pattern recognition simulation. Thus, the novel 2D/oxide memtransistor makes a potential neuromorphic circuitry more flexible and energy-efficient, promoting the development of more advanced neuromorphic systems.     

Tailoring Neuroplasticity in a Ferroelectric-Gated Multi-Terminal Synaptic Transistor by Bi-Directional Modulation for Improved Pattern Edge Recognition

The dynamic modulation of the plasticity of artificial neuromorphic devices facilitates a wide range of neuromorphic functions. However, integrating diverse plasticity modulation techniques into a single device presents a challenge due to limitations in the device structure design. Here, a multiterminal artificial synaptic device capable of bi-directional modulation on its plasticity is proposed. Significantly, the conversion of inhibitory and excitatory synaptic plasticity can be achieved not only by modifying the polarity of the presynaptic voltage spike but also by exchanging its input terminal between top and bottom gate while maintaining the same presynaptic stimuli. This unique bi-directional modulation of synaptic plasticity has been attributed to two distinct physical mechanisms: nonvolatile ferroelectric polarization and interface charge trap-induced memory characteristics. Additionally, the effective dynamic modulation of the synaptic behaviors is quantified under different back-gate bias and verified in the constructed neural network perceptron. Further, a visual simulation demonstrates the enhanced clarity and precision of edge recognition through the back-gate modulation in the artificial synapses. This study provides a strategy to fulfill diversified modulation on synaptic plasticity in ferroelectric-gated transistors, thereby prompting efficient and controllable neuromorphic visual systems.     

Space‐Confined Chemical Vapor Deposition Synthesis of Ultrathin HfS2 Flakes for Optoelectronic Application

Due to the predicted excellent electronic properties superior to group VIB (Mo and W) transition metal dichalcogenides (TMDs), group IVB TMDs have enormous potential in nanoelectronics. Here, the synthesis of ultrathin HfS₂ flakes via space‐confined chemical vapor deposition, realized by an inner quartz tube, is demonstrated. Moreover, the effect of key growth parameters including the dimensions of confined space and deposition temperature on the growth behavior of products is systematically studied. Typical as‐synthesized HfS₂ is a hexagonal‐like flake with a smallest thickness of ≈1.2 nm (bilayer) and an edge size of ≈5 µm. The photodetector based on as‐synthesized HfS₂ flakes demonstrates excellent optoelectronic performance with a fast photoresponse time (55 ms), which is attributed to the high‐quality crystal structure obtained at a high deposition temperature and the ultraclean interface between HfS₂ and the mica substrate. With such properties HfS₂ holds great potential for optoelectronics applications.     

Artificial Synapses Based on Multiterminal Memtransistors for Neuromorphic Application

Neuromorphic computing, which emulates the biological neural systems could overcome the high‐power consumption issue of conventional von‐Neumann computing. State‐of‐the‐art artificial synapses made of two‐terminal memristors, however, show variability in filament formation and limited capacity due to their inherent single presynaptic input design. Here, a memtransistor‐based arti?cial synapse is realized by integrating a memristor and selector transistor into a multiterminal device using monolayer polycrys‐talline‐MoS₂ grown by a scalable chemical vapor deposition (CVD) process. Notably, the memtransistor offers both drain‐ and gate‐tunable nonvolatile memory functions, which efficiently emulates the long‐term potentiation/depression, spike‐amplitude, and spike‐timing‐dependent plasticity of biological synapses. Moreover, the gate tunability function that is not achievable in two‐terminal memristors, enables significant bipolar resistive states switching up to four orders‐of‐magnitude and high cycling endurance. First‐principles calculations reveal a new resistive switching mechanism driven by the diffusion of double sulfur vacancy perpendicular to the MoS₂ grain boundary, leading to a conducting switching path without the need for a filament forming process. The seamless integration of multiterminal memtransistors may offer another degree‐of‐freedom to tune the synaptic plasticity by a third gate terminal for enabling complex neuromorphic learning.     

Set/Reset Bilaterally Controllable Resistance Switching Ga-doped Ge2Sb2Te5 Long-Term Electronic Synapses for Neuromorphic Computing

Long-term plasticity of bio-synapses modulates the stable synaptic transmission that is quite related to the encoding of information and its emulation using electronic hardware is one of important targets for neuromorphic computing. Ge₂Sb₂Te₅ (GST) based phase change random access memory (PCRAM) has become a strong candidate for complementary-metal-oxide-semiconductor (CMOS) compatible integrated long-term electronic synapses to cope with the high-efficient and low power consumption data processing tasks for neuromorphic computing. However, the performance of PCRAM electronic synapses is still quite limited due to the challenges in linear and continuous conductance regulation, which originates from the fast and uncontrollable resistance switching characteristic of conventional PCRAM for the data storage application. Here an in-depth study is reported on the impact of gallium (Ga) doping on GST (GaGST) structural properties and on the corresponding 0.13 µm CMOS technology fabricated PCRAM integrated devices with a mushroom structure. The Ga doping effectively retarded the crystallization process of GST by augmenting the local disorder of GeTe_4-nGe_n tetrahedron, which subsequently leads to the Set/Reset bilaterally controllable resistance switching of corresponding PCRAM devices. The optimized 6.5%GaGST electronic synapses demonstrate gradual resistance switching characteristics and a good multilevel retention feature and eventually exhibit outstanding long-term synaptic plasticity like potentiation/depression and spiking time dependent plasticity in four forms. Such long-term electronic synapses are applied to handwritten digits recognition (96.22%) and CIFAR-10 image categorization (93.6%) and attain very high accuracy for both tasks. These results provide an effective method to achieve high performance PCRAM electronic synapses and highlight the great potential of GaGST PCRAM as a component for future high-performance neuromorphic computing.     

Flexible,Conformal Organic Synaptic Transistors on Elastomer for Biomedical Applications

Bioelectronics in synaptic transistors for future biomedical applications, such as implanted treatments and human–machine interfaces, must be flexible with good mechanical compatibility with biological tissues. The rigid nature and high deposition temperature in conventional inorganic synaptic transistors restrict the development of flexible, conformal synaptic devices. Here, the dinaphtho[2,3‐b:2′,3′‐f]thieno[3,2‐b]‐thiophene organic synaptic transistor on elastic polydimethylsiloxane is demonstrated to avoid these limitations. The unique advantages of organic materials in low Young's modulus and low temperature process enable seamless adherence of organic synaptic transistors on arbitrary‐shaped objects. On 3D curved surfaces, the essential synaptic functions, such as potentiation/depression, short/long‐term synaptic plasticity, and spike voltage–dependent plasticity, are successfully realized. The time‐dependent surface potential characterization reveals the slow polarization of dipoles in the dielectric is responsible for hysteresis and synaptic behaviors. This work represents that organic materials offer a potential platform to realize the flexible, conformal synaptic transistors for the development of wearable and implantable artificial neuromorphic systems.     

Bidirectional All‐Optical Synapses Based on a 2D Bi2O2Se/Graphene Hybrid Structure for Multifunctional Optoelectronics

Neuromorphic computing has been extensively studied to mimic the brain functions of perception, learning, and memory because it may overcome the von Neumann bottleneck. Here, with the light‐induced bidirectional photoresponse of the proposed Bi₂O₂Se/graphene hybrid structure, its potential use in next‐generation neuromorphic hardware is examined with three distinct optoelectronic applications. First, a photodetector based on a Bi₂O₂Se/graphene hybrid structure presents positive and negative photoresponsibility of 88 and ?110 A W^?1 achieved by the excitation of visible wavelength and ultraviolet wavelength light at intensities of 1.2 and 0.3 mW cm^?2, respectively. Second, this unique photoresponse contributes to the realization of all optically stimulated long‐term potentiation or long‐term depression to mimic synaptic short‐term plasticity and long‐term plasticity, which are attributed to the combined effect of photoconductivity, bolometric, and photoinduced desorption. Third, the devices are applied to perform digital logic functions, such as “AND” and “OR,” using full light modulation. The proposed Bi₂O₂Se/graphene‐based optoelectronic device represents an innovative and efficient building block for the development of future multifunctional artificial neuromorphic systems.     

Multistability in Bistable Ferroelectric Materials toward Adaptive Applications

Traditionally thermodynamically bistable ferroic materials are used for nonvolatile operations based on logic gates (e.g., in the form of field effect transistors). But, this inherent bistability in these class of materials limits their applicability for adaptive operations. Emulating biological synapses in real materials necessitates gradual tuning of resistance in a nonvolatile manner. Even though in recent years few observations have been made of adaptive devices using a ferroelectric, the principal question as to how to make a ferroelectric adaptive has remained elusive in the literature. Here, it is shown that by locally controlling the nucleation energy distribution at the ferroelectric–electrode interface multiple‐addressable states in a ferroelectric can be created, which is necessary for adaptive/synaptic applications. This is realized by depositing a layer of nonswitchable ZnO on top of thin film ferroelectric PbZr _x Ti_{(1– x )}O₃. This methodology of interface‐engineered ferroelectric should enable realising brain‐like adaptive/synaptic memory in complementary metal‐oxide‐semiconductor (CMOS) devices. Furthermore, the temporally stable multistability in ferroelectrics should enable the designing of multistate memory and logic devices.     

Adaptive Crystallite Kinetics in Homogenous Bilayer Oxide Memristor for Emulating Diverse Synaptic Plasticity

A critical routine for memristors applied to neuromorphic computing is to approximate synaptic dynamic behaviors as closely as possible. A type of homogenous bilayer memristor with a structure of W/HfO_y/HfO_x/Pt is designed and constructed in this paper. The memristor replicates the structure and oxygen vacancy (V_O) distribution of a complete synapse and its Ca²⁺ distribution, respectively, after the forming process. The detailed characterizations of its atomic structure and phase transformation in and near the conductive channel demonstrate that the crystallite kinetics are adaptively coupled with the V_O migration prompted by directional external bias. The extrusion (injection) of the V_Os and the subsequent crystallite coalescence (separation), phase transformation, and alignment (misalignment) resemble closely the Ca²⁺ flux and neurotransmitter dynamics in chemical synapses. Such adaptation and similarity allow the memristor to emulate diverse synaptic plasticity. This study supplies a kinetic process of conductive channel theory for bilayer memristors. In addition, our memristor has very low energy consumption (5–7.5 fJ per switching for a 0.5 µm diameter device, compatible with a synaptic event) and is therefore suitable for large‐scale integration used in neuromorphic networks.     

Controlling the Synaptic Plasticity of a Cu2S Gap‐Type Atomic Switch

It is demonstrated that a Cu₂S gap‐type atomic switch, referred to as a Cu₂S inorganic synapse, emulates the synaptic plasticity underlying the sensory, short‐term, and long‐term memory formations in the human brain. The change in conductance of the Cu₂S inorganic synapse is considered analogous to the change in strength of a biological synaptic connection known as the synaptic plasticity. The plasticity of the Cu₂S inorganic synapse is controlled depending on the interval, amplitude, and width of an input voltage pulse stimulation. Interestingly, the plasticity is influenced by the presence of air or moisture. Time‐dependent scanning tunneling microscopy images of the Cu‐protrusions grown in air and in vacuum provide clear evidence of the influence of air on their stability. Furthermore, the plasticity depends on temperature, such that a long‐term memory is achieved much faster at elevated temperatures with shorter or fewer number of input pulses, indicating a close analogy with a biological synapse where elevated temperature increases the degree of synaptic transmission. The ability to control the plasticity of the Cu₂S inorganic synapse justifies its potential as an advanced synthetic synapse with air/temperature sensibility for the development of artificial neural networks.     

Optoelectronic Perovskite Synapses for Neuromorphic Computing

Simulating the human brain for neuromorphic computing has attractive prospects in the field of artificial intelligence. Optoelectronic synapses have been considered to be important cornerstones of neuromorphic computing due to their ability to process optoelectronic input signals intelligently. In this work, optoelectronic synapses based on all‐inorganic perovskite nanoplates are fabricated, and the electronic and photonic synaptic plasticity is investigated. Versatile synaptic functions of the nervous system, including paired‐pulse facilitation, short‐term plasticity, long‐term plasticity, transition from short‐ to long‐term memory, and learning‐experience behavior, are successfully emulated. Furthermore, the synapses exhibit a unique memory backtracking function that can extract historical optoelectronic information. This work could be conducive to the development of artificial intelligence and inspire more research on optoelectronic synapses.     

Photoelectric Synaptic Plasticity Realized by 2D Perovskite

Recently, several light‐stimulated artificial synaptic devices have been proposed to mimic photonic synaptic plasticity for neuromorphic computing. Here, the photoelectric synaptic plasticity based on 2D lead‐free perovskite ((PEA)₂SnI₄) is demonstrated. The devices show a photocurrent activation in response to a light stimulus in a neuron‐like way and exhibit several essential synaptic functions such as short‐term plasticity (STP) and long‐term plasticity (LTP) as well as their transmission based on spike frequency control. The strength of synaptic connectivity can be effectively modulated by the duration, irradiance, and wavelength of light spikes. The ternary structure of (PEA)₂SnI₄ causes it to possess varied photoelectric properties by composition control, which enhances the complexity and freedoms required by neuromorphic computing. The physical mechanisms of the memory effect are attributed to two distinct lifetimes of photogenerated carrier trapping/detrapping processes modulated by controlling the proportion of Sn vacancies. This work demonstrates the great potential of (PEA)₂SnI₄ as a platform to develop future multifunctional artificial neuromorphic systems.     

Ultrafast Responsive and Low-Energy-Consumption Poly(3-hexylthiophene)/Perovskite Quantum Dots Composite Film-Based Photonic Synapse

Emulation of photonic synapses through photo-recordable devices has aroused tremendous discussion owing to the low energy consumption, high parallel, and fault-tolerance in artificial neuromorphic networks. Nonvolatile flash-type photomemory with short photo-programming time, long-term storage, and linear plasticity becomes the most promising candidate. Nevertheless, the systematic studies of mechanism behind the charge transfer process in photomemory are limited. Herein, the physical properties of APbBr₃ perovskite quantum dots (PQDs) on the photoresponsive characteristics of derived poly(3-hexylthiophene-2,5-diyl) (P3HT)/PQDs-based photomemory t hrough facile A-site substitution approach are explored. Benefitting from the lowest valance band maximum and longest exciton lifetime of FAPbBr₃ quantum dot (FA-QDs), P3HT/FA-QDs-derived photomemory not only exhibits shortest photoresponsive characteristic time compared to FA_0.5Cs_0.5PbBr₃ quantum dots (Mix-QDs) and CsPbBr₃ quantum dots (Cs-QDs) but also displays excellent ON/OFF current ratio of 2.2 upon an extremely short illumination duration of 1 ms. Moreover, the device not only achieves linear plasticity of synapses by optical potentiation and electric depression, but also successfully emulates the features of photon synaptic such as pair-pulse facilitation, long-term plasticity, and multiple spike-dependent plasticity and exhibits extremely low energy consumption of 3 × 10⁻¹⁷ J per synaptic event.     

Dual‐Phase All‐Inorganic Cesium Halide Perovskites for Conducting‐Bridge Memory‐Based Artificial Synapses

Neuromorphic computing, which mimics biological neural networks, can overcome the high‐power and large‐throughput problems of current von Neumann computing. Two‐terminal memristors are regarded as promising candidates for artificial synapses, which are the fundamental functional units of neuromorphic computing systems. All‐inorganic CsPbI₃ perovskite‐based memristors are feasible to use in resistive switching memory and artificial synapses due to their fast ion migration. However, the ideal perovskite phase α‐CsPbI₃ is structurally unstable at ambient temperature and rapidly degrades to a non‐perovskite δ‐CsPbI₃ phase. Here, dual‐phase (Cs₃Bi₂I₉)_0.4?(CsPbI₃)_0.6 is successfully fabricated to achieve improved air stability and surface morphology compared to each single phase. Notably, the Ag/polymethylmethacrylate/(Cs₃Bi₂I₉)_0.4?(CsPbI₃)_0.6/Pt device exhibits non‐volatile memory functions with an endurance of ≈10³ cycles and retention of ≈10⁴ s with low operation voltages. Moreover, the device successfully emulates synaptic behavior such as long‐term potentiation/depression and spike timing/width‐dependent plasticity. This study will contribute to improving the structural and mechanical stability of all‐inorganic halide perovskites (IHPs) via the formation of dual phase. In addition, it proves the great potential of IHPs for use in low‐power non‐volatile memory devices and electronic synapses.