共查询到18条相似文献,搜索用时 93 毫秒
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ZrN/n-GaAs肖特基势垒特性研究 总被引:1,自引:2,他引:1
本文用RBS,AES和电特性测量等方法,研究了ZrN/n-GaAs肖特基势垒.结果表明ZrN/GaAs势垒有良好的电特性和高温稳定性.经850℃高温退火后,势垒高度为0.90eV,理想因子n=1.02.同时我们观察到,随着退火温度升高(从500℃升高到850℃),ZrN/GaAs势垒电特性有明显改进:肖特基势垒高度增大、二极管反向电流减小、二极管电容减小和反向击穿电压增大.以上特点表明,ZrN/GaAs是用于自对准高速GaAs集成电路的较为理想的栅材料. 相似文献
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本文对Ti/Mo/Ti/Au作为栅金属的GaAsMESFET进行了四种不同的应力试验:1.高温反偏(HTRB);2.高压反偏(HRB);3.高温正向大电流(HFGC);4.高温存贮(HTS).通过HRB,ΦB从0.64eV减少到0.62eV,理想因子n略有增大.HTS试验中ΦB从0.67eV增加到0.69eV.分析表明,这归因于界面氧化层的消失,以及Ti与GaAs的反应;HFGC试验结果表明其主要的失效模式为烧毁,SEM观察中有电徙动及断栅现象发生.AES分析表明。应力试验后的样品,肖特基势垒接触界面模糊 相似文献
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利用自主开发的蒙特卡罗器件模拟软件 ,对 n沟肖特基势垒隧穿晶体管 (SBTT)的输出特性和转移特性进行了模拟 ,详细分析了沟道区掺杂浓度 ,源漏硅化物区深度以及栅氧化层厚度对 SBTT特性的影响。 相似文献
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在分析结势垒控制肖特基整流管工作机理的基础上,详细讨论器件特性与结构参数的关系;给出了器件优化设计的依据;建立了适用于SPICE电路分析程序的等效电路模型。 相似文献
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费庆宇 《电子产品可靠性与环境试验》1999,(5):30-32
GaAs MESFET的栅极肖特基势垒接触退化的主要失效机理是栅金属下沉和栅金属扩散,因而引起有效沟道宽度减小或沟道掺杂浓度的下降。笔者用高频C-V法测定试验前后沟道载流子浓度随深度分布的变化,可获得栅金属下沉和栅金属扩散的信息,为肖特基接触退化的失效分析提供了一种有效的方法。 相似文献
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双面Schottky势垒型GaAs粒子探测器特性 总被引:1,自引:2,他引:1
双面肖特基势垒型 Ga As粒子探测器由半绝缘砷化镓材料制成 ,器件结构为金属 -半导体-金属结构 ,该探测器能经受能量为 1 .5Me V、剂量高达 1 0 0 0 k Gy的电子、50 0 k Gy的 γ射线、β粒子、X射线等粒子的辐照测试 ,辐照后器件击穿曲线坚挺 ,反向漏电流最低为 0 .48μA.器件的另一特征是其反向漏电流与 X射线的照射量呈线性关系 .该探测器在 2 4 1Am( Eα=5.48Me V) α粒子辐照下 ,其最大的电荷收集率和能量分辩率分别为 45%和 7% .在由 90 Sr( Eβ=2 .2 7Me V)发出的 β粒子辐照下 ,探测器有最小的电离粒子谱 .该探测器对光照也有明显的响应 相似文献
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Hao Wu Xuanwu Kang Yingkui Zheng Ke Wei Lin Zhang Xinyu Liu Guoqi Zhang 《半导体学报》2022,43(6):062803-1-062803-8
In this work, the optimization of reverse leakage current (IR) and turn-on voltage (VT) in recess-free AlGaN/GaN Schottky barrier diodes (SBDs) was achieved by substituting the Ni/Au anode with TiN anode. To explain this phenomenon, the current transport mechanism was investigated by temperature-dependent current–voltage (I–V) characteristics. For forward bias, the current is dominated by the thermionic emission (TE) mechanisms for both devices. Besides, the presence of inhomogeneity of the Schottky barrier height (qφb) is proved by the linear relationship between qφb and ideality factor. For reverse bias, the current is dominated by two different mechanisms at high temperature and low temperature, respectively. At high temperatures, the Poole–Frenkel emission (PFE) induced by nitrogen-vacancy (VN) is responsible for the high IR in Ni/Au anode. For TiN anode, the IR is dominated by the PFE from threading dislocation (TD), which can be attributed to the decrease of VN due to the suppression of N diffusion at the interface of Schottky contact. At low temperatures, the IR of both diodes is dominated by Fowler–Nordheim (FN) tunneling. However, the VN donor enhances the electric field in the barrier layer, thus causing a higher IR in Ni/Au anode than TiN anode, as confirmed by the modified FN model. 相似文献
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将Ti硅化物-p型体区形成的反偏肖特基势垒结构引入绝缘体上硅动态阈值晶体管.传统栅体直接连接DTMOS,为了避免体源二极管的正向开启,工作电压应当低于0.7V.而采用反偏肖特基势垒结构,DTMOS的工作电压可以拓展到0.7V以上.实验结果显示,室温下采用反偏肖特基势垒SOI DTMOS结构,阈值电压可以动态减小200mV.反偏肖特基势垒SOI DTMOS结构相比于传统模式,显示出优秀的亚阈值特性和电流驱动能力.另外,对浮体SOI器件、传统模式SOI器件和反偏肖特基势垒SOI DTMOS的关态击穿特性进行了比较. 相似文献
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SOI反偏肖特基势垒动态阈值MOS特性 总被引:1,自引:0,他引:1
将Ti硅化物-p型体区形成的反偏肖特基势垒结构引入绝缘体上硅动态阈值晶体管.传统栅体直接连接DTMOS,为了避免体源二极管的正向开启,工作电压应当低于0.7V.而采用反偏肖特基势垒结构,DTMOS的工作电压可以拓展到0.7V以上.实验结果显示,室温下采用反偏肖特基势垒SOI DTMOS结构,阈值电压可以动态减小200mV.反偏肖特基势垒SOI DTMOS结构相比于传统模式,显示出优秀的亚阈值特性和电流驱动能力.另外,对浮体SOI器件、传统模式SOI器件和反偏肖特基势垒SOI DTMOS的关态击穿特性进行了比较. 相似文献
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H. C. Chang C. S. Lee S. H. Chen E. Y. Chang J. Z. He 《Journal of Electronic Materials》2004,33(7):L15-L17
Schottky structures with copper and refractory metals as diffusion barrier for GaAs Schottky diodes were evaluated. These
structures have lower series resistances than the conventionally used Ti/Pt/Au structure. Based on the electrical and material
characteristics, the Ti/W/Cu and Ti/Mo/Cu Schottky structures are thermally stable up to 400°C; the Ti/Co/Cu Schottky structure
is thermally stable up to 300°C. Overall, the copper-metallized Schottky structures have excellent electrical characteristics
and thermal stability, and can be used as the Schottky metals for GaAs devices. 相似文献
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T. L. Cheeks T. Sands R. E. Nahory J. P. Harbison H. L. Gilchrist V. G. Keramidas 《Journal of Electronic Materials》1991,20(7):881-884
Enhancement of the Schottky barrier height was obtained in MBE grown (CoAl or NiAl)/ AlAs/GaAs heterostructures by incorporating
ultra thin AlAs layers between the metal and GaAs. By varying the AlAs thickness from 0 to 10 nm the effective barrier height,
determined by current-voltage and capacitance-voltage measurements, could be tailored from 0.76 eV to 1.1 eV. Internal photoemission
measurements were performed to verify the 1.1 eV barrier height. The temperature dependence of the current-voltage characteristics
showed that thermionic emission was the dominant transport mechanism for all thicknesses of AlAs. The results were consistant
with transport through the X-band of AlAs. 相似文献