一种基于改进的AdaBoost、肤色和2DPCA的人脸检测方法

为了提高复杂背景下多人脸检测率以及人脸检测速度,提出了一种基于改进AdaBoost、肤色检测和二维主成分分析法（Two-dimensional Principal Component Analysis,2DPCA）的人脸检测方法.该方法首先利用金字塔结构快速检测人脸,得到人脸检测区域,然后利用肤色检测对待判人脸区域进行过滤,过滤误检的非人脸区域,最后根据人脸的几何位置进行人脸关键部位的2DPCA检测.仿真结果表明,该方法实现了复杂背景下多人脸图像快速检测和精确定位,有效降低了误检率,使检测结果更加精确.     

基于单一神经网络的多尺度人脸检测

人脸检测是指检测并定位输入图像中所有的人脸,并返回精确的人脸位置和大小,是目标检测的重要方向。为了解决人脸尺度多样性给人脸检测造成的困难,该文提出一种新的基于单一神经网络的特征图融合多尺度人脸检测算法。该算法在不同大小的卷积层上预测人脸,实现实时多尺度人脸检测,并通过将浅层的特征图融合引入上下文信息提高小尺寸人脸检测精度。在数据集FDDB和WIDERFACE测试结果表明,所提方法达到了先进人脸检测的水平,并且该方法去掉了框推荐过程,因此检测速度更快。在WIDERFACE难、适中、简单3个子数据集上测试结果分别为87.9%, 93.2%, 93.4% MAP,检测速度为35 fps。所提算法与目前效果较好的极小人脸检测方法相比,在保证精度的同时提高了人脸检测速度。     

基于肤色特征和Adaboost算法的人脸检测方法探析

针对采用基于肤色特征的人脸检测方法和基于Ada Boost算法的人脸检测,单一方法的人脸检测系统在检测率和误检率方面不能同时达到比较好的效果。因此结合上述两种算法各自的优点,将两种方法相结合并加以改进,主要思想是基于肤色特征的人脸检测作为预人脸检测,得到含有人脸的肤色区域,运用级联分类器检测这些肤色区域。利用matlab仿真软件进行了大量的仿真探析并进行了统计与分析,探析表明改进算法在误检率和检测率方面明显优于两种单独算法,同时对于人脸姿势方面,也能够达到很好的检测效果。     

基于肤色和Adaboost算法的人脸检测

人脸检测是人脸识别的第一环节,也是非常关键的环节。试验中主要针对静态彩色图像进行人脸检测,研究肤色在人脸检测中的应用。不同图像背景、人脸的可变性和光照条件变化都增加了人脸检测的难度。因此,从一幅图像中检测人脸是一项具有挑战性的任务。采用Adaboost的人脸检测,并提出肤色与Adaboost算法相结合的人脸检测方法。对输入的彩色图像进行从RGB空间到YCbCr空间的转换,然后进行肤色分割,排除背景干扰,最后用Adaboost算法对可能区域进行检测,得到人脸位置。实验表明,该方法误检率低,鲁棒性好,对人脸检测有较强的实用性。     

一种基于AdaBoost人脸检测算法在Android平台的实现

针对Android系统自带的人脸检测算法不能精确地检测人脸,尤其是带眼镜后,根本无法检测到人脸.本文研究了一种基于Android系统下的AdaBoost人脸检测算法.首先介绍了Android平台下的人脸检测体系结构,然后对AdaBoost人脸检测模块,包括特征值与特征值的计算、AdaBoost分类器、开发环境搭建分别进行了说明.最后通过样本创建,以及训练好的分类器进行人脸检测.实验结果表明：由于充分利用AdaBoost人脸检测方法实时性比较强、检测率高,该方法完全满足Android平台下人脸检测的需要.     

基于LARK特征提取的AdaBoost人脸检测系统

由于图像易受到外部条件及图像背景的影响,AdaBoost人脸检测方法在特征分类的过程中,单个分类器存在将人脸图像误判为非人脸图像的情况,致使分类器在检测过程中存在误差。文中通过研究AdaBoost人脸检测方法,并将LARK特征提取方法应用到特征分类当中,使原有的方法上得到改进,从而有效提高了人脸检测的准确度。     

基于YOLOv3的人脸关键点检测

深度学习中神经网络强大的特征提取能力,使非约束场景下的人脸检测不再困难,于是人脸关键点的检测逐渐成为人脸检测的关注点,但目前为止较少算法具备对人脸关键点的检测能力。YOLOv3作为精度和速度均表现优异的算法,同样不具备关键点检测的能力。因此,文章提出基于YOLOv3的人脸关键点检测算法,该算法对YOLOv3改进,设计关键点损失函数,实现对人脸关键点的定位,最终实现YOLOv3在人脸检测中同时输出人脸包围框和人脸关键点。实验表明,提出的方法在YOLOv3上成功实现了对人脸矩形包围框和人脸关键点的同时输出。     

人脸检测技术综述

人脸检测是人脸识别的组成部分。近年来,人脸检测逐渐发展成为独立的课题,同时也越来越受到学者们的重视。文章对人脸检测的发展历史和研究现状等进行了阐述,通过整理分析人脸检测相关文献,并对人脸检测进行了分类,对比了各个方法的优缺点,最后讨论了人脸检测今后的研究方向。     

基于肤色模型的人脸检测研究

现有的人脸检测方法,对复杂光照环境下获得的彩色人脸图像的检测效果仍不太理想。在仔细研究目前人脸检测方法的基础上,对基于肤色分割结合模板匹配的人脸检测方法进行改进,提出基于“光照预处理＋肤色模型＋模板匹配”的人脸检测问题解决思路。实验结果表明,该方法对实际场景中正面和准正面的人脸图像,平均准检率达到84％,同时对光照变化不敏感,而且对姿态和表情的变化也具有较好的鲁棒性。     

Adaboost人脸检测算法的改进

AdaBoost人脸检测算法是该领域中比较成功的算法之一。当被检测图片中人脸大小缩放至与分类器尺寸左右时,才能够正确地判定人脸,而其他缩放下的检测造成了冗余。验证了人脸检测速度的影响因素,针对分辨率为640×480的图片,建立了人脸尺寸高斯模型以及单幅人脸权重模型,提出了依据这两个模型的人脸检测的缩放方式。实验显示基于该方法,在稍有降低识别率的情况下,大幅提高了检测速度。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its