退火温度对HfO2薄膜应力和光学特性的影响

为了研究退火温度对HfO2薄膜应力、光学常数和表面粗糙度的影响,采用电子枪蒸镀法制备了薄膜样品,在不同温度下进行了退火处理.利用ZYGO干涉仪、UV-3101PC分光光度计、X射线衍射仪和冷场发射扫描电镜对样品进行了测试.结果表明,在本实验条件下制备的HfO2薄膜都是无定形结构;残余应力均为张应力,且随退火温度的升高呈...     

Effect of hyperthermal annealing on LPCVD silicon nitride

The objective of this paper is to understand the effects of 1100 °C annealing on film thickness, refractive index and especially residual stress of low-pressure chemical vapor deposition (LPCVD) silicon nitride films. The annealing effect on Young's modulus of silicon nitride films is also discussed. For these purposes, a number of 1100 °C furnace annealing processes in N₂ atmosphere were carried out. With the increase of annealing time, film thickness decreases exponentially and correspondingly the refractive index increases. Both film thickness and refractive index reach a stable value after several times annealing. Due to the film densification and viscous flow, residual stress of $\mathrm{Si}–{\mathrm{Si}}_3{\mathrm{N}}_4$ system increases in the first 10 min annealing treatment and then decreases in the following annealing processes. Based on the Maxwell viscoelastic model, an improved model which considers film densification and viscous flow simultaneously is built to explain the effect of annealing process on residual stress.     

Effect of thermal annealing and exposure to oxygen plasma on the properties of TiO2-Si structures

The effect of thermal annealing and exposure to oxygen plasma on the phase composition, structure, and microprofile of titanium-dioxide films deposited by high-frequency magnetron sputtering on silicon substrates is studied. The influence exerted by processing modes on the capacitance-voltage and conductance-voltage characteristics of Me-TiO₂-Si-Me structures and on the density of surface states at the semiconductor-insulator interface is examined. It is shown that TiO₂ films are amorphous upon their fabrication. Upon the annealing of films at 500°C in an argon atmosphere, crystallites of anatase and rutile appear in the amorphous matrix. The treatment of a titanium-dioxide film in oxygen plasma gives rise to rutile crystallites with new crystallographic planes. As a result of annealing at 750°C, the anatase phase disappears and the film becomes polycrystalline, containing only rutile crystallites. The capacitance of Me-TiO₂-Si-Me structures in the accumulation mode reaches the maximum value upon annealing at 750°C, which is due to the transformation of titanium dioxide to the rutile phase. The specific capacitance is 5.9 × 10^?2 F/cm³. The decrease in the capacitance of the structures and in the amount of fixed charge in the insulator upon exposure to oxygen plasma is due to the diffusion of oxygen atoms across the titanium-dioxide layer to give a SiO₂ film at the TiO₂-Si interface. As a result of the annealing and treatment of a titanium-dioxide film in oxygen plasma, the energy density of surface states decreases by more than an order of magnitude as compared with the unannealed samples.     

Rapid thermal annealing of gallium arsenide implanted with sulfur ions

Sulfur ions were implanted into semi-insulating GaAs. A SiO₂ film was deposited by either of two methods onto the implanted surface. The samples were then subjected to either rapid thermal annealing (using halogen lamps) for 10–12 s at 805°C or to conventional thermal annealing for 30 min at 800°C. The content of GaAs components in the film was determined from the spectra of Rutherford backscattering. The electron-concentration profiles were plotted using the measurements of the capacitance-voltage characteristics. It is shown that sulfur diffuses in two directions, i.e., towards the surface and into the GaAs bulk. The former process is stimulated by vacancies formed near the semiconductor surface during the deposition of SiO₂. The coefficients of the “volume” diffusion of S and of the diffusion of S towards the surface are two orders of magnitude larger upon rapid thermal annealing than upon conventional thermal annealing, with the degree of S activation also being higher.     

As2S3膜制备浮雕型全息元件的研究

本文通过对具有全息光存效应的As_2S_3膜的光辐照前后膜的腐蚀速率与挥发速率等物化性能的测量,表明制备浮雕型全息元件是可能的,并探讨其光化学反应机构。     

Structural and optoelectronic properties of nanostructured TiO2 thin films with annealing

About 480 nm thick titanium oxide (TiO₂) thin films have been deposited by electron beam evaporation followed by annealing in air at 300–600 °C with a step of 100 °C for a period of 2 h. Optical, electrical and structural properties are studied as a function of annealing temperature. All the films are crystalline (having tetragonal anatase structure) with small amount of amorphous phase. Crystallinity of the films improves with annealing at elevated temperatures. XRD and FESEM results suggest that the films are composed of nanoparticles of 25–35 nm. Raman analysis and optical measurements suggest quantum confinement effects since Raman peaks of the as-deposited films are blue-shifted as compared to those for bulk TiO₂ Optical band gap energy of the as-deposited TiO₂ film is 3.24 eV, which decreases to about 3.09 eV after annealing at 600 °C. Refractive index of the as-deposited TiO₂ film is 2.26, which increases to about 2.32 after annealing at 600 °C. However the films annealed at 500 °C present peculiar behavior as their band gap increases to the highest value of 3.27 eV whereas refractive index, RMS roughness and dc-resistance illustrate a drop as compared to all other films. Illumination to sunlight decreases the dc-resistance of the as-deposited and annealed films as compared to dark measurements possibly due to charge carrier enhancement by photon absorption.     

Effect of annealing temperature on structural,electrical and optical properties of spray pyrolytic nanocrystalline CdO thin films

Nanocrystalline CdO thin films were prepared onto a glass substrate at substrate temperature of 300 °C by a spray pyrolysis technique. Grown films were annealed at 250, 350, 450 and 550 °C for 2.5 h and studied by the X-ray diffraction, Hall voltage measurement, UV-spectroscopy, and scanning electron microscope. The X-ray diffraction study confirms the cubic structure of as-deposited and annealed films. The grain size increases whereas the dislocation density decreases with increasing annealing temperature. The Hall measurement confirms that CdO is an n-type semiconductor. The carrier density and mobility increase with increasing annealing temperature up to 450 °C. The temperature dependent dc resistivity of as-deposited film shows metallic behavior from room temperature to 370 K after which it is semiconducting in nature. The metallic behavior completely washed out by annealing the samples at different temperatures. Optical transmittance and band gap energy of the films are found to decrease with increasing annealing temperature and the highest transmittance is found in near infrared region. The refractive index and optical conductivity of the CdO thin films enhanced by annealing. Scanning electron microscopy confirms formation of nano-structured CdO thin films with clear grain boundary.     

On the structure of low-temperature PECVD silicon dioxide films

It is demonstrated that the results of refractive index, infra-red absorption and electron spin resonance measurements on low temperature PECVD silicon dioxide films are con-sistent with a network structure composed of densified, amorphous SiO₂ and micro-scopes. The density of the amorphous SiO₂ is suggested to be greater than that of un-densified SiO₂ by about 10%. Approximately 5% of the deposited film volume is argued to consist of micropores High temperature annealing relaxes the dense state of the amorphous SiO₂ and collapses the volume occupied by the micropores.     

Effects of post-lift-off annealing conditions on contact oxidation of Ti–Au top-contacts in In-Sn–Zn–O TFT

Thin film transistors (TFT) with an indium based mixed oxide semiconductor are investigated for titanium–gold top-contacts. It is noticed that upon post annealing, in order to remove chemical residuals from top-contact lift-off steps, oxidation of titanium occurs depending on the annealing conditions. Mobility of the TFT is strongly affected by contact oxidation arising from this post lift-off annealing process. Oxidation of the top-contact is facilitated by adsorbed surface oxygen or out-diffusing oxygen from the semiconductor depending on the post lift-off annealing conditions. A passivation layer that binds effectively to surface vacancies and removes adsorbed oxygen species from the semiconductor surface is demonstrated. The combinations of this passivation layer with relatively low temperature and short post lift-off annealing in an oxygen deficient environment result in significantly reduced contact oxidation and subsequently better transistor performance. Contact resistance as low as 90 Ω cm and mobility as high as 5.3 cm²/V s are obtained for solution processed mixed metal oxide semiconductor in top-contact geometry.     

纳米硅薄膜光学性质的测定与研究

通过测定纳米硅薄膜的透射谱,建立计算模型计算得出薄膜样品的折射率、厚度、吸收系数和光能隙.计算结果表明这种半导体材料在620 nm波长附近的折射率约为3.4,计算得到的厚度与用台阶仪测量的结果吻合很好.在620 nm波长附近的吸收系数介于吸收系数较小的晶体硅与吸收系数较大的非晶硅之间,光能隙约为1.6 eV,两者都随晶态含量增大而呈减小趋势.     

Effect of deposition and annealing conditions on the optical properties of amorphous silicon

The spectral characteristics of the refractive index and the extinction coefficient in the range 0.6–2.0 eV for amorphous silicon films prepared by electron-beam evaporation with variation of the substrate temperature, deposition rate, and annealing temperature in air are presented. The results obtained are discussed on the basis of the changes in the Penn gap energy as a function of the indicated preparation and treatment conditions. Fiz. Tekh. Poluprovodn. 32, 879–881 (July 1998)     

Influence of annealing ambient on GaAs oxide prepared by the liquid phase method

The characteristics of GaAs native oxides prepared by the liquid phase chemical-enhanced oxidation technique annealed at various ambiences including N₂, O₂, and mixture of N₂ (85%) and H₂ (15%) are investigated. The annealing temperatures range from 300 to 700 °C. The shrinkage of oxide film thickness, the increase of refractive index, the decrease of surface roughness, the enhancement of breakdown field strength and the reduction of leakage current have been obtained for all annealing conditions, except for annealing in the ambient atmosphere of N₂ or O₂ at temperature of 700 °C. It is found that annealed oxide films exhibited better thermal stability in an atmosphere of N₂/H₂ up to an annealing temperature of 700 °C. This is due to the existence of H atoms in the oxide films as demonstrated by SIMS depth profiles.     

A digital signal-processing analysis technique for the infrared reflectivity characterization of ion implanted silicon

A new method for the characterization of ion-implanted silicon is proposed. It is based on analysis of the Fourier spectrum of bilinearly transformed infrared reflectance versus wavenumber data of ion-implanted samples. This non-destructive technique has been applied to previously published infrared reflectance data of 〈111〉 and 〈100〉 oriented Si samples which had been implanted with 2.7 MeV phosphorus and 380 keV silicon ions, respectively, and annealed at 500° C for various lengths of time. The refractive index and thickness of the amorphous layer of the as-implanted samples can be measured directly by means of this technique. The position of boundaries between the amorphous, recrystallized and substrate zones, as well as the position of the carrier concentration peak can be determined for the various annealing times. Depending on the annealing time, the recrystallized layer in 〈111〉 silicon has a refractive index which is between 2% and 4% higher than the substrate refractive index, while the difference in refractive index between the amorphous and recrystallized layers is in the order of 5%. In contrast to these results, the presence of the substrate/recrystallized material interface could not be detected in partially recrystallized 〈100〉 silicon by this method, implying that the refractive index step at the substrate/recrystallized material interface is less than 1%. The step in refractive index at the crystalline/amorphous interface in 〈100〉 silicon implanted with a dose of 0.5 x 10¹⁶ cm⁻² silicon ions, was measured to be 12%, and it is reduced to 8% after partial regrowth has occurred. These results confirm the data obtained by a model-based least-squares analysis.     

Thin-film transistors fabricated with poly-Si films crystallized atlow temperature by microwave annealing

Solid phase crystallization of amorphous silicon films for poly-Si thin film transistors (TFTs) has advantages of low cost and excellent uniformity, but the crystallization temperature is too high. Using a microwave annealing method, we lowered the crystallization temperature and shortened the crystallization time. The complete crystallization time at 550°C was within 2 h. The device parameters of TFTs with the poly-Si films crystallized by microwave annealing were similar to those of TFTs with the poly-Si films crystallized by conventional furnace annealing. The new crystallization method seems attractive because of low crystallization temperature, short crystallization time, and comparable film properties     

Oxygen Nitrogen Mixture Effect on Aluminum Nitride Synthesis by Reactive Ion Plasma Deposition

In the work we investigate synthesis of aluminum nitride films using reactive ion plasma deposition in oxygen/nitrogen gas mixture for application as optical elements for power semiconductor lasers. The experimental refractive index of synthesized AlNO films is dependent on oxygen composition and is decreasing in diapason from 1.76 to 2.035 at elevation of the oxygen fraction.It is shown that the AlN films synthesized by pure nitrogen plasma are polycrystalline and textured. The oxygen presence in discharging gas results to growth of amorphous phase of the AlNO film.     

雌黄纳米粒的制备与表征

研究了含砷类中药新剂型一雌黄纳米粒的制备方法,为深入探讨雌黄抗癌的尺寸效应、作用机理和新的制剂工艺奠定基础。采用化学法制备雌黄纳米粒：（1）以砒霜、硫代乙酰胺（TAA）和盐酸为原料。分别用不同溶剂、控制反应物浓度和反应体系pH值、加入表面活性剂对比研究制备雌黄纳米粒;（2）用透射电镜（TEM）、X射线能谱（EDS）对雌黄纳米粒进行分析表征。实验制备了五种不同粒径的雌黄纳米粒,电镜下呈圆形或椭圆形,分散性较好,平均直径大小约为20nm、60nm、80nm、140nm和400nm。     

Rapid thermal annealing of zirconia films deposited by spray pyrolysis

Zirconia (8 mol% yttria) (YSZ) amorphous layers were deposited by spray pyrolysis on Si oxidized substrates and crystallized by rapid thermal treatment in a home-made halogen lamps furnace. Uniform films were obtained by depositing up to six layers, followed by the thermal treatment. X-ray analysis showed that the cubic phase is obtained during the initial stage of the annealing process. No significant differences with increasing annealing time nor interaction between the YSZ film and the substrate were observed. Ionic conduction in air, with activation energies comparable to those of bulk YSZ ceramics, was observed. The electrical characteristics of the films make them suitable for microelectronics applications.     

Optical characterization of anatase TiO2 films patterned by direct ultraviolet-assisted nanoimprint lithography

A direct ultraviolet (UV)-assisted nanoimprinting procedure using photosensitive titanium di-n-butoxide bis(2-ethylhexanoate) is employed in this study for the nanopatterning of anatase titanium dioxide (TiO₂) structure. Upon annealing at 400 °C for 1 h, the lateral shrinkage and thickness shrinkage of the TiO₂ nanostructure were 39.6% and 52.5%, respectively, which indicated an anisotropic volume loss. During UV irradiation and annealing treatment, the refractive index of UV-irradiated TiO₂ film is gradually increased by improvement in the packing density and crystallinity of the film. According to increasing UV exposure time and annealing temperature, the optical band gap (E_g) of UV-irradiated TiO₂ film is red-shifted from 3.73 to 3.33 eV due to the formation of lattice defects, vacancies and voids during the photochemical reaction and due to the effect of quantum confinement during annealing treatment. These results suggest that the refractive index and optical E_g of TiO₂ nanostructure could be controlled by tuning the UV exposure time and annealing treatment conditions. Nanopatterns of TiO₂ fabricated by direct UV-assisted nanoimprint lithography are potential candidates for use in protective coatings for optical mirrors and filters, high-reflectivity mirrors, broadband interference filters and active electro-optical devices where ordered surface nanostructures could be necessary.     

Hydrogen content and annealing of memory quality silicon-oxynitride films

Optical measurements have been made to investigate the effects of post-deposition heating to 950° in vacuum on 750°-CVD silicon-nitride films which contain approximately 5 atomic percent oxygen. The refractive index and thick-ness, determined ellipsometrically at 5461 Å for 600 A films, were unchanged by annealing within the experimental uncertainties of the measurements. Annealing, however, caused a shift of the absorption edge toward higher energy, a decrease in the etch rate, a cracking of 4500 Å films on thick-Si substrates, and an increase in the peak absorption for the SiN band. These effects are interpreted as atomic reordering and densification of the films. The absence of any significant change in refractive index or in the posi-tion of the SiN band upon annealing implies that the oxygen content is unaffected by annealing. Multiple internal reflection measurements show a large hydrogen concentration (~ 7 atomic percent) initially bound to N or to Si in the films. The most striking effect of annealing is on the SiH centers which are annealed out by one hour at 900°C, and a 20 percent reduction is observed for the NH centers. Preliminary electrical measurements indicate an increase in conductance for films annealed at 800 and 850°C; and for the same applied voltage, dielectric failure is observed after annealing at 950°C. Exposure of dangling silicon and nitrogen bonds which were initially-decorated with hydrogen is suggested to explain the higher conductance after annealing.     

退火温度对WO_3薄膜结构及气敏性能的影响

采用直流磁控溅射法制备了WO3薄膜,并在350~550℃时对薄膜进行退火处理,研究了退火温度对薄膜结构及气敏性能的影响。结果表明:退火前及350℃退火后的薄膜为非晶态,450℃和550℃退火后的薄膜为WO3–x型晶态;随退火温度的提高,薄膜厚度增加,晶粒度增大。550℃退火后薄膜的厚度,较450℃退火后薄膜厚30nm,晶粒度相差8nm;450℃和550℃退火后的薄膜,在150℃时对体积分数为0.05%的NO2的灵敏度接近于22。