DSP专用高速乘法器的设计

介绍了一种DSP专用高速乘法器的设计方法.该乘法器采用了最优化Booth编码算法,降低了部分乘积的数目,采用Wallace Tree最优化的演算法和快速超前进位加法器来进一步提高电路的运算速度.该乘法器在一个时钟周期内可以完成16位有符号/无符号二进制数乘法运算和复乘运算,在slow corner下最高频率可达220MHz以上.本乘法器是一DSP内核的专用乘法单元,整个设计简单高效.     

高速可重组16×16乘法器的设计

介绍了一种可以完成16位有符号/无符号二进制数乘法的乘法器。该乘法器采用了改进的Booth算法,简化了部分乘积的符号扩展,采用WallaceTree最优化的演算法、流水操作和超前进位加法器来进一步提高电路的运算速度。该乘法器可以作为嵌入式CPU内核和DSP内核的乘法单元,整个设计用VHDL语言实现。     

高速可重组16×16乘法器的设计

介绍了一种可以完成16位有符号/无符号二进制数乘法的乘法器。该乘法器采用了改进的Booth算法，简化了部分乘积的符号扩展，采用Wallace Tree最优化的演算法、流水操作和超前进位加法器来进一步提高电路的运算速度。该乘法器可以作为嵌入式CPU内核和DSP内核的乘法单元，整个设计用VHDL语言实现。     

一种高速NMOS并行乘法器

本文提出一种高速并行乘法器的新结构。该结构中,用Wallace树来简化改进的Booth算法,并用了一种便于用NMOS器件实现的斜进位全加器。在最后一级两位相加时,采用了具有高速进位性能的Manchester型全加器来代替一般通用的具有超前进位链的全加器,并提出了一种Manchester型全加器的新线路。该乘法器,不但门的总数比改进的Booth算法乘法器的少,且速度快。此外,它的全加器阵列形状规则,特别有利于VLSI的版图设计。     

32位高速浮点乘法器优化设计

设计了一种用于频率为200 MHz的32位浮点数字信号处理器(DSP)中的高速乘法器.采用修正Booth算法与Wallace压缩树结合结构完成Carry Sum形式的部分积压缩,再由超前进位加法器求得乘积.对乘法器中的4-2压缩器进行了优化设计,压缩单元完成部分积压缩的时间仅为1.47 ns,乘法器延迟时间为3.5 ns.     

一种高压缩Wallace树的快速乘法器设计

介绍了一种32位有符号/无符号乘法器.该乘法器采用改进的Booth编码减少了部分积个数,并通过符号扩展的优化,减少中间资源消耗,对部分积进行统一的符号操作,简化了程序设计的复杂性.采用了7:2压缩结构的Wallace树及64位Brent Kung树结构超前进位加法器,有效地提高了乘法器计算速度.整个设计采用Verilog语言编写,通过Modelsim仿真验证设计功能的正确性.采用Synopsys的Design Compiler进行基于SMIC的0.18微米标准库的综合并得到性能参数.     

一种RISC微处理器的快速乘除法运算设计与实现

定点尾数乘除法器是相应32位浮点运算的核心部件,针对工控应用,本文采用半定制方法完成了设计并且采用TSMC0.18微米工艺实现.乘法器采用基4Booth编码,通过对符号位、隐含位的处理减少了部分积的生成,并在Wallace树求和过程中,引入4∶2压缩器,加快了求和速度.除法器采用改进的SRT算法,引入商位猜测、部分余并行计算、商位修正值选择电路.乘除法器均采用了进位保留加法器提高运算速度.后端物理实现表明,乘除法器的频率分别可到227 MHz,305 MHz,整体设计具有简洁、快速、计算准确的特征.     

采用Booth算法的16×16并行乘法器设计

介绍了一种可以完成 16位有符号 /无符号二进制数乘法的乘法器。该乘法器采用了改进的 Booth算法 ,简化了部分积的符号扩展 ,采用 Wallace树和超前进位加法器来进一步提高电路的运算速度。本乘法器可以作为嵌入式CPU内核的乘法单元 ,整个设计用 VHDL 语言实现。     

FPGA中专用可重构乘法器的设计

提出了一种新的嵌入在FPGA中可重构的流水线乘法器设计.该设计采用了改进的波茨编码算法,可以实现18×18有符号乘法或17×17无符号乘法.还提出了一种新的电路优化方法来减少部分积的数目,并且提出了一种新的乘法器版图布局,以便适应tilebased FPGA芯片设计所加的约束.该乘法器可以配置成同步或异步模式,也町以配置成带流水线的模式以满足高频操作.该设计很容易扩展成不同的输入和输出位宽.同时提出了一种新的超前进位加法器电路来产生最后的结果.采用了传输门逻辑来实现整个乘法器.乘法器采用了中芯国际0.13μm CMOS工艺来实现,完成18×18的乘法操作需要4.1ns.全部使用2级的流水线时,时钟周期可以达到2.5ns.这比商用乘法器快29.1%,比其他乘法器快17.5%.与传统的基于查找表的乘法器相比,该乘法器的面积为传统乘法器面积的1/32.     

FPGA中专用可重构乘法器的设计

提出了一种新的嵌入在FPGA中可重构的流水线乘法器设计. 该设计采用了改进的波茨编码算法,可以实现18×18有符号乘法或17×17无符号乘法. 还提出了一种新的电路优化方法来减少部分积的数目,并且提出了一种新的乘法器版图布局,以便适应tile-based FPGA 芯片设计所加的约束. 该乘法器可以配置成同步或异步模式,也可以配置成带流水线的模式以满足高频操作. 该设计很容易扩展成不同的输入和输出位宽. 同时提出了一种新的超前进位加法器电路来产生最后的结果. 采用了传输门逻辑来实现整个乘法器. 乘法器采用了中芯国际0.13μm CMOS工艺来实现,完成18×18的乘法操作需要4.1ns. 全部使用2级的流水线时,时钟周期可以达到2.5ns. 这比商用乘法器快29.1%,比其他乘法器快17.5%. 与传统的基于查找表的乘法器相比,该乘法器的面积为传统乘法器面积的1/32.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its