红外热像仪在被动式超低能耗建筑性能检测中的应用

概述了红外热成像技术探测外墙热工缺陷的原理及应用现状,结合工程实例对红外热像仪的应用进行了分析,分别采用定性和定量两种方式判定热工缺陷严重等级。结果表明,利用红外热像仪可以快速得到建筑围护的温度场分布,从而判断是否存在热工缺陷,更是为建筑节能效果的评价提供了高效、准确的检测手段。     

利用红外热像仪测量材料的缺陷

介绍了利用红外热像仪检测材料内部缺陷的方法和实验结果。从传热学理论对有缺陷区域和无缺陷区域的温度进行了分析     

用红外热像仪与红外测温仪诊断电气设备故障的对比研究

电气设备是故障多发装置。利用红外测温仪或红外热像仪能够检测出设备发热异常部位并确定其表面温度,再结合红外诊断标准便可对异常设备的故障严重程度进行判别,从而实现对电气设备的故障诊断。针对电气设备控制箱电气元件的发热缺陷,利用ST80+红外测温仪与FLIR E320红外热像仪进行了温度监测,并通过运用表面温度法和相对温差法进行故障严重程度诊断,对两种设备监测诊断的差异进行了分析。结果表明,利用红外热像仪能较准确地监测诊断出电气元件的过热缺陷,利用红外测温仪能检测出多数控制箱电气元件过热缺陷,但对部分缺陷的严重程度等级判别低于热像仪的判别结果。     

预测性维护——温度异常分析

本文通过描述设备预测性维护的几个案例,向大家分享如何正确使用“红外热像仪”及利用该仪器在维护工作中及时发现问题与解决问题的方法。解决以往只能靠维护人员凭借经验进行判断,没有科学依据的问题。“红外热像仪”能帮助测试人员对现场设备温度数据进行存储、并利用软件进行后台分析,及时发现设备温度变化量。通过科学分析,及时找出温度变换的真正原因,并正确地进行预防性处理,消除设备隐患。     

基于红外热像技术的服装舒适性研究

根据热辐射理论和红外热像仪的测温原理,建立了基于红外热像技术的服装舒适性研究的测试平台,并用红外热像仪直接测量不同环境里的服装在穿着状态下表面温度场的分布。通过采集到的热图像来进行温度场分析和数据处理,直观判断出服装在真实穿着条件下衣内的实际温度变化情况,进而推出服装及服装面料的隔热性能。通过对紧贴皮肤部位的服装面料的最高温度来比较服装面料的热阻大小,从而判断整个服装隔热值的相对大小。分析了穿着实验的客观结果和主观评价结果,并得知三种实验服装中50／50大豆／棉服装的热湿舒适性能最好。红外热像技术测评方法在服装热舒适研究领域和实际应用中不失为一种行之有效的方法,是判断服装的热舒适性能的重要工具之一。     

红外热成像测温技术及其应用

简要介绍了红外热成像温度测量技术的工作原理和普通红外热像仪的基本组成，以及利用红外热像仪进行温度测量的一些应用实例和使用过程中的一些经验。     

红外热像仪测温精度分析

介绍了红外热像仪的工作原理和测温原理,分析了影响红外热像仪测温精度的各种因素,从理论上推导了各因素的误差对测温精度影响的数学表达式,计算了不同温度条件下不同发射率材料的测温误差曲线,比较了中、长波红外热像仪在不同温度范围内的测温精度。     

红外热像测温技术及其应用研究

阐述红外热像测温技术的工作原理和红外热像仪的基本组成,综述了红外热像仪测温技术的发展,从技术层面剖析了红外热像仪测温存在的问题,介绍了国内外在红外热像测温技术方面的研究热点,例举了利用红外热像仪进行温度场测量的应用实例,同时展望了未来的发展方向.针对红外测温领域中的理论、仪器及应用进行了较为详细的分析和总结.     

距离对红外热像仪测温精度的影响及误差修正

通过分析红外热像仪测温原理,得出距离是影响测温精度的因素之一.为了提高测温精度,设计了距离对红外热像仪测温影响的实验.首先利用黑体对红外热像仪进行标定,然后在不同距离处对黑体进行测温.实验结果表明,距离的变化对测温精度有较大影响.通过整理实验数据,得出了两种温度下距离对测温精度的影响曲线,并拟合出了误差修正公式.经过误...     

CO2激光辐照下玻璃表面温度分布实验研究

为了研究激光预热玻璃温度场分布,采用实验和数值计算相结合的方法,利用红外热像仪测温装置,对普通钠钙平板玻璃试件在CO2激光辐照下表面的温度进行了测量,并利用热电偶对红外热像仪进行了校正,得到了真实的温度场,对实验和理论计算进行了比较。结果表明,实验得到的温度变化规律与数值计算基本一致。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Call for Papers

正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its