纳米金表面修饰提高压电免疫传感器性能研究

在石英晶体微天平的金电极上通过1,6-己二硫醇交联组装纳米金颗粒修饰传感器表面,同时结合蛋白A与抗体的Fc段特异性结合的特性定向固定人IgG构建压电免疫传感器,并用于羊抗人IgG的检测.实验结果表明,与未经修饰相比,纳米金颗粒组装修饰金电极后能明显提高压电免疫传感器的检测灵敏度、重现性和再生能力等重要性能指标,修饰后的传感器也具有非常好的在线再生性能.     

HMDS改性后的纳米氧化锌的湿度响应特性研究

以石英晶体微天平传感器为平台,研究六甲基二硅胺烷(HMDS)处理前后的纳米ZnO作为敏感膜湿度敏感特性。用HMDS处理后的纳米ZnO膜表面呈厌水性,同未用HMDS处理的纳米ZnO膜相比,对湿度的响应敏感度明显降低。进一步的研究发现,用HMDS处理后的纳米ZnO膜对有机气体,如乙醇等,仍有很好的响应。该特性可被用来开发具有对水蒸汽具有抗干扰能力的气体传感器。     

基于能量传输模型的QCM负载效应研究

为准确、有效地区分引起石英晶体微天平(QCM)频偏的质量效应与阻尼效应,运用能量传输模型(ETM)的基本原理,推导出液体粘度和密度的乘积与石英晶体谐振器表面最大的振动幅度之间的显性函数关系式。可通过测试QCM的谐振频率与幅值信息将其负载效应分开,为QCM免疫传感器在医学中的诊断提供了一种理论基础。     

具有质量和电化学复合敏感效应的新型QCM生物传感器研究

石英晶体微天平(QCM)是一种传统的质量敏感型传感器,具有灵敏度高及响应时间短等优点。为拓展QCM技术在液相生物分子传感领域的应用,该文通过电化学方法在QCM表面沉积生物分子功能化的导电高分子后,成功制备了链霉亲和素敏感的QCM传感器。该传感器不仅具有对链霉亲和素的质量和电化学复合敏感效应,而且具有优异的抗其他蛋白干扰能力,有进一步应用于液相生化传感和疾病检测的潜力。     

石英晶体传感器特征阻尼理论的实验验证

本文发展了石英晶体传感器的特征阻尼理论，引入特征阻尼向量和特征阻尼角来分析石英晶体传感器在表现负载发生各种变化时的输出响应，通过研究ＮａＣｌ溶液在石英晶体电极表面的蒸发过程和沉积于电极表面的固体ＮａＣｌ在高湿环境中的潮解过程，直接观察了石英晶体传感器在质量负载和液体阻尼负载相互转变过程中的谐振频率和振荡幅值的变化情况，实验结果证明了特征阻尼理论的正确性。     

压电免疫传感器的质量灵敏度分布优化设计

从石英晶体微天平(QCM)质量灵敏度表达式出发,分析了影响其质量灵敏度分布的因素。在此基础上设计了一种新型电极配置结构的QCM,并利用9MHz的QCM仿真。仿真结果显示,在全电极区域,新型电极结构比圆形电极结构的QCM质量灵敏度分布均匀。最后,采用10 MHz的QCM免疫传感器对卵巢癌进行了实验验证,结果表明,NuTu-19抗体质量在74³70ng内,频率呈线性变化,说明改进电极结构的QCM免疫传感器具有较好的质量灵敏度分布。     

多通道石英微天平振动耦合分析

应用明德林的二维压电板理论，用有限元方法求解并分析了两圆形石英晶体微天平(MQCM)的设计参数对频率耦合的影响。通过选取合适的尺寸设计参数，可有效地使两圆形石英晶体微天平(QCM)的耦合减少到最小，指出振动耦合现象的产生是由一谐振元的基模能与另一谐振元的泛音模发生强烈耦合引起的；提出了优化设计MQCM的建议。     

QCM传感器差频信号的获取

分析研究了石英晶体微天平(QCM)传感器的工作原理.针对其敏感元件的晶片可能会受到不同因素的影响而导致输出稳定性下降的特点,介绍了利用D触发器产生差频提取频率信号的方法.降低了因环境因素对传感器造成的影响、抑制了频率漂移,提高了微天平的稳定性,使传感器的性能得到明显提高.     

真空电子技术

O462007030118用扫频测量技术研究石英晶体微天平/崔苇苇,孔涛,阴泽杰,朱大鸣(中国科学技术大学近代物理系)//核电子学与探测技术.―2006,26(2).―255～256.石英晶体微天平是一种高灵敏的质量检测仪器,已经用于液相、气相、镀膜、生物大分子等方面的研究。简单介绍了一种新的思     

石英晶体微天平研究核酸探针的杂交反应模型

核酸探针杂交是核酸研究中一项最基本的实验技术。压电基因传感检测技术可以实时动态监测电极表面核酸杂交反应。该文导出了核酸探针在石英晶体微天平电极表面上的杂交反应动力学模型,并通过实验对导出模型进行了验证、计算出相关动力学参数。相关系数为0.993。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its