微波脉冲窄缝耦合的数值模拟方法

本文应用一种近似方法，结合时域有限差分法，模拟了微波脉冲与腔体上有限厚度孔缝的线性耦合过程，给出了耦合场对入射波载频、入射场偏振方向、腔体壁电导率以及孔缝尺寸的依赖关系，得出了微波脉冲与孔缝耦合的共振效应和增强效应等规律。     

微波脉冲与带矩形窄缝腔体耦合多峰共振特性的研究

本文利用时域有限差分法(FDTD),对微波脉冲与不同尺寸矩形窄缝的线性耦合过程进行了数值模拟研究.利用耦合函数,分析厂共振条件与窄缝尺寸的关系,发现矩形窄缝耦合存在多峰共振现象,并对前人得到的耦合共振公式进行了推广.     

微波脉冲对电容近炸引信腔体耦合特性分析*

利用有限积分法仿真分析了微波脉冲对电容近炸引信腔体的耦合过程,分别分析了微波入射方向、 电场极化方向和微波频率对引信腔体耦合特性的影响。结果表明:微波入射角度为30°、电场极化方向与弹轴夹角 为30°时,耦合系数最大;引信探测电路位置处的微波场最强;随着微波频率增大,耦合系数存在明显减小的趋势,同 时存在多个共振增强的频率点。分析表明,对于环状孔缝而言,其共振频率与矩形孔缝不同,且数值与环状孔缝的 圆周长成反比。     

1 kW微波源机箱电磁耦合的并行FDTD模拟

微波源机箱的不同面板上开有不同数量和大小的矩形孔缝和散热通风孔,电磁脉冲可以通过机箱上的孔缝耦合进入微波源内部,对内部电路和设备造成干扰。通过自动网格剖分技术实现了1 kW微波源的快速建模,采用并行时域有限差分（FDTD）算法模拟了不同极化方向下高斯脉冲正入射1 kW微波源机箱的耦合问题,分析了微波源机箱的电磁脉冲耦合规律。研究结果表明,数值计算结果与电磁软件仿真结果吻合得比较好,电磁脉冲的极化方向对耦合进入微波源箱体内的电场强度影响不大,微波源机箱中心点的谐振特性明显。     

微波脉冲与带缝非金属腔耦合的数值模拟研究

应用时域有限差分法(FDTD)模拟计算了微波脉冲与带缝非金属腔体的线性耦合过程.在正弦波凋制的高斯脉冲源激励下,分析了耦合场在腔体内的分布情况,总结了相对介电常数、腔壁厚度、孔缝尺寸等因数对耦合特性影响的基本规律.结果表明:在入射电场方向腔体中心轴线上的耦合场基本保持不变,垂直于入射电场截面上耦合场关于截画中心点呈对称分布;耦合进腔体的能量随厚度的增加和介电常数的增大而减小,但介电常数的影响更加明显,且随孔缝面积的增大而增大,面积一定时,随纵横比的增大而增大;孔缝中心处的电场耦合系数峰值随介电常数的增大呈近似线性下降,而腔体中心处呈振荡减小,在相对介电常数为6左右电场时域峰值达到最大;腔体内耦合磁场的变化规律与电场的类似.     

有孔腔体屏蔽效应分析的混合模型

对于带矩形孔缝的矩形腔,利用传输线模型求得孔缝上的近似电场,并以此为等效磁流,利用腔体中的并矢格林函数,估算腔体中的耦合场强与屏蔽效应,并推广到孔缝偏离中心的情形.数值结果与其他方法以及实测值吻合的很好,验证了方法的有效性.分析了孔缝偏离中心、孔缝尺寸变化、平面波斜入射时的屏蔽效应,数值结果表明:孔缝偏离中心使腔体中心...     

矩形金属机壳孔缝电磁耦合特性研究

针对矩形金属机壳上孔缝在高功率电磁环境下的电磁耦合问题,提出了一种使用模式匹配法和基于矩量法求解的混合位积分方程来分析孔缝电磁耦合特性的全波混合算法.该算法考虑了高次模、孔缝形状、孔缝厚度以及入射波极化方向等因素对电磁耦合特性的影响.通过将数值仿真结果与经典孔缝电磁耦合模型的测试结果进行对比,验证了该算法具有较高的准确性,与经典的时域有限差分法相比,该算法具有很高的计算效率.研究结果表明:有孔金属机壳在外界强电磁辐射条件下具有明显的谐振效应,在谐振频率点,耦合进入机壳的电场将大大增强,且孔缝附近以及机壳中心的耦合电场峰值要高于其他位置的耦合电场峰值;随着机壳表面上孔缝厚度的增加,耦合进入其内部的电场也在减弱;当机壳上的孔缝为矩形且入射波的电场极化方向平行于矩形缝隙的短边时,对应于该极化方向的孔缝电场耦合强度是所有极化方向中最强的.     

直升机平台孔缝耦合仿真分析

在切向矢量有限元软件HFSS中,对某直升机在电磁辐射环境下进行了孔缝耦合的仿真。模拟了飞机由于外部加改装所需开孔的大小和数量,并对直升机外加发射源干扰,来反映机内电磁环境对飞机机载电子设备的影响。对孔缝耦合进行仿真,将仿真结果与DO-160F标准进行比对分析。同时,研究了机内辐射能量与频率、相位的关系,以及机身不同位置下的辐射能量。通过数值分析和仿真结果得出规律性结论,为直升机加改装设备开孔提供理论依据。说明孔缝耦合的电磁仿真分析在航电系统电磁防护的工作中具有重要的指导意义。     

电磁脉冲通过孔缝到系统内部的耦合约束

介绍了核电磁脉冲通过孔缝耦合到系统内部的最大能量计算方法，给出了倒指数型电磁脉冲最大耦合能量的解析表达式。该模型在定孔总截面正比于波频率4次方时，计算出通过孔耦合到腔体内部的最大能量，实现电磁耦合能量的计算。倒指数脉冲模型的理论计算结果，可以对电子设备电磁脉冲的保护具有重要意义。     

基于FDTD方法的同轴电缆孔缝辐射效应研究

利用时域有限差分法(FDTD)研究了同轴电缆传输数字脉冲信号时的孔缝辐射效应。文中首先推导了三维柱坐标系下完全匹配层(PML)的差分表达式，并给出保证其解稳定性的更为严格的时间步长公式。然后利用FDTD法分析了数字信号经同轴电缆孔缝的辐射效应，对孔缝内外的电磁场及其远场进行了数值分析和计算。处理孔缝边界时，用级数展开和积分方程得到金属拐角处电磁场的近似解。最后对结果进行了分析。     

窄缝耦合共振特性分析

应用时域有限差分法模拟了正弦波和电磁脉冲对窄缝的耦合过程，计算了直缝和扭曲缝的耦合穿透功率和能量，通过分析窄缝的耦合传输系数变化曲线，得出窄缝发生耦合共振的条件和规律。并通过直缝与扭曲缝耦合情况的比较，表明了扭曲缝具有较好的电磁防护能力。     

NUMERICAL STUDIES ON RESONANT AND ENHANCEMENT EFFECTS FOR COUPLING OF MICROWAVE PULSES INTO NARROW SLOTS

In this paper, modifications to the finite-difference time-domain(FD-TD) method for modeling microwave pulse coupling into a slot, which is much narrower than one conventional FD-TD cell, are discussed. The coupling process of microwave pulse into a slot is studied by using the modified FD-TD method, and the dependence of microwave coupling on slot sizes, the carrier frequencies and the polarization directions of the incident waves is analysed. Resonant and enhancement effects which occur in this process are observed. The condition at which the resonant effect takes place is also presented.     

The influence of microwave pulse repetition frequency on the thermal burnout effect of a PIN diode limiting-amplifying system

This paper analyzes the influence of the microwave pulse repetition frequency on the thermal burnout effect of a PIN diode limiting-amplifying system. Based on the study of the single-shot microwave pulse thermal burnout effect and by introducing a new assumption that the heat dissipation of the electric field energy and the nonequilibrium carrier energy during the microwave pulse intervals can be neglected, the theoretical thermal burnout model in our previous study is extended to be suitable for repetitive microwave pulses. The theoretical relationship among the pulse number, the pulse repetition frequency, the pulse width and the thermal burnout power threshold is obtained by theoretical derivation. Because the assumptions are introduced, the theoretical relationship requires that both the whole length of a repetitive microwave pulse and the pulse width in a cycle of a repetitive microwave pulse should be between 10 ns and 10 μs. The results obtained by the theoretical relationship are in good agreement with the simulation results obtained by our self-designed device-circuit joint simulator, which verifies the correctness of the theoretical analyses, modeling and derivation. By fitting at least two sets of simulation or experimental data, the theoretical relationship can be used to predict the thermal burnout power thresholds of PIN diode limiting-amplifying systems under microwave pulse injections with different pulse parameters. It can greatly reduce the simulation or experimental costs and could be helpful for the design of a radio frequency receiver.     

Effect of velocity mismatch and microwave attenuation ontime-domain response of traveling-wave electrooptic modulators

The dynamic response of a traveling-wave (TW) electrooptic phase modulator is treated using a Fourier transform technique. An integral expression for the induced phase shift which takes into account the optical-microwave velocity mismatch and the microwave attenuation is derived. In the case of a Gaussian modulating pulse and negligible microwave attenuation, the temporal dependence of the modulated pulse amplitude can be expressed in terms of error functions. Calculated pulse shapes showing the transition from a Gaussian to a flat top output pulse with increasing phase mismatch in the absence of microwave attenuation are presented. The effect of microwave attenuation on pulse shape, amplitude, and width is also explored. The method used to obtain these results is generally applicable to the time-domain analysis of TW modulators     

Scattering Matrix Description of Microwave Resonators

In this paper an analysis of the scattering matrix coefficients (reflectance and transmittances) of the microwave resonators is presented. Two general cases of resonator couplings are considered. One of them is a multiport with one port terminated by the resonator, the other is a resonator coupled, in various ways, to a number of transmission lines. The effect of external circuits on the Q and resonant frequency of the resonator has also been examined. Fundamental parameters for the commonly used microwave resonator couplings are shown in Table L     

The influence of microwave pulse width on the thermal burnout effect of an LNA constructed by a GaAs PHEMT

In this paper, the influence of microwave pulse width on the thermal burnout effect of a low noise amplifier (LNA) constructed by a GaAs pseudomorphic high electron mobility transistor (PHEMT) is theoretically analyzed and further verified with simulation and experimental results. By analyzing the electrical procedure and the thermal procedure, a theoretical model of the thermal burnout effect of the studied LNA is established according to the properties of microwave pulses and the structure of the LNA and GaAs PHEMT. Based on the theoretical model, the analytical relationship between the microwave pulse width and the thermal burnout power threshold is further obtained. According to the limitations caused by the approximations in the process of modeling, the available microwave pulse width range for the proposed analytical relationship is more than a nanosecond level and less than a microsecond level. The coefficients of the proposed analytical relationship can be determined by fitting at least two sets of simulation or experimental results, which can greatly reduce the simulation or experimental costs. Finally, the analytical relationship is verified by simulation and experimental results. The results show that the proposed analytical relationship is suitable to estimate the thermal burnout power threshold for a given microwave pulse width within the limit of microwave pulse width range.     

Coupled-mode analysis of an electrooptic frequency shifter

In this paper, we present a semiclassical wave equation analysis using a coupled-mode expansion formalism to study the effect of a microwave field on a train of short optical pulses co-propagating in a traveling-wave modulator structure. This device can continuously shift the central frequency of light pulses. We demonstrate the effect of the applied field on the light spectrum, the dependence on the relation between microwave wavelength and pulse length, and the effect of changing the interaction length or the power of the applied microwave field. The results of the calculation of these effects are presented.     

Modeling of Dynamic Effects in a Laser-Driven Semiconductor Switch of High-Power Microwaves

Problems of high-power microwaves penetrating into and reflecting from a semiconductor (silicon) plate with non-stationary processes are investigated. The plate is the basis of switches activated by laser-driven photoconductivity which changes its properties when heated by the switched microwave power. Analytical criteria for the stationary solutions of the activated (quasi-metallic) and deactivated (dielectric) states of the switch under the conditions of high-power microwave heating and external cooling are found. Results of numerical simulations are also given for the problems of the switch activation by microwave heating initiated by pulsed laser radiation, which increases the carrier density rapidly. Numerical simulations are carried out using the finite-difference time-domain method with the unsplit perfectly matched layer absorbing boundary conditions. We demonstrate various types of solutions depending on the basic parameters of the problems - microwave field intensity, laser pulse energy and semiconductor doping.     

The influence of microwave pulse width on the thermal burnout effect of a PIN diode limiting-amplifying system

This paper analyzes the influence of the microwave pulse width on the thermal burnout effect of a PIN diode limiting-amplifying system. Based on theoretical analyses and simulation, the relationship of the burnout effect on a PIN diode limiter and a PIN diode limiting-amplifying system is obtained first. By adopting an absorption efficiency factor, the theoretical model of the relationship between the microwave pulse width and the burnout power threshold for the PIN diode limiting-amplifying system is obtained. The proposed theoretical formulas can be determined by using at least two sets of simulation or measurement results to fit the constant coefficients, which can greatly reduce the simulation or experimental costs. The results obtained by the theoretical formulas are in good agreement with the numerical simulation results obtained by our self-designed device–circuit joint simulator, which verifies the correction of the theoretical analyses and modeling. The available microwave pulse width range for the proposed theoretical formulas is from 10 ns to 10 μs. In consideration of the potential threat of microwave pulses, the system-level study results obtained in this paper will be helpful for the design of the radio frequency receivers.