基于Memetic算法的电路演化设计研究

 针对传统演化算法在设计数字逻辑电路时存在的演化速度缓慢和容易陷入局部最优解等问题,设计了一种Cartesian进化编程编码的电路演化Memetic算法,采用遗传算法作为全局搜索方法,并设计了适合电路演化的基本门种类局部搜索策略.通过一位全加器电路证明所提出的Memetic硬件演化算法的搜索能力,实验证明所提出的算法能够有效地完成进化任务,具有较强的全局快速和局部搜索能力.     

复杂数字电路的分解演化研究

针对制约演化硬件技术发展所面临的可扩展性问题,提出了一种GD．BIE分解演化方法,它将待演化电路按照先输出分解后输入分解的顺序,逐步分解为多个子电路,最后将演化成功的子电路有规律的综合完成目标电路的演化设计。实验证明,该分解方法能有效解决大规模电路演化中存在的染色体编码长、最大适应度高、演化代数多、输入输出真值表组合复杂的问题,为较大规模电路演化提供了一种有效途径。     

小生境演化算法下的WDCT图像压缩方法

针对传统WDCT图像压缩编码算法频率卷曲参数的难选取问题,提出了小生境演化算法下的WDCT图像压缩方法(NEAWDCT).利用小生境演化算法全局寻优的特点,与WDCT图像压缩编码方法相结合,达到自适应选取最优频率卷曲参数的目的.针对频率卷曲参数特征,设计染色体编码方式及演化算子,以加快收敛速度.由于图像能量多集中于低频部分,选择特定范围内的数值初始化种群,不仅能加快算法收敛速度,还保留了种群的多样性.实验结果表明,利用新的NEAWDCT算法生成的WDCT矩阵能有效提高峰值信噪比.     

一种新的基于真值表分解技术的电路加速演化策略

硬件演化技术在电路演化过程中具有自组织、自适应、自修复性能,具有重要的工程应用价值,硬件演化技术能够实现的核心就是演化算法。目前中等规模及大规模电路演化的时候存在演化速度慢等缺陷,直接影响电路演化的时效性。提出了一种新颖的电路加速演化策略,即基于真值表分解的电路演化策略,从不同的角度对电路演化算法进行了改进,有别于常规的改进演化算法。通过对典型电路进行仿真分析,证明了所提出的加速演化策略的有效性,并且具有重要的应用价值。     

基于强化学习和分块并行的演化硬件方法

演化硬件（EvolvableHardware,EHW）是可编程逻辑器件和进化算法的结合,可根据不同演化目标自主动态调整自身电路结构.在演化硬件方法中,由于其自演化特性和上层遗传算法为参数敏感型,面对不同演化对象自适应性较差.同时遗传算法有早熟缺陷,在大型演化目标后期经常无法演化到目标真值表,成功率较低.本文在传统演化硬...     

基于基因表达式程序设计的电路优化算法研究

基于Xilinx Virtex-Ⅱ系列FPGA控制逻辑块(CLB)矩阵特点以及每一个控制逻辑块能实现任何2输入1输出的逻辑功能的特点,提出了一种基于基因表达式程序设计的电路优化算法。在该算法中染色体由按线性方式连接的逻辑单元矩阵组成,采用的遗传操作包括变异和杂交,并利用真值表进行适应度评估。实验证明,所得到的电路结构优于传统方法。     

一种可测性调度分配方法

提出一种基于演化算法的可测性调度分配方法.应用演化算法,在调度和分配过程中研究电路的可测性设计.该方法的贡献是:给出了三个可测性准则;设计了可测性目标函数;提出了一种新颖的演化编码和演化操作,提高了搜索速度和解的质量.实验结果验证了该方法的可行性.     

量子计算与遗传算法的融合及其在计算机通信网优化中的应用

该文将量子计算与遗传算法进行融合,其核心是在常规遗传算法中将量子的态矢量引入遗传编码,并自适应地进行量子旋转门的调整以实现染色体的演化,使算法具有更好的种群多样性和全局寻优能力。通过求解计算机通信网优化问题的实例,结果表明:新方法比采用常规遗传算法具有明显的高效性。     

基本电子电路

TN7 2004040451用遗传算法实现信号转换电路的非线性校正/温秀兰,宋爱国,崔建伟,(2{高桂本(东南大学)11数据采集与处理一2003,18(3)一306一309采用了遗传算法的最新成果,提出了一种新颖的基于实数编码的改进遗传算法用以校正信号转换电路的非线性误差.该算法采用基于代沟最小的     

基于猴王遗传算法的演化硬件

演化硬件作为新的硬件载体,具有自组织、自适应、自修复的能力。本文设计了一种由查找表(LUT)和D触发器构成的基本演化硬件单元,能够满足组合逻辑电路和时序逻辑电路的设计要求。同时设计了兼容组合逻辑电路和时序逻辑电路的适应度评估函数。利用该模型对基于遗传算法的演化硬件和基于猴王遗传算法的演化硬件参数进行了优化设计。分析表明遗传算法的变异概率 取值应在0~0.01之间,交叉概率对算法的性能影响可以忽略;猴王遗传算法的保留概率 取值应在0~0.85之间,变异概率 应在0~0.01之间。对比分析了遗传算法和猴王遗传算法的性能：基于猴王遗传算法演化硬件的运算量只有基于遗传算法演化硬件的1/4,且能得到更接近目标电路的电路结构。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-