一种220GHz 波段太赫兹合成孔径成像雷达

微波频段的机载合成孔径成像雷达在对地观测方面具有广泛应用,但其合成孔径成像积累时间长,成像帧率低,提高雷达工作频率能够减小合成孔径所需转角,提高成像帧率。设计了一种工作在220GHz 波段的太赫兹合成孔径成像雷达系统,采用收发天线分置、发射宽带线性调频连续波的体制,最大信号带宽4. 8GHz,输出信号功率约20mW。宽带回波信号幅度相位经外标校补偿,通过成像试验,验证了太赫兹ISAR 与SAR 成像分辨率约3.2cm,可实现5Hz 的成像帧率,证明太赫兹波段能够大幅提升成像帧率,满足快速成像的要求。     

雷达接收机混频交扰抑制的研究

设计实现了一个雷达接收机用的二次变频接收前端组件,考虑了主要技术指标及本振和信号通道寄生频率的影响,解决了一本振和二本振交调在信号通道内产生的交调干扰问题.通过理论计算预先确定了频率干扰点,合理选择多次混频组件中频,从而减少了组合频率干扰,对交调与互调起到一定的抑制作用.同时对接收前端组件因频率干扰、交调失真、噪声调制等因素引起噪声系数变差的原因进行了分析,提出抑制交扰的措施,解决了组件噪声系数恶化的技术问题.结果表明,该接收机前端组件在S波段、工作频率400 MHz带宽范围噪声系数小于1.0 dB.     

220 GHz太赫兹合成孔径雷达

针对复杂战场环境实时侦察的需求,介绍了一种220 GHz太赫兹合成孔径雷达(SAR),重点研究了雷达系统设计、宽带信号补偿和SAR成像实验。雷达信号采用线性调频连续波模式,中心频率为216 GHz,带宽为4.8 GHz,采用去斜处理体制,完成了宽带一维距离像实验和SAR成像实验。实验结果表明雷达成像分辨力达到了3 cm。     

利用140 GHz雷达实现目标缩比模型的RCS测量与成像

构建了140 GHz频段的单基雷达用于缩比模型的高分辨力成像和雷达散射截面积(RCS)测量。雷达的相干收发机用全固态的方式实现,其发射信道采用一个Ka波段频率源驱动的倍频链作为本振,在5 GHz的带宽内实现了0.5 mW的输出功率,接收机采用基于肖特基二极管的次谐波混频器实现相干接收。该雷达RCS测试系统显示出高信噪比的特点,获得了大于100 dB的动态范围和3 cm的成像分辨力。除了可实现对目标的逆合成孔径成像,该系统还可完成对旋转目标全方位角的RCS测量。利用该系统对某航空母舰1/720th模型进行了成像实验和RCS测量,模拟了全尺寸目标在P波段的结果。所获得的数据根据缩比定律可为P-波段雷达设计提供参考。     

基于AlGaN/GaN HEMT太赫兹探测器的340 GHz无线通信接收前端

利用天线耦合AlGaN/GaN HEMT太赫兹探测器的自混频和外差混频效应,分别设计并测试了340 GHz频段直接检波式和外差混频式接收机前端。通过接收机信噪比的测量和接收功率的定标,得到了两种接收机的等效噪声功率。直接检波模式下探测器的响应度约为20 mA/W,直接检波模式和外差混频模式下接收机的等效噪声功率分别约为?64.6 dBm/Hz1/2和?114.79 dBm/Hz。在相同的载波功率和接收信号带宽条件下,当本振太赫兹波功率大于?7 dBm时,外差混频接收的信噪比优于直接检波的信噪比。当本振功率大于0 dBm时,外差混频接收机表现出优良的解调特性,其信噪比高出直接检波接收机的信噪比10 dB以上。     

超宽带太赫兹调频连续波成像技术

太赫兹调频连续波成像技术具有高功率、小型化、低成本、三维成像等特点,在太赫兹无损检测领域受到了广泛关注。然而由于微波及太赫兹器件限制,太赫兹信号带宽难以做大,从而制约了成像的距离向分辨力。虽然高载频可实现较大宽带,但伴随的低穿透性和低功率会限制太赫兹调频连续波成像系统的应用场景。因此,聚焦于太赫兹波无损检测领域,提出一种时分频分复用的114~500 GHz超宽带太赫兹信号的产生方式,基于多频段共孔径准光设计,实现超带宽信号的共孔径,频率可扩展至1.1 THz。提出一种频段融合算法,实现了超宽带信号的有效融合,距离分辨力提升至460 μm,通过人工设计的多层复合材料验证了系统及算法的有效性,并得到封装集成电路(IC)芯片的高分辨三维成像结果。     

一种接收超宽带射频信号的方法研究与仿真分析

在射频接收机的设计中,由于滤波器的带宽和频率源的限制,一般接收机的带宽无法达到几百兆的超带宽范围.设计一种超带宽射频信号的接收方法,通过五路功分和合理选择射频器件,可以在保证信号指标要求的情况下,有效地对250 MHz带宽的射频信号进行接收和下变频.最后通过ADS软件进行射频仿真分析,验证了本接收方法的主要指标满足要求.     

GPU 加速条件下基于相位补偿反投影算法的太赫兹 ISAR 成像

介绍了0.22 THz步进频率雷达系统及二维高分辨率ISAR成像方法。该雷达系统的合成带宽为12GHz,可以同时实现近场及远场成像。在近场条件下,该系统在距离向和方位向实现二维高精度成像,通过相位补偿反投影算法,太赫兹ISAR图像的分辨率可以达到厘米量级。研究结果表明,采用同样的太赫兹频率步进雷达系统,基于反投影算法的太赫兹ISAR成像可以实现更高的精度和更精细的分辨率。为了加速成像过程,采用了GPU的加速平台,该方法为进一步开展近场高分辨率雷达成像,特别是太赫兹波段雷达成像提供了研究基础。     

太赫兹宽带分谐波混频器设计

太赫兹分谐波混频器的变频损耗、噪声系数等指标与基波混频器相近,且本振频率为射频频率的一半,大大降低了本振源的设计难度和制作成本,是高性能太赫兹接收前端的关键部件。本文介绍了一种覆盖全波导带宽的太赫兹宽带分谐波混频器的设计,对电路中射频波导至悬置带线过渡结构和本振中频双工器进行仿真和优化设计。并以0.14~0.22THz分谐波混频器为例进行设计和制作,测试结果表明0.14~0.22THz分谐波混频器在全波导频段内最大变频损耗低于15d B,中频3d B带宽大于20GHz。     

基于肖特基二极管的140 GHz次谐波混频器

肖特基二极管混频器是毫米波太赫兹频段的超外差接收机中的关键器件,其研制对于太赫兹通信和雷达应用具有重要意义。本文描述了一种基于低寄生参量肖特基Z-极管DBES105a的140GHz二次谐波混频器（SHM）的仿真设计和制作测试。为了计算二极管特性阻抗,通过对二极管半导体物理结构的研究,建立了肖特基二极管三维电磁仿真模型。次谐波混频器采用波导腔体悬置微带线结构,通过HFSS＋ADS联合仿真设计。仿真结果显示,在65GHz,7dBm本振信号激励下,140GHz频点处的SSB转换损耗为6．3dB,1dB转换损耗带宽为14GHz,DSB噪声温度小于400K。测试结果显示,最低SSB转换损耗为26dB／135GHz,3dB转换损耗带宽为8GHz。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its