共查询到19条相似文献,搜索用时 125 毫秒
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采用电阻率为4.8.cm的p型硅片和10.cm的n型硅片,通过高温扩散法制备出了Fe掺杂的补偿硅材料。在室温避光条件下,测量样品电阻率ρ,并用XRD对扩散后的样品进行分析,研究了Fe掺杂对不同导电类型硅材料电阻率的影响。结果表明:相对于n型硅材料,深能级杂质Fe掺杂对p型硅材料电阻率的影响更大,其Fe掺杂p型硅材料电阻率远大于Fe掺杂n型硅材料;当p型硅表面Fe扩散源浓度为1.74×10–5mol/cm2时,在1 200℃下扩散1 h后,材料具有最大电阻率7 246.cm。 相似文献
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采用电阻率为4.8Ω·cm的p型硅片和10Ω·cm的n型硅片,通过高温扩散法制备出了Fe掺杂的补偿硅材料.在室温避光条件下,测量样品电阻率p,并用XRD对扩散后的样品进行分析,研究了Fe掺杂对不同导电类型硅材料电阻率的影响.结果表明:相对于n型硅材料,深能级杂质Fe掺杂对p型硅材料电阻率的影响更大,其Fe掺杂p型硅材料电阻率远大于Fe掺杂n型硅材料;当p型硅表面Fe扩散源浓度为1.74× 10-5 mol/cm2时,在1 200℃下扩散1h后,材料具有最大电阻率7 246Ω· cm. 相似文献
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高补偿硅的阻–温特性 总被引:5,自引:2,他引:3
采用5Ω·cm的p型单晶硅,通过在高温下扩散金属锰的方法,可以得到高补偿硅.笔者选择没有光照下,室温电阻率为5.84×104Ω·cm的样品,进行测量电阻随温度的变化关系(温度从77 K上升到300 K).测试结果表明:在没有光照条件下测试时,电阻随温度的变化同普通的半导体;但在受到光照时,却出现极不相同的情况,这种不同,可能来自所掺杂的硅是一种光敏材料及掺入的杂质是一种深能级杂质. 相似文献
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高补偿硅的光敏感特性 总被引:2,自引:1,他引:1
对电阻率为5 ·cm的p型单晶硅,在高温条件下采用扩散金属锰的方法,得到高补偿硅。并在室温(25℃)和液氮温度(196℃)下,测试了这种高补偿硅材料对光强的敏感性。测试结果表明:这种材料是一种光敏感材料,其敏感性受外加的电压、样品的温度及补偿后样品的电阻率影响。 相似文献
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低质量Si材料制备太阳电池 总被引:2,自引:2,他引:0
通过对比不同硼-磷(B-P)补偿程度的低成本、高杂质含量硅材料制备的太阳电池的性能,发现在含B和其它杂质含量都比较高的Si材料中通过掺入P补偿过多的B可以提高低质量Si片的电阻率、增加少数载流子寿命从而提高电池效率同时还能够减少电池性能的衰减.利用低质量Si材料(B含量2*10-6wt)制作出了效率达到14%左右的大面... 相似文献
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本文叙述了衬底掺杂浓度对扩散杂质薄层电阻的影响:衬底掺杂浓度N_b的变化及其对扩散系数D的修正;扩散结深X_i与N_b的关系;以及扩散杂质由于衬底掺杂浓度的变化而引起的杂质补偿(可以正补偿或负补偿),从而使扩散杂质的方块电阻发生较大改变,在TTL数字电路中电阻值发生较大偏离,导致电路性能的严重劣变甚至失效.本文针对外延片材料电阻率的偏离而引起电路电阻值的较大改变,试图应从理论和实践上找到解决纠偏的方法,从而提高电路的成品率. 相似文献
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《Proceedings of the IEEE. Institute of Electrical and Electronics Engineers》1969,57(9):1499-1506
Concentration profiles have been determined for phosphorus diffusion into silicon. These have been fitted to the solution of Fick's diffusion equations using a model where a moving boundary separates two distinct phases. Thus, it is concluded that the silicon surface region is part of a different phase from the rest of the diffused layer. For the short diffusion times studied, the phase boundary reaction is the rate limiting process and the phase boundary moves at a nearly constant rate. In the region beyond the phase boundary the transport of phosphorus is controlled by two diffusion species, characterized by two substantially different diffusion coefficients. The slow diffusant is present mainly in a transition region between the phase boundary and the fast diffusant dominated region. The fast diffusant has a maximum concentration at the phase boundary. The linear rates of movement of the phase boundary, the concentrations of the fast diffusant at the phase boundary, and the diffusion constants for the slow and the fast diffusants were obtained over the temperature range from 820 to 1100°C. As the diffusion temperature increases the diffusion constants for the slow and the fast diffusants approach each other. At 1100°C, the diffusion profile can be represented by a single diffusion constant. For long diffusion times the phase boundary became less distinct. 相似文献
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Krupka J. Breeze J. Centeno A. Alford N. Claussen T. Jensen L. 《Microwave Theory and Techniques》2006,54(11):3995-4001
The complex permittivity and resistivity of float-zone high-resistivity silicon were measured at microwave frequencies for temperatures from 10 up to 400 K employing dielectric-resonator and composite dielectric-resonator techniques. At temperatures below 25 K, where all free carriers are frozen out, loss-tangent values of the order of 2times10-4 were measured, suggesting the existence of hopping conductivity or surface charge carrier conductivity in this temperature range. Use of a composite dielectric-resonator technique enabled the measurement of materials having higher dielectric losses (or lower resistivities) with respect to the dielectric-resonator technique. The real part of permittivity of silicon proved to be frequency independent. Dielectric losses of high-resistivity silicon at microwave frequencies are mainly associated with conductivity and their behavior versus temperature can be satisfactory described by dc conductivity models, except at very low temperatures 相似文献
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G. R. Antell 《Solid-state electronics》1965,8(12):943-944
The rate of diffusion of silicon from a sputtered film of silicon into gallium arsenide has been studied as a function of the ambient arsenic pressure at 900 and 1000°C. The diffusion appears to be non-Fickian. The saturated surface concentration of silicon in diffused layers is about 0·3 wt per cent and the average electron concentration of the layers is about 5 × 1018 cm−3. Silicon has been used as an emitter diffusant in a double diffused GaAs transistor. 相似文献
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Selenium-doped silicon single crystals are studied for the case of an impurity introduced by diffusion from the gas phase. Doping is performed in sealed quartz ampules at a temperature of 1240°C over the course of 240 h. The dependence of the concentration of the introduced deep donor centers of various types on the diffusant vapor pressure p Se is examined. It is found that samples with a concentration of atomic Se centers exceeding 1015 cm?3 can be obtained at comparatively low p Se (0.02–0.06 atm). In this case, the content of diatomic Se2 complexes is lower by an order of magnitude and more. The results obtained may be of interest for those who study nonlinear optical phenomena involving deep donor centers in silicon. 相似文献
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A variational method is used to calculate dispersion curves for channel waveguides fabricated by masked diffusion. Composition profiles for the waveguides are obtained by numerical solution of the diffusion equation, assuming that the diffusant concentration in the unmasked region of the substrate surface is constant during the diffusion process. A linear dependence of refractive index change on diffusant concentration is assumed. The dependence of the number of guided modes on mask gap width and diffusion depth is determined as an aid to the design of modulators and switches for integrated optics. 相似文献
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This paper systematically discusses the influence of temperature and humidity on the adhesion performance of underfill material (epoxy cured with acid anhydride), which was evaluated by die shear test after exposure to various conditions. The inherent adhesion strength between the underfill and passivation is not affected significantly by thermal cycling between -55/spl deg/C and 125/spl deg/C for 1000 cycles. The adhesion strength of underfill material decreases with the increase of test temperature in the investigated range, due to the decrease of modulus of the underfill with the increase of temperature. A sharp decrease in adhesion strength occurs as temperature increases toward the glass transition temperature of the underfill material. Adhesion strength of underfill with different passivation materials decreases after aging in a high temperature and high humidity environment. The extent of the decrease depends on underfill formulation and the hydrophilicity of the passivation material. Hydrophilic passivation such silicon oxide (SiO/sub 2/) and silicon nitride (Si/sub 3/N/sub 4/) shows much more severe adhesion degradation than hydrophobic passivation such as benzocyclobutene (BCB) and polyimide (PI). Adhesion degradation is slower than moisture diffusion. The adhesion stability for hydrophilic passivation can be successfully improved by use of a coupling agent such as silane that introduces stable chemical bonds at interface. 相似文献
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We report the diffusion of zinc into low temperature (LT) GaAs grown by MBE at 200° C, the problems associated with using a silicon nitride film directly deposited on the LT GaAs as a Zn diffusion mask, and several schemes to avoid the problems. The Zn diffusion coefficient is measured (sealed-ampoule technique) to be about one order of magnitude higher in the LT GaAs than in normal GaAs, attributed to a large quantity of defects including arsenic antisites (AsGa) in the LT GaAs. The effectiveness of silicon nitride as a Zn diffusion mask depends if the mask is deposited directly on the LT GaAs. The failure of the nitride directly deposited on the LT GaAs to stop the Zn is attributed to arsenic atoms outdiffusing from the As-rich LT GaAs (about 1 at. % excess As) into the nitride. Several structures are introduced including a 100-Å thick GaAs layer on the LT GaAs that are effective in preserving the diffusion mask properties of the silicon nitride. 相似文献