基于高光谱的苹果树冠层磷素状况估测模型研究

利用高光谱技术估测了苹果树冠层的磷素含量。先用ASD Field Spec3型地物光谱仪测定了春梢停止生长期苹果树冠层的高光谱反射率,并对光谱数据进行了多种变换处理。然后对其与磷素含量进行了相关分析,找出了与磷素相关性较显著的光谱参量,并通过逐步回归分析建立了磷素估测模型。结果表明,近红外波段是苹果树冠层磷素的敏感波段;808 nm、921 nm、1195 nm、1272 nm及其组合的归一化红外光谱指数与苹果树冠层磷素高度相关。在构建的估测模型中,以808 nm、921 nm、1195nm、1272 nm及其组合的归一化红外光谱指数为自变量构建的高光谱估测模型的估测效果最佳。该研究实现了苹果树冠层磷素含量的快速估测,同时也为苹果的实时营养诊断提供了理论依据。     

基于光谱变换定量估算苹果叶片的等效水厚度

运用高光谱技术快速无损地估算了苹果叶片的等效水厚度(Equivalent Water Thickness, EWT),为苹果树的长势及干旱预警提供参考。以山东省烟台栖霞市红富士苹果树叶片为试验材料,在测定苹果叶片的光谱反射率和计算叶片EWT的基础上,分析了苹果叶片的EWT、原始光谱的反射率及其13种变换光谱反射率之间的相关性。筛选敏感波长后,建立了苹果叶片EWT的支持向量机定量的估算模型。13种光谱变换中,一阶导数(the First Derivative, FDR)、平方根的一阶导数(the First Derivative of the Square Root, FD(SqrtR))及倒数的对数的一阶导数(the First Derivative of the Logarithm of the Reciprocal, FD[Lg(1/R)])三种变换的相关性较好。确定了估测苹果叶片EWT的敏感波长。基于支持向量机回归分析方法,建立了定量估算叶片EWT的模型,验证集的决定系数R2达到了0.8147,相对分析误差(Relative Percent Deviation, RPD)达到了2.2671。结果表明,该模型具有较高的估测能力,支持向量机回归方法比较适于估算苹果叶片的EWT。该方法为利用高光谱技术定量估算苹果的生长状况提供了技术支撑。     

基于傅里叶变换红外光谱和siPLS-GA-PLS的水稻叶片氮素含量预测研究

傅里叶变换中红外光谱谱区宽,搜索空间大,需要采用高效率和高质量的算法进行波长选择.敏感波段及其组合的选择是简化分析模型和提高模型预测精度的关键技术之一.本研究以水稻孕穗期叶片干样的中红外光谱透射率和叶片氮素含量为数据源,通过协同偏最小二乘算法(siPLS)从宽谱区中初选出波段范围1583.3~992.2cm-1,再采用迭代遗传算法(GA)从中选出了84个水稻叶片氮素含量预测的敏感波段.研究结果显示以此敏感波段建立的偏最小二乘回归模型的预测均方根误差(RMSEP)和水稻叶片总氮含量的测量值与预测值之间的相关系数分别为0.1186和0.9120,该预测结果明显优于协同偏最小二乘法(siPLS)和光谱指数NFSA的预测结果,说明傅里叶变换红外光谱技术结合siPLS-GA-PLS算法能够实现水稻叶片氮素含量的预测.     

基于红边位置的木荷叶片叶绿素含量估测模型研究

利用红边参数反演作物参数是定量遥感研究的一个热点, 红边参数中红边位置与作物生化组分强相关, 为监测作物胁迫提供了一个非常敏感的指标。准确估测植被叶绿素含量,对于研究森林健康和胁迫、森林生产力的估计, 碳循环的研究有着重要的意义。介绍几种红边位置算法, 并对这些算法及其应用进行了比较,通过选取红边位置的不同敏感波段来估测植被叶片叶绿素含量。经室内光谱获取叶片的光谱数据,采用一阶光谱导数法、平滑处理后一阶光谱导数法、线性四点内插法、五次多项式拟合法四种算法处理光谱数据,获得红边位置变量,并与叶绿素含量进行拟合,构建估测木荷叶片叶绿素含量的回归模型。结果表明:各种算法获取的红边位置变量所构建的回归模型估测叶绿素含量是可行的;五次多项式拟合法估算精度是最高的,其获取红边位置计算相对复杂;线性四点内插法估算精度次之,但计算较简便。     

基于吸光度的波长筛选方法用于近红外光谱定量模型的优化

建立一种基于吸光度的波长筛选方法,以近红外光谱测定中成药制剂的多糖含量为例,对模型优化效果进行验证.考虑模型稳定性,在计算机平台上搭建一种新的样本集划分框架,基于吸光度筛选出最优波段为400~1882&2072~2364 nm,建立偏最小二乘(PLS)模型得到的SEPAve、RP,Ave分别为27.13 mg L-1、0.856,与全扫描谱区(400~2498 nm)的PLS模型预测效果做比较.结果表明,基于吸光度的波长筛选方法,可以优选出高信噪比波长,从而提高了近红外光谱定量模型的性能.     

基于场景的热红外高光谱数据光谱定标

传感器每个波段的中心波长和半高全宽（Full Width at Half Maximum，FWHM）随成像环境变化会发生较大的系统性漂移。这种漂移最终会影响发射率和温度的反演精度，尤其是在大气吸收波段附近的发射率反演精度。选择水汽在11.73 m处的吸收通道作为参考波段，提出了适用于热红外高光谱数据的光谱定标技术流程。模拟实验表明:光谱分辨率为50 nm，中心波长偏移在-50~50 nm、FWHM变化在-25~25 nm时，大气水汽含量对光谱定标误差的影响最大。同时，对误差分布曲面进行拟合得到描述误差分布模型，用于误差的估计。当大气水汽含量足够大时，光谱中心波长偏移估算误差可达到1 nm以内。最后，将所提方法应用于机载热红外高光谱数据光谱定标。结果显示，热红外高光谱成像仪中心波长偏移为28.4 nm，FWHM变化为-18.5 nm。     

溶胶-凝胶提拉法制备Mg_xNi_(1-x)O薄膜与表征

利用溶胶凝胶提拉法在石英玻璃衬底上制备出吸收边波长位于地球表面太阳光谱日盲区(240～280nm)内的MgxNi1-xO薄膜.XPS和XRD结果显示,MgxNi1-xO在1000℃下形成具有立方结构的固溶体;紫外可见吸收谱结果表明,MgxNi1-xO吸收边随着Mg含量的变化而发生改变,当Mg含量x在0.2～0.3之间时,薄膜的吸收边波长在248～276nm范围内可调;光电响应测试结果表明,MgxNi1-xO薄膜(x=0.3)对太阳光不敏感,而对波长为254nm的紫外光具有很好的光电导特性,光照前后薄膜电阻变化率达40%,因此,我们可以认为MgxNi1-xO(x=0.2～0.3)薄膜材料有望应用于日盲区的紫外探测.     

溶胶-凝胶提拉法制备Mgx Ni1-xO薄膜与表征

利用溶胶-凝胶提拉法在石英玻璃衬底上制备出吸收边波长位于地球表面太阳光谱日盲区(240～280nm)内的MgxNi1-xO薄膜.XPS和XRD结果显示,MgxNi1-xO在1000℃下形成具有立方结构的固溶体;紫外-可见吸收谱结果表明,MgxN1-xO吸收边随着Mg含量的变化而发生改变,当Mg含量x在0.2～0.3之间时,薄膜的吸收边波长在248～276nm范围内可调;光电响应测试结果表明,MgxNi1-xO薄膜(x=0.3)对太阳光不敏感,而对波长为254nm的紫外光具有很好的光电导特性,光照前后薄膜电阻变化率达40%,因此,我们可以认为MgxNi1-xO(x=0.2～0.3)薄膜材料有望应用于日盲区的紫外探测.     

基于近红外高光谱成像技术的长枣含水量无损检测

利用近红外(NIR)高光谱(900~1 700nm)成像技术对灵武长枣含水量的无损检测进行了研究。通过900~1 700nm高光谱成像系统采集了128个长枣图像,对原始光谱与Savitzky-Golay平滑处理后的光谱反射率R曲线、吸收率A曲线和Kubelka-Munk函数(KM)等曲线的偏最小二乘回归(PLSR)模型进行对比分析;采用PLSR的加权β系数分别提取不同光谱参数下的特征波长,建立RPLSR、A-PLSR和KM-PLSR的长枣含水量预测模型。结果表明,采用原始光谱建立的PLSR模型优于Savitzky-Golay平滑的PLSR模型;原始光谱的特征波长建立的PLSR模型优于全波段的PLSR模型,特征波长建立的KM-PLSR模型优于R-PLSR、A-PLSR模型,决定系数(R2)和预测均方根误差(RMSEP)分别为0.793、1.828。这表明,NIR高光谱成像技术提取特征波长进行长枣水分检测是可行的,同时也为今后长枣品质在线检测提供了理论依据。     

高光谱技术在血迹分类识别中的应用

利用高光谱技术对血迹种类进行无损识别研究。采用小波变换技术对400~950 nm之间的原始光谱进行去噪处理,并对处理后的光谱进行特征波段选择,建立全波段和特征波长下的血迹种类识别模型。结果表明,利用特征波长与支持向量机(SVM)结合建立的血迹种类识别模型的识别准确率及识别时间分别为98%和0.2 s,优于全波段建立的模型。研究表明,采用高光谱技术对血迹种类识别是可行的。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.