扫描镜动态性能的自准直检测技术研究

为检验扫描镜的动态性能,提出了一种动态自准直检测方法,该方法巧妙地将被检扫描镜和动态靶标上目标模拟反射镜纳入动态光电自准直仪准直光束的传播路径中,并构成闭合的光学自准直测量回路。设计了扫描镜动态性能的自准直检测装置,并利用自准直方法对动态靶标的自身精度进行标定。实验结果表明,动态靶标在360°的范围内的动态精度为±15μrad,可检测最大速度为80°/s,最大加速度为50°/s2。将该检测方法和装置应用于某型号空间激光照明成像跟踪系统中扫描镜的方位轴、俯仰轴独立性能的检验,获得了相应的静态轴系晃动、阶跃响应和连续跟踪等性能数据,为扫描镜的性能改进提供了参考和帮助。     

红外跟踪测量系统动态精度偏置检测方法研究

利用动态精度靶标能够确定被检测光电经纬仪回转中心的空间位置。提出了动态精度偏置检测方法,实现对非中心红外跟踪系统动态角测量精度的检测,由于不需要在轴端镜头上加装分光镜组,不改变系统的转动惯量,提升了非中心系统的动态检测精度。对检测数据处理,验证了该方法的有效性,并在某型光电经纬仪检测中得到应用。     

基于TDOA/FDOA相位条纹的高精度GPS信号跟踪方法

针对传统GPS接收机跟踪环路结构复杂,以及在低信噪比(SNR)、高动态条件下跟踪性能较差的问题,该文提出一种基于相位条纹斜率检测的跟踪新方法。通过采用到达时差(TDOA)的频域相位测量伪码时延,到达频差(FDOA)的时域相位测量载波多普勒频偏。该方法降低了环路实现的复杂度,同时提高了跟踪精度。仿真结果验证了该方法的有效性和稳定性,在载噪比为32 dB-Hz时,相比传统方法,基于TDOA/FDOA相位条纹法的码相位测量精度提高了60%,载波多普勒测量精度提高了31%,且在高动态环境中也能实现精确跟踪,对改善GPS接收机跟踪性能具有研究意义。     

基于机械臂路径规划的内场轨迹实现技术研究

为了解决传统光电跟踪设备的跟踪性能测试系统参数调试繁琐、设备安装困难、靶标适用性差等问题,研究了基于机械臂路径规划的内场轨迹实现技术。通过规划六自由度机械臂的末端运动轨迹,设计了更加灵活、高效的跟踪性能测试系统。首先,对传统测试靶标系统进行分析,明确实现跟踪性能测试的数学模型;然后提出基于六自由度机械臂的新型技术方案,并分析了两种方案的差异性;接着通过靶标轨迹的坐标变换,根据传统动态靶标轨迹得到适用于六自由度机械臂的末端位姿参数,从而实现轨迹规划;最后,通过数值仿真验证了本文方法与传统方法的跟踪性能测试效果的一致性。仿真结果表明,两者具有相同的跟踪性能测试效果。相较于传统方法,采用机械臂的测试系统在参数调节、工具安装和靶标适用性上更具优势,完全能够满足光电跟踪设备内场跟踪性能测试的要求。     

一种适用的复合控制算法

给出了一种适用的复合控制方法，对该方法的稳定性进行了分析，通过仿真可以看出，该方法能较好地改善跟踪雷达伺服系统的动态跟踪性能，减少动态滞后误差，提高雷达的测量精度。     

基于圆拟合的激光光斑中心检测算法

激光光斑中心检测是光学测量中常用的关键技术，检测算法的精度和速度直接影响了测量的精度及速度，传统的检测算法如重心法，Hough变换法等在检测精度或速度上存在不足，基于圆拟合的激光光斑中心检测算法是根据最小二乘原理用圆来逼近激光光斑轮廓，该算法除了可以检测光斑中心外，还可以检测光斑半径，达到亚像素级的定位精度，具有很快的计算速度，可适用于实时的光学测量。     

大间距空间角度测量技术进展及分析

角度测量广泛应用于工业生产和国防军事领域,介绍了大间距空间角测量技术研究进展并对典型测量设备进行了分析。提出了一种基于机器视觉的动态角测量方法,利用高精度两轴伺服系统识别跟踪远处场景中的十字分划靶标,利用图像处理算法实时计算跟踪偏移量并传递给两轴伺服系统进行高低、方位角度修正。通过构建被测对象、合作目标和角度测量传感器三者之间的角度坐标系传递模型,实现了武器系统调炮精度检测。另外也可用于光电桅杆偏移量及火炮身管晃动量检测,具有精度高、成本低等特点,适合于外场条件下大间距空间角测量。     

基于DDS的动态多普勒模拟器的设计与应用

在航天测控领域中,测控系统的动态捕获、跟踪性能和测量精度是非常重要的因素,为检测测控雷达的动态捕获、跟踪性能和测量精度,对直接数字频率合成技术进行了分析,提出基于DDS的动态多普勒模拟器的设计方案,产生70MHz为中心的高精度准确度的频率,达到对测控雷达中频单元动态测试的目的,此设计在工程中的应用效果良好。     

室内模拟环境下动态调制传递函数检测方法

针对车载视觉智能感知、低空区域防务等光电成像系统远距离观测动态性能测评需求,研制了室内运动目标模拟系统。基于线性移不变系统模型,分析了“三杆靶”、“四杆靶”靶标MTF测量原理,提出了一种基于变频栅条靶标的动态MTF检测方法,给出了变频靶标设计方案和MTF解算方法。完成了“三杆靶”和变频靶标测量方法的静态和动态MTF对比测试实验。实验结果表明:提出的变频靶标动态MTF检测方法与“三杆靶”测量方法相比,在静态MTF检测时测量数据的相对最大偏差比率为1.9%,动态MTF检测时测量数据相对最大偏差比率为2.8%,是一种高精度数字化动态MTF检测方法。该方法可以从一幅靶标图像中解算出MTF曲线,在动态MTF检测技术领域比“刀口法”、“三杆靶”、“四杆靶”等方法更具优势。     

激光跟踪仪目标脱靶量精密探测方法

激光跟踪仪是一种用于大尺寸空间精密几何坐标测量的重要光学测量仪器。PSD是激光跟踪仪实现对合作目标精密跟踪的脱靶量传感器件,其探测精度直接影响跟踪测量性能。首先,简要介绍了激光跟踪测量系统及基工作原理,然后根据系统需求提出了脱靶量精密探测方案。重点讨论了I/V变换、信号放大、滤波、参数匹配等硬件设计方法以提高PSD输出微弱电流信号的稳定性,研究提出了基于FPGA和有限状态机的去极值平均滤波算法和扩展除法运算算法分别用于降低噪声干扰与提高测量精度;数据表明在4mm4mm的区域内脱靶量探测稳定度优于2m。采用该方法实现激光跟踪仪对合作目标的动态跟踪,很好地满足了激光跟踪仪的精密快速跟踪需要。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.