一种新型非致冷红外探测器

介绍一种基于标准硅工艺、采用电容读出方式微悬臂梁非制冷红外探测器的设计、制作及性能测试。用这两种热膨胀系数相差很大材料（氮化硅和铝）的薄膜做成的双材料微悬臂梁在红外辐射下，温度升高并发生弯曲。通过检测微悬臂梁和衬底形成的一个可变电容变化可以得知微悬臂梁的弯曲情况，从而可以探测红外辐射的信息。利用外部测试设备对单元探测器进行测试表明微悬臂梁对红外辐射有很高的响应。     

基于电容读出的非制冷红外探测器

介绍了一种基于标准硅工艺的电容读出式微悬臂梁非制冷红外探测器的设计、制作以及集成读出电路的设计。该探测器用于探测室温下物体的红外辐射，其响应波长为8～12 μm 。由于氮化硅和铝的热膨胀系数相差很大，用这两种材料的薄膜做成的双材料微悬臂梁在红外辐射下会发生弯曲，微悬臂梁和衬底形成一个可变电容，通过检测电容的变化来反映微悬臂梁的弯曲，从而可以探测红外辐射的情况。采用和探测器集成的CMOS读出电路对探测器信号进行读取，微悬臂梁的电容灵敏度可达2.5 fF/K，温度分辨率为0.1 K。     

用旋涂法制备的热释电聚合物薄膜研究

PVDF聚合物热释电薄膜是一种新的激光与红外辐射探测器材料,它比无机薄膜更易于与硅微加工工艺为基础的硅读出电路兼容.本文用旋涂法制备了一种聚合物热释电薄膜,对其进行了红外光谱和X射线衍射分析,并研究了其热释电响应特性,结果表明与其他方法(流延法和压膜法)相比,旋涂法制备的聚合物薄膜样品对热响应具有更高的灵敏度,更适合用作激光与红外辐射探测器材料.(PH2)     

新型非制冷高速高灵敏度红外探测器的研制

介绍了一种新型非制冷高速高灵敏度硅基电容式红外探测器的工作原理,描述了探测器的设计思想及制作工艺。该探测器采用密封于微气腔的特殊气体吸收红外辐射以改变探测器微电容的原理来进行红外探测,制作工艺采用微机械加工技术。对样品的测试表明这种红外探测器能探测红外信号。     

第三讲 红外焦平面列阵探测器

红外探测器是一种敏感辐射的传感器,它利用自然界某些材料在受到辐射照射之后电学性质发生变化的特性,把辐射信号转换成电信号.通过红外探测器这种功能器件,以电信号形式感知辐射信号,结果形成了敏感或探测红外辐射的一系列仪器.30年来,在军     

光导型测辐射热计红外探测器

本发明提供一种光导型测辐射热计红外探测器。这种红外探测器是用一种电阻会随入射红外辐射的光激发和热激发而变化的探测器材料制作的。对于这种探测器材料来说，由光激发和热激发引起的电阻变化是叠加的。该探测器材料悬置在衬底上面，它与衬底之间的间隙为入射辐射的四分之一波长，     

非制冷色散式成像光谱仪辐射传递模型

根据接收信号信噪比,研究了基于非制冷微测辐射热计阵列构造色散式成像光谱仪的可行性.综合考虑目标红外辐射特性、大气传输透过率、仪器接收孔径、色散式光谱仪辐射传递特性、红外阵列探测器参数、数据链传输等环节,建立了完善的色散式长波红外成像光谱仪辐射能量传递模型.选用典型地物红外发射率数据,非制冷微测辐射热计红外焦平面阵列参数,利用低分辨率大气辐射传输计算软件LOWTRAN生成大气红外透过率曲线,依据传递模型,计算了以非制冷微测辐射热计阵列为探测器的色散式长波红外成像光谱仪可达到的光谱分辨率,验证了依据非制冷红外探测器构建小型红外成像光谱遥感器的潜力.     

双材料微梁阵列非制冷红外成像系统——微梁阵列的设计与制作

给出了一种用于非制冷光学读出红外探测器的核心器件--双材料微悬臂梁阵列的设计和制作.微梁阵列是无硅基底的SiNx/Au双材料单层膜结构,其制作工艺简单、可以直接放在空气中成像.实验使用了设计制作的140×98微梁阵列和高信噪比的12-bit CCD,得到120℃以上的物体热像,噪声等效温度差(NETD)为7K左右,实验结果与热机械模型预测结果一致.     

MEMS技术检测痕量爆炸物微粒的原理与实验方法研究

提出一种基于MEMS技术、利用爆炸物微粒本身特性来检测爆炸物的新型微梁式爆炸物探测器,这种探测器利用不同爆炸物具有不同的熔点及蒸发点,并且在熔解过程中吸收热量的原理,使落在悬臂梁上的痕量爆炸物微粒在蒸发时的热量变化可以通过梁的弯曲变形反映出来,其中复合双金属悬臂梁是利用MEMS工艺制造的;还介绍了探测器的结构设计、悬臂梁弯曲变形的理论计算及技术实现方案探讨等前沿探索性研究工作。     

微测辐射热计的红外热响应模拟

利用有限元法对微桥结构的测辐射热计进行了二维热模拟.定量地分析了探测单元的大小尺寸、支撑层的厚度,支撑臂的长度和宽度、引线材料的选取等对微测辐射热计探测单元在红外辐射下温度的变化和热响应的快慢情况.评估了真空封装对微测辐射热计红外响应的影响.同时作为比较对平板空腔结构的红外探测器也进行了分析.     

Optical readout uncooled infrared imaging detector using knife-edge filter operation

An optical readout uncooled infrared (IR) imaging detector of bimaterial cantilever array using knife-edge filter operation (KEFO) is demonstrated. The angle change of each cantilever in a focal plane array (FPA) can be simultaneously detected with a resolution of 10-5 degree. A deformation magnifying substrate-free micro-cantilever unit with multi-fold interval metallized legs is specially designed and modeled. A FPA with 160×160 pixels is fabricated and thermal images with noise equivalent temperature difference (NETD) of 400 mK are obtained by this imaging detector.     

An Optical Readout Method Based Uncooled Infrared Imaging System

This paper presents an optical readout method based uncooled infrared imaging system that contains an optical read-out section and a bi-material micro-cantilever arrays (BMCA) detector. The optical read-out section is based on incoherent light spatial filter technique. The read-out section converts the deflection angles of BMCA caused by absorption of infrared (IR) radiation to a visible image through optical filtering operation of the BMCA with a knife-edge filter. A spatial mathematical model is presented to describe the read-out method and its validity is proved. The IR image of a person’s hand obtained through the using of the 100?×?100 BMCA and the 12-bit A/D quantizer demonstrates the ability of the system to create image. The performance test shows that the average Noise-equivalent temperature difference (NETD) of the imaging system can arrive at about 183mK with some areas having a NETD as low as 78mK.     

红外探测器辐照机理分析及辐照试验验证

红外探测器处于太空或辐射环境会受到各种辐射粒子作用,其性能会发生衰减。本文主要分析了各种辐射效应对HgCdTe红外探测器性能影响机理。针对红外探测器复合钝化加固方法,ROIC环源环栅加固方法进行试验验证。辐照试验显示,加固后的红外探测器互联抗辐照读出电路,其抗总剂量、抗剂量率及抗中子辐射位移达到了比较好抗辐照效果。     

Thermopile Infrared Detector with Detectivity Greater Than 10<Superscript>8</Superscript> cmHz<Superscript>(1/2)</Superscript>/W

In this paper, the design, fabrication and experimental results of the thermopile infrared detector, with a single layer of low-stress SiN_x membrane, instead of thin sandwich layer membrane of SiO₂–Si₃N₄ are presented. Thermal isolation is achieved by using back etching of bulk silicon. Thermopiles are consisted of serially interconnected p-poly-Si/Al thermocouples supported by the single layer of SiN_x membrane with low stress. Au/Ti reflective coating was evaporated on the surface of cold junctions of the thermopile to block incident radiation. In the measurement, we find that infrared absorbance of SiN_x membrane to different wavelength is diverse and less than 100%, which has great influence on calculating the actual absorbing power of the detector, so the infrared (IR) transmission spectrum is measured to calibrate the actual infrared absorbing amount of the detector. The analysis result shows that only 43.72% infrared radiation is absorbed by the detector. Based on the measurement of IR transmission spectrum and output voltage of the detector, the response sensitivity of the detector is calculated as 31.65 V/W, detectivity of the detector is 1.16 × 10⁸ cmHz^(1/2)W⁻¹, and response time of the detector is 126 ms.     

硅微悬臂梁谐振器的电激电拾方法研究

采用电热激励、压电拾取方法对硅微机械悬臂梁的谐振性能进行了实验研究。成功实现了对硅微悬臂梁谐振器前三阶振型的实验测试。电热激励利用在硅微机械悬臂梁表面优化设计的热激励电阻加以实现。为拾取硅微悬臂梁的微弱谐振信号,在硅微悬臂梁表面优化设计并制作了压敏电阻全桥,利用压敏电阻的压电效应实现对谐振微弱信号的拾取。     

Molecular beam epitaxy grown long wavelength infrared HgCdTe on Si detector performance

The use of silicon as a substrate alternative to bulk CdZnTe for epitaxial growth of HgCdTe for infrared (IR) detector applications is attractive because of potential cost savings as a result of the large available sizes and the relatively low cost of silicon substrates. However, the potential benefits of silicon as a substrate have been difficult to realize because of the technical challenges of growing low defect density HgCdTe on silicon where the lattice mismatch is ∼19%. This is especially true for LWIR HgCdTe detectors where the performance can be limited by the high (∼5×10⁶ cm⁻²) dislocation density typically found in HgCdTe grown on silicon. We have fabricated a series of long wavelength infrared (LWIR) HgCdTe diodes and several LWIR focal plane arrays (FPAs) with HgCdTe grown on silicon substrates using MBE grown CdTe and CdSeTe buffer layers. The detector arrays were fabricated using Rockwell Scientific’s planar diode architecture. The diode and FPA and results at 78 K will be discussed in terms of the high dislocation density (∼5×10⁶ cm²) typically measured when HgCdTe is grown on silicon substrates.     

A monolithically integrated HgCdTe short-wavelength infrared photodetector and micro-electro-mechanical systems-based optical filter

A monolithically integrated low-temperature micro-electro-mechanical systems (MEMS) and HgCdTe infrared (IR) detector technology is introduced, implemented, and characterized. The ultimate aim of this project is to develop a MEMS-based optical filter, integrated with an IR detector, that selects narrow wavelength bands within the short-wavelength IR (SWIR) region of the spectrum. The entire fabrication process is compatible with two-dimensional IR focal plane array technology, and needs to be compatible with a proposed electrically tunable MEMS filter based on a Fabry-Perot optical cavity. The fabricated device consists of an HgCdTe SWIR photoconductor, distributed Bragg mirrors formed of Ge-SiO-Ge, a sacrificial spacer layer within the cavity, and a silicon nitride membrane for structural support. Mirror stacks fabricated on silicon, identical to the structures that will form the optical cavity, have been characterized to determine the optimum filter characteristics. The measured full-width at half-maximum (FWHM) was 34 nm at the center wavelength of 1,780 nm with an extinction ratio of 36.6. Fully integrated filters on HgCdTe photoconductors with a center wavelength of approximately 1,950 nm give a FWHM of approximately 100 nm, and a peak responsivity of approximately 8×10⁴ V/W. The experimental results are in good agreement with the optical model, which takes into account mirror reflectivity, absorption within the cavity by the spacer material, and absorption by the silicon nitride support structure.