8×8重排无阻塞型SOI热光波导开关阵列

设计并制作了一种重排无阻塞型的8×8 SOI热光波导开关阵列。开关单元采用了MMI-MZI结构的2×2光开关。整个器件的开关时间约为2μs。器件中开关单元功耗小于240mW。消光比在17~22dB范围内变化。功耗和开关速度都明显优于SiO2基和聚合物基的开关阵列。     

1×2全内反射型有机聚合物热光开关的研制

给出了完整的全内反射型有机聚合物热光开关的设计方案,并研制成功了1×2光开关.所研制的X结结构全内反射光开关,在交叉态,具有约25dB的消光比;在全反射状态下,消光比达22dB,相应的驱动功率约为158mW(驱动电压3.2V,相应的驱动电流49.4mA).     

1×2全内反射型有机聚合物热光开关的研制

给出了完整的全内反射型有机聚合物热光开关的设计方案,并研制成功了1×2光开关.所研制的X结结构全内反射光开关,在交叉态,具有约25dB的消光比;在全反射状态下,消光比达22dB,相应的驱动功率约为158mW(驱动电压3.2V,相应的驱动电流49.4mA).     

自锁型2×2和1×4光开关

自锁型2×2和1×4光开关是在{100}硅基片上采用各向异性湿刻蚀工艺技术在KOH中制备的微机械光开关。这种制备方法可以低成本一次投料就能获得大量适合光纤对准、具有很高精度的微机械。本光开关包括两个硅热驱动器:一个驱动并联U形悬臂梁产生光纤侧向移动,另一个驱动夹持光纤用的H形扣子平台;通过薄的有弹性的硅臂把U形悬臂梁与刚性的能抗光纤角位移的平台连接起来。所制备的光开关具有产率高、机械稳定性好和优良的光学性能。采用标准单模光纤的光开关其串话小于-60dB。1×4和2×2光开关插入损耗分别为小于1 dB和近1 dB。在开关期间(<300 ms),2×2、1×4光开关所需驱动功率分别为<0.6 W和1.0 W。1×2光开关已做了寿命试验,无误工作循环大于106次,并且在室温下经一年多的工作,没有看到光学性能和开关行为的退化。     

A 1×4 Polymeric Digital Optical Switch Basedon the Thermo-Optic Effect

提出了基于热光型聚合物的集成有S弯曲光衰减器的1×4 Y分叉数字光开关. 利用开关与光纤阵列耦合用的S弯曲，将其设计成可变光衰减器，这使得器件更紧凑，并获得低串扰和大分叉角. 在小于200mW的驱动功耗下，器件串扰可低至-35dB.     

基于Banyan网络的无阻塞SiO2波导4×4矩阵光开关

提出了一种基于Mach-Zehnder干涉仪（MZI）结构开关单元和Banyan网络的严格无阻塞4×4矩阵光开关。相对于Crossbar结构的7级单元级联，Banyan结构只需3级连接。分析了Banyan网络中交叉连接损耗与交叉角度的关系，交叉角30°时损耗为0．09dB。优化设计了MZI开关单元结构，并制作了2×2光开关，测得插入损耗（IL）为-14dB、串扰（XT）为-38dB和功耗为450mW。设计了基于Banyan网络的4×4光开关，连接波导交叉角为30°。基于光波导平面光波线路（PLC）技术，制作了严格无阻塞的SiO2波导4×4矩阵光开关，测得平均儿为3．95dB、通道XT为-37dB、偏振相关损耗（PDL）为0．4dB、单通道开关功率约为670mW及开关响应时间小于1ms。     

SOI光波导和集成波导光开关矩阵

报道了基于SOI (silicon-on-insulator）材料的光波导和集成波导光开关矩阵的最新研究进展. 给出了截面为梯形的脊波导的单模条件，设计制备了MMI (multimode interference）集成耦合器和基于Mach-Zehnder光波导干涉仪的热光型2×2光开关，开关转换速度达到了5～8μs，驱动功耗仅为140mW，是当前国际上同类型光开关中转换速度最快的. 在此基础上制备成功了4×4波导光开关矩阵，并实现了光信号在不同信道间的转换.     

聚合物/SiO2混合波导2×2热光开关的制备与测试

利用聚合物材料SU-8作为芯层、聚合物材料PMMA作为上包层、无机材料SiO2作为下包层,设计并制备了一种有机/无机混合波导2×2定向耦合-马赫曾德尔(DC-MZI)热光开关。为了保证波导中的单模传输、减小模式辐射和衬底泄露损耗、缩短响应时间并降低器件功耗,对其结构参数做了优化。利用涂膜、湿法刻蚀等工艺制备了器件样品。在1 550nm波长下,器件的交叉态和直通态的驱动功率分别为0和7.8mW(开关功率为7.8mW),交叉态和直通态的两端口串扰分别为-9dB和-12.8dB。在方波驱动电压信号作用下,测得器件交叉端口的上升时间和下降时间分别为138μs和136μs,直通端口的上升时间和下降时间分别为63μs和140μs。制备的混合结构器件综合利用了芯层聚合物材料热光系数大、上/下缓冲层厚度均较小以及Si/SiO2导热系数大的优点,因此同时具备了较低的功耗和较快的响应时间,在低功耗、快速光通信系统中具有较好的应用前景。     

与偏振无关的双向2×2光纤光开关

本文提出了新颖的与偏振无关全光 2× 2光纤光开关结构 ,采用自由空间光互连模块 ,能够实现 2× 2与偏振无关的双向光纤光开关直通和交换功能。以此为基础 ,提出了新的全光 4× 4光纤光开关的光学实现方法。该光开关具有光学元件少、结构紧凑、易于光学装配等特点     

基于MOEMS的无阻塞阵列光开关

上海光机所信息光学实验室和上海交大微纳米技术研究院的研究人员最近研制成功了一种基于微光电子机械系统(MOEMS)的无阻塞16×16阵列光开关。基于MOEMS的无阻塞16×16阵列光开关是根据“多路对多路塞机械光开关”等多项专利技术,利用MEMS技术制备的微电磁执行器,采取优化的Benes网络结构,以2×2和4×4光开关为基本单元,构成的16×16阵列光开关具有运动部件少、可靠性高和稳定性强等特点。在研制该开关的过程中,科研人员特别重视对16×16阵列光开关中2×2和4×4光开关器件的可靠性和稳定性工艺技术的深入研究,实现了2×2和4×4MEMES…     

具有光纤自定位保持结构的2×2扭转微镜光开关阵列的制作和机电特性

应用基于表面硅、体硅微电子工艺的混合微加工技术,制作了新型2×2扭转微镜光开关阵列,并研究了其在外加静电场和交变电场中的机电特性.当该光开关中悬挂多晶硅微镜的弹性扭转梁的厚度约为1μm时,驱动微镜以实现其"开"状态的拐点静电电压为270～290V,而维持微镜"开"状态的最低保持电压在55V左右.理论分析表明,在关于该光开关结构的一系列设计参数中,拐点静电电压对于弹性扭转梁的厚度最敏感.该光开关的开关寿命超过108次,而其开关时间预计小于2ms.对单片集成制造在该光开关阵列芯片上的两种新型光纤自定位保持结构的力学分析表明,它们具有光纤自固定、自对准的性质.     

具有光纤自定位保持结构的2×2扭转微镜光开关阵列的制作和机电特性

应用基于表面硅、体硅微电子工艺的混合微加工技术,制作了新型2×2扭转微镜光开关阵列,并研究了其在外加静电场和交变电场中的机电特性.当该光开关中悬挂多晶硅微镜的弹性扭转梁的厚度约为1μm时,驱动微镜以实现其"开"状态的拐点静电电压为270～290V,而维持微镜"开"状态的最低保持电压在55V左右.理论分析表明,在关于该光开关结构的一系列设计参数中,拐点静电电压对于弹性扭转梁的厚度最敏感.该光开关的开关寿命超过108次,而其开关时间预计小于2ms.对单片集成制造在该光开关阵列芯片上的两种新型光纤自定位保持结构的力学分析表明,它们具有光纤自固定、自对准的性质.     

基于热光效应的1×4聚合物数字光开关

提出了基于热光型聚合物的集成有S弯曲光衰减器的1×4 Y分叉数字光开关.利用开关与光纤阵列耦合用的S弯曲,将其设计成可变光衰减器,这使得器件更紧凑,并获得低串扰和大分叉角.在小于200mW的驱动功耗下,器件串扰可低至-35dB.     

Very low power nonlinear directional coupling in a p-i (MQW)-nvertical coupler using an electrooptic feedback

An optically controlled 1×2 optical switch based on a vertically arranged directional coupler in which the guiding regions are GaAs/GaAlAs multiple quantum wells is discussed. The device can be switched electrically in a very efficient way (5-V driving voltage for a 330-μm-long sample) as well as optically. When connected to a constant-current source, the system shows high optical nonlinearities and can be all-optically switched with very low incident optical power on the order of 0.1 mW     

ZnS/ZnSe迭层式波导光栅的光调制特性

报道了在ZnS/ZnSe非线性迭层式波导光栅中实现的光控反射特性和光学限制效应,在控制光强为2.60×105W/cm2的Ar 激光作用下,得到对应于二阶Bragg衍射的衍射光偏转角为-2°,相应的折射率变化为-0.049,并得到该材料的非线性折射率系数为-1.9×10-7cm2/W,同时得到其光学限制阈值约为140mW(1.42×105W/cm2),限幅阈值为24mW。     

Monolithically integrated optical gate 2 × 2 matrix switch using GaAs/AlGaAs multiple quantum well structure

A 2 × 2 optical matrix switch, monolithically integrating multiple-quantum-well-gate and optical circuits fabricated by the reactive-ion-beam etching method, is described. The switch size is small, 3 mm × 1.2 mm. Low crosstalk of 20 dB at 12 V is achieved.     

Low crosstalk 1/spl times/2 thermooptic digital optical switch with integrated S-bend attenuator

We propose and demonstrate a 1/spl times/2 thermooptic digital optical switch with variable optical attenuators that are integrated with the S-bend waveguides connecting the output of the Y-switch with a standard fiber array. With a total heating power of 140 mW applied to the switch, we have achieved less than -42-dB optical crosstalk. The wavelength response of the switch is flat across the entire C-band. The average polarization-dependent loss of the switch is about 0.49 dB.     

Fully packaged polymeric four arrayed 2×2 digital opticalswitch

A fully packaged polymeric four arrayed 2×2 digital optical switch is fabricated. Crosslinkable fluorinated polymers with a large thermooptic coefficient and a low loss are used for a low electrical power consumption and a low insertion loss. We improve the uniformity, crosstalk, and insertion loss with introducing a rib waveguide, a channel waveguide, and a tapered waveguide in the polymeric four arrayed 2×2 digital optical switch. The deviation of crosstalks is ±2 dB at 250 mW. The crosstalks are less than -30 dB for all four 2×2 digital optical switch elements with each total electrical power of 250 mW. The fall and rise times are less than 5 ms. The polarization-dependent losses are in the range of 0.2-0.7 dB. The total insertion losses range from 3.5 to 4.0 dB     

Hybrid Integrated Cascaded 2-bit Electrooptic Digital Optical Switches (DOSs)

Hybrid integrated cascaded 1 times 4 electrooptic (EO) polymeric digital optical switches (DOSs) are proposed and demonstrated. The hybrid integration of passive polymer on the same chip with EO polymer can lower the overall device loss without affecting the EO effects. The cascaded DOS can be controlled by only two voltage signal sources without bias stabling mechanism. The device can be operated as a 2-bit reconfigurable switch. The switching voltage is around 15 V for single arm driving with reasonable extinction ratio (9~12 dB) and the loss is improved by ~2.5 dB. This device is ideal for implementing variable optical delay network     

Design of a 16 gray scales 320×240 pixels OLED-on-silicon driving circuit

A 320×240 pixel organic-light-emitting-diode-on-silicon (OLEDoS) driving circuit is implemented using the standard 0.5 μm CMOS process of CSMC. It gives 16 gray scales with integrated 4 bit D/A converters. A three-transistor voltage-programmed OLED pixel driver is proposed, which can realize the very small current driving required for the OLEDoS microdisplay. Both the D/A converter and the pixel driver are implemented with pMOS devices. The pass-transistor and capacitance in the OLED pixel driver can be used to sample the output of the D/A converter. An additional pMOS is added to OLED pixel driver, which is used to control the D/A converter operating only when one row is on. This can reduce the circuit's power consumption. This driving circuit can work properly in a frame frequency of 50 Hz, and the final layout of this circuit is given. The pixel area is 28.4×28.4 μm2 and the display area is 10.7×8.0 mm2 (the diagonal is about 13 mm). The measured pixel gray scale voltage shows that the function of the driver circuit is correct, and the power consumption of the chip is about 350 mW.