平面波展开结合矩量法分析频率选择表面

为了快速分析频率选择表面（FSS）,利用天线阵列理论,引入FSS单元之间互导纳的概念,得到互导纳方程。当FSS阵列无限大时,可以应用Floquet定理简化该方程,同时对方程中某些收敛较慢的项进行平面渡展开,利用矩量法求解。采用该思路我们计算了几种多层FSS及多频FSS,并和实测结果进行对比,得到了较满意的结果。不仅如此,该方法相对其他的单一数值方法具有速度快、收敛好的特点。     

一种基于组合矩和小波变换的目标匹配算法

不变矩方法是一种经典的特征提取方法.文中针对纹理细节信息较少的特定目标,首先在七个不变矩的基础上构建了组合矩.该组合矩具有旋转、平移、比例不变性和良好的类间可分离性,大大降低了算法的复杂性、提高了抗干扰能力.为了进一步提高匹配速度,引入多分辨率小波分解,利用低频系数来计算图像的组合矩特征量进行模板匹配.实验表明,对于细节信息较少的目标,该方法是一种具有较高实时性和鲁棒性的目标匹配算法.     

基于RFID天线阻抗自动匹配技术的研究

构建了一个能为RFID天线阻抗的动态变化提供匹配的自动阻抗匹配虚拟系统。该系统的主要特点是成本低,匹配迅速,可靠性高。测试电路测得天线的反射系数,反馈到微处理器,经处理后自动控制匹配电路的电容开关实现阻抗的匹配。实验结果表明,在误差允许范围内,该系统自动将反射系数稳定在0点的周围,实现了RFID读写器功率的最佳传输。     

矩形波导中电容棒的矩量法分析

本文对矩形波导内金属电容棒和电容膜片进行了矩量法分析。在分析中,未对电容棒和电容膜片的数量、截面形状及相对位置排列做任何限制,因而这一理论方法及相应的计算机软件可以用来分析广泛类型的电容性波导元件。本文计算了若干电容性波导元件实例,其计算结果与实测结果以及相关文献提供的结果吻合良好。     

渐近波形估计技术在涂敷导体柱宽角度RCS快速计算中的应用

采用渐近波形估计技术 (AWE)和矩量法相结合的方法 ,计算了TM波入射下表面涂敷有耗介质的导体柱的宽角度单站RCS ,本方法首先采用矩量法求解由电磁场等效原理得到的介质层表面等效电磁流耦合方程 ,得到柱体在某一给定方向入射波照射下的电流和磁流密度 ,然后采用渐近波形估计技术将任意角度入射波照射下的电流和磁流密度在给定的角度附近按Taylor级数展开 ,通过Pad埁逼近将Ｔａｙｌｏｒ级数转化为有理函数 ,由此可以得到涂敷导体柱在任意角度TM波入射下的电流和磁流密度 ,进而可以得到柱体的宽角度RCS。此方法得到的结果与由MOM计算的结果完全吻合 ,而AWE的计算效率却提高了一个数量级。     

渐近波形估计技术用于介质柱宽角度RCS的计算

基于渐近波开估计（AWE）技术和矩量法（MOM）快速预测任意形状非均匀介质柱体的单站雷达散射截面RCS方向图,采用矩量法求解介质柱的电场积分方程,得到介质柱在某一给定方向入射波照射下的极化电流,然后利用AWE技术将任一角度入射波照射下的极化给定角度附近展开成Taylor级数,通过Pade逼近将Taylor级数转化为有理函数,由此可获得介质柱在任一角度入射波照射下的极化电流,进而计算出RCS方向图。计算结果表明AWE完全能逼近MOM精确计算的曲线,同时可加快计算速度。     

一种新的闭式空域格林函数及其在三维互连结构电容参数提取中的应用

该文提出了一种提取分层介质中三维静态闭式空域格林函数的通用算法,并成功地运用于三维多层多导体互连结构的电容参数提取。该算法在谱域等效传输线模型的基础上,应用Krylov子空间维数缩减技术求出谱域格林函数的有理逼近表达式,再由留数定理得到闭式空域格林函数。所得闭式空域格林函数结合矩量法可以方便地用于提取三维互连结构的电容参数。数值结果验证了方法的准确性和有效性。     

高阶MoM及其与PO的混合法计算电磁散射问题

本文提出了一种新的以高阶矩量法(MoM)与物理光学法相结合的混合法(MoM-PO).该方法采用曲面参数化的离散方法,保证了建模的精确性.计算过程中将散射表面灵活划分为MoM区和PO区,在各自区域可以灵活确定离散单元的大小和密度.MoM区域的高阶矩量法,采用基于Lagrange插值的高阶矢量基函数,结合点匹配技术,比传统的高阶法简单,易于实现.计算结果表明,本文的高阶矩量法及其与物理光学法结合的混合方法能准确有效的计算目标的电磁散射特性.     

解决电大尺寸电磁场问题的改进矩量法研究

首先介绍基于积分方程的矩量法原理及其特点.基于传统矩量法在解决电大尺寸电磁场问题上的局限性,分析几种典型的改进矩量法,包括快速多极子方法、小波矩量法、混合算法和自适应积分法.几种方法通过不同的途径减小了计算量,所以将几种方法结合起来使用,可以有效地解决电大尺寸电磁场问题.运用改进的矩量法,突破了传统矩量法解决电大尺寸电磁场问题的局限性.     

基于等积环投影与Zernike矩的快速模板匹配

为增强工业级机器视觉系统的实时性和稳定性,本文提出一种基于等积环投影与Zernike矩的具有旋转不变性的快速模板匹配方法,该方法采用由粗到精匹配策略,在粗匹配阶段以等积环投影向量作为特征进行匹配得到候选点集,再基于Zenrike矩进行精确匹配.主要创新点为提出复杂度低、抗噪性强和具有旋转不变性的等积环投影向量特征,并利用圆对称性在八分圆法基础上进一步降低Zernike矩计算量.经理论分析和实验对比验证,此法在保障匹配精度前提下,其匹配速度胜于当前同类最优算法,且对高斯噪声及线性亮度变化有强鲁棒性.     

Capacitance-voltage characterization of fully silicided gated MOS capacitor

This paper investigates the capacitance-voltage (C-V) measurement on fully silicided (FUSI) gated metal-oxide-semiconductor (MOS) capacitors and the applicability of MOS capacitor models. When the oxide leak-age current of an MOS capacitor is large, two-element parallel or series model cannot be used to obtain its real C-V characteristic, A three-element model simultaneously consisting of parallel conductance and series resistance or a four-element model with further consideration of a series inductance should be used. We employed the three-element and the four-element models with the help of two-frequency technique to measure the Ni FUSI gated MOS capacitors. The results indicate that the capacitance of the MOS capacitors extracted by the three-element model still shows some frequency dispersion, while that extracted by the four-element model is close to the real capacitance, showing little frequency dispersion. The obtained capacitance can be used to calculate the dielectric thickness with quantum effect correction by NCSU C-V program. We also investigated the influence of MOS capacitor's area on the measurement accuracy. The results indicate that the decrease of capacitor area can reduce the dissipation fac-tor and improve the measurement accuracy. As a result, the frequency dispersion of the measured capacitance is significantly reduced, and real C-V characteristic can be obtained directly by the series model. In addition, this pa-per investigates the quasi-static C-V measurement and the photonic high-frequency C-V measurement on Ni FUSI metal gated MOS capacitor with a thin leaky oxide. The results indicate that the large tunneling current through the gate oxide significantly perturbs the accurate measurement of the displacement current, which is essential for the quasi-static C-V measurement. On the other hand, the photonic high-frequency C-V measurement can bypass the leakage problem, and get reliable low-frequency C-V characteristic, which can be used to evaluate whether the full silicidation has completed or not, and to extract the interface trap density of the SiO2/Si interface.     

压电材料电荷能量回收技术研究

对压电材料电荷能量回收性能进行研究。通过在压电驱动器收缩时间回收其在伸展时储存于其电场和应变场中的能量，来提高对驱动压电驱动器动作的激励电源使用效率。借助瞬时电容器（flying capacitor）所构成的一套封闭系统来实现电荷能量回收与利用，通过瞬时电容器与另一电容器串并联连接方式的不断切换，来有效收集封闭系统中压电驱动器上电荷，提高对电源利用率；同时，通过对电容串并联切换时间控制，实现压电驱动器所要求的振动频率。文章最后给出了实验结果。     

An improved two-frequency method of capacitance measurement forSrTiO3 as high-k gate dielectric

An improved two-frequency method of capacitance measurement for the high-k gate dielectrics is proposed. The equivalent circuit model of the MOS capacitor including the four parameters of intrinsic capacitance, loss tangent, parasitic series inductance, and series resistance is developed. These parameters can be extracted by independently measuring the capacitor at two different frequencies. This technique is demonstrated for high-k SrTiO₃ gate dielectrics and the results show that the calibrated capacitances are invariant over a wide range of frequency. In addition, the extracted loss tangent, inductance and resistance are independent on gate voltage and frequency. The effect of series resistance on the frequency dispersion of the capacitance can be also explained by this model. These results indicate that this modified technique can be incorporated in the routine capacitance-voltage (C-V) measurement procedure providing the physically meaningful data for the high-k gate dielectrics     

Use of ESR for deterioration diagnosis of electrolytic capacitor

A new deterioration diagnosis method for the electrolytic capacitor is proposed for a forward-type converter and a buck-boost converter. It was observed that the ESR (equivalent series resistance) of the electrolytic capacitor increases as it deteriorates, and the knowledge that ripple varies proportionally to the ESR increase was used. With this method, the electrolytic capacitor life-cycle aging rate can be projected for the active circuit over the system life. This approach to deterioration is valid for any load condition, no matter whether the circuit has feedback control or not     

串联补偿电容器对线路保护的影响

串联补偿装电容器能有效降低线路所连接的两端点之间的电抗值,提高最大传输功率和系统运行的稳定性,并降低输电系统工程造价。文中就串联补偿电容器对线路保护装置的影响进行了研究,分析了问题产生的原因,找出了解决问题的方法,并提出了消除串联补偿装电容器影响的具体措施。     

Feed-Through Type Multilayer Capacitor for High Frequency Voltage Noise Suppression

A novel feed-through type multilayer ceramic capacitor (MLCC) is proposed using vertically oriented internal electrodes. The proposed capacitor has a distinctive structure to effectively reduce the parasitic equivalent series inductance (ESL), and thus the noise suppression performance of the capacitor can be greatly improved. Furthermore, it can be made compact with the help of relatively simple terminal structure. Therefore, the capacitor developed here is suitably used as a bypass capacitor in mobile communication systems where miniaturized components with high performance are essentially required. To demonstrate the feasibility and validity of the proposed capacitor, the size 1005 capacitors and evaluation boards have been designed and fabricated. According to the measured results, the proposed capacitor provides the insertion loss of 47.5 dB at 1.0 GHz, and thus the peak to peak voltage noise is reduced from 352 mV to 287 mV by using the proposed capacitor instead of using the regular two terminal MLCC.      

A simple electrical method to determine the Si and oxidethicknesses in SOI materials

It is shown that the thickness of the silicon and oxide layers of a silicon-on-insulator (SOI) structure can be determined from high-frequency capacitance-voltage measurements. The test device consists of a Schottky diode in series with a Si-oxide-Si capacitor. The Si film and the substrate are n-type. The operation of this device is explained for n-type Si with the help of the energy-band diagrams. It is demonstrated that this simple test device can be implemented as a process monitor for silicon thickness control     

A Novel Frequency Compensation Technique for Three-Stage Amplifier

Multistage amplifiers are urgently needed with the advance in technology, due to the fact that single-stage cascode amplifier is no longer suitable in low-voltage designs. Moreover, the short-channel effects of the sub-micro CMOS transistor cause output-impedance degradation and hence the gain of an amplifier is reduced dramatically[1~6]. For multistage amplifiers, most of the compensation methods are based on pole splitting and pushing the right-half-plane zero to high frequencies or pole-ze…     

求解电容电路的辛传递矩阵法

本文从一个简单电容电路出发,引入所带电量及端点电势构成的状态向量,将电容电路的计算导人了辛体系,以辛矩阵的形式给出了电容多级串联电路以及多支路复杂电容电路的辛传递矩阵解法.辛传递矩阵解法只涉及简单的矩阵计算,为电容电路提供了一个方便的计算方法.将辛数学的方法应用到了电路计算中,将有利于不同学科之间的相互交叉与渗透.     

Temperature rise measurement for power-loss comparison of an aluminum electrolytic capacitor between sinusoidal and square-wave current injections

DC-link capacitors are a major factor of degrading reliability of power electric converters because they usually have a shorter lifetime and higher failure rate than those of semiconductor devices or magnetic devices. Characteristics of the capacitors are usually evaluated by a single sinusoidal current waveform. However, actual current flowing out of the converter into the capacitor is a modulated square current waveform. This paper provides experimental comparison of the power loss dissipated in an aluminum electrolytic capacitor between sinusoidal and square-wave current injections. Power loss is estimated by temperature rise of the capacitor. Experimental results confirm that power losses of the square-wave current injection were always lower than those of the sinusoidal current injection by 10–20%. Moreover, the power losses of the square-wave current injection can be estimated by a synthesis of fundamental and harmonic currents based on the Fourier series expansion, which brings a high accuracy less than 1% when more than fifth harmonic current is introduced. This comparison will be useful for estimating power loss and life time of electrolytic capacitors.